JP4866835B2 - 電荷を非対称に捕獲する多値メモリセル - Google Patents
電荷を非対称に捕獲する多値メモリセル Download PDFInfo
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- JP4866835B2 JP4866835B2 JP2007500871A JP2007500871A JP4866835B2 JP 4866835 B2 JP4866835 B2 JP 4866835B2 JP 2007500871 A JP2007500871 A JP 2007500871A JP 2007500871 A JP2007500871 A JP 2007500871A JP 4866835 B2 JP4866835 B2 JP 4866835B2
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- 230000015654 memory Effects 0.000 title claims description 83
- 238000000034 method Methods 0.000 claims description 27
- 230000008569 process Effects 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002159 nanocrystal Substances 0.000 claims description 2
- 230000004044 response Effects 0.000 claims description 2
- 239000013642 negative control Substances 0.000 claims 1
- 238000007667 floating Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7887—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Description
以上のように、本発明に係るNAND型多値メモリセルは、非対称に電荷を保持できる電荷捕獲型メモリであり、2つのデータビットを記憶することができる。このメモリセルは、電荷捕獲機能により、高メモリ密度、低電力消費、及び高信頼性が達成される。
Claims (12)
- 第1の導電材料からなる基板と、
前記基板内に形成され、第2の導電材料からなる第1及び第2の活性領域と、
前記第1及び第2の活性領域の中間領域の上方に形成され、延在部を備える制御ゲートと、
前記制御ゲート及び前記基板の間に形成された不連続な電荷捕獲層と、
を有するNAND型多値メモリセルであって、
前記不連続な電荷捕獲層は、第1の誘電体層により前記制御ゲートから絶縁され、且つ第2の誘電体層により前記基板から絶縁され、
前記制御ゲートの延在部は、前記不連続な電荷捕獲層内に延在して前記不連続な電荷捕獲層を分離するが、前記第2の誘電体層を分離せず、
前記不連続な電荷捕獲層は、前記第1及び第2の活性領域に対する非対称のバイアスと−10V〜−15Vの負の制御ゲート電圧とに応じて、前記第1の活性領域近傍の第1のデータビット及び前記第2の活性領域近傍の第2のデータビットについて非対称に電荷を捕獲する
ことを特徴とするNAND型多値メモリセル。 - 請求項1記載のNAND型多値メモリセルにおいて、
前記第1の導電材料は、p型導電材料であることを特徴とするNAND型多値メモリセル。 - 請求項1記載のNAND型多値メモリセルにおいて、
前記第2の導電材料は、n型導電材料であることを特徴とするNAND型多値メモリセル。 - 請求項1記載のNAND型多値メモリセルにおいて、
前記第1の活性領域はドレイン領域であり、前記第2の活性領域はソース領域であることを特徴とするNAND型多値メモリセル。 - 請求項1記載のNAND型多値メモリセルにおいて、
前記第1の誘電体層は、酸化アルミニウムからなることを特徴とするNAND型多値メモリセル。 - 請求項1記載のNAND型多値メモリセルにおいて、
前記第2の誘電体層は、酸化アルミニウムからなることを特徴とするNAND型多値メモリセル。 - 請求項1記載のNAND型多値メモリセルにおいて、
前記不連続な電荷捕獲層は、窒化物からなることを特徴とするNAND型多値メモリセル。 - 請求項1記載のNAND型多値メモリセルにおいて、
前記不連続な電荷捕獲層は、シリコンナノ結晶からなることを特徴とするNAND型多値メモリセル。 - 請求項1記載のNAND型多値メモリセルにおいて、
前記不連続な電荷捕獲層は、ゲートに起因してドレインで電流漏れを発生させる正孔注入処理により消去処理を実行することを特徴とするNAND型多値メモリセル。 - 請求項1記載のNAND型多値メモリセルにおいて、
前記不連続な電荷捕獲層は、ゲートに起因してドレインで電流漏れを発生させる正孔注入処理により書き込み処理を実行することを特徴とするNAND型多値メモリセル。 - 請求項1記載のNAND型多値メモリセルにおいて、
前記不連続な電荷捕獲層は、電子注入により消去処理を実行することを特徴とするNAND型多値メモリセル。 - 請求項1記載のNAND型多値メモリセルにおいて、
前記不連続な電荷捕獲層は、電子注入により書き込み処理を実行することを特徴とするNAND型多値メモリセル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/785,785 US7072217B2 (en) | 2004-02-24 | 2004-02-24 | Multi-state memory cell with asymmetric charge trapping |
US10/785,785 | 2004-02-24 | ||
PCT/US2005/004765 WO2005083797A1 (en) | 2004-02-24 | 2005-02-15 | Multi-state memory cell with asymmetric charge trapping |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010247676A Division JP2011066436A (ja) | 2004-02-24 | 2010-11-04 | 電荷を非対称に捕獲する多値メモリセル |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007523501A JP2007523501A (ja) | 2007-08-16 |
JP4866835B2 true JP4866835B2 (ja) | 2012-02-01 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2007500871A Active JP4866835B2 (ja) | 2004-02-24 | 2005-02-15 | 電荷を非対称に捕獲する多値メモリセル |
JP2010247676A Pending JP2011066436A (ja) | 2004-02-24 | 2010-11-04 | 電荷を非対称に捕獲する多値メモリセル |
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JP2010247676A Pending JP2011066436A (ja) | 2004-02-24 | 2010-11-04 | 電荷を非対称に捕獲する多値メモリセル |
Country Status (7)
Country | Link |
---|---|
US (4) | US7072217B2 (ja) |
EP (2) | EP1719185A1 (ja) |
JP (2) | JP4866835B2 (ja) |
KR (1) | KR100852849B1 (ja) |
CN (1) | CN1922737B (ja) |
TW (1) | TWI267990B (ja) |
WO (1) | WO2005083797A1 (ja) |
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EP1719185A1 (en) | 2006-11-08 |
EP2416367A2 (en) | 2012-02-08 |
EP2416367A3 (en) | 2012-04-04 |
US7072217B2 (en) | 2006-07-04 |
KR100852849B1 (ko) | 2008-08-18 |
US7911837B2 (en) | 2011-03-22 |
JP2007523501A (ja) | 2007-08-16 |
CN1922737A (zh) | 2007-02-28 |
US20060203554A1 (en) | 2006-09-14 |
US20100039869A1 (en) | 2010-02-18 |
US7577027B2 (en) | 2009-08-18 |
CN1922737B (zh) | 2010-05-05 |
TWI267990B (en) | 2006-12-01 |
KR20060118596A (ko) | 2006-11-23 |
US20060203555A1 (en) | 2006-09-14 |
TW200532925A (en) | 2005-10-01 |
US7616482B2 (en) | 2009-11-10 |
JP2011066436A (ja) | 2011-03-31 |
US20050185466A1 (en) | 2005-08-25 |
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