JP4869509B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4869509B2
JP4869509B2 JP2001217315A JP2001217315A JP4869509B2 JP 4869509 B2 JP4869509 B2 JP 4869509B2 JP 2001217315 A JP2001217315 A JP 2001217315A JP 2001217315 A JP2001217315 A JP 2001217315A JP 4869509 B2 JP4869509 B2 JP 4869509B2
Authority
JP
Japan
Prior art keywords
film
insulating film
gate electrode
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001217315A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003031587A (ja
JP2003031587A5 (enExample
Inventor
誠之 梶原
里築子 長尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001217315A priority Critical patent/JP4869509B2/ja
Priority to US10/193,681 priority patent/US7151016B2/en
Publication of JP2003031587A publication Critical patent/JP2003031587A/ja
Priority to US11/611,579 priority patent/US7709894B2/en
Publication of JP2003031587A5 publication Critical patent/JP2003031587A5/ja
Application granted granted Critical
Publication of JP4869509B2 publication Critical patent/JP4869509B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001217315A 2001-07-17 2001-07-17 半導体装置の作製方法 Expired - Fee Related JP4869509B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001217315A JP4869509B2 (ja) 2001-07-17 2001-07-17 半導体装置の作製方法
US10/193,681 US7151016B2 (en) 2001-07-17 2002-07-12 Method of manufacturing a semiconductor device that includes a hydrogen concentration depth profile
US11/611,579 US7709894B2 (en) 2001-07-17 2006-12-15 Semiconductor device including a transistor with a gate electrode having a taper portion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001217315A JP4869509B2 (ja) 2001-07-17 2001-07-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003031587A JP2003031587A (ja) 2003-01-31
JP2003031587A5 JP2003031587A5 (enExample) 2008-06-05
JP4869509B2 true JP4869509B2 (ja) 2012-02-08

Family

ID=19051662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001217315A Expired - Fee Related JP4869509B2 (ja) 2001-07-17 2001-07-17 半導体装置の作製方法

Country Status (2)

Country Link
US (2) US7151016B2 (enExample)
JP (1) JP4869509B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101032337B1 (ko) * 2002-12-13 2011-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 및 그의 제조방법
US7485579B2 (en) * 2002-12-13 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2004200378A (ja) * 2002-12-18 2004-07-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4663963B2 (ja) * 2003-02-17 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4171428B2 (ja) * 2003-03-20 2008-10-22 三洋電機株式会社 光起電力装置
JP2005079312A (ja) * 2003-08-29 2005-03-24 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体製造装置並びに液晶表示装置
KR100635048B1 (ko) * 2003-11-25 2006-10-17 삼성에스디아이 주식회사 박막 트랜지스터, 이의 제조 방법 및 이를 사용하는 평판표시 장치
JP2005228819A (ja) * 2004-02-10 2005-08-25 Mitsubishi Electric Corp 半導体装置
TWM276311U (en) * 2005-04-19 2005-09-21 Quanta Comp Inc Keyboard module heat dissipation film
JP2007053355A (ja) * 2005-07-22 2007-03-01 Semiconductor Energy Lab Co Ltd 半導体装置
US8115206B2 (en) * 2005-07-22 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2007273919A (ja) 2006-03-31 2007-10-18 Nec Corp 半導体装置及びその製造方法
KR101266448B1 (ko) 2006-07-20 2013-05-22 삼성디스플레이 주식회사 박막 트랜지스터와 이를 포함하는 표시 기판 및 이의제조방법
JP5459899B2 (ja) 2007-06-01 2014-04-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4530179B2 (ja) * 2008-01-22 2010-08-25 Ｏｋｉセミコンダクタ株式会社 フォトダイオードおよびそれを備えた紫外線センサ、並びにフォトダイオードの製造方法
JP2008300865A (ja) * 2008-07-30 2008-12-11 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体製造装置並びに液晶表示装置
TWI570809B (zh) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI570920B (zh) * 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9766763B2 (en) 2014-12-26 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Functional panel, light-emitting panel, display panel, and sensor panel
CN107221563A (zh) * 2017-05-10 2017-09-29 陕西师范大学 一种底栅自对准结构金属氧化物薄膜晶体管及其制备方法
JP6787268B2 (ja) * 2017-07-20 2020-11-18 株式会社Sumco 半導体エピタキシャルウェーハおよびその製造方法、ならびに固体撮像素子の製造方法
CN108962734B (zh) * 2018-06-27 2021-01-01 武汉华星光电半导体显示技术有限公司 一种多晶硅半导体层的制备方法、薄膜晶体管及制备方法
WO2024190116A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
CN120770210A (zh) * 2023-03-16 2025-10-10 株式会社日本显示器 半导体装置及其制造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4319395A (en) * 1979-06-28 1982-03-16 Motorola, Inc. Method of making self-aligned device
JP2564725B2 (ja) * 1991-12-24 1996-12-18 株式会社半導体エネルギー研究所 Ｍｏｓ型トランジスタの作製方法
EP0566838A3 (en) * 1992-02-21 1996-07-31 Matsushita Electric Industrial Co Ltd Manufacturing method of thin film transistor
JPH06148685A (ja) 1992-11-13 1994-05-27 Toshiba Corp 液晶表示装置
US5719065A (en) * 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
JP3398453B2 (ja) 1994-02-24 2003-04-21 株式会社東芝 薄膜トランジスタの製造方法
JPH08274336A (ja) 1995-03-30 1996-10-18 Toshiba Corp 多結晶半導体薄膜トランジスタ及びその製造方法
JPH09260671A (ja) 1996-03-25 1997-10-03 Toshiba Corp 薄膜トランジスタおよびそれを用いた液晶表示装置
US6274443B1 (en) * 1998-09-28 2001-08-14 Advanced Micro Devices, Inc. Simplified graded LDD transistor using controlled polysilicon gate profile
JP2000277738A (ja) * 1999-03-19 2000-10-06 Fujitsu Ltd 薄膜トランジスタおよびその製造方法
JP4869472B2 (ja) * 1999-07-22 2012-02-08 株式会社半導体エネルギー研究所 半導体装置
TW495854B (en) 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW565939B (en) * 2000-04-07 2003-12-11 Koninkl Philips Electronics Nv Electronic device manufacture
KR100771258B1 (ko) * 2000-05-09 2007-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 본인 인증 시스템과 본인 인증 방법 및 휴대 전화 장치
TWI286338B (en) 2000-05-12 2007-09-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP5046439B2 (ja) 2000-05-12 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4954387B2 (ja) 2000-05-29 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW501282B (en) 2000-06-07 2002-09-01 Semiconductor Energy Lab Method of manufacturing semiconductor device
JP4064075B2 (ja) 2000-06-07 2008-03-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW544938B (en) * 2001-06-01 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
TW550648B (en) * 2001-07-02 2003-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
US7151016B2 (en) 2006-12-19
US7709894B2 (en) 2010-05-04
US20070102704A1 (en) 2007-05-10
US20030020118A1 (en) 2003-01-30
JP2003031587A (ja) 2003-01-31

Similar Documents

Publication Publication Date Title
JP4869509B2 (ja) 半導体装置の作製方法
JP4831885B2 (ja) 半導体装置の作製方法
JP5078205B2 (ja) レーザ照射装置
JP2003045874A (ja) 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
US7501653B2 (en) Method of manufacturing semiconductor device having a circuit including thin film transistors
JP5046439B2 (ja) 半導体装置の作製方法
JP5292453B2 (ja) 半導体装置の作製方法
US7615473B2 (en) Method of introducing ion and method of manufacturing semiconductor device
JP5520911B2 (ja) 半導体装置の作製方法
JP2012142571A (ja) 半導体装置
JP4968996B2 (ja) 半導体装置の作製方法
JP6087970B2 (ja) 表示装置、表示モジュール及び電子機器
JP4641598B2 (ja) 半導体装置の作製方法
JP4954387B2 (ja) 半導体装置の作製方法
JP4255639B2 (ja) 半導体装置の作製方法
JP6068767B2 (ja) 半導体装置
JP4302357B2 (ja) 半導体装置の作製方法
JP6553114B2 (ja) 半導体装置、表示モジュール及び電子機器
JP4968982B2 (ja) 半導体装置の作製方法
JP5799132B2 (ja) 表示装置、表示モジュール、及び電子機器
JP4677546B2 (ja) 半導体装置の作製方法
JP6412181B2 (ja) 半導体装置
JP4926321B2 (ja) 半導体装置の作製方法
JP5448268B2 (ja) 半導体装置
JP5703148B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080417

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080417

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110623

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110628

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110804

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111115

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111116

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141125

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141125

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees