JP4952233B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4952233B2
JP4952233B2 JP2006342341A JP2006342341A JP4952233B2 JP 4952233 B2 JP4952233 B2 JP 4952233B2 JP 2006342341 A JP2006342341 A JP 2006342341A JP 2006342341 A JP2006342341 A JP 2006342341A JP 4952233 B2 JP4952233 B2 JP 4952233B2
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Japan
Prior art keywords
lead electrode
housing
wall portion
recess
semiconductor element
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JP2006342341A
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English (en)
Japanese (ja)
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JP2007311749A5 (enExample
JP2007311749A (ja
Inventor
才気 山本
育也 新居
宏明 宇川
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Nichia Corp
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Nichia Corp
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38261537&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP4952233(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2006342341A priority Critical patent/JP4952233B2/ja
Priority to CN2007100898344A priority patent/CN101060103B/zh
Priority to US11/785,380 priority patent/US7432589B2/en
Priority to KR1020070037869A priority patent/KR101048977B1/ko
Priority to EP07106416.6A priority patent/EP1848045B1/en
Publication of JP2007311749A publication Critical patent/JP2007311749A/ja
Publication of JP2007311749A5 publication Critical patent/JP2007311749A5/ja
Publication of JP4952233B2 publication Critical patent/JP4952233B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
JP2006342341A 2006-04-19 2006-12-20 半導体装置 Active JP4952233B2 (ja)

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Application Number Priority Date Filing Date Title
JP2006342341A JP4952233B2 (ja) 2006-04-19 2006-12-20 半導体装置
CN2007100898344A CN101060103B (zh) 2006-04-19 2007-04-05 半导体装置
US11/785,380 US7432589B2 (en) 2006-04-19 2007-04-17 Semiconductor device
EP07106416.6A EP1848045B1 (en) 2006-04-19 2007-04-18 Housing for semiconductor light emitting or receiving device
KR1020070037869A KR101048977B1 (ko) 2006-04-19 2007-04-18 반도체 장치

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Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
JP5119621B2 (ja) * 2006-04-21 2013-01-16 日亜化学工業株式会社 発光装置
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
US8474799B2 (en) 2007-11-30 2013-07-02 Tokai Rubber Industries, Ltd. Fluid filled type vibration damping device
KR20100122485A (ko) 2008-02-08 2010-11-22 일루미텍스, 인크. 발광체층 쉐이핑을 위한 시스템 및 방법
KR101438826B1 (ko) * 2008-06-23 2014-09-05 엘지이노텍 주식회사 발광장치
WO2010001543A1 (ja) 2008-06-30 2010-01-07 東海ゴム工業株式会社 流体封入式防振装置
JP5464825B2 (ja) * 2008-07-23 2014-04-09 ローム株式会社 Ｌｅｄモジュール
JP5217800B2 (ja) * 2008-09-03 2013-06-19 日亜化学工業株式会社 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法
KR101007131B1 (ko) * 2008-11-25 2011-01-10 엘지이노텍 주식회사 발광 소자 패키지
JP5233619B2 (ja) * 2008-12-01 2013-07-10 日亜化学工業株式会社 半導体装置
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
USD621799S1 (en) * 2009-01-12 2010-08-17 Cree, Inc. Light emitting diode
USD648686S1 (en) 2010-04-30 2011-11-15 Cree, Inc. Light emitting diode (LED) package
US8598602B2 (en) * 2009-01-12 2013-12-03 Cree, Inc. Light emitting device packages with improved heat transfer
US7923739B2 (en) 2009-06-05 2011-04-12 Cree, Inc. Solid state lighting device
USD641719S1 (en) 2009-06-05 2011-07-19 Cree, Inc. Light emitting diode
US8860043B2 (en) * 2009-06-05 2014-10-14 Cree, Inc. Light emitting device packages, systems and methods
US8686445B1 (en) 2009-06-05 2014-04-01 Cree, Inc. Solid state lighting devices and methods
USD648687S1 (en) 2009-06-05 2011-11-15 Cree, Inc. Light emitting device package
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
JP5347953B2 (ja) * 2009-12-28 2013-11-20 日亜化学工業株式会社 発光装置およびその製造方法
JP5535750B2 (ja) * 2010-04-30 2014-07-02 ローム株式会社 発光素子モジュール
US8269244B2 (en) 2010-06-28 2012-09-18 Cree, Inc. LED package with efficient, isolated thermal path
US8648359B2 (en) 2010-06-28 2014-02-11 Cree, Inc. Light emitting devices and methods
USD643819S1 (en) 2010-07-16 2011-08-23 Cree, Inc. Package for light emitting diode (LED) lighting
CN103210489B (zh) * 2010-11-16 2016-06-15 富士电机株式会社 半导体装置
USD679842S1 (en) 2011-01-03 2013-04-09 Cree, Inc. High brightness LED package
US8610140B2 (en) 2010-12-15 2013-12-17 Cree, Inc. Light emitting diode (LED) packages, systems, devices and related methods
TW201251140A (en) 2011-01-31 2012-12-16 Cree Inc High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion
CN103348496A (zh) 2011-02-07 2013-10-09 克利公司 用于发光二极管（led）发光的部件和方法
JP2013069903A (ja) * 2011-09-22 2013-04-18 Fusheng Industrial Co Ltd 発光ダイオードの支持フレーム構造およびその製作方法（一）
KR102042150B1 (ko) * 2012-09-13 2019-11-07 엘지이노텍 주식회사 발광 소자 및 조명 시스템
US9748164B2 (en) * 2013-03-05 2017-08-29 Nichia Corporation Semiconductor device
TWI553264B (zh) * 2014-05-23 2016-10-11 億光電子工業股份有限公司 承載支架及其製造方法以及從該承載支架所製得之發光裝置及其製造方法
US10177292B2 (en) 2014-05-23 2019-01-08 Everlight Electronics Co., Ltd. Carrier, carrier leadframe, and light emitting device
JP6481349B2 (ja) 2014-12-02 2019-03-13 日亜化学工業株式会社 パッケージの製造方法及び発光装置の製造方法
US20160351462A1 (en) * 2015-05-25 2016-12-01 Inotera Memories, Inc. Fan-out wafer level package and fabrication method thereof
CN106571383B (zh) * 2015-10-08 2020-04-28 联华电子股份有限公司 半导体元件及其制作方法
JP6354809B2 (ja) 2016-08-16 2018-07-11 日亜化学工業株式会社 発光装置の製造方法及び複合基板
JP6717361B2 (ja) * 2018-11-27 2020-07-01 日亜化学工業株式会社 発光装置及びその製造方法
JP7337590B2 (ja) * 2019-08-05 2023-09-04 ローム株式会社 半導体発光装置
US11561338B2 (en) 2019-09-30 2023-01-24 Nichia Corporation Light-emitting module
US11112555B2 (en) 2019-09-30 2021-09-07 Nichia Corporation Light-emitting module with a plurality of light guide plates and a gap therein
JP2024002197A (ja) * 2022-06-23 2024-01-11 スタンレー電気株式会社 半導体発光装置、および、半導体発光装置の製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568499B2 (enExample) * 1973-06-12 1981-02-24
JPS6247156A (ja) * 1985-08-26 1987-02-28 Toshiba Corp 絶縁ゲ−ト型半導体装置
JPS6247156U (enExample) 1985-09-12 1987-03-23
JPH038459A (ja) * 1989-06-05 1991-01-16 Geinzu:Kk シャワーヘッド
JPH04130740A (ja) * 1990-09-21 1992-05-01 Matsushita Electric Works Ltd 半導体パッケージ
US5261157A (en) * 1991-01-22 1993-11-16 Olin Corporation Assembly of electronic packages by vacuum lamination
US5650593A (en) * 1994-05-26 1997-07-22 Amkor Electronics, Inc. Thermally enhanced chip carrier package
JP3707024B2 (ja) * 1997-04-17 2005-10-19 松下電器産業株式会社 電子部品
US6856357B1 (en) * 1999-06-11 2005-02-15 Stmicroelectronics Limited Image sensor packaging
JP3546812B2 (ja) * 1999-10-07 2004-07-28 株式会社デンソー 表面実装型発光ダイオード
US6426565B1 (en) * 2000-03-22 2002-07-30 International Business Machines Corporation Electronic package and method of making same
JP2002009220A (ja) * 2000-06-23 2002-01-11 Hitachi Ltd 樹脂封止型半導体装置
JP3895570B2 (ja) * 2000-12-28 2007-03-22 株式会社ルネサステクノロジ 半導体装置
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
EP1381081A4 (en) * 2001-04-09 2008-02-27 Sumitomo Metal Smi Electronics BGA HOUSING OF THE RADIATION TYPE AND MANUFACTURING METHOD THEREFOR
CN2484636Y (zh) * 2001-05-16 2002-04-03 朋程科技股份有限公司 嵌入式功率半导体封装结构
US6879040B2 (en) * 2002-09-18 2005-04-12 Agilent Technologies, Inc. Surface mountable electronic device
JP4306247B2 (ja) * 2002-12-27 2009-07-29 日亜化学工業株式会社 半導体発光装置
US7023084B2 (en) * 2003-03-18 2006-04-04 Sumitomo Metal (Smi) Electronics Devices Inc. Plastic packaging with high heat dissipation and method for the same
JP4645071B2 (ja) * 2003-06-20 2011-03-09 日亜化学工業株式会社 パッケージ成型体およびそれを用いた半導体装置
KR20050092300A (ko) * 2004-03-15 2005-09-21 삼성전기주식회사 고출력 발광 다이오드 패키지
JP4359195B2 (ja) * 2004-06-11 2009-11-04 株式会社東芝 半導体発光装置及びその製造方法並びに半導体発光ユニット
KR100638721B1 (ko) * 2005-01-28 2006-10-30 삼성전기주식회사 수지 흐름 개선용 리드 프레임 구조를 갖는 측면형발광다이오드 패키지
KR101161384B1 (ko) * 2005-03-29 2012-07-02 서울반도체 주식회사 직렬접속된 발광셀 어레이를 갖는 발광다이오드 칩을탑재한 발광다이오드 패키지
US20080130935A1 (en) * 2006-09-27 2008-06-05 Yamaha Corporation Microphone package

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EP1848045A3 (en) 2012-07-18
US7432589B2 (en) 2008-10-07
KR101048977B1 (ko) 2011-07-12
US20070246841A1 (en) 2007-10-25
CN101060103A (zh) 2007-10-24
EP1848045B1 (en) 2017-12-27
EP1848045A2 (en) 2007-10-24
KR20070103696A (ko) 2007-10-24
JP2007311749A (ja) 2007-11-29

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