JP4913041B2 - 強度変化の補償を伴う投影系及びそのための補償素子 - Google Patents
強度変化の補償を伴う投影系及びそのための補償素子 Download PDFInfo
- Publication number
- JP4913041B2 JP4913041B2 JP2007513861A JP2007513861A JP4913041B2 JP 4913041 B2 JP4913041 B2 JP 4913041B2 JP 2007513861 A JP2007513861 A JP 2007513861A JP 2007513861 A JP2007513861 A JP 2007513861A JP 4913041 B2 JP4913041 B2 JP 4913041B2
- Authority
- JP
- Japan
- Prior art keywords
- exposure apparatus
- projection
- projection exposure
- filter
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/02—Telephoto objectives, i.e. systems of the type + - in which the distance from the front vertex to the image plane is less than the equivalent focal length
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0804—Catadioptric systems using two curved mirrors
- G02B17/0812—Catadioptric systems using two curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US57680804P | 2004-06-04 | 2004-06-04 | |
| US60/576,808 | 2004-06-04 | ||
| US63325804P | 2004-12-03 | 2004-12-03 | |
| US60/633,258 | 2004-12-03 | ||
| PCT/EP2005/005979 WO2005119369A1 (en) | 2004-06-04 | 2005-06-03 | Projection system with compensation of intensity variatons and compensation element therefor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011207458A Division JP5134716B2 (ja) | 2004-06-04 | 2011-09-22 | 強度変化の補償を伴う投影系及びそのための補償素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008502127A JP2008502127A (ja) | 2008-01-24 |
| JP2008502127A5 JP2008502127A5 (https=) | 2008-07-03 |
| JP4913041B2 true JP4913041B2 (ja) | 2012-04-11 |
Family
ID=34969021
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007513861A Expired - Fee Related JP4913041B2 (ja) | 2004-06-04 | 2005-06-03 | 強度変化の補償を伴う投影系及びそのための補償素子 |
| JP2011207458A Expired - Fee Related JP5134716B2 (ja) | 2004-06-04 | 2011-09-22 | 強度変化の補償を伴う投影系及びそのための補償素子 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011207458A Expired - Fee Related JP5134716B2 (ja) | 2004-06-04 | 2011-09-22 | 強度変化の補償を伴う投影系及びそのための補償素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8605257B2 (https=) |
| EP (1) | EP1759248A1 (https=) |
| JP (2) | JP4913041B2 (https=) |
| KR (2) | KR101199076B1 (https=) |
| WO (1) | WO2005119369A1 (https=) |
Families Citing this family (70)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
| KR101643112B1 (ko) | 2003-02-26 | 2016-07-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| SG139733A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP3104396B1 (en) | 2003-06-13 | 2018-03-21 | Nikon Corporation | Exposure method, substrate stage, exposure apparatus, and device manufacturing method |
| KR101476087B1 (ko) | 2003-06-19 | 2014-12-23 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
| WO2005006026A2 (en) | 2003-07-01 | 2005-01-20 | Nikon Corporation | Using isotopically specified fluids as optical elements |
| EP2264531B1 (en) | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| EP1643543B1 (en) | 2003-07-09 | 2010-11-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| WO2005006418A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| JP4524669B2 (ja) | 2003-07-25 | 2010-08-18 | 株式会社ニコン | 投影光学系の検査方法および検査装置 |
| KR20190002749A (ko) | 2003-07-28 | 2019-01-08 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
| EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101419192B1 (ko) | 2003-08-29 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1660925B1 (en) | 2003-09-03 | 2015-04-29 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| KR101498437B1 (ko) | 2003-09-29 | 2015-03-03 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
| JP2005136364A (ja) | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | 基板搬送装置、露光装置、並びにデバイス製造方法 |
| KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
| EP1672681B8 (en) | 2003-10-08 | 2011-09-21 | Miyagi Nikon Precision Co., Ltd. | Exposure apparatus, substrate carrying method, exposure method, and method for producing device |
| TW200514138A (en) | 2003-10-09 | 2005-04-16 | Nippon Kogaku Kk | Exposure equipment and exposure method, manufacture method of component |
| EP3370115A1 (en) | 2003-12-03 | 2018-09-05 | Nikon Corporation | Exposure apparatus, exposure method and method for producing a device |
| KR101281397B1 (ko) | 2003-12-15 | 2013-07-02 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
| US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| JP4506674B2 (ja) | 2004-02-03 | 2010-07-21 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| EP1747499A2 (en) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| CN100594430C (zh) | 2004-06-04 | 2010-03-17 | 卡尔蔡司Smt股份公司 | 用于测量光学成像系统的图像质量的系统 |
| US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1780772B1 (en) | 2004-07-12 | 2009-09-02 | Nikon Corporation | Exposure equipment and device manufacturing method |
| JP4599936B2 (ja) * | 2004-08-17 | 2010-12-15 | 株式会社ニコン | 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法 |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7397533B2 (en) | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR20180125636A (ko) | 2005-01-31 | 2018-11-23 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
| US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
| USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
| DE102005041938A1 (de) * | 2005-09-03 | 2007-03-08 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage |
| US7629572B2 (en) * | 2005-10-28 | 2009-12-08 | Carl Zeiss Laser Optics Gmbh | Optical devices and related systems and methods |
| US7518797B2 (en) | 2005-12-02 | 2009-04-14 | Carl Zeiss Smt Ag | Microlithographic exposure apparatus |
| US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE102006013459A1 (de) * | 2006-03-23 | 2007-09-27 | Infineon Technologies Ag | Anordnung zur Übertragung von Strukturelementen einer Photomaske auf ein Substrat und Verfahren zur Übertragung von Strukturelementen einer Photomaske auf ein Substrat |
| DE102006021797A1 (de) * | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
| EP1930771A1 (en) | 2006-12-04 | 2008-06-11 | Carl Zeiss SMT AG | Projection objectives having mirror elements with reflective coatings |
| JP5588176B2 (ja) | 2006-12-28 | 2014-09-10 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 傾斜偏向ミラーを有する反射屈折投影対物器械、投影露光装置、投影露光方法、及びミラー |
| DE102007023411A1 (de) * | 2006-12-28 | 2008-07-03 | Carl Zeiss Smt Ag | Optisches Element, Beleuchtungsoptik für die Mikrolithographie mit mindestens einem derartigen optischen Element sowie Beleuchtungssystem mit einer derartigen Beleuchtungsoptik |
| EP2126636B1 (en) | 2007-01-30 | 2012-06-13 | Carl Zeiss SMT GmbH | Illumination system of a microlithographic projection exposure apparatus |
| WO2008104192A1 (en) * | 2007-02-28 | 2008-09-04 | Carl Zeiss Smt Ag | Catadioptric projection objective with pupil correction |
| WO2008119794A1 (en) * | 2007-04-03 | 2008-10-09 | Carl Zeiss Smt Ag | Optical system, in particular illumination device or projection objective of a microlithographic projection exposure apparatus |
| US7929115B2 (en) * | 2007-06-01 | 2011-04-19 | Carl Zeiss Smt Gmbh | Projection objective and projection exposure apparatus for microlithography |
| US7817250B2 (en) | 2007-07-18 | 2010-10-19 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus |
| JP5224218B2 (ja) | 2007-07-23 | 2013-07-03 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の光学システム |
| JP5269079B2 (ja) | 2007-08-20 | 2013-08-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 反射コーティングを備えたミラー要素を有する投影対物系 |
| US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
| JP5473350B2 (ja) * | 2009-02-13 | 2014-04-16 | キヤノン株式会社 | 照明光学系、露光装置及びデバイスの製造方法 |
| DE102009047179B8 (de) | 2009-11-26 | 2016-08-18 | Carl Zeiss Smt Gmbh | Projektionsobjektiv |
| DE102011084152A1 (de) * | 2011-10-07 | 2013-04-11 | Carl Zeiss Smt Gmbh | Verfahren zur Einstellung der Intensitätsverteilung in einem optischen System einer mikrolithographischen Projektionsbelichtungsanlage, sowie optisches System |
| DE102012205615A1 (de) | 2012-04-04 | 2013-10-10 | Carl Zeiss Smt Gmbh | Beschichtungsverfahren, Beschichtungsanlage und optisches Element mit Beschichtung |
| JP6069919B2 (ja) | 2012-07-11 | 2017-02-01 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板およびその製造方法 |
| JP5746259B2 (ja) * | 2013-05-07 | 2015-07-08 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 反射コーティングを備えたミラー要素を有する投影対物系 |
| CN107430349B (zh) | 2015-03-05 | 2020-03-10 | Asml荷兰有限公司 | 用于检查及量测的方法和设备 |
| DE102016212373A1 (de) | 2016-07-07 | 2018-01-11 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
| DE102017202802A1 (de) * | 2017-02-21 | 2018-08-23 | Carl Zeiss Smt Gmbh | Objektiv und optisches System mit einem solchen Objektiv |
| DE102017208340A1 (de) | 2017-05-17 | 2018-11-22 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsverfahren und Projektionsobjektiv mit Einstellung der Pupillentransmission |
| JP7253717B2 (ja) | 2019-05-30 | 2023-04-07 | パナソニックIpマネジメント株式会社 | 投影装置及びヘッドアップディスプレイ |
| JP7402702B2 (ja) * | 2020-01-31 | 2023-12-21 | リコーインダストリアルソリューションズ株式会社 | 結像光学系および画像表示装置および撮像装置 |
Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0778753A (ja) * | 1993-09-07 | 1995-03-20 | Canon Inc | 投影露光装置及びそれを用いた半導体素子の製造方法 |
| JPH08316125A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JPH10303114A (ja) * | 1997-04-23 | 1998-11-13 | Nikon Corp | 液浸型露光装置 |
| JPH1138323A (ja) * | 1997-07-16 | 1999-02-12 | Nikon Corp | 反射光学系及び露光装置 |
| JP2000058436A (ja) * | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| JP2000331927A (ja) * | 1999-03-12 | 2000-11-30 | Canon Inc | 投影光学系及びそれを用いた投影露光装置 |
| JP2001053002A (ja) * | 1999-07-09 | 2001-02-23 | Carl Zeiss:Fa | 真空紫外線用光学システム |
| JP2003504861A (ja) * | 1999-07-01 | 2003-02-04 | エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ | 空間濾波による画像向上装置および方法 |
| JP2003077827A (ja) * | 2001-05-19 | 2003-03-14 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | マイクロリソグラフィ照明方法およびその方法を実行するための投影レンズ |
| JP2003177319A (ja) * | 2001-08-01 | 2003-06-27 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Euvフォトリソグラフィ用の反射投影レンズ |
| WO2004019128A2 (en) * | 2002-08-23 | 2004-03-04 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
| JP2004335746A (ja) * | 2003-05-08 | 2004-11-25 | Nikon Corp | 投影光学系、露光装置及び露光方法 |
| JP2005519348A (ja) * | 2002-03-08 | 2005-06-30 | カール・ツァイス・エスエムティー・アーゲー | 液浸リソグラフィ用の屈折投影対物レンズ |
| JP2005191381A (ja) * | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
| JP2005195713A (ja) * | 2004-01-05 | 2005-07-21 | Nikon Corp | 投影光学系、露光装置、および露光方法 |
| JP2005235921A (ja) * | 2004-02-18 | 2005-09-02 | Nikon Corp | 光学系の調整方法、結像光学系、露光装置、および露光方法 |
| JP2005531021A (ja) * | 2002-06-25 | 2005-10-13 | カール・ツァイス・エスエムティー・アーゲー | 反射屈折縮小対物レンズ |
| JP2007520893A (ja) * | 2004-02-03 | 2007-07-26 | ロチェスター インスティテュート オブ テクノロジー | 流体を使用したフォトリソグラフィ法及びそのシステム |
| JP2007529762A (ja) * | 2003-12-19 | 2007-10-25 | カール ツァイス エスエムテー アクチエンゲゼルシャフト | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE1462T1 (de) * | 1979-07-27 | 1982-08-15 | Werner W. Dr. Tabarelli | Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe. |
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| US5222112A (en) * | 1990-12-27 | 1993-06-22 | Hitachi, Ltd. | X-ray pattern masking by a reflective reduction projection optical system |
| US5333166A (en) * | 1992-08-28 | 1994-07-26 | Intel Corporation | Self-apodizing collimator for x-ray lithography |
| JP3635684B2 (ja) * | 1994-08-23 | 2005-04-06 | 株式会社ニコン | 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置 |
| JPH07211617A (ja) * | 1994-01-25 | 1995-08-11 | Hitachi Ltd | パターン形成方法,マスク、及び投影露光装置 |
| JP3395801B2 (ja) * | 1994-04-28 | 2003-04-14 | 株式会社ニコン | 反射屈折投影光学系、走査型投影露光装置、及び走査投影露光方法 |
| JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| US6104945A (en) * | 1995-08-01 | 2000-08-15 | Medispectra, Inc. | Spectral volume microprobe arrays |
| US20010041843A1 (en) | 1999-02-02 | 2001-11-15 | Mark Modell | Spectral volume microprobe arrays |
| JP3065017B2 (ja) * | 1997-02-28 | 2000-07-12 | キヤノン株式会社 | 投影露光装置及びデバイスの製造方法 |
| DE19807120A1 (de) * | 1998-02-20 | 1999-08-26 | Zeiss Carl Fa | Optisches System mit Polarisationskompensator |
| US6243203B1 (en) * | 1998-04-24 | 2001-06-05 | U.S. Philips Corporation | Optical system with anti-reflection coating |
| DE19929403A1 (de) * | 1999-06-26 | 2000-12-28 | Zeiss Carl Fa | Objektiv, insbesondere Objektiv für eine Halbleiter-Lithographie-Projektionsbelichtungsanlage und Herstellungverfahren |
| JP2001168000A (ja) * | 1999-12-03 | 2001-06-22 | Nikon Corp | 露光装置の製造方法、および該製造方法によって製造された露光装置を用いたマイクロデバイスの製造方法 |
| US6324003B1 (en) * | 1999-12-23 | 2001-11-27 | Silicon Valley Group, Inc. | Calcium fluoride (CaF2) stress plate and method of making the same |
| JP4532647B2 (ja) * | 2000-02-23 | 2010-08-25 | キヤノン株式会社 | 露光装置 |
| US6480330B1 (en) | 2000-02-24 | 2002-11-12 | Silicon Valley Group, Inc. | Ultraviolet polarization beam splitter for microlithography |
| KR100379246B1 (ko) * | 2000-07-12 | 2003-04-08 | 한국과학기술연구원 | 두께에 따라 빔의 세기 분포 조절이 용이한 연속 중성밀도필터 |
| US20020089758A1 (en) * | 2001-01-05 | 2002-07-11 | Nikon Corporation | Optical component thickness adjustment method, optical component, and position adjustment method for optical component |
| JP4929529B2 (ja) | 2001-03-27 | 2012-05-09 | 株式会社ニコン | 光学系の製造方法、および該製造方法で製造された光学系を備えた露光装置 |
| US6862398B2 (en) * | 2001-03-30 | 2005-03-01 | Texas Instruments Incorporated | System for directed molecular interaction in surface plasmon resonance analysis |
| JP2004526331A (ja) * | 2001-05-15 | 2004-08-26 | カール・ツアイス・エスエムテイ・アーゲー | フッ化物結晶レンズを含む対物レンズ |
| US6683710B2 (en) * | 2001-06-01 | 2004-01-27 | Optical Research Associates | Correction of birefringence in cubic crystalline optical systems |
| BR0103248A (pt) * | 2001-06-13 | 2004-03-23 | Fundacao De Amparo A Pesquisa | Elemento óptico com modulação complexa completa de frentes de onda de luz, e seu processo de obtenção |
| DE10133841A1 (de) * | 2001-07-18 | 2003-02-06 | Zeiss Carl | Objektiv mit Kristall-Linsen |
| EP1291680A2 (en) | 2001-08-27 | 2003-03-12 | Nikon Corporation | Multilayer-film mirrors for use in extreme UV optical systems, and methods for manufacturing such mirrors exhibiting improved wave aberrations |
| DE10237430A1 (de) | 2001-09-17 | 2003-04-03 | Zeiss Carl Semiconductor Mfg | Verfahren und Beschichtungsanlage zum Beschichten von Substraten für optische Komponenten |
| JP2003266011A (ja) * | 2001-09-17 | 2003-09-24 | Cark Zeiss Smt Ag | 光学部材用の基板の塗布方法および塗布装置 |
| AU2002360329A1 (en) * | 2001-10-30 | 2003-05-12 | Optical Research Associates | Structures and methods for reducing aberration in optical systems |
| JP4016179B2 (ja) * | 2002-02-28 | 2007-12-05 | ソニー株式会社 | 露光装置及び収束レンズの制御方法 |
| US7075721B2 (en) * | 2002-03-06 | 2006-07-11 | Corning Incorporated | Compensator for radially symmetric birefringence |
| DE10218989A1 (de) | 2002-04-24 | 2003-11-06 | Zeiss Carl Smt Ag | Projektionsverfahren und Projektionssystem mit optischer Filterung |
| US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| DE60308161T2 (de) * | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
| WO2005069078A1 (en) * | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
| KR20160085375A (ko) * | 2004-05-17 | 2016-07-15 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
-
2005
- 2005-06-03 KR KR1020077000237A patent/KR101199076B1/ko not_active Expired - Fee Related
- 2005-06-03 JP JP2007513861A patent/JP4913041B2/ja not_active Expired - Fee Related
- 2005-06-03 KR KR1020117023187A patent/KR101248328B1/ko not_active Expired - Fee Related
- 2005-06-03 EP EP05746777A patent/EP1759248A1/en not_active Withdrawn
- 2005-06-03 WO PCT/EP2005/005979 patent/WO2005119369A1/en not_active Ceased
- 2005-06-03 US US11/628,356 patent/US8605257B2/en not_active Expired - Fee Related
-
2011
- 2011-09-22 JP JP2011207458A patent/JP5134716B2/ja not_active Expired - Fee Related
Patent Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0778753A (ja) * | 1993-09-07 | 1995-03-20 | Canon Inc | 投影露光装置及びそれを用いた半導体素子の製造方法 |
| JPH08316125A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JPH10303114A (ja) * | 1997-04-23 | 1998-11-13 | Nikon Corp | 液浸型露光装置 |
| JPH1138323A (ja) * | 1997-07-16 | 1999-02-12 | Nikon Corp | 反射光学系及び露光装置 |
| JP2000058436A (ja) * | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| JP2000331927A (ja) * | 1999-03-12 | 2000-11-30 | Canon Inc | 投影光学系及びそれを用いた投影露光装置 |
| JP2003504861A (ja) * | 1999-07-01 | 2003-02-04 | エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ | 空間濾波による画像向上装置および方法 |
| JP2001053002A (ja) * | 1999-07-09 | 2001-02-23 | Carl Zeiss:Fa | 真空紫外線用光学システム |
| JP2003077827A (ja) * | 2001-05-19 | 2003-03-14 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | マイクロリソグラフィ照明方法およびその方法を実行するための投影レンズ |
| JP2003177319A (ja) * | 2001-08-01 | 2003-06-27 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Euvフォトリソグラフィ用の反射投影レンズ |
| JP2005519348A (ja) * | 2002-03-08 | 2005-06-30 | カール・ツァイス・エスエムティー・アーゲー | 液浸リソグラフィ用の屈折投影対物レンズ |
| JP2005531021A (ja) * | 2002-06-25 | 2005-10-13 | カール・ツァイス・エスエムティー・アーゲー | 反射屈折縮小対物レンズ |
| WO2004019128A2 (en) * | 2002-08-23 | 2004-03-04 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
| JP2005536775A (ja) * | 2002-08-23 | 2005-12-02 | 株式会社ニコン | 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法 |
| JP2004335746A (ja) * | 2003-05-08 | 2004-11-25 | Nikon Corp | 投影光学系、露光装置及び露光方法 |
| JP2007529762A (ja) * | 2003-12-19 | 2007-10-25 | カール ツァイス エスエムテー アクチエンゲゼルシャフト | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
| JP2005191381A (ja) * | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
| JP2005195713A (ja) * | 2004-01-05 | 2005-07-21 | Nikon Corp | 投影光学系、露光装置、および露光方法 |
| JP2007520893A (ja) * | 2004-02-03 | 2007-07-26 | ロチェスター インスティテュート オブ テクノロジー | 流体を使用したフォトリソグラフィ法及びそのシステム |
| JP2005235921A (ja) * | 2004-02-18 | 2005-09-02 | Nikon Corp | 光学系の調整方法、結像光学系、露光装置、および露光方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008502127A (ja) | 2008-01-24 |
| KR20070041497A (ko) | 2007-04-18 |
| KR101248328B1 (ko) | 2013-04-01 |
| JP5134716B2 (ja) | 2013-01-30 |
| EP1759248A1 (en) | 2007-03-07 |
| WO2005119369A1 (en) | 2005-12-15 |
| KR20110123792A (ko) | 2011-11-15 |
| KR101199076B1 (ko) | 2012-11-07 |
| US8605257B2 (en) | 2013-12-10 |
| JP2012028803A (ja) | 2012-02-09 |
| US20080094599A1 (en) | 2008-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4913041B2 (ja) | 強度変化の補償を伴う投影系及びそのための補償素子 | |
| JP2008502127A5 (https=) | ||
| KR100549776B1 (ko) | 공간필터링을 통한 이미지향상의 장치 및 방법 | |
| EP2177934B1 (en) | High transmission, high aperture catadioptric projection objective and projection exposure apparatus | |
| US6898011B2 (en) | Multi-layered film reflector manufacturing method | |
| US20070242250A1 (en) | Objective with crystal lenses | |
| US8441613B2 (en) | Projection objective and projection exposure apparatus for microlithography | |
| JP5913471B2 (ja) | 傾斜偏向ミラーを有する反射屈折投影対物器械、投影露光装置、投影露光方法、及びミラー | |
| TWI516873B (zh) | 用於微影euv投影曝光設備的投影物鏡 | |
| TWI554839B (zh) | 微影投射曝光裝置之照明系統 | |
| TW201510674A (zh) | 微影設備及改變光輻射分佈的方法 | |
| TWI595308B (zh) | 光微影方法與系統 | |
| JP2009507366A (ja) | マイクロリソグラフィック投影露光装置 | |
| JP4421604B2 (ja) | 光学系、特に、マイクロリソグラフィ投影露光装置の照明装置又は投影対物レンズ | |
| WO2012123000A1 (en) | Method of operating a microlithographic projection exposure apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080515 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080515 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20090317 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20090317 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20090331 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110322 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110622 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110629 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110922 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111219 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120118 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4913041 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150127 Year of fee payment: 3 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |