DE602004019491D1 - Halbleiterschalter mit Mehrzustand-Treiber - Google Patents
Halbleiterschalter mit Mehrzustand-TreiberInfo
- Publication number
- DE602004019491D1 DE602004019491D1 DE602004019491T DE602004019491T DE602004019491D1 DE 602004019491 D1 DE602004019491 D1 DE 602004019491D1 DE 602004019491 T DE602004019491 T DE 602004019491T DE 602004019491 T DE602004019491 T DE 602004019491T DE 602004019491 D1 DE602004019491 D1 DE 602004019491D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor switch
- state driver
- driver
- state
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
- H03K17/164—Soft switching using parallel switching arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
- H03K17/166—Soft switching
- H03K17/167—Soft switching using parallel switching arrangements
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/742,545 US7061301B2 (en) | 2003-12-19 | 2003-12-19 | Method and apparatus switching a semiconductor switch with a multi-state drive circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004019491D1 true DE602004019491D1 (de) | 2009-04-02 |
Family
ID=34523257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004019491T Active DE602004019491D1 (de) | 2003-12-19 | 2004-12-09 | Halbleiterschalter mit Mehrzustand-Treiber |
Country Status (4)
Country | Link |
---|---|
US (3) | US7061301B2 (de) |
EP (3) | EP2107652B1 (de) |
JP (2) | JP4970723B2 (de) |
DE (1) | DE602004019491D1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003168735A (ja) * | 2001-11-30 | 2003-06-13 | Hitachi Ltd | 半導体集積回路装置 |
US7061301B2 (en) * | 2003-12-19 | 2006-06-13 | Power Integrations, Inc. | Method and apparatus switching a semiconductor switch with a multi-state drive circuit |
TWI258261B (en) * | 2004-05-18 | 2006-07-11 | Richtek Techohnology Corp | JFET driving circuit applied to DC/DC converter and method thereof |
CN100495881C (zh) * | 2005-12-21 | 2009-06-03 | 昂宝电子(上海)有限公司 | 用于驱动双极晶体管的系统和用于控制电源变换器的系统 |
US7518885B2 (en) * | 2006-10-04 | 2009-04-14 | Power Integrations, Inc. | Method and apparatus for a control circuit with multiple operation modes |
US7576528B2 (en) * | 2006-10-04 | 2009-08-18 | Power Integrations, Inc. | Control circuit responsive to an impedance |
US7502236B2 (en) | 2006-10-04 | 2009-03-10 | Power Integrations, Inc. | Power supply controller responsive to a feedforward signal |
US7760524B2 (en) * | 2007-10-17 | 2010-07-20 | Power Integrations, Inc. | Method and apparatus to reduce the volume required for bulk capacitance in a power supply |
WO2010068197A1 (en) * | 2008-12-09 | 2010-06-17 | Hewlett-Packard Development Company, L.P. | Power circuit |
AU2010247781A1 (en) * | 2009-05-11 | 2011-11-24 | Power Integrations, Inc. | Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor JFETs |
US8441149B2 (en) * | 2010-06-25 | 2013-05-14 | Intel Corporation | Distributed power delivery scheme for on-die voltage scaling |
JP5397571B2 (ja) * | 2011-05-11 | 2014-01-22 | 富士電機株式会社 | 制御装置 |
JP5611118B2 (ja) * | 2011-05-16 | 2014-10-22 | 三菱電機株式会社 | 半導体集積回路 |
ES2608797T3 (es) * | 2012-05-18 | 2017-04-17 | Silergy Corp. | Circuito de conmutación suave |
DE102012104590A1 (de) * | 2012-05-29 | 2013-12-05 | Infineon Technologies Ag | Treiberschaltung |
CN104065251B (zh) * | 2013-03-18 | 2017-03-15 | 意法半导体研发(上海)有限公司 | 具有受控栅极放电电流的驱动器电路 |
US9397652B2 (en) * | 2013-12-03 | 2016-07-19 | Infineon Technologies Ag | Circuitry and method for operating such circuitry |
US9825625B2 (en) | 2014-07-09 | 2017-11-21 | CT-Concept Technologie GmbH | Multi-stage gate turn-off with dynamic timing |
US9473135B2 (en) * | 2014-09-29 | 2016-10-18 | Stmicroelectronics International N.V. | Driver circuit including driver transistors with controlled body biasing |
JP6617571B2 (ja) * | 2016-01-14 | 2019-12-11 | 富士電機株式会社 | 半導体スイッチング素子のゲート駆動回路 |
US9954461B1 (en) | 2017-06-12 | 2018-04-24 | Power Integrations, Inc. | Multiple stage gate drive for cascode current sensing |
US10998843B2 (en) | 2019-09-23 | 2021-05-04 | Power Integrations, Inc. | External adjustment of a drive control of a switch |
US11437911B2 (en) | 2020-12-22 | 2022-09-06 | Power Integrations, Inc. | Variable drive strength in response to a power converter operating condition |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01279631A (ja) * | 1988-05-02 | 1989-11-09 | Toshiba Corp | 半導体集積回路の出力回路 |
US5231311A (en) * | 1989-02-28 | 1993-07-27 | Vlsi Technology, Inc. | Digital output buffer and method with slew rate control and reduced crowbar current |
US5285116A (en) * | 1990-08-28 | 1994-02-08 | Mips Computer Systems, Inc. | Low-noise high-speed output buffer and method for controlling same |
EP0883248B1 (de) * | 1992-06-15 | 2006-08-09 | Fujitsu Limited | Integrierte Halbleiterschaltung mit Eingangs/Ausgangschnittstelle geeignet für niedrige Amplituden |
JP3123349B2 (ja) | 1994-06-29 | 2001-01-09 | 富士電機株式会社 | 半導体装置の制御回路 |
JP3577807B2 (ja) * | 1995-05-23 | 2004-10-20 | 富士電機デバイステクノロジー株式会社 | 自己消弧形半導体素子の駆動回路 |
JP3614519B2 (ja) * | 1995-07-25 | 2005-01-26 | 株式会社日立製作所 | 絶縁ゲート型半導体装置の駆動方法及び装置 |
JP3152867B2 (ja) | 1995-08-25 | 2001-04-03 | 株式会社東芝 | レベルシフト半導体装置 |
US5859552A (en) * | 1995-10-06 | 1999-01-12 | Lsi Logic Corporation | Programmable slew rate control circuit for output buffer |
JP3667447B2 (ja) * | 1996-06-20 | 2005-07-06 | 株式会社ルネサステクノロジ | 出力回路 |
JP3421507B2 (ja) * | 1996-07-05 | 2003-06-30 | 三菱電機株式会社 | 半導体素子の駆動回路 |
JPH10108477A (ja) * | 1996-09-30 | 1998-04-24 | Mitsutoyo Corp | インバータ回路 |
US5898321A (en) * | 1997-03-24 | 1999-04-27 | Intel Corporation | Method and apparatus for slew rate and impedance compensating buffer circuits |
DE19855604C5 (de) * | 1998-12-02 | 2004-04-15 | Siemens Ag | Verfahren und Vorrichtung zum Ansteuern einer Leistungsendstufe |
US6163178A (en) * | 1998-12-28 | 2000-12-19 | Rambus Incorporated | Impedance controlled output driver |
JP2000232347A (ja) * | 1999-02-08 | 2000-08-22 | Toshiba Corp | ゲート回路及びゲート回路制御方法 |
JP3666843B2 (ja) * | 1999-02-26 | 2005-06-29 | 株式会社東芝 | 絶縁ゲート型半導体素子のゲート回路 |
US6204700B1 (en) * | 1999-04-13 | 2001-03-20 | Delphi Technologies, Inc. | Predriver circuit for controlling a power drive circuit |
JP2001045742A (ja) * | 1999-07-29 | 2001-02-16 | Nissan Motor Co Ltd | パワーmos駆動回路 |
DE69915293T2 (de) * | 1999-10-22 | 2005-09-01 | Stmicroelectronics S.R.L., Agrate Brianza | Treiberschaltung für P-Kanal MOS-Schalter |
JP3888019B2 (ja) * | 2000-02-28 | 2007-02-28 | ヤマハ株式会社 | 出力バッファ回路 |
US6441673B1 (en) * | 2000-11-06 | 2002-08-27 | General Electric Company | High-frequency resonant gate driver circuit for MOS-gated power switches |
JP2002199758A (ja) * | 2000-12-28 | 2002-07-12 | Canon Inc | 振動型アクチュエータの制御装置 |
EP1221771A1 (de) * | 2001-01-08 | 2002-07-10 | STMicroelectronics S.r.l. | Hochkonfigurierbare Ausgangspufferschaltung |
DE10104590C1 (de) * | 2001-02-01 | 2002-08-08 | Infineon Technologies Ag | Akustisches Signalerzeugungsgerät und Verfahren zur Erzeugung eines akustischen Signals |
US6531895B1 (en) * | 2002-02-08 | 2003-03-11 | Delphi Technologies, Inc. | Isolated gate drive circuit having a switched input capacitor |
DE10217611B4 (de) * | 2002-04-19 | 2005-06-30 | Infineon Technologies Ag | Verfahren und Vorrichtung zur EMV-optimierten Ansteuerung eines Halbleiterschaltelements |
JP3678208B2 (ja) * | 2002-04-19 | 2005-08-03 | 株式会社デンソー | 負荷駆動用半導体装置 |
US7276954B2 (en) * | 2002-06-26 | 2007-10-02 | Kabushiki Kaisha Toyota Jidoshokki | Driver for switching device |
JP4023336B2 (ja) * | 2003-02-20 | 2007-12-19 | 株式会社日立製作所 | 半導体装置の駆動方法および装置 |
US6756826B1 (en) * | 2003-06-12 | 2004-06-29 | Fairchild Semiconductor Corporation | Method of reducing the propagation delay and process and temperature effects on a buffer |
US6809560B1 (en) * | 2003-07-11 | 2004-10-26 | Micrel, Inc. | Load sensing circuit for a power MOSFET switch |
JP2005045590A (ja) * | 2003-07-23 | 2005-02-17 | Mitsubishi Electric Corp | 半導体装置 |
US6836173B1 (en) * | 2003-09-24 | 2004-12-28 | System General Corp. | High-side transistor driver for power converters |
US7061301B2 (en) * | 2003-12-19 | 2006-06-13 | Power Integrations, Inc. | Method and apparatus switching a semiconductor switch with a multi-state drive circuit |
US7071740B2 (en) * | 2003-12-30 | 2006-07-04 | Texas Instruments Incorporated | Current limiting circuit for high-speed low-side driver outputs |
TWI258261B (en) * | 2004-05-18 | 2006-07-11 | Richtek Techohnology Corp | JFET driving circuit applied to DC/DC converter and method thereof |
-
2003
- 2003-12-19 US US10/742,545 patent/US7061301B2/en not_active Expired - Lifetime
-
2004
- 2004-12-09 EP EP09152724.2A patent/EP2107652B1/de not_active Expired - Fee Related
- 2004-12-09 EP EP04257648A patent/EP1545004B1/de not_active Expired - Fee Related
- 2004-12-09 DE DE602004019491T patent/DE602004019491D1/de active Active
- 2004-12-09 EP EP10176425A patent/EP2256928B1/de not_active Expired - Fee Related
- 2004-12-17 JP JP2004365877A patent/JP4970723B2/ja not_active Expired - Fee Related
-
2006
- 2006-05-12 US US11/433,256 patent/US8207760B2/en not_active Expired - Fee Related
-
2011
- 2011-12-05 JP JP2011265948A patent/JP5466690B2/ja not_active Expired - Fee Related
-
2012
- 2012-05-08 US US13/466,833 patent/US8410829B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP2256928B1 (de) | 2013-02-13 |
EP2107652B1 (de) | 2014-09-03 |
US20050134358A1 (en) | 2005-06-23 |
JP4970723B2 (ja) | 2012-07-11 |
JP2012075176A (ja) | 2012-04-12 |
US20120223746A1 (en) | 2012-09-06 |
EP2256928A1 (de) | 2010-12-01 |
EP1545004A1 (de) | 2005-06-22 |
EP2107652A3 (de) | 2009-12-02 |
US7061301B2 (en) | 2006-06-13 |
JP5466690B2 (ja) | 2014-04-09 |
US8207760B2 (en) | 2012-06-26 |
JP2005184831A (ja) | 2005-07-07 |
EP2107652A2 (de) | 2009-10-07 |
EP1545004B1 (de) | 2009-02-18 |
US20060261878A1 (en) | 2006-11-23 |
US8410829B2 (en) | 2013-04-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |