JP4413649B2 - 放熱構造体及びその製造方法 - Google Patents
放熱構造体及びその製造方法 Download PDFInfo
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- JP4413649B2 JP4413649B2 JP2004059140A JP2004059140A JP4413649B2 JP 4413649 B2 JP4413649 B2 JP 4413649B2 JP 2004059140 A JP2004059140 A JP 2004059140A JP 2004059140 A JP2004059140 A JP 2004059140A JP 4413649 B2 JP4413649 B2 JP 4413649B2
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- Prior art keywords
- thermally conductive
- grease
- sheet
- electrically insulating
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32013—Structure relative to the bonding area, e.g. bond pad the layer connector being larger than the bonding area, e.g. bond pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Combustion & Propulsion (AREA)
- Thermal Sciences (AREA)
- Organic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
電気絶縁性且つ熱伝導性シートの少なくとも一方の表面、及び/又は、発熱体及び/又は放熱体の表面に熱伝導性グリースが塗布する塗布工程、
前記電気絶縁性且つ熱伝導性シートの表面に発熱体又は放熱体の一方の表面を圧着する第1の圧着工程、及び
前記電気絶縁性且つ熱伝導性シートの前記表面とは異なる他方の表面に発熱体又は放熱体の他方の表面を圧着する第2の圧着工程
を含む方法によって製造されることが可能であり、当該製造方法において使用される前記電気絶縁性且つ熱伝導性シートと前記熱伝導性グリースとは非相溶性である。
メチルビニルシリコーン生ゴム系シリコーンゴムシート(サーコンTR:富士高分子工業株式会社製:以下、「MSシート」という)及びフロロシリコーン生ゴム系シリコーンゴムシート(以下、「FSシート」という)のそれぞれを各種のベースオイルに70℃で200時間浸漬した後、各シリコーンゴムシートの質量を測定し、浸漬前の質量に対する増加率(膨潤率:wt%)を決定した。結果を表1に示す。
製品名 アウジモント社製フォンブリンM15(平均分子量が8000であるジフルオロメチレンオキサイドとテトラフルオロエチレンオキサイドとの共重合体で[0051]記載の[化13]に相当する)。
25℃における粘度が500csであるポリジメチルシロキサン([0042]記載の[化2]に相当する)。
25℃での粘度が100csで、フェニル基を5モル%含有するポリジメチルメチルフェニルシロキサン([0043]記載の[化3]に相当する)。
25℃での粘度が800csで、ドデシル基を45モル%含有するポリジメチルメチルドデシルシロキサン([0046]記載の[化6]に相当する)。
25℃での粘度が300csであるポリメチル3、3、3−トリフルオロプロピルシロキサン([0047]記載の[化9]に相当する)。
メチルビニルシリコーン生ゴム100質量部に補強充填剤である乾式シリカ(二酸化ケイ素粉末、日本アエロジル社製、商品名エアルジル200)を5質量部混練したベースに、熱伝導性フィラーとして酸化アルミニウム(昭和電工株式会社製、商品名AL−30)を700質量部添加してコンパウンドとした。その後、加硫剤としてビス・2,4ジクロルベンゾイルパーオキサイド50%含有の加硫剤をコンパウンド中のメチルビニルシリコーン生ゴム100質量部に対して5質量部を添加し均一分散混合し配合物を得た。次に熱加硫プレス機を使用し120℃×5分の1次加硫を行なった後、熱風オーブンで200℃×4時間の2次加硫を行い、厚み0.20mmのシリコーンゴムシートを得た。
実施例1において、前記パーフルオロポリエーテルグリースに代えて、参考例で使用したジメチルシリコーンオイル31質量部に酸化亜鉛(粒径0.5ミクロン)69質量部を混同して得られた稠度250のポリジメチルシロキサングリースを使用したこと以外は同一の条件下で温度サイクル試験を行った。1回目のサイクルでシリコーンゴムシートに亀裂が入り、継続使用不能となった。
Claims (11)
- 電気絶縁性且つ熱伝導性シートを介して発熱体及び放熱体が一体化されている電子デバイスの放熱構造体において、
前記電気絶縁性且つ熱伝導性シートと前記発熱体との間、及び/又は、前記電気絶縁性且つ熱伝導性シートと前記放熱体との間に、
前記電気絶縁性且つ熱伝導性シートと非相溶性である熱伝導性グリースからなる熱伝導性グリース層が存在しており、
前記電気絶縁性且つ熱伝導性シートがメチルビニルシリコーン系ゴム又はフロロシリコーン系ゴムからなり、
前記電気絶縁性且つ熱伝導性シートがメチルビニルシリコーン系ゴムからなる場合は、前記熱伝導性グリースがパーフルオロポリエーテル系組成物、C6−C20アルキル変性シリコーン系組成物又はフッ化アルキル変性シリコーン系組成物からなり、
前記電気絶縁性且つ熱伝導性シートがフロロシリコーン系ゴムからなる場合は、前記熱伝導性グリースがジメチルシリコーン系組成物、パーフルオロポリエーテル系組成物、C6−C20アルキル変性シリコーン系組成物又はメチルフェニルシリコーン系組成物からなる
ことを特徴とする電子デバイスの放熱構造体。 - 前記電気絶縁性且つ熱伝導性シートの両表面上に前記熱伝導性グリース層が存在する、請求項1記載の放熱構造体。
- 前記熱伝導性グリースが粒径の異なる熱伝導性フィラーの混合物を含むことを特徴とする、請求項1又は2に記載の放熱構造体。
- 前記発熱体が半導体装置であることを特徴とする、請求項1乃至3のいずれかに記載の放熱構造体。
- 電気絶縁性且つ熱伝導性シートの少なくとも一方の表面、及び/又は、発熱体及び/又は放熱体の表面に熱伝導性グリースを塗布する塗布工程、
前記電気絶縁性且つ熱伝導性シートの表面に発熱体又は放熱体の一方の前記表面を圧着する第1の圧着工程、及び、
前記電気絶縁性且つ熱伝導性シートの前記表面とは異なる他方の表面に発熱体又は放熱体の他方の前記表面を圧着する第2の圧着工程
を含む電子デバイスの放熱構造体の製造方法であって、
前記電気絶縁性且つ熱伝導性シートと前記熱伝導性グリースとは非相溶性であり、
前記電気絶縁性且つ熱伝導性シートがメチルビニルシリコーン系ゴム又はフロロシリコーン系ゴムからなり、
前記電気絶縁性且つ熱伝導性シートがメチルビニルシリコーン系ゴムからなる場合は、前記熱伝導性グリースがパーフルオロポリエーテル系組成物、C6−C20アルキル変性シリコーン系組成物又はフッ化アルキル変性シリコーン系組成物からなり、
前記電気絶縁性且つ熱伝導性シートがフロロシリコーン系ゴムからなる場合は、前記熱伝導性グリースがジメチルシリコーン系組成物、パーフルオロポリエーテル系組成物、C6−C20アルキル変性シリコーン系組成物又はメチルフェニルシリコーン系組成物からなる
ことを特徴とする電子デバイスの放熱構造体の製造方法。 - 前記塗布工程において、前記電気絶縁性且つ熱伝導性シートの両面に前記熱伝導性グリースが塗布されることを特徴とする、請求項5記載の製造方法。
- 前記塗布工程において、前記発熱体及び放熱体の表面に熱伝導性グリースが塗布されることを特徴とする、請求項5又は6記載の製造方法。
- 前記塗布工程において、前記熱伝導性グリースがスポット塗布されることを特徴とする、請求項5乃至7のいずれかに記載の製造方法。
- 前記二つの圧着工程が同時に行われる、請求項5乃至8のいずれかに記載の製造方法。
- 前記熱伝導性グリースが粒径の異なる熱伝導性フィラーの混合物を含むことを特徴とする、請求項5乃至9のいずれかに記載の製造方法。
- 前記発熱体が半導体装置であることを特徴とする、請求項5乃至10のいずれかに記載の製造方法。
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Free format text: JAPANESE INTERMEDIATE CODE: R350 |
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EXPY | Cancellation because of completion of term |