JP5016351B2 - 基板処理システム及び基板洗浄装置 - Google Patents
基板処理システム及び基板洗浄装置 Download PDFInfo
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- JP5016351B2 JP5016351B2 JP2007089803A JP2007089803A JP5016351B2 JP 5016351 B2 JP5016351 B2 JP 5016351B2 JP 2007089803 A JP2007089803 A JP 2007089803A JP 2007089803 A JP2007089803 A JP 2007089803A JP 5016351 B2 JP5016351 B2 JP 5016351B2
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- 238000004140 cleaning Methods 0.000 title claims description 79
- 238000000034 method Methods 0.000 claims description 87
- 230000008569 process Effects 0.000 claims description 80
- 230000002093 peripheral effect Effects 0.000 claims description 61
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 48
- 239000000126 substance Substances 0.000 claims description 44
- 239000012071 phase Substances 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 14
- 239000011538 cleaning material Substances 0.000 claims description 11
- 239000007791 liquid phase Substances 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 239000003960 organic solvent Substances 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 141
- 239000012459 cleaning agent Substances 0.000 description 100
- 239000007789 gas Substances 0.000 description 62
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 229910001873 dinitrogen Inorganic materials 0.000 description 24
- 239000002245 particle Substances 0.000 description 16
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 15
- 229920000642 polymer Polymers 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000001747 exhibiting effect Effects 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000005411 Van der Waals force Methods 0.000 description 6
- 238000007654 immersion Methods 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- -1 for example Inorganic materials 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
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- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Description
PL,PS 異物
10 基板処理システム
12,15 プロセスモジュール
38,65 チャンバ
39,62 ステージ
40,61 シャワーヘッド
43,69 洗浄剤噴出穴
44,58 洗浄剤振動付与装置
47,76 パルスジェネレータ
51,75 境界層
53 高温窒素ガス
54 純水
54a 純水粒
55,57,66 アーム
63 クラスタ化した水分子
63a 水分子
67 洗浄剤噴出ノズル
70 吸気穴
74 洗浄剤
Claims (11)
- 載置台から突出した支持部材に支持された基板に所定の処理を施す基板処理装置と、少なくとも前記所定の処理の前後のいずれかにおいて前記基板を洗浄する基板洗浄装置とを備える基板処理システムであって、
前記基板洗浄装置は、
気相及び液相の2つの相状態を呈する洗浄物質と、高温ガスとを、前記基板の下方から前記基板の裏面及び周縁部に向けて噴出する噴出装置と、
前記基板の上方から前記基板の表面に向けて他のガスを噴出する他の噴出装置と、を有し、
前記噴出装置からの前記洗浄物質及び前記高温ガスの噴出と前記他の噴出装置からの前記他のガスの噴出とが同時に行われ、前記他のガスの噴出流量が前記洗浄物質及び前記高温ガスの噴出流量よりも多いことを特徴とする基板処理システム。 - 前記噴出装置は、前記洗浄物質及び前記高温ガスを、前記基板の裏面に対して斜めに噴出することを特徴とする請求項1記載の基板処理システム。
- 前記噴出装置及び前記基板は互いに平行且つ相対的に移動することを特徴とする請求項1又は2記載の基板処理システム。
- 前記噴出装置は、前記基板の裏面に向けて開口する吸気部を有することを特徴とする請求項1乃至3のいずれか1項に記載の基板処理システム。
- 前記基板洗浄装置は、前記洗浄物質及び前記高温ガスに振動を付与する他の振動付与装置を有することを特徴とする請求項1乃至4のいずれか1項記載の基板処理システム。
- 前記基板洗浄装置は、前記洗浄物質及び前記高温ガスの流速をパルス波的に変動させる流速変動装置を有することを特徴とする請求項1乃至5のいずれか1項記載の基板処理システム。
- 前記洗浄物質は、水、有機溶剤、界面活性剤及び洗浄溶液からなる群から選択された1つであることを特徴とする請求項1乃至6のいずれか1項記載の基板処理システム。
- 前記所定の処理はエッチング処理であることを特徴とする請求項1乃至7のいずれか1項記載の基板処理システム。
- 前記所定の処理はフォトレジストの露光処理又はコータデベロッパ処理であることを特徴とする請求項1乃至7のいずれか1項記載の基板処理システム。
- 前記高温ガスの温度は80℃〜150℃であることを特徴とする請求項1乃至9のいずれか1項に記載の基板処理システム。
- 気相と液相の2つの相状態を呈する洗浄物質と、高温ガスとを、載置台から突出した支持部材に支持された基板の下方から前記基板の裏面及び周縁部に向けて噴出する噴出装置と、
前記基板の上方から前記基板の表面に向けて他のガスを噴出する他の噴出装置と、を備え、
前記噴出装置からの前記洗浄物質及び前記高温ガスの噴出と前記他の噴出装置からの前記他のガスの噴出とが同時に行われ、前記他のガスの噴出流量が前記洗浄物質及び前記高温ガスの噴出流量よりも多いことを特徴とする基板洗浄装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007089803A JP5016351B2 (ja) | 2007-03-29 | 2007-03-29 | 基板処理システム及び基板洗浄装置 |
KR1020080028259A KR101011528B1 (ko) | 2007-03-29 | 2008-03-27 | 기판 처리 시스템 및 기판 세정 장치 |
US12/057,807 US8132580B2 (en) | 2007-03-29 | 2008-03-28 | Substrate processing system and substrate cleaning apparatus including a jetting apparatus |
TW097111199A TWI445063B (zh) | 2007-03-29 | 2008-03-28 | Substrate processing system and substrate cleaning device |
CN2008100869187A CN101276739B (zh) | 2007-03-29 | 2008-03-28 | 基板处理系统和基板清洗装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007089803A JP5016351B2 (ja) | 2007-03-29 | 2007-03-29 | 基板処理システム及び基板洗浄装置 |
Publications (2)
Publication Number | Publication Date |
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JP2008251743A JP2008251743A (ja) | 2008-10-16 |
JP5016351B2 true JP5016351B2 (ja) | 2012-09-05 |
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JP2007089803A Active JP5016351B2 (ja) | 2007-03-29 | 2007-03-29 | 基板処理システム及び基板洗浄装置 |
Country Status (5)
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US (1) | US8132580B2 (ja) |
JP (1) | JP5016351B2 (ja) |
KR (1) | KR101011528B1 (ja) |
CN (1) | CN101276739B (ja) |
TW (1) | TWI445063B (ja) |
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JP2010147262A (ja) * | 2008-12-19 | 2010-07-01 | Tokyo Electron Ltd | 洗浄装置、基板処理システム、洗浄方法、プログラム及びコンピュータ記憶媒体 |
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-
2007
- 2007-03-29 JP JP2007089803A patent/JP5016351B2/ja active Active
-
2008
- 2008-03-27 KR KR1020080028259A patent/KR101011528B1/ko active IP Right Grant
- 2008-03-28 TW TW097111199A patent/TWI445063B/zh active
- 2008-03-28 CN CN2008100869187A patent/CN101276739B/zh not_active Expired - Fee Related
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JP2008251743A (ja) | 2008-10-16 |
CN101276739A (zh) | 2008-10-01 |
KR20080088452A (ko) | 2008-10-02 |
TWI445063B (zh) | 2014-07-11 |
KR101011528B1 (ko) | 2011-01-27 |
US20080236634A1 (en) | 2008-10-02 |
TW200905736A (en) | 2009-02-01 |
US8132580B2 (en) | 2012-03-13 |
CN101276739B (zh) | 2013-01-02 |
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