JP4853287B2 - Cmp研磨剤及び基板の研磨方法 - Google Patents
Cmp研磨剤及び基板の研磨方法 Download PDFInfo
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- JP4853287B2 JP4853287B2 JP2006537753A JP2006537753A JP4853287B2 JP 4853287 B2 JP4853287 B2 JP 4853287B2 JP 2006537753 A JP2006537753 A JP 2006537753A JP 2006537753 A JP2006537753 A JP 2006537753A JP 4853287 B2 JP4853287 B2 JP 4853287B2
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- acid
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- cmp
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Description
[実施例1〜実施例6及び比較例1〜比較例5]
(酸化セリウム粒子及び酸化セリウムスラリの作製)
炭酸セリウム水和物60kgをアルミナ製容器に入れ、830℃で2時間空気中で焼成することにより黄白色の粉末を約30kg得た。この粉末をX線回折法で相同定を行なったところ酸化セリウムであること確認した。焼成粉末粒子径は30〜100μmであった。酸化セリウム粒子粉末30kgをジェットミルを用いて乾式粉砕を行なった。多結晶体の比表面積をBET法により測定した結果、9m2/gであった。
実施例1では、市販のポリアクリル酸水溶液(重量平均分子量5000)(40重量%)40.5gと脱イオン水4600gを混合し、酸化セリウム(セリア)スラリ混合後の研磨剤6000g中の硫酸濃度が200ppmになるように硫酸(96重量%)を1.25g添加後、アンモニア水(25重量%)にてpH4.8に調整し、最後に水溶液重量が4800gになるように脱イオン水を混合して添加液を得た。
実施例1〜6及び比較例1〜5の添加液4800gと上記の酸化セリウムスラリ(固形分:5重量%)1200gを混合して、酸化セリウム系CMP研磨剤(固形分:1.0重量%)を6000g作製した。その研磨剤のpHは5.0であった。また、研磨剤中の粒子の平均粒径をレーザ回折式粒度分布計で測定するために、適当な濃度に希釈して測定した結果、実施例1〜6、比較例1〜4では、D50の値は170nmであり、比較例5ではD50の値は180nmであった。
浅素子分離(STI)絶縁膜CMP評価用試験ウエハのうち、パターンの形成されていないブランケットウエハとして、Si基板上にPE−TEOS酸化珪素膜(SiO2)が膜厚1000nm成膜されたウエハ(φ200mm)と、Si基板上に窒化珪素膜(Si3N4)が膜厚200nm成膜されたウエハ(φ200mm)を使用した。
実施例7〜実施例9、比較例6では、ポリカルボン酸の合成から行なった。
実施例1〜実施例6と同様の方法で行なった。
実施例7では、脱イオン水960gを3リットルの合成用フラスコに投入し、窒素ガス雰囲気下で撹拌しながら90℃に昇温後、アクリル酸547gと過硫酸アンモニウム54gを脱イオン水500gに溶解させたものを2時間かけてフラスコ中に注入した。その後90℃で5時間保温後、冷却して取り出しポリアクリル酸水溶液を得た。不揮発分を測定したところ、25重量%であった。
実施例7及び実施例8では、上記で得られたポリアクリル酸水溶液(25重量%)64.8gと脱イオン水4600gを混合し、アンモニア水(25重量%)にてpH4.8に調整し、最後に水溶液重量が4800gになるように脱イオン水を混合して添加液を得た。
実施例1〜実施例6と同様の方法で行なった。表3に得られた各測定結果を示す。
実施例10〜実施例11、比較例7〜8では、研磨剤のpHを変えて検討を行った。実施例12は、強酸塩を用いた検討を行った。実施例13及び比較例9では、ポリアクリル酸アンモニウム塩を用いて、強酸でpHを調整した検討を行った。
実施例1〜実施例6と同様の方法で行なった。
実施例10では、市販のポリアクリル酸水溶液(重量平均分子量5000)(40重量%)22.5gと脱イオン水4600gを混合し、セリアスラリ混合後の研磨剤6000g中の硫酸濃度が300ppmになるように硫酸(96重量%)を1.88g添加後、アンモニア水(25重量%)にてpH4.0に調整し、最後に水溶液重量が4800gになるように脱イオン水を混合した。
実施例10〜13及び比較例7〜9の添加液4800gと上記の酸化セリウムスラリ(固形分:5重量%)1200gを混合して、酸化セリウム系CMP研磨剤(固形分:1.0重量%)を6000g作製した。その研磨剤のpHは、それぞれ実施例10が4.2、実施例11が7.0、実施例12が5.0、実施例13が4.8、比較例7が3.9、比較例8が7.6、そして比較例9が4.8であった。また、研磨剤中の粒子の平均粒径をレーザ回折式粒度分布計で測定するために、適当な濃度に希釈して測定した結果、実施例10〜13では、D50の値は170nmであり、比較例7〜9では、D50の値は180nmであった。
実施例1〜実施例6では、ポリアクリル酸に加えて、強酸を含有することによって、強酸を含有しない比較例1に比べて、パターン研磨における凸部膜厚差が低減されている。実施例7〜実施例9では、硫酸が含有されたポリアクリル酸或いはポリアクリル−メタクリル酸を使用することによって、硫酸を含有しないポリアクリル酸を使用した比較例6に比べて、パターン研磨におけるパターン密度間の凸部膜厚差が低減されている。実施例10及び実施例11では、研磨剤のpHにあわせて、ポリアクリル酸及び硫酸の含有量を調整することにより、パターン研磨におけるパターン密度間の凸部膜厚差が低減されているが、研磨剤pHが低く4に近い領域、或いはpHが高く7.5に近い領域では、3ヶ月経過後の酸化セリウム粒子径が大きくなり、長時間保管後の分散安定性が若干悪くなる傾向も見られた。実施例12では、強酸塩を使用した場合にも、同様の効果が得られた。実施例13は、ポリアクリル酸として、あらかじめ中和されたアンモニウム塩を使用して、硝酸でpH調整した例であるが、研磨剤中の硝酸イオン濃度が本発明の範囲であり、同様の効果が得られた。
Claims (15)
- 層間絶縁膜、BPSG膜又はシャロートレンチ分離用絶縁膜を平坦化するために用いられるCMP研磨剤であって、
酸化セリウム粒子、分散剤、ポリカルボン酸、第1解離可能酸性基のpKa値が3.2以下である強酸および水を含有してなり、
pHが4.0以上7.5以下、研磨剤中の強酸濃度が300〜600ppmであり、
前記ポリカルボン酸の含有量が、CMP研磨剤100重量部に対して0.01重量部以上2重量部以下であり、前記ポリカルボン酸の重量平均分子量(GPCのPEG換算)が、500以上20,000以下であり、強酸が硫酸であることを特徴とするCMP研磨剤。 - 層間絶縁膜、BPSG膜又はシャロートレンチ分離用絶縁膜を平坦化するために用いられるCMP研磨剤であって、
酸化セリウム粒子、分散剤、ポリカルボン酸、第1解離可能酸性基のpKa値が3.2以下である強酸および水を含有してなり、
pHが4.0以上7.5以下、研磨剤中の強酸濃度が300〜600ppmであり、
前記ポリカルボン酸の含有量が、CMP研磨剤100重量部に対して0.01重量部以上2重量部以下であり、前記ポリカルボン酸の重量平均分子量(GPCのPEG換算)が、500以上20,000以下であり、強酸が二価の酸であることを特徴とするCMP研磨剤。 - 強酸の第1解離可能酸性基のpKa値が2.0以下である請求の範囲第2項記載のCMP研磨剤。
- 強酸の第1解離可能酸性基のpKa値が1.5以下である請求の範囲第2項記載のCMP研磨剤。
- pHが4.5以上5.5以下である請求の範囲第1項〜第4項のいずれか一項記載のCMP研磨剤。
- 前記ポリカルボン酸が、ポリアクリル酸である請求の範囲第1項〜第5項のいずれか一項に記載のCMP研磨剤。
- 前記分散剤が、アクリル酸アンモニウム塩を含む高分子化合物である請求の範囲第1項〜第6項のいずれか一項記載のCMP研磨剤。
- 前記研磨剤は、未中和のポリカルボン酸と強酸または強酸塩及び水を混合させた後に、アンモニアでpH調整されたものである請求の範囲第1項〜第7項のいずれか一項記載のCMP研磨剤。
- 前記酸化セリウム粒子の含有量が、CMP研磨剤100重量部に対して0.1重量部以上5重量部以下である請求の範囲第1項〜第8項のいずれか一項に記載のCMP研磨剤。
- 記酸化セリウム粒子の平均粒径が1nm以上400nm以下である請求の範囲第1項〜第9項のいずれか一項に記載のCMP研磨剤。
- 前記ポリカルボン酸が、カチオン性アゾ化合物およびその塩の少なくとも一方、またはアニオン性アゾ化合物およびその塩の少なくとも一方を重合開始剤として、不飽和二重結合を有するカルボン酸およびその塩の少なくとも一方を含む単量体が重合してなる重合体である請求の範囲第1項〜第10項のいずれか一項に記載のCMP研磨剤。
- 酸化セリウム粒子、分散剤、及び水からなる酸化セリウムスラリと、ポリカルボン酸、強酸、pH調整剤及び水を含む添加液とを混合することにより得られる請求の範囲第1項〜第11項のいずれか一項に記載のCMP研磨剤。
- 請求の範囲第1項〜第12項のいずれか一項記載のCMP研磨剤を製造する方法であって、未中和のポリカルボン酸と強酸または強酸塩及び水を混合させた水溶液を得る工程と、該工程の後に、前記水溶液をアンモニアでpH調整する工程とを有することを特徴とするCMP研磨剤の製造方法。
- 請求の範囲第1項〜第12項のいずれか一項に記載のCMP研磨剤を製造する方法であって、酸化セリウム粒子、分散剤、及び水からなる酸化セリウムスラリと、ポリカルボン酸、強酸、及び水を含む添加液とを混合することを特徴とするCMP研磨剤の製造方法。
- 被研磨膜を形成した基板を研磨定盤の研磨布に押しあて加圧し、請求の範囲第1項〜第12項のいずれか一項に記載のCMP研磨剤を被研磨膜と研磨布との間に供給しながら、基板と研磨定盤とを相対的に動かして被研磨膜を研磨することを特徴とする基板の研磨方法。
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Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006009160A1 (ja) | 2004-07-23 | 2006-01-26 | Hitachi Chemical Co., Ltd. | Cmp研磨剤及び基板の研磨方法 |
JP2007027663A (ja) * | 2005-07-21 | 2007-02-01 | Fujimi Inc | 研磨用組成物 |
US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
DE112007002470T5 (de) * | 2006-10-16 | 2009-09-10 | Cabot Microelectronics Corp., Aurora | Glaspoliermittel und -verfahren |
DE102006061891A1 (de) * | 2006-12-28 | 2008-07-03 | Basf Se | Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid |
JP5371207B2 (ja) * | 2007-06-08 | 2013-12-18 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
JP5327427B2 (ja) * | 2007-06-19 | 2013-10-30 | Jsr株式会社 | 化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法 |
US9548211B2 (en) | 2008-12-04 | 2017-01-17 | Cabot Microelectronics Corporation | Method to selectively polish silicon carbide films |
JP2012109287A (ja) * | 2009-03-13 | 2012-06-07 | Asahi Glass Co Ltd | 半導体用研磨剤、その製造方法及び研磨方法 |
JP2011142284A (ja) * | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Cmp研磨液、基板の研磨方法及び電子部品 |
WO2012032469A1 (en) | 2010-09-08 | 2012-03-15 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices |
EP2428541B1 (en) | 2010-09-08 | 2019-03-06 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
EP2614122A4 (en) * | 2010-09-08 | 2014-01-15 | Basf Se | AQUEOUS CLEANSING COMPOSITIONS WITH N-SUBSTITUTED DIAZENIUM DIOXIDE AND / OR N'-HYDROXY DIAZENIUM OXIDE SALTS |
JP2012121086A (ja) * | 2010-12-07 | 2012-06-28 | Yokkaichi Chem Co Ltd | 研磨用添加剤及び高分散性研磨スラリー |
CN108276915A (zh) | 2010-12-10 | 2018-07-13 | 巴斯夫欧洲公司 | 用于化学机械抛光包含氧化硅电介质和多晶硅膜的基底的含水抛光组合物和方法 |
SG190765A1 (en) * | 2010-12-24 | 2013-07-31 | Hitachi Chemical Co Ltd | Polishing liquid and method for polishing substrate using the polishing liquid |
US8808573B2 (en) * | 2011-04-15 | 2014-08-19 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
JP6035346B2 (ja) * | 2011-12-21 | 2016-11-30 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 半導体装置の製造方法及びcmp組成物の使用方法 |
US8916061B2 (en) * | 2012-03-14 | 2014-12-23 | Cabot Microelectronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
WO2013137220A1 (ja) * | 2012-03-14 | 2013-09-19 | 日立化成株式会社 | 研磨方法 |
CN102627915A (zh) * | 2012-03-23 | 2012-08-08 | 江苏中晶科技有限公司 | 高效氧化铝蓝宝石抛光液及其制备方法 |
JP5957292B2 (ja) | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
WO2014178426A1 (ja) * | 2013-05-02 | 2014-11-06 | 富士フイルム株式会社 | エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法 |
US9165489B2 (en) | 2013-05-21 | 2015-10-20 | Cabot Microelectronics Corporation | CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity |
US8906252B1 (en) | 2013-05-21 | 2014-12-09 | Cabot Microelelctronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
KR101470977B1 (ko) * | 2013-08-06 | 2014-12-09 | 주식회사 케이씨텍 | 슬러리 조성물 |
JP6428625B2 (ja) * | 2013-08-30 | 2018-11-28 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、及び、基体の研磨方法 |
CN105593330B (zh) * | 2013-09-30 | 2018-06-19 | 福吉米株式会社 | 研磨用组合物及其制造方法 |
US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
US9279067B2 (en) | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
CN104726028A (zh) * | 2013-12-18 | 2015-06-24 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其使用方法 |
CN110283572B (zh) | 2014-03-20 | 2021-08-24 | 福吉米株式会社 | 研磨用组合物、研磨方法及基板的制造方法 |
TWI530557B (zh) * | 2014-05-29 | 2016-04-21 | 卡博特微電子公司 | 具高移除速率及低缺陷率之對氧化物與多晶矽及氮化物具有選擇性的cmp組合物 |
US9299585B2 (en) * | 2014-07-28 | 2016-03-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing substrates containing ruthenium and copper |
JP2016056292A (ja) * | 2014-09-10 | 2016-04-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びその製造方法、研磨方法、並びに基板及びその製造方法 |
JP5893700B1 (ja) * | 2014-09-26 | 2016-03-23 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
US9593261B2 (en) | 2015-02-04 | 2017-03-14 | Asahi Glass Company, Limited | Polishing agent, polishing method, and liquid additive for polishing |
JP6572734B2 (ja) * | 2015-02-04 | 2019-09-11 | Agc株式会社 | 研磨剤と研磨方法、および研磨用添加液 |
CN104987839A (zh) * | 2015-06-30 | 2015-10-21 | 安徽德诺化工有限公司 | Led用蓝宝石衬底研磨液 |
US10421890B2 (en) * | 2016-03-31 | 2019-09-24 | Versum Materials Us, Llc | Composite particles, method of refining and use thereof |
CN110291619A (zh) * | 2017-02-08 | 2019-09-27 | 日立化成株式会社 | 研磨液和研磨方法 |
JP7452782B2 (ja) | 2017-03-24 | 2024-03-19 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 表面処理方法およびそのための組成物 |
KR102475282B1 (ko) * | 2017-03-29 | 2022-12-07 | 삼성전자주식회사 | 화학적 기계적 연마용 슬러리 조성물 |
US11649377B2 (en) | 2017-08-14 | 2023-05-16 | Resonac Corporation | Polishing liquid, polishing liquid set and polishing method |
KR102634300B1 (ko) * | 2017-11-30 | 2024-02-07 | 솔브레인 주식회사 | 연마용 슬러리 조성물 및 고단차 반도체 박막의 연마 방법 |
JP7384332B2 (ja) | 2018-01-05 | 2023-11-21 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 表面処理組成物及び表面処理方法 |
CN111684575B (zh) * | 2018-02-05 | 2023-09-29 | 富士胶片株式会社 | 药液、药液的制造方法、基板的处理方法 |
CN112964534B (zh) * | 2021-03-19 | 2022-09-09 | 中铁工程装备集团有限公司 | 一种GCr18Mo晶粒度测定的浸蚀剂、方法及应用 |
CN116200128A (zh) * | 2021-11-30 | 2023-06-02 | 安集微电子(上海)有限公司 | 一种制备氧化铈纳米复合物的方法、一种氧化铈纳米复合物及一种化学机械抛光液 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1180708A (ja) * | 1997-09-09 | 1999-03-26 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
JP2000323444A (ja) * | 1999-05-10 | 2000-11-24 | Kao Corp | 研磨液組成物 |
JP2001185516A (ja) * | 1999-12-24 | 2001-07-06 | Kao Corp | 研磨助剤 |
WO2004010487A1 (ja) * | 2002-07-22 | 2004-01-29 | Seimi Chemical Co., Ltd. | 半導体用研磨剤、その製造方法及び研磨方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3278532B2 (ja) * | 1994-07-08 | 2002-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
JPH10106994A (ja) * | 1997-01-28 | 1998-04-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
EP1566421B1 (en) * | 1998-12-25 | 2014-12-10 | Hitachi Chemical Company, Ltd. | CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate. |
EP1691401B1 (en) * | 1999-06-18 | 2012-06-13 | Hitachi Chemical Co., Ltd. | Method for polishing a substrate using CMP abrasive |
JP5017574B2 (ja) * | 2001-05-25 | 2012-09-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | 酸化セリウム研磨剤及び基板の製造方法 |
TWI256971B (en) * | 2002-08-09 | 2006-06-21 | Hitachi Chemical Co Ltd | CMP abrasive and method for polishing substrate |
JP3974127B2 (ja) * | 2003-09-12 | 2007-09-12 | 株式会社東芝 | 半導体装置の製造方法 |
US20050277262A1 (en) * | 2004-06-14 | 2005-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing isolation structures in a semiconductor device |
US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
-
2005
- 2005-09-25 US US11/576,010 patent/US20070218811A1/en not_active Abandoned
- 2005-09-27 CN CN2005800317627A patent/CN101023512B/zh active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1180708A (ja) * | 1997-09-09 | 1999-03-26 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
JP2000323444A (ja) * | 1999-05-10 | 2000-11-24 | Kao Corp | 研磨液組成物 |
JP2001185516A (ja) * | 1999-12-24 | 2001-07-06 | Kao Corp | 研磨助剤 |
WO2004010487A1 (ja) * | 2002-07-22 | 2004-01-29 | Seimi Chemical Co., Ltd. | 半導体用研磨剤、その製造方法及び研磨方法 |
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KR20070044065A (ko) | 2007-04-26 |
TWI286568B (en) | 2007-09-11 |
JP2011181946A (ja) | 2011-09-15 |
CN101023512B (zh) | 2010-11-24 |
JPWO2006035771A1 (ja) | 2008-05-15 |
KR100849551B1 (ko) | 2008-07-31 |
US20070218811A1 (en) | 2007-09-20 |
WO2006035771A1 (ja) | 2006-04-06 |
CN101023512A (zh) | 2007-08-22 |
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