JP6261000B2 - 制御された導電性/電気抵抗を有するダイヤモンド及びその製法 - Google Patents
制御された導電性/電気抵抗を有するダイヤモンド及びその製法 Download PDFInfo
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- JP6261000B2 JP6261000B2 JP2014095762A JP2014095762A JP6261000B2 JP 6261000 B2 JP6261000 B2 JP 6261000B2 JP 2014095762 A JP2014095762 A JP 2014095762A JP 2014095762 A JP2014095762 A JP 2014095762A JP 6261000 B2 JP6261000 B2 JP 6261000B2
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- 239000010432 diamond Substances 0.000 title claims description 89
- 229910003460 diamond Inorganic materials 0.000 title claims description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000002245 particle Substances 0.000 claims description 36
- 239000000843 powder Substances 0.000 claims description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 239000012298 atmosphere Substances 0.000 claims description 9
- 239000007800 oxidant agent Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 125000000524 functional group Chemical group 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims description 2
- 239000004323 potassium nitrate Substances 0.000 claims description 2
- 235000010333 potassium nitrate Nutrition 0.000 claims description 2
- 239000012286 potassium permanganate Substances 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 230000009466 transformation Effects 0.000 claims 1
- 239000006061 abrasive grain Substances 0.000 description 33
- 238000000576 coating method Methods 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004070 electrodeposition Methods 0.000 description 5
- 238000005087 graphitization Methods 0.000 description 5
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Description
Claims (9)
- 一定の粒度分布を有する導電性のダイヤモンド粉体であって、該粉体を構成するダイヤモンド粒子が、粒子表面の部分的な変換によって形成された、ダイヤモンド表面に存在する非ダイヤモンド相に基づいて制御された電気抵抗を有し、かつ上記非ダイヤモンド相が、質量比においてダイヤモンド粒子の0.5%未満である導電性ダイヤモンド。
- 前記ダイヤモンド粉体の電気抵抗が10MPaの加圧下の測定による比抵抗において最低10-3Ω・mのオーダー、最高107Ω・mのオーダーである、請求項1に記載の導電性ダイヤモンド。
- 前記電気抵抗が比抵抗において最低0.1Ω・mのオーダー、最高106Ω・mのオーダーである、請求項1に記載の導電性ダイヤモンド。
- 前記粒度分布のD50平均粒径が5μm以上である、請求項1に記載の導電性ダイヤモンド。
- 前記基体ダイヤモンドが高圧法により合成されたダイヤモンド粒子である、請求項1に記載のダイヤモンド。
- ダイヤモンド粉体を第一の酸化剤中において加熱することにより、粉体構成粒子の表面に酸素含有官能基を形成させる表面酸化工程、及び
表面が酸化されたダイヤモンド粒子を非酸化性雰囲気中で1000℃以上1500℃以下の加熱温度に制御された保持時間供することにより、該ダイヤモンド粒子の表層部を非ダイヤモンド炭素に変換し、この相変換により10MPaの加圧下の測定による比抵抗において最低10-3Ω・mのオーダー、最高107Ω・mのオーダーの導電性を付与する工程
を含む、請求項1に記載の導電性ダイヤモンドの製造方法。 - 前記表面酸化工程において第一の酸化剤が、過塩素酸または濃硫酸を基材として含有し、かつ150℃以上の温度に加熱される、請求項6に記載の導電性ダイヤモンドの製造方法。
- 前記第一の酸化剤に、第二の酸化剤として濃硝酸、硝酸カリ、過マンガン酸カリ及びクロム酸から選ばれる少なくとも1種を添加して行う、請求項6に記載の導電性ダイヤモンドの製造方法。
- 前記ダイヤモンド粉体が、5μm以上のD50平均粒径をもつ整粒されたダイヤモンド粉体である、請求項6に記載の導電性ダイヤモンドの製造方法。
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JP6261000B2 true JP6261000B2 (ja) | 2018-01-17 |
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CN115011917B (zh) * | 2022-05-18 | 2023-06-06 | 湖南工业职业技术学院 | 一种基于真空热蒸镀的金刚石颗粒表面改性方法 |
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JP3411239B2 (ja) * | 1998-08-28 | 2003-05-26 | 石塚 博 | ダイヤモンド研磨材粒子及びその製法 |
JP3820080B2 (ja) * | 2000-05-22 | 2006-09-13 | 石塚 博 | 微細ダイヤモンド研磨材粒子及びその製法 |
JP2002060733A (ja) * | 2000-08-17 | 2002-02-26 | Ishizuka Kenkyusho:Kk | ダイヤモンド研磨材粒子及びその製法 |
WO2005065809A1 (ja) * | 2003-12-11 | 2005-07-21 | Sumitomo Electric Industries, Ltd. | 高硬度導電性ダイヤモンド多結晶体およびその製造方法 |
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