JP5140606B2 - 伸線ダイス - Google Patents
伸線ダイス Download PDFInfo
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- JP5140606B2 JP5140606B2 JP2008554094A JP2008554094A JP5140606B2 JP 5140606 B2 JP5140606 B2 JP 5140606B2 JP 2008554094 A JP2008554094 A JP 2008554094A JP 2008554094 A JP2008554094 A JP 2008554094A JP 5140606 B2 JP5140606 B2 JP 5140606B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C3/00—Profiling tools for metal drawing; Combinations of dies and mandrels
- B21C3/02—Dies; Selection of material therefor; Cleaning thereof
- B21C3/025—Dies; Selection of material therefor; Cleaning thereof comprising diamond parts
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
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- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
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- B21C3/00—Profiling tools for metal drawing; Combinations of dies and mandrels
- B21C3/18—Making tools by operations not covered by a single other subclass; Repairing
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
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- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/061—Graphite
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/0625—Carbon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/0685—Crystal sintering
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- C—CHEMISTRY; METALLURGY
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
- C04B2235/425—Graphite
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
- C04B2235/427—Diamond
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/781—Nanograined materials, i.e. having grain sizes below 100 nm
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/782—Grain size distributions
- C04B2235/783—Bimodal, multi-modal or multi-fractional
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/785—Submicron sized grains, i.e. from 0,1 to 1 micron
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- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
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- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Physics & Mathematics (AREA)
- Metal Extraction Processes (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
2 ケース
Claims (9)
- 非ダイヤモンド型炭素物質を出発物質として、超高圧高温下で焼結助剤や触媒の添加なしに直接的にダイヤモンドに変換焼結された、実質的にダイヤモンドのみからなる多結晶ダイヤモンドをコアとした伸線ダイスであり、前記多結晶ダイヤモンドが、最大粒径が100nm以下、平均粒径が50nm以下の微粒のダイヤモンドと、最小粒径50nm以上、最大粒径10000nm以下の板状もしくは粒状の粗粒ダイヤモンドの混合組織を持ち、前記多結晶ダイヤモンドには伸線加工される線材を通過させる孔が設けられ、
前記多結晶ダイヤモンドに形成された孔のうち、少なくとも加工に作用する面の面あらさがRaで0.001μm以上0.2μm以下である伸線ダイス。 - 非ダイヤモンド型炭素物質を出発物質として、超高圧高温下で焼結助剤や触媒の添加なしに直接的にダイヤモンドに変換焼結された、実質的にダイヤモンドのみからなる多結晶ダイヤモンドをコアとした伸線ダイスであり、前記多結晶ダイヤモンドが、最大粒径が100nm以下、平均粒径が50nm以下の微粒のダイヤモンドと、最小粒径50nm以上、最大粒径10000nm以下の板状もしくは粒状の粗粒ダイヤモンドの混合組織を持ち、前記多結晶ダイヤモンドには伸線加工される線材を通過させる孔が設けられ、
前記多結晶ダイヤモンドに形成された孔のうち、ベアリング部の断面を見た時の前記孔の真円度が0.01μm以上0.2μm以下である伸線ダイス。 - 非ダイヤモンド型炭素物質を出発物質として、超高圧高温下で焼結助剤や触媒の添加なしに直接的にダイヤモンドに変換焼結された、実質的にダイヤモンドのみからなる多結晶ダイヤモンドをコアとした伸線ダイスであり、前記多結晶ダイヤモンドが、最大粒径が100nm以下、平均粒径が50nm以下の微粒のダイヤモンドと、最小粒径50nm以上、最大粒径10000nm以下の板状もしくは粒状の粗粒ダイヤモンドの混合組織を持ち
、前記多結晶ダイヤモンドには伸線加工される線材を通過させる孔が設けられ、
伸線加工される線材は金線であり、前記孔の形状のうちリダクション角度は8〜16°である伸線ダイス。 - 非ダイヤモンド型炭素物質を出発物質として、超高圧高温下で焼結助剤や触媒の添加なしに直接的にダイヤモンドに変換焼結された、実質的にダイヤモンドのみからなる多結晶ダイヤモンドをコアとした伸線ダイスであり、前記多結晶ダイヤモンドが、最大粒径が100nm以下、平均粒径が50nm以下の微粒のダイヤモンドと、最小粒径50nm以上、最大粒径10000nm以下の板状もしくは粒状の粗粒ダイヤモンドの混合組織を持ち、前記多結晶ダイヤモンドには伸線加工される線材を通過させる孔が設けられ、
伸線加工される線材は銅線であり、前記孔の形状のうちリダクション角度は8〜16°である伸線ダイス。 - 非ダイヤモンド型炭素物質を出発物質として、超高圧高温下で焼結助剤や触媒の添加なしに直接的にダイヤモンドに変換焼結された、実質的にダイヤモンドのみからなる多結晶ダイヤモンドをコアとした伸線ダイスであり、前記多結晶ダイヤモンドが、最大粒径が100nm以下、平均粒径が50nm以下の微粒のダイヤモンドと、最小粒径50nm以上、最大粒径10000nm以下の板状もしくは粒状の粗粒ダイヤモンドの混合組織を持ち、前記多結晶ダイヤモンドには伸線加工される線材を通過させる孔が設けられ、
伸線加工される線材はタングステン線であり、前記孔の形状のうちリダクション角度は6〜14°である伸線ダイス。 - 非ダイヤモンド型炭素物質を出発物質として、超高圧高温下で焼結助剤や触媒の添加なしに直接的にダイヤモンドに変換焼結された、実質的にダイヤモンドのみからなる多結晶ダイヤモンドをコアとした伸線ダイスであり、前記多結晶ダイヤモンドが、最大粒径が100nm以下、平均粒径が50nm以下の微粒のダイヤモンドと、最小粒径50nm以上、最大粒径10000nm以下の板状もしくは粒状の粗粒ダイヤモンドの混合組織を持ち、前記多結晶ダイヤモンドには伸線加工される線材を通過させる孔が設けられ、
伸線加工される線材はステンレス線であり、前記孔の形状のうちリダクション角度は6〜14°である伸線ダイス。 - 非ダイヤモンド型炭素物質を出発物質として、超高圧高温下で焼結助剤や触媒の添加なしに直接的にダイヤモンドに変換焼結された、実質的にダイヤモンドのみからなる多結晶ダイヤモンドをコアとした伸線ダイスであり、前記多結晶ダイヤモンドが、最大粒径が100nm以下、平均粒径が50nm以下の微粒のダイヤモンドと、最小粒径50nm以上、最大粒径10000nm以下の板状もしくは粒状の粗粒ダイヤモンドの混合組織を持ち、前記多結晶ダイヤモンドには伸線加工される線材を通過させる孔が設けられ、
伸線加工される線材はスチールコードであり、前記孔の形状のうちリダクション角度は6〜14°である伸線ダイス。 - 前記微粒のダイヤモンドの最大粒径が50nm以下で、平均粒径が30nm以下である請求項1から7のいずれか1項に記載の伸線ダイス。
- 前記粗粒のダイヤモンドの最小粒径が50nm以上、最大粒径が1000nm以下である請求項1から8のいずれか1項に記載の伸線ダイス。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008554094A JP5140606B2 (ja) | 2007-01-19 | 2008-01-18 | 伸線ダイス |
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JP2007010101 | 2007-01-19 | ||
JP2007010101 | 2007-01-19 | ||
PCT/JP2008/050621 WO2008088048A1 (ja) | 2007-01-19 | 2008-01-18 | 伸線ダイス |
JP2008554094A JP5140606B2 (ja) | 2007-01-19 | 2008-01-18 | 伸線ダイス |
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JPWO2008088048A1 JPWO2008088048A1 (ja) | 2010-05-13 |
JP5140606B2 true JP5140606B2 (ja) | 2013-02-06 |
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US (1) | US9061336B2 (ja) |
EP (2) | EP2127769B1 (ja) |
JP (1) | JP5140606B2 (ja) |
KR (1) | KR101273137B1 (ja) |
CN (1) | CN101588877B (ja) |
ES (2) | ES2628317T3 (ja) |
WO (1) | WO2008088048A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5096307B2 (ja) * | 2008-12-25 | 2012-12-12 | 住友電気工業株式会社 | 伸線ダイス |
JP5042275B2 (ja) * | 2009-05-27 | 2012-10-03 | 株式会社アライドマテリアル | ダイヤモンドダイス |
EP2490274B1 (en) * | 2011-02-18 | 2014-05-07 | Bruker BioSpin AG | Device and method for the densification of filaments in a long superconductive wire |
JP6313105B2 (ja) * | 2014-04-18 | 2018-04-18 | 株式会社ブリヂストン | 金属線材伸線加工用ダイスおよびその製造方法 |
KR101811761B1 (ko) * | 2014-10-11 | 2017-12-22 | 허난 페이머스 다이아몬드 인더스트리얼 씨오. 엘티디 | 거친 표면의 금강석의 합성방법 |
EP3369492B1 (en) * | 2015-10-30 | 2020-09-02 | Sumitomo Electric Industries, Ltd. | Wear-resistant tool |
DE112017005481T5 (de) * | 2016-10-31 | 2019-07-18 | Autonetworks Technologies, Ltd. | Aluminiumlegierungsdraht, Aluminiumlegierungs-Litzendraht, ummantelter elektrischer Draht und mit einer Anschlussklemme ausgestatteter elektrischer Draht |
CN110114156B (zh) * | 2016-12-26 | 2021-03-23 | 联合材料公司 | 异形金刚石模具 |
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CN101588877A (zh) | 2009-11-25 |
EP2127769B1 (en) | 2015-03-11 |
EP2647444A3 (en) | 2013-10-30 |
CN101588877B (zh) | 2012-05-16 |
ES2538810T3 (es) | 2015-06-24 |
ES2628317T3 (es) | 2017-08-02 |
JPWO2008088048A1 (ja) | 2010-05-13 |
KR101273137B1 (ko) | 2013-06-13 |
EP2647444B1 (en) | 2017-03-29 |
US9061336B2 (en) | 2015-06-23 |
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