JP4917242B2 - 集積回路パッケージの製造方法 - Google Patents
集積回路パッケージの製造方法 Download PDFInfo
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- JP4917242B2 JP4917242B2 JP2002561275A JP2002561275A JP4917242B2 JP 4917242 B2 JP4917242 B2 JP 4917242B2 JP 2002561275 A JP2002561275 A JP 2002561275A JP 2002561275 A JP2002561275 A JP 2002561275A JP 4917242 B2 JP4917242 B2 JP 4917242B2
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- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 49
- 229910003460 diamond Inorganic materials 0.000 claims description 25
- 239000010432 diamond Substances 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 65
- 239000000463 material Substances 0.000 description 33
- 230000017525 heat dissipation Effects 0.000 description 19
- 229910000679 solder Inorganic materials 0.000 description 15
- 239000012790 adhesive layer Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/0425—Making electrodes
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H01L2924/01046—Palladium [Pd]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
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- H01L2924/10253—Silicon [Si]
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本発明は、回路密度が高く、高クロック速度及び高電力レベルで動作する集積回路の従来の実装方法に付随する放熱の問題を、1またはそれ以上のICとヒートスプレッダーとの間の熱インターフェイスとして高い熱容量の材料を用いることにより解決するものである。以下において、種々の実施例を説明する。
上式において、Tj=接合温度(℃);
(ja=接合・周囲間熱抵抗(℃/ワット);
Pd=Tjにおける電力消費(ワット);及び
Ta=周囲温度(℃)。
上式において、(jc=接合・ケース間熱抵抗(℃/ワット);
(jcs=ケース・シンク間熱抵抗(℃/ワット);
(jsa=シンク・周囲間熱抵抗(℃/ワット)。
Claims (3)
- 集積回路パッケージの製造方法であって、
集積型ヒートスプレッダーの蓋の下側表面上にクロム、金、ニッケル、白金、銀、チタン、タングステン及びバナジウムより成る群から選択された金属材料の層を形成し、
ダイアモンドより成る熱伝導性材料の層を金属材料の層の上で成長させ、
ダイの下側表面上の電気接点が基板の上側表面上の電気接点に結合されるようにダイを基板上に取付け、
熱伝導性材料の層がダイの上側表面と接触するように集積型ヒートスプレッダーの蓋をダイ上に取付けるステップより成る集積回路パッケージの製造方法。 - 集積型ヒートスプレッダーは側壁を有し、基板の上側表面にヒートスプレッダーの側壁を結合するステップをさらに含む請求項1の方法。
- 集積型ヒートスプレッダーの側壁は熱伝導性材料により基板の上側表面に結合される請求項2の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/737,117 | 2000-12-14 | ||
US09/737,117 US6653730B2 (en) | 2000-12-14 | 2000-12-14 | Electronic assembly with high capacity thermal interface |
PCT/US2001/044650 WO2002061825A2 (en) | 2000-12-14 | 2001-11-20 | Electronic assembly with high capacity thermal interface and methods of manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005500668A JP2005500668A (ja) | 2005-01-06 |
JP4917242B2 true JP4917242B2 (ja) | 2012-04-18 |
Family
ID=24962646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002561275A Expired - Fee Related JP4917242B2 (ja) | 2000-12-14 | 2001-11-20 | 集積回路パッケージの製造方法 |
Country Status (8)
Country | Link |
---|---|
US (3) | US6653730B2 (ja) |
EP (1) | EP1342268A2 (ja) |
JP (1) | JP4917242B2 (ja) |
KR (1) | KR100617416B1 (ja) |
CN (1) | CN100583420C (ja) |
AU (1) | AU2002249773A1 (ja) |
MY (1) | MY128398A (ja) |
WO (1) | WO2002061825A2 (ja) |
Families Citing this family (134)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2864915B2 (ja) * | 1992-12-07 | 1999-03-08 | 株式会社日立製作所 | 半導体装置の製造方法 |
US6613070B2 (en) * | 1998-08-04 | 2003-09-02 | Baxter International Inc. | System and method for sealing vascular penetrations with hemostatic gels |
US6472742B1 (en) * | 1999-09-30 | 2002-10-29 | Intel Corporation | Thermal gap control |
US7078109B2 (en) * | 2000-02-25 | 2006-07-18 | Thermagon Inc. | Heat spreading thermal interface structure |
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2001
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- 2001-11-20 KR KR1020037007997A patent/KR100617416B1/ko not_active IP Right Cessation
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CN100583420C (zh) | 2010-01-20 |
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AU2002249773A1 (en) | 2002-08-12 |
US6653730B2 (en) | 2003-11-25 |
WO2002061825A2 (en) | 2002-08-08 |
EP1342268A2 (en) | 2003-09-10 |
MY128398A (en) | 2007-01-31 |
US7098079B2 (en) | 2006-08-29 |
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