JP2003031587A5 - - Google Patents
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- JP2003031587A5 JP2003031587A5 JP2001217315A JP2001217315A JP2003031587A5 JP 2003031587 A5 JP2003031587 A5 JP 2003031587A5 JP 2001217315 A JP2001217315 A JP 2001217315A JP 2001217315 A JP2001217315 A JP 2001217315A JP 2003031587 A5 JP2003031587 A5 JP 2003031587A5
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Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001217315A JP4869509B2 (ja) | 2001-07-17 | 2001-07-17 | 半導体装置の作製方法 |
| US10/193,681 US7151016B2 (en) | 2001-07-17 | 2002-07-12 | Method of manufacturing a semiconductor device that includes a hydrogen concentration depth profile |
| US11/611,579 US7709894B2 (en) | 2001-07-17 | 2006-12-15 | Semiconductor device including a transistor with a gate electrode having a taper portion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001217315A JP4869509B2 (ja) | 2001-07-17 | 2001-07-17 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003031587A JP2003031587A (ja) | 2003-01-31 |
| JP2003031587A5 true JP2003031587A5 (enExample) | 2008-06-05 |
| JP4869509B2 JP4869509B2 (ja) | 2012-02-08 |
Family
ID=19051662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001217315A Expired - Fee Related JP4869509B2 (ja) | 2001-07-17 | 2001-07-17 | 半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US7151016B2 (enExample) |
| JP (1) | JP4869509B2 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101032337B1 (ko) * | 2002-12-13 | 2011-05-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 및 그의 제조방법 |
| US7485579B2 (en) * | 2002-12-13 | 2009-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| JP2004200378A (ja) * | 2002-12-18 | 2004-07-15 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP4663963B2 (ja) * | 2003-02-17 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4171428B2 (ja) * | 2003-03-20 | 2008-10-22 | 三洋電機株式会社 | 光起電力装置 |
| JP2005079312A (ja) * | 2003-08-29 | 2005-03-24 | Mitsubishi Electric Corp | 半導体装置の製造方法およびそれに用いられる半導体製造装置並びに液晶表示装置 |
| KR100635048B1 (ko) * | 2003-11-25 | 2006-10-17 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이의 제조 방법 및 이를 사용하는 평판표시 장치 |
| JP2005228819A (ja) * | 2004-02-10 | 2005-08-25 | Mitsubishi Electric Corp | 半導体装置 |
| TWM276311U (en) * | 2005-04-19 | 2005-09-21 | Quanta Comp Inc | Keyboard module heat dissipation film |
| US8115206B2 (en) | 2005-07-22 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2007053355A (ja) * | 2005-07-22 | 2007-03-01 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2007273919A (ja) * | 2006-03-31 | 2007-10-18 | Nec Corp | 半導体装置及びその製造方法 |
| KR101266448B1 (ko) | 2006-07-20 | 2013-05-22 | 삼성디스플레이 주식회사 | 박막 트랜지스터와 이를 포함하는 표시 기판 및 이의제조방법 |
| JP5459899B2 (ja) | 2007-06-01 | 2014-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4530179B2 (ja) * | 2008-01-22 | 2010-08-25 | Ｏｋｉセミコンダクタ株式会社 | フォトダイオードおよびそれを備えた紫外線センサ、並びにフォトダイオードの製造方法 |
| JP2008300865A (ja) * | 2008-07-30 | 2008-12-11 | Mitsubishi Electric Corp | 半導体装置の製造方法およびそれに用いられる半導体製造装置並びに液晶表示装置 |
| TWI570809B (zh) * | 2011-01-12 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TWI570920B (zh) * | 2011-01-26 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US9766763B2 (en) | 2014-12-26 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, light-emitting panel, display panel, and sensor panel |
| CN107221563A (zh) * | 2017-05-10 | 2017-09-29 | 陕西师范大学 | 一种底栅自对准结构金属氧化物薄膜晶体管及其制备方法 |
| JP6787268B2 (ja) * | 2017-07-20 | 2020-11-18 | 株式会社Sumco | 半導体エピタキシャルウェーハおよびその製造方法、ならびに固体撮像素子の製造方法 |
| CN108962734B (zh) * | 2018-06-27 | 2021-01-01 | 武汉华星光电半导体显示技术有限公司 | 一种多晶硅半导体层的制备方法、薄膜晶体管及制备方法 |
| JPWO2024190116A1 (enExample) * | 2023-03-16 | 2024-09-19 | ||
| JPWO2024190115A1 (enExample) * | 2023-03-16 | 2024-09-19 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4319395A (en) * | 1979-06-28 | 1982-03-16 | Motorola, Inc. | Method of making self-aligned device |
| JP2564725B2 (ja) * | 1991-12-24 | 1996-12-18 | 株式会社半導体エネルギー研究所 | Ｍｏｓ型トランジスタの作製方法 |
| EP0566838A3 (en) * | 1992-02-21 | 1996-07-31 | Matsushita Electric Industrial Co Ltd | Manufacturing method of thin film transistor |
| JPH06148685A (ja) | 1992-11-13 | 1994-05-27 | Toshiba Corp | 液晶表示装置 |
| US5719065A (en) * | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
| JP3398453B2 (ja) | 1994-02-24 | 2003-04-21 | 株式会社東芝 | 薄膜トランジスタの製造方法 |
| JPH08274336A (ja) | 1995-03-30 | 1996-10-18 | Toshiba Corp | 多結晶半導体薄膜トランジスタ及びその製造方法 |
| JPH09260671A (ja) | 1996-03-25 | 1997-10-03 | Toshiba Corp | 薄膜トランジスタおよびそれを用いた液晶表示装置 |
| US6274443B1 (en) * | 1998-09-28 | 2001-08-14 | Advanced Micro Devices, Inc. | Simplified graded LDD transistor using controlled polysilicon gate profile |
| JP2000277738A (ja) * | 1999-03-19 | 2000-10-06 | Fujitsu Ltd | 薄膜トランジスタおよびその製造方法 |
| JP4869472B2 (ja) * | 1999-07-22 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TW495854B (en) | 2000-03-06 | 2002-07-21 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| TW565939B (en) * | 2000-04-07 | 2003-12-11 | Koninkl Philips Electronics Nv | Electronic device manufacture |
| KR100771258B1 (ko) * | 2000-05-09 | 2007-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 본인 인증 시스템과 본인 인증 방법 및 휴대 전화 장치 |
| TWI224806B (en) | 2000-05-12 | 2004-12-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| JP5046439B2 (ja) | 2000-05-12 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4954387B2 (ja) | 2000-05-29 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW501282B (en) | 2000-06-07 | 2002-09-01 | Semiconductor Energy Lab | Method of manufacturing semiconductor device |
| JP4064075B2 (ja) | 2000-06-07 | 2008-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4854866B2 (ja) * | 2001-04-27 | 2012-01-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW544938B (en) * | 2001-06-01 | 2003-08-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| TW550648B (en) * | 2001-07-02 | 2003-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
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2001
- 2001-07-17 JP JP2001217315A patent/JP4869509B2/ja not_active Expired - Fee Related
-
2002
- 2002-07-12 US US10/193,681 patent/US7151016B2/en not_active Expired - Fee Related
-
2006
- 2006-12-15 US US11/611,579 patent/US7709894B2/en not_active Expired - Fee Related