JP4970723B2 - マルチステートドライブ回路による半導体スイッチのスイッチング方法及び装置 - Google Patents

マルチステートドライブ回路による半導体スイッチのスイッチング方法及び装置 Download PDF

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JP4970723B2
JP4970723B2 JP2004365877A JP2004365877A JP4970723B2 JP 4970723 B2 JP4970723 B2 JP 4970723B2 JP 2004365877 A JP2004365877 A JP 2004365877A JP 2004365877 A JP2004365877 A JP 2004365877A JP 4970723 B2 JP4970723 B2 JP 4970723B2
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semiconductor switch
state
voltage
drive
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JP2005184831A5 (enExample
JP2005184831A (ja
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ジアオ・ミン・ファム
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パワー・インテグレーションズ・インコーポレーテッド
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H03K17/164—Soft switching using parallel switching arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H03K17/167—Soft switching using parallel switching arrangements

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  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
JP2004365877A 2003-12-19 2004-12-17 マルチステートドライブ回路による半導体スイッチのスイッチング方法及び装置 Expired - Fee Related JP4970723B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/742,545 2003-12-19
US10/742,545 US7061301B2 (en) 2003-12-19 2003-12-19 Method and apparatus switching a semiconductor switch with a multi-state drive circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011265948A Division JP5466690B2 (ja) 2003-12-19 2011-12-05 マルチステートドライブ回路による半導体スイッチのスイッチング方法および回路

Publications (3)

Publication Number Publication Date
JP2005184831A JP2005184831A (ja) 2005-07-07
JP2005184831A5 JP2005184831A5 (enExample) 2008-02-07
JP4970723B2 true JP4970723B2 (ja) 2012-07-11

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JP2004365877A Expired - Fee Related JP4970723B2 (ja) 2003-12-19 2004-12-17 マルチステートドライブ回路による半導体スイッチのスイッチング方法及び装置
JP2011265948A Expired - Fee Related JP5466690B2 (ja) 2003-12-19 2011-12-05 マルチステートドライブ回路による半導体スイッチのスイッチング方法および回路

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JP2011265948A Expired - Fee Related JP5466690B2 (ja) 2003-12-19 2011-12-05 マルチステートドライブ回路による半導体スイッチのスイッチング方法および回路

Country Status (4)

Country Link
US (3) US7061301B2 (enExample)
EP (3) EP2256928B1 (enExample)
JP (2) JP4970723B2 (enExample)
DE (1) DE602004019491D1 (enExample)

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US9825625B2 (en) 2014-07-09 2017-11-21 CT-Concept Technologie GmbH Multi-stage gate turn-off with dynamic timing
US9473135B2 (en) * 2014-09-29 2016-10-18 Stmicroelectronics International N.V. Driver circuit including driver transistors with controlled body biasing
JP6617571B2 (ja) * 2016-01-14 2019-12-11 富士電機株式会社 半導体スイッチング素子のゲート駆動回路
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US10998843B2 (en) 2019-09-23 2021-05-04 Power Integrations, Inc. External adjustment of a drive control of a switch
US11437911B2 (en) 2020-12-22 2022-09-06 Power Integrations, Inc. Variable drive strength in response to a power converter operating condition
US20250158612A1 (en) * 2023-11-15 2025-05-15 Microchip Technology Incorporated Input buffering gate-to-source (vgs) voltage of a silicon carbide (sic) field-effect transistor (fet)

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Also Published As

Publication number Publication date
JP2012075176A (ja) 2012-04-12
EP2256928B1 (en) 2013-02-13
JP5466690B2 (ja) 2014-04-09
EP1545004B1 (en) 2009-02-18
EP2107652A3 (en) 2009-12-02
EP2107652A2 (en) 2009-10-07
EP2107652B1 (en) 2014-09-03
US20050134358A1 (en) 2005-06-23
JP2005184831A (ja) 2005-07-07
US8207760B2 (en) 2012-06-26
US20060261878A1 (en) 2006-11-23
US20120223746A1 (en) 2012-09-06
DE602004019491D1 (de) 2009-04-02
EP1545004A1 (en) 2005-06-22
EP2256928A1 (en) 2010-12-01
US8410829B2 (en) 2013-04-02
US7061301B2 (en) 2006-06-13

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