JP2005184831A5 - - Google Patents

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Publication number
JP2005184831A5
JP2005184831A5 JP2004365877A JP2004365877A JP2005184831A5 JP 2005184831 A5 JP2005184831 A5 JP 2005184831A5 JP 2004365877 A JP2004365877 A JP 2004365877A JP 2004365877 A JP2004365877 A JP 2004365877A JP 2005184831 A5 JP2005184831 A5 JP 2005184831A5
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JP
Japan
Prior art keywords
semiconductor switch
state
circuit
drive
time period
Prior art date
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JP2004365877A
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English (en)
Japanese (ja)
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JP4970723B2 (ja
JP2005184831A (ja
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Priority claimed from US10/742,545 external-priority patent/US7061301B2/en
Application filed filed Critical
Publication of JP2005184831A publication Critical patent/JP2005184831A/ja
Publication of JP2005184831A5 publication Critical patent/JP2005184831A5/ja
Application granted granted Critical
Publication of JP4970723B2 publication Critical patent/JP4970723B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004365877A 2003-12-19 2004-12-17 マルチステートドライブ回路による半導体スイッチのスイッチング方法及び装置 Expired - Fee Related JP4970723B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/742,545 2003-12-19
US10/742,545 US7061301B2 (en) 2003-12-19 2003-12-19 Method and apparatus switching a semiconductor switch with a multi-state drive circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011265948A Division JP5466690B2 (ja) 2003-12-19 2011-12-05 マルチステートドライブ回路による半導体スイッチのスイッチング方法および回路

Publications (3)

Publication Number Publication Date
JP2005184831A JP2005184831A (ja) 2005-07-07
JP2005184831A5 true JP2005184831A5 (enExample) 2008-02-07
JP4970723B2 JP4970723B2 (ja) 2012-07-11

Family

ID=34523257

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004365877A Expired - Fee Related JP4970723B2 (ja) 2003-12-19 2004-12-17 マルチステートドライブ回路による半導体スイッチのスイッチング方法及び装置
JP2011265948A Expired - Fee Related JP5466690B2 (ja) 2003-12-19 2011-12-05 マルチステートドライブ回路による半導体スイッチのスイッチング方法および回路

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011265948A Expired - Fee Related JP5466690B2 (ja) 2003-12-19 2011-12-05 マルチステートドライブ回路による半導体スイッチのスイッチング方法および回路

Country Status (4)

Country Link
US (3) US7061301B2 (enExample)
EP (3) EP2256928B1 (enExample)
JP (2) JP4970723B2 (enExample)
DE (1) DE602004019491D1 (enExample)

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JP2003168735A (ja) * 2001-11-30 2003-06-13 Hitachi Ltd 半導体集積回路装置
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TWI258261B (en) * 2004-05-18 2006-07-11 Richtek Techohnology Corp JFET driving circuit applied to DC/DC converter and method thereof
CN100495881C (zh) * 2005-12-21 2009-06-03 昂宝电子(上海)有限公司 用于驱动双极晶体管的系统和用于控制电源变换器的系统
US7502236B2 (en) 2006-10-04 2009-03-10 Power Integrations, Inc. Power supply controller responsive to a feedforward signal
US7576528B2 (en) 2006-10-04 2009-08-18 Power Integrations, Inc. Control circuit responsive to an impedance
US7518885B2 (en) 2006-10-04 2009-04-14 Power Integrations, Inc. Method and apparatus for a control circuit with multiple operation modes
US7760524B2 (en) * 2007-10-17 2010-07-20 Power Integrations, Inc. Method and apparatus to reduce the volume required for bulk capacitance in a power supply
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DE102012104590A1 (de) * 2012-05-29 2013-12-05 Infineon Technologies Ag Treiberschaltung
CN104065251B (zh) * 2013-03-18 2017-03-15 意法半导体研发(上海)有限公司 具有受控栅极放电电流的驱动器电路
US9397652B2 (en) * 2013-12-03 2016-07-19 Infineon Technologies Ag Circuitry and method for operating such circuitry
US9825625B2 (en) 2014-07-09 2017-11-21 CT-Concept Technologie GmbH Multi-stage gate turn-off with dynamic timing
US9473135B2 (en) * 2014-09-29 2016-10-18 Stmicroelectronics International N.V. Driver circuit including driver transistors with controlled body biasing
JP6617571B2 (ja) * 2016-01-14 2019-12-11 富士電機株式会社 半導体スイッチング素子のゲート駆動回路
US9954461B1 (en) 2017-06-12 2018-04-24 Power Integrations, Inc. Multiple stage gate drive for cascode current sensing
US10998843B2 (en) 2019-09-23 2021-05-04 Power Integrations, Inc. External adjustment of a drive control of a switch
US11437911B2 (en) 2020-12-22 2022-09-06 Power Integrations, Inc. Variable drive strength in response to a power converter operating condition
US20250158612A1 (en) * 2023-11-15 2025-05-15 Microchip Technology Incorporated Input buffering gate-to-source (vgs) voltage of a silicon carbide (sic) field-effect transistor (fet)

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US7061301B2 (en) * 2003-12-19 2006-06-13 Power Integrations, Inc. Method and apparatus switching a semiconductor switch with a multi-state drive circuit
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TWI258261B (en) * 2004-05-18 2006-07-11 Richtek Techohnology Corp JFET driving circuit applied to DC/DC converter and method thereof

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