JPWO2005065809A1 - 高硬度導電性ダイヤモンド多結晶体およびその製造方法 - Google Patents
高硬度導電性ダイヤモンド多結晶体およびその製造方法 Download PDFInfo
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Abstract
Description
そして、このダイヤモンド多結晶体は従来の多結晶体に比べはるかに高硬度で高強度で耐熱性および耐酸化性にも優れ、同時に放電加工が可能であることを見いだした。
また、本発明による別の高硬度導電性ダイヤモンド多結晶体は、ホウ素を固溶体として含む非晶質炭素やグラファイト型炭素、ダイヤモンド粉末を出発物質として、超高圧高温下で焼結助剤や触媒の添加なしに、直接的にダイヤモンドに変換焼結、もしくは直接焼結された、実質的にダイヤモンドのみからなる多結晶体であって、ダイヤモンドの最大粒径が10000nm以下、平均粒径が5000nm以下で、ダイヤモンド粒子内にホウ素を1000ppm以上100000ppm以下含むことを特徴とする。ダイヤモンド粒子の粒径を上記範囲に制御することにより、硬度、強度の低下を防ぐことができる。また、ダイヤモンド粒子内のホウ素の濃度は、1000ppmより少ないと、変換焼結のために必要な圧力温度条件が7.5GPa、2000℃以上と高くなり、また、耐酸化性の向上が期待できない。また、100000ppmを超えると、ダイヤモンド焼結体中にB4Cなどの非ダイヤモンド相が析出し、焼結体の機械的性質が低下する。上記の構成により、硬度、強度、耐熱性、耐酸化性に優れ、同時に放電加工が可能なダイヤモンド焼結体を提供することができる。
Claims (21)
- 実質的にダイヤモンドのみからなる多結晶体であって、ダイヤモンドの最大粒径が100nm以下、平均粒径が50nm以下で、ダイヤモンド粒子内にホウ素を10ppm以上1000ppm以下含むことを特徴とする、高硬度導電性ダイヤモンド多結晶体。
- 前記ダイヤモンドの比抵抗が、10Ωcm以下である請求項1に記載の高硬度導電性ダイヤモンド多結晶体。
- 前記ダイヤモンドの最大粒径が50nm以下で、平均粒径が30nm以下である請求項1または請求項2のいずれかに記載の高硬度導電性ダイヤモンド多結晶体。
- 硬度が80GPa以上である請求項1または請求項2のいずれかに記載の高硬度導電性ダイヤモンド多結晶体。
- 硬度が110GPa以上である請求項4に記載の高硬度導電性ダイヤモンド多結晶体。
- ホウ素を含むグラファイトを不活性ガス中で、遊星ボールミル等で機械的に粉砕して非晶質もしくは微細なホウ素を含むグラファイト型炭素物質を作製し、これを、温度1500℃以上で、ダイヤモンドが熱力学的に安定である圧力条件下で、焼結助剤や触媒の添加なしに直接的にダイヤモンドに変換させると同時に焼結させることを特徴とする高硬度導電性ダイヤモンド多結晶体の製造方法。
- 前記非晶質もしくは微細なホウ素を含むグラファイト型炭素物質の最大粒径が100nm以下である請求項6に記載の高硬度導電性ダイヤモンド多結晶体の製造方法。
- 前記非晶質もしくは微細なホウ素を含むグラファイト型炭素物質の最大粒径が50nm以下である請求項6に記載の高硬度導電性ダイヤモンド多結晶体の製造方法。
- 前記非晶質もしくは微細なホウ素を含むグラファイト型炭素物質のX線回折図形の(002)回折線の半値幅より求められる結晶子サイズが50nm以下である請求項6に記載の高硬度ダイヤモンド多結晶体の製造方法。
- 前記非晶質もしくは微細なホウ素を含むグラファイト型炭素物質のX線回折図形の(002)回折線の半値幅より求められる結晶子サイズが10nm以下である請求項6に記載の高硬度ダイヤモンド多結晶体の製造方法。
- 前記非晶質もしくは微細なホウ素を含むグラファイト型炭素物質のX線回折図形に(002)回折線が認められない請求項6に記載の高硬度ダイヤモンド多結晶体の製造方法。
- 実質的にダイヤモンドのみからなる多結晶体であって、ダイヤモンドの最大粒径が10000nm以下、平均粒径が5000nm以下で、ダイヤモンド粒子内にホウ素を1000ppm以上100000ppm以下含むことを特徴とする、高硬度導電性ダイヤモンド多結晶体。
- 前記ダイヤモンドの比抵抗が、1Ωcm以下である請求項12に記載の高硬度導電性ダイヤモンド多結晶体。
- 前記ダイヤモンドの最大粒径が1000nm以下で、平均粒径が500nm以下である請求項12または請求項13のいずれかに記載の高硬度導電性ダイヤモンド多結晶体。
- 硬度が80GPa以上である請求項12または請求項13のいずれかに記載の高硬度導電性ダイヤモンド多結晶体。
- 硬度が110GPa以上である請求項15に記載の高しゅう硬度導電性ダイヤモンド多結晶体。
- ホウ素を10ppm以上100000ppm以下含む炭素物質を、ダイヤモンドが熱力学的に安定である圧力条件下で、焼結助剤や触媒の添加なしに直接的にダイヤモンドに変換させると同時に焼結させることを特徴とする高硬度導電性ダイヤモンド多結晶体の製造方法。
- 前記ホウ素を含む炭素物質が、非晶質炭素であることを特徴とする請求項12に記載の高硬度ダイヤモンド多結晶体の製造方法。
- 前記ホウ素を含む炭素物質が、グラファイト型炭素であることを特徴とする請求項12に記載の高硬度ダイヤモンド多結晶体の製造方法。
- 前記ホウ素を含む炭素物質が、グラファイト型炭素と炭化ホウ素からなることを特徴とする請求項12に記載の高硬度ダイヤモンド多結晶体の製造方法。
- 前記ホウ素を含む炭素物質が、ダイヤモンド状炭素であり、焼結助剤や触媒の添加なしに焼結させることを特徴とする高硬度導電性ダイヤモンド多結晶体の製造方法。
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