JP5009649B2 - マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法 - Google Patents

マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法 Download PDF

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JP5009649B2
JP5009649B2 JP2007049084A JP2007049084A JP5009649B2 JP 5009649 B2 JP5009649 B2 JP 5009649B2 JP 2007049084 A JP2007049084 A JP 2007049084A JP 2007049084 A JP2007049084 A JP 2007049084A JP 5009649 B2 JP5009649 B2 JP 5009649B2
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Prior art keywords
film
pattern
thin film
mask
mask blank
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JP2007049084A
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Japanese (ja)
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JP2008209873A (ja
JP2008209873A5 (enExample
Inventor
順 野澤
光浩 暮石
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Hoya Corp
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Hoya Corp
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Priority to JP2007049084A priority Critical patent/JP5009649B2/ja
Priority to TW097106579A priority patent/TWI437362B/zh
Priority to KR1020080018158A priority patent/KR101575759B1/ko
Priority to US12/038,826 priority patent/US7838180B2/en
Publication of JP2008209873A publication Critical patent/JP2008209873A/ja
Publication of JP2008209873A5 publication Critical patent/JP2008209873A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007049084A 2007-02-28 2007-02-28 マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法 Active JP5009649B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007049084A JP5009649B2 (ja) 2007-02-28 2007-02-28 マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法
TW097106579A TWI437362B (zh) 2007-02-28 2008-02-26 遮罩基底、製造曝光遮罩的方法、製造反射式遮罩基底的方法及製造壓印模板的方法
KR1020080018158A KR101575759B1 (ko) 2007-02-28 2008-02-28 마스크 블랭크, 노광 마스크 제조방법 및 임프린트템플레이트 제조방법
US12/038,826 US7838180B2 (en) 2007-02-28 2008-02-28 Mask blank, method of manufacturing an exposure mask, and method of manufacturing an imprint template

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007049084A JP5009649B2 (ja) 2007-02-28 2007-02-28 マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法

Publications (3)

Publication Number Publication Date
JP2008209873A JP2008209873A (ja) 2008-09-11
JP2008209873A5 JP2008209873A5 (enExample) 2010-07-08
JP5009649B2 true JP5009649B2 (ja) 2012-08-22

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JP2007049084A Active JP5009649B2 (ja) 2007-02-28 2007-02-28 マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法

Country Status (4)

Country Link
US (1) US7838180B2 (enExample)
JP (1) JP5009649B2 (enExample)
KR (1) KR101575759B1 (enExample)
TW (1) TWI437362B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11187972B2 (en) 2016-10-21 2021-11-30 Hoya Corporation Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5161017B2 (ja) * 2007-09-27 2013-03-13 Ｈｏｙａ株式会社 マスクブランク、マスクブランクの製造方法、及びインプリント用モールドの製造方法
NL1036305A1 (nl) 2007-12-21 2009-06-23 Asml Netherlands Bv Grating for EUV-radiation, method for manufacturing the grating and wavefront measurement system.
JP2011096686A (ja) * 2009-09-30 2011-05-12 Hoya Corp インプリント用モールドの製造方法、残存ハードマスク層除去前モールドおよびその製造方法、ならびにマスクブランクス
EP2508492A4 (en) * 2009-12-04 2014-07-30 Asahi Glass Co Ltd METHOD FOR PRODUCING A SILICONE-BASED GLASS SUBSTRATE FOR A MOLDING FORM AND METHOD FOR PRODUCING THE MOLDING SHAPE
JP5599213B2 (ja) * 2010-03-30 2014-10-01 Ｈｏｙａ株式会社 モールドの製造方法
JP5123349B2 (ja) * 2010-04-19 2013-01-23 Ｈｏｙａ株式会社 多階調マスクの製造方法
JP5504054B2 (ja) * 2010-05-27 2014-05-28 株式会社東芝 インプリントマスク、その製造方法、及び半導体装置の製造方法
JP5627990B2 (ja) * 2010-10-25 2014-11-19 Hoya株式会社 インプリント用モールドの製造方法
JP2013058523A (ja) * 2011-09-07 2013-03-28 Toshiba Corp 半導体装置の製造方法
US9623590B2 (en) * 2012-01-27 2017-04-18 Asahi Kasei E-Materials Corporation Fine concavo-convex structure product, heat-reactive resist material for dry etching, mold manufacturing method and mold
JP6389375B2 (ja) * 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法
JP5821909B2 (ja) * 2013-07-30 2015-11-24 大日本印刷株式会社 光インプリント用モールドおよびその製造方法
US9726972B2 (en) * 2013-09-10 2017-08-08 Hoya Corporation Mask blank, transfer mask, and method for manufacturing transfer mask
JP5626613B2 (ja) * 2013-12-12 2014-11-19 Hoya株式会社 インプリントモールド用マスクブランク
JP2015146412A (ja) * 2014-02-04 2015-08-13 株式会社東芝 インプリント用テンプレート及びその製造方法
KR101504557B1 (ko) * 2014-03-23 2015-03-20 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크
JP6440996B2 (ja) * 2014-08-22 2018-12-19 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
US9984858B2 (en) * 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
KR102553992B1 (ko) * 2017-03-31 2023-07-10 가부시키가이샤 토판 포토마스크 위상 시프트 마스크 블랭크, 위상 시프트 마스크 및 위상 시프트 마스크의 제조 방법
CN109991819B (zh) * 2018-01-03 2021-08-03 群创光电股份有限公司 曝光系统及其用于制造显示面板的方法
JP7494104B2 (ja) * 2020-12-24 2024-06-03 キオクシア株式会社 パターン形成方法およびテンプレートの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4686006B2 (ja) * 2000-04-27 2011-05-18 大日本印刷株式会社 ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法
JP3818171B2 (ja) * 2002-02-22 2006-09-06 Ｈｏｙａ株式会社 位相シフトマスクブランク及びその製造方法
JP2002258458A (ja) * 2000-12-26 2002-09-11 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
JP3806702B2 (ja) * 2002-04-11 2006-08-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
US6852454B2 (en) 2002-06-18 2005-02-08 Freescale Semiconductor, Inc. Multi-tiered lithographic template and method of formation and use
JP2006507547A (ja) * 2002-11-25 2006-03-02 トッパン、フォウタマスクス、インク フォトマスク及びその上に保護層を生成する方法
JP4693395B2 (ja) * 2004-02-19 2011-06-01 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP2006048033A (ja) * 2004-07-09 2006-02-16 Hoya Corp フォトマスクブランク及びフォトマスクの製造方法、並びに半導体装置の製造方法
JP2006078825A (ja) 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
US7676088B2 (en) * 2004-12-23 2010-03-09 Asml Netherlands B.V. Imprint lithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11187972B2 (en) 2016-10-21 2021-11-30 Hoya Corporation Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
TWI437362B (zh) 2014-05-11
JP2008209873A (ja) 2008-09-11
TW200844651A (en) 2008-11-16
KR101575759B1 (ko) 2015-12-08
KR20080080047A (ko) 2008-09-02
US7838180B2 (en) 2010-11-23
US20080206655A1 (en) 2008-08-28

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