JP4926869B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

Info

Publication number
JP4926869B2
JP4926869B2 JP2007194100A JP2007194100A JP4926869B2 JP 4926869 B2 JP4926869 B2 JP 4926869B2 JP 2007194100 A JP2007194100 A JP 2007194100A JP 2007194100 A JP2007194100 A JP 2007194100A JP 4926869 B2 JP4926869 B2 JP 4926869B2
Authority
JP
Japan
Prior art keywords
wiring board
cavity
semiconductor device
manufacturing
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007194100A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009032842A5 (enExample
JP2009032842A (ja
Inventor
文司 倉冨
福美 清水
洋一 河田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2007194100A priority Critical patent/JP4926869B2/ja
Publication of JP2009032842A publication Critical patent/JP2009032842A/ja
Publication of JP2009032842A5 publication Critical patent/JP2009032842A5/ja
Application granted granted Critical
Publication of JP4926869B2 publication Critical patent/JP4926869B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2007194100A 2007-07-26 2007-07-26 半導体装置の製造方法 Expired - Fee Related JP4926869B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007194100A JP4926869B2 (ja) 2007-07-26 2007-07-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007194100A JP4926869B2 (ja) 2007-07-26 2007-07-26 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011168249A Division JP5419230B2 (ja) 2011-08-01 2011-08-01 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2009032842A JP2009032842A (ja) 2009-02-12
JP2009032842A5 JP2009032842A5 (enExample) 2010-08-26
JP4926869B2 true JP4926869B2 (ja) 2012-05-09

Family

ID=40403060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007194100A Expired - Fee Related JP4926869B2 (ja) 2007-07-26 2007-07-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP4926869B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011035142A (ja) * 2009-07-31 2011-02-17 Sanyo Electric Co Ltd 回路装置の製造方法
JP2013191690A (ja) 2012-03-13 2013-09-26 Shin Etsu Chem Co Ltd 半導体装置及びその製造方法
JP5969883B2 (ja) 2012-10-03 2016-08-17 信越化学工業株式会社 半導体装置の製造方法
JP2014103176A (ja) 2012-11-16 2014-06-05 Shin Etsu Chem Co Ltd 支持基材付封止材、封止後半導体素子搭載基板、封止後半導体素子形成ウエハ、半導体装置、及び半導体装置の製造方法
JP6115505B2 (ja) 2013-06-21 2017-04-19 株式会社デンソー 電子装置
JP6125371B2 (ja) 2013-08-15 2017-05-10 信越化学工業株式会社 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11198185A (ja) * 1998-01-19 1999-07-27 Nec Corp 射出圧等圧機構を有する樹脂封止金型
JP4115228B2 (ja) * 2002-09-27 2008-07-09 三洋電機株式会社 回路装置の製造方法
JP2005085832A (ja) * 2003-09-05 2005-03-31 Apic Yamada Corp 樹脂モールド装置
JP2007109831A (ja) * 2005-10-13 2007-04-26 Towa Corp 電子部品の樹脂封止成形方法

Also Published As

Publication number Publication date
JP2009032842A (ja) 2009-02-12

Similar Documents

Publication Publication Date Title
US8597989B2 (en) Manufacturing method of semiconductor device
JP5479247B2 (ja) 半導体装置の製造方法
US8117742B2 (en) Fabrication method of semiconductor integrated circuit device
JP4926869B2 (ja) 半導体装置の製造方法
JPWO2014041684A1 (ja) 半導体装置の製造方法
CN106920757A (zh) 集成电路封装模具组合件
US20060216867A1 (en) Method of manufacturing a semiconductor device
KR100591718B1 (ko) 수지-밀봉형 반도체 장치
JP5419230B2 (ja) 半導体装置およびその製造方法
TW201628107A (zh) 半導體裝置之製造方法
US7214562B2 (en) Method for encapsulating lead frame packages
JP4454608B2 (ja) 半導体集積回路装置の製造方法
CN112838014B (zh) 树脂成形后的引线框的制造方法、树脂成形品的制造方法及引线框
JP6076117B2 (ja) 半導体装置の製造方法
CN101361175A (zh) 电子器件的树脂封固成形方法及其使用的模具组件和引线框
JP5116723B2 (ja) 半導体装置の製造方法
JP2009044037A (ja) 半導体集積回路装置の製造方法
JP4451338B2 (ja) 樹脂封止金型、それを用いた樹脂封止装置、および、樹脂封止方法
JP5233288B2 (ja) 半導体装置の製造方法及び基板
JP3881189B2 (ja) 半導体装置の製造方法
JP2011204786A (ja) 半導体装置の製造方法
JP2023061300A (ja) モールド金型、および半導体装置の製造方法

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20100527

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100709

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100709

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110608

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110616

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110801

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120202

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120208

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150217

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees