JP4963163B2 - レーザ処理装置及び半導体装置の作製方法 - Google Patents

レーザ処理装置及び半導体装置の作製方法 Download PDF

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Publication number
JP4963163B2
JP4963163B2 JP2005173119A JP2005173119A JP4963163B2 JP 4963163 B2 JP4963163 B2 JP 4963163B2 JP 2005173119 A JP2005173119 A JP 2005173119A JP 2005173119 A JP2005173119 A JP 2005173119A JP 4963163 B2 JP4963163 B2 JP 4963163B2
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substrate
laser
film
rotating body
laser beam
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JP2006032926A5 (https=
JP2006032926A (ja
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幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005173119A 2004-06-16 2005-06-14 レーザ処理装置及び半導体装置の作製方法 Expired - Fee Related JP4963163B2 (ja)

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JP2005173119A JP4963163B2 (ja) 2004-06-16 2005-06-14 レーザ処理装置及び半導体装置の作製方法

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JP2004178596 2004-06-16
JP2004178596 2004-06-16
JP2005173119A JP4963163B2 (ja) 2004-06-16 2005-06-14 レーザ処理装置及び半導体装置の作製方法

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JP2006032926A JP2006032926A (ja) 2006-02-02
JP2006032926A5 JP2006032926A5 (https=) 2008-07-24
JP4963163B2 true JP4963163B2 (ja) 2012-06-27

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4923446B2 (ja) * 2005-06-20 2012-04-25 ソニー株式会社 レーザ処理装置およびレーザ処理方法
US8432423B2 (en) * 2007-09-25 2013-04-30 Kodak Graphics Communications Canada Company Bidirectional imaging with varying speeds
US8047442B2 (en) * 2007-12-03 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
FR2929439B1 (fr) * 2008-03-28 2013-11-08 Commissariat Energie Atomique Procede de stockage d'images et support de stockage correspondant.
KR100951782B1 (ko) * 2009-11-02 2010-04-08 주식회사 엘앤피아너스 패턴 형성장치 및 패턴 형성방법
CN105448792B (zh) * 2014-05-29 2018-02-06 上海和辉光电有限公司 柔性显示器件的制造方法
KR101642130B1 (ko) * 2014-11-14 2016-07-22 한국기계연구원 레이저를 이용한 증착 및 결정화 장치 및 이를 이용한 증착 및 결정화 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2524199B2 (ja) * 1988-07-19 1996-08-14 有限会社イデアリサーチ 自動選別装置
JPH07302909A (ja) * 1994-05-06 1995-11-14 Sony Corp ボトム・ゲート型薄膜トランジスタの製造方法
JPH08236442A (ja) * 1995-02-28 1996-09-13 Mitsubishi Electric Corp 半導体ウエハ，及びその製造方法
JP3886554B2 (ja) * 1995-08-18 2007-02-28 株式会社半導体エネルギー研究所 レーザーアニール方法
JPH0963950A (ja) * 1995-08-25 1997-03-07 Mitsubishi Electric Corp 薄膜半導体の製造方法
JP3609893B2 (ja) * 1996-02-05 2005-01-12 大日本スクリーン製造株式会社 基板処理装置
JP2002176007A (ja) * 2000-12-08 2002-06-21 Mitsubishi Electric Corp レーザ処理装置のレーザパワーの測定方法と測定装置
JP3908124B2 (ja) * 2001-09-07 2007-04-25 株式会社半導体エネルギー研究所 レーザー装置及びレーザー照射方法
JP2003332258A (ja) * 2002-05-15 2003-11-21 Sony Corp レーザアニール装置、半導体デバイス、及び半導体デバイスの製造方法。

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