KR101575759B1 - 마스크 블랭크, 노광 마스크 제조방법 및 임프린트템플레이트 제조방법 - Google Patents

마스크 블랭크, 노광 마스크 제조방법 및 임프린트템플레이트 제조방법 Download PDF

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KR101575759B1
KR101575759B1 KR1020080018158A KR20080018158A KR101575759B1 KR 101575759 B1 KR101575759 B1 KR 101575759B1 KR 1020080018158 A KR1020080018158 A KR 1020080018158A KR 20080018158 A KR20080018158 A KR 20080018158A KR 101575759 B1 KR101575759 B1 KR 101575759B1
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film
thin film
pattern
mask
etching
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KR20080080047A (ko
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오사무 노자와
미츠히로 쿠레이시
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020080018158A 2007-02-28 2008-02-28 마스크 블랭크, 노광 마스크 제조방법 및 임프린트템플레이트 제조방법 Active KR101575759B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007049084A JP5009649B2 (ja) 2007-02-28 2007-02-28 マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法
JPJP-P-2007-00049084 2007-02-28

Publications (2)

Publication Number Publication Date
KR20080080047A KR20080080047A (ko) 2008-09-02
KR101575759B1 true KR101575759B1 (ko) 2015-12-08

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Country Link
US (1) US7838180B2 (enExample)
JP (1) JP5009649B2 (enExample)
KR (1) KR101575759B1 (enExample)
TW (1) TWI437362B (enExample)

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JP5161017B2 (ja) * 2007-09-27 2013-03-13 Ｈｏｙａ株式会社 マスクブランク、マスクブランクの製造方法、及びインプリント用モールドの製造方法
NL1036305A1 (nl) 2007-12-21 2009-06-23 Asml Netherlands Bv Grating for EUV-radiation, method for manufacturing the grating and wavefront measurement system.
JP2011096686A (ja) * 2009-09-30 2011-05-12 Hoya Corp インプリント用モールドの製造方法、残存ハードマスク層除去前モールドおよびその製造方法、ならびにマスクブランクス
KR20120104970A (ko) * 2009-12-04 2012-09-24 아사히 가라스 가부시키가이샤 임프린트 몰드용 석영계 유리 기재의 제조 방법 및 임프린트 몰드의 제조 방법
JP5599213B2 (ja) * 2010-03-30 2014-10-01 Ｈｏｙａ株式会社 モールドの製造方法
JP5123349B2 (ja) * 2010-04-19 2013-01-23 Ｈｏｙａ株式会社 多階調マスクの製造方法
JP5504054B2 (ja) 2010-05-27 2014-05-28 株式会社東芝 インプリントマスク、その製造方法、及び半導体装置の製造方法
JP5627990B2 (ja) * 2010-10-25 2014-11-19 Hoya株式会社 インプリント用モールドの製造方法
JP2013058523A (ja) * 2011-09-07 2013-03-28 Toshiba Corp 半導体装置の製造方法
US9623590B2 (en) * 2012-01-27 2017-04-18 Asahi Kasei E-Materials Corporation Fine concavo-convex structure product, heat-reactive resist material for dry etching, mold manufacturing method and mold
JP6389375B2 (ja) 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法
JP5821909B2 (ja) * 2013-07-30 2015-11-24 大日本印刷株式会社 光インプリント用モールドおよびその製造方法
WO2015037392A1 (ja) * 2013-09-10 2015-03-19 Hoya株式会社 マスクブランク、転写用マスクおよび転写用マスクの製造方法
JP5626613B2 (ja) * 2013-12-12 2014-11-19 Hoya株式会社 インプリントモールド用マスクブランク
JP2015146412A (ja) * 2014-02-04 2015-08-13 株式会社東芝 インプリント用テンプレート及びその製造方法
KR101504557B1 (ko) * 2014-03-23 2015-03-20 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크
JP6440996B2 (ja) * 2014-08-22 2018-12-19 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
US9984858B2 (en) * 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
WO2018074512A1 (ja) 2016-10-21 2018-04-26 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
SG11201907839RA (en) * 2017-03-31 2019-10-30 Toppan Printing Co Ltd Phase shift mask blank, phase shift mask and manufacturing method for phase shift mask
CN109991819B (zh) * 2018-01-03 2021-08-03 群创光电股份有限公司 曝光系统及其用于制造显示面板的方法
JP7494104B2 (ja) * 2020-12-24 2024-06-03 キオクシア株式会社 パターン形成方法およびテンプレートの製造方法

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JP2005268750A (ja) * 2004-02-19 2005-09-29 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP2006048033A (ja) * 2004-07-09 2006-02-16 Hoya Corp フォトマスクブランク及びフォトマスクの製造方法、並びに半導体装置の製造方法
JP2006078825A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法

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JP4686006B2 (ja) * 2000-04-27 2011-05-18 大日本印刷株式会社 ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法
JP3818171B2 (ja) * 2002-02-22 2006-09-06 Ｈｏｙａ株式会社 位相シフトマスクブランク及びその製造方法
JP2002258458A (ja) * 2000-12-26 2002-09-11 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
JP3806702B2 (ja) * 2002-04-11 2006-08-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
US6852454B2 (en) 2002-06-18 2005-02-08 Freescale Semiconductor, Inc. Multi-tiered lithographic template and method of formation and use
JP2006507547A (ja) * 2002-11-25 2006-03-02 トッパン、フォウタマスクス、インク フォトマスク及びその上に保護層を生成する方法
US7676088B2 (en) * 2004-12-23 2010-03-09 Asml Netherlands B.V. Imprint lithography

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JP2005268750A (ja) * 2004-02-19 2005-09-29 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP2006048033A (ja) * 2004-07-09 2006-02-16 Hoya Corp フォトマスクブランク及びフォトマスクの製造方法、並びに半導体装置の製造方法
JP2006078825A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法

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Publication number Publication date
US7838180B2 (en) 2010-11-23
US20080206655A1 (en) 2008-08-28
JP5009649B2 (ja) 2012-08-22
TWI437362B (zh) 2014-05-11
KR20080080047A (ko) 2008-09-02
TW200844651A (en) 2008-11-16
JP2008209873A (ja) 2008-09-11

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