JP5028800B2 - 高硬度導電性ダイヤモンド多結晶体およびその製造方法 - Google Patents
高硬度導電性ダイヤモンド多結晶体およびその製造方法 Download PDFInfo
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- 229910003460 diamond Inorganic materials 0.000 title claims description 123
- 239000010432 diamond Substances 0.000 title claims description 123
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000002245 particle Substances 0.000 claims description 51
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 50
- 229910052796 boron Inorganic materials 0.000 claims description 49
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 31
- 238000005245 sintering Methods 0.000 claims description 22
- 229910002804 graphite Inorganic materials 0.000 claims description 17
- 239000010439 graphite Substances 0.000 claims description 17
- 239000003575 carbonaceous material Substances 0.000 claims description 14
- 239000003054 catalyst Substances 0.000 claims description 10
- 238000002441 X-ray diffraction Methods 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 238000003754 machining Methods 0.000 description 20
- 230000003647 oxidation Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- 229910052799 carbon Inorganic materials 0.000 description 11
- 229910003481 amorphous carbon Inorganic materials 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 9
- 239000012071 phase Substances 0.000 description 9
- 239000007858 starting material Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 239000002775 capsule Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005087 graphitization Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000009770 conventional sintering Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- -1 iron group metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010299 mechanically pulverizing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005464 sample preparation method Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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Description
そして、このダイヤモンド多結晶体は従来の多結晶体に比べはるかに高硬度で高強度で耐熱性および耐酸化性にも優れ、同時に放電加工が可能であることを見いだした。
また、本発明による別の高硬度導電性ダイヤモンド多結晶体は、ホウ素を固溶体として含む非晶質炭素やグラファイト型炭素、ダイヤモンド粉末を出発物質として、超高圧高温下で焼結助剤や触媒の添加なしに、直接的にダイヤモンドに変換焼結、もしくは直接焼結された、実質的にダイヤモンドのみからなる多結晶体であって、ダイヤモンドの最大粒径が10000nm以下、平均粒径が5000nm以下で、ダイヤモンド粒子内にホウ素を1000ppm以上100000ppm以下含むことを特徴とする。ダイヤモンド粒子の粒径を上記範囲に制御することにより、硬度、強度の低下を防ぐことができる。また、ダイヤモンド粒子内のホウ素の濃度は、1000ppmより少ないと、変換焼結のために必要な圧力温度条件が7.5GPa、2000℃以上と高くなり、また、耐酸化性の向上が期待できない。また、100000ppmを超えると、ダイヤモンド焼結体中にB4Cなどの非ダイヤモンド相が析出し、焼結体の機械的性質が低下する。上記の構成により、硬度、強度、耐熱性、耐酸化性に優れ、同時に放電加工が可能なダイヤモンド焼結体を提供することができる。
Claims (8)
- 実質的にダイヤモンドのみからなる多結晶体であって、ダイヤモンドの最大粒径が100nm以下、平均粒径が50nm以下で、ダイヤモンド粒子内にホウ素を10ppm以上1000ppm以下含み、硬度が80GPa以上であり、前記ダイヤモンドの比抵抗が、10Ωcm以下である、高硬度導電性ダイヤモンド多結晶体。
- 前記ダイヤモンドの最大粒径が50nm以下で、平均粒径が30nm以下である請求項1に記載の高硬度導電性ダイヤモンド多結晶体。
- 硬度が110GPa以上である請求項1に記載の高硬度導電性ダイヤモンド多結晶体。
- 請求項1に記載の高硬度導電性ダイヤモンド多結晶体の製造方法であって、
ホウ素を含むグラファイトを不活性ガス中で、機械的に粉砕して、粒径が100nm以下の非晶質もしくは微細なホウ素を含むグラファイト型炭素物質を作製し、これを、温度1500℃以上で、ダイヤモンドが熱力学的に安定である圧力条件下で、焼結助剤や触媒の添加なしに直接的にダイヤモンドに変換させると同時に焼結させることを特徴とする高硬度導電性ダイヤモンド多結晶体の製造方法。 - 前記非晶質もしくは微細なホウ素を含むグラファイト型炭素物質の最大粒径が50nm以下である請求項4に記載の高硬度導電性ダイヤモンド多結晶体の製造方法。
- 前記非晶質もしくは微細なホウ素を含むグラファイト型炭素物質のX線回折図形の(002)回折線の半値幅より求められる結晶子サイズが50nm以下である請求項4に記載の高硬度導電性ダイヤモンド多結晶体の製造方法。
- 前記非晶質もしくは微細なホウ素を含むグラファイト型炭素物質のX線回折図形の(002)回折線の半値幅より求められる結晶子サイズが10nm以下である請求項4に記載の高硬度導電性ダイヤモンド多結晶体の製造方法。
- 前記非晶質もしくは微細なホウ素を含むグラファイト型炭素物質のX線回折図形に(002)回折線が認められない請求項4に記載の高硬度導電性ダイヤモンド多結晶体の製造方法。
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