WO2006035771A1 - Cmp研磨剤及び基板の研磨方法 - Google Patents
Cmp研磨剤及び基板の研磨方法 Download PDFInfo
- Publication number
- WO2006035771A1 WO2006035771A1 PCT/JP2005/017747 JP2005017747W WO2006035771A1 WO 2006035771 A1 WO2006035771 A1 WO 2006035771A1 JP 2005017747 W JP2005017747 W JP 2005017747W WO 2006035771 A1 WO2006035771 A1 WO 2006035771A1
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- WO
- WIPO (PCT)
- Prior art keywords
- acid
- cmp
- polishing
- abrasive
- strong acid
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 163
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 title claims description 37
- 239000002253 acid Substances 0.000 claims abstract description 198
- 239000002245 particle Substances 0.000 claims abstract description 85
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 84
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 55
- 229920002125 Sokalan® Polymers 0.000 claims abstract description 54
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000004584 polyacrylic acid Substances 0.000 claims abstract description 54
- 239000002270 dispersing agent Substances 0.000 claims abstract description 44
- 230000002378 acidificating effect Effects 0.000 claims abstract description 18
- 239000002002 slurry Substances 0.000 claims description 71
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 60
- 239000007864 aqueous solution Substances 0.000 claims description 47
- 238000002156 mixing Methods 0.000 claims description 34
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 30
- 239000000243 solution Substances 0.000 claims description 26
- 229910052684 Cerium Inorganic materials 0.000 claims description 25
- -1 cationic azo compound Chemical class 0.000 claims description 23
- 239000003082 abrasive agent Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 150000003839 salts Chemical class 0.000 claims description 20
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000654 additive Substances 0.000 claims description 15
- 229920000642 polymer Polymers 0.000 claims description 15
- 230000000996 additive effect Effects 0.000 claims description 14
- 239000004744 fabric Substances 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 7
- 239000000178 monomer Substances 0.000 claims description 7
- 239000003002 pH adjusting agent Substances 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- WPKYZIPODULRBM-UHFFFAOYSA-N azane;prop-2-enoic acid Chemical compound N.OC(=O)C=C WPKYZIPODULRBM-UHFFFAOYSA-N 0.000 claims description 5
- 239000003505 polymerization initiator Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000000379 polymerizing effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- JWHOQZUREKYPBY-UHFFFAOYSA-N rubonic acid Natural products CC1(C)CCC2(CCC3(C)C(=CCC4C5(C)CCC(=O)C(C)(C)C5CC(=O)C34C)C2C1)C(=O)O JWHOQZUREKYPBY-UHFFFAOYSA-N 0.000 claims description 2
- 150000001735 carboxylic acids Chemical class 0.000 claims 1
- 239000011229 interlayer Substances 0.000 abstract description 6
- 239000005380 borophosphosilicate glass Substances 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 4
- 238000000926 separation method Methods 0.000 abstract description 4
- 238000007517 polishing process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 118
- 230000000052 comparative effect Effects 0.000 description 55
- 239000008367 deionised water Substances 0.000 description 52
- 229910021641 deionized water Inorganic materials 0.000 description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 32
- 229910052814 silicon oxide Inorganic materials 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 25
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 21
- 235000011114 ammonium hydroxide Nutrition 0.000 description 21
- 239000010410 layer Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 15
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 15
- 239000006185 dispersion Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 14
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 13
- 238000002955 isolation Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
- 229920001223 polyethylene glycol Polymers 0.000 description 12
- 239000006228 supernatant Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000002202 Polyethylene glycol Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 150000003863 ammonium salts Chemical class 0.000 description 9
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 8
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 8
- 238000006386 neutralization reaction Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229910017604 nitric acid Inorganic materials 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 229920003169 water-soluble polymer Polymers 0.000 description 7
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 6
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 6
- 238000010494 dissociation reaction Methods 0.000 description 6
- 230000005593 dissociations Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 238000001962 electrophoresis Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- 238000011088 calibration curve Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 4
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000010298 pulverizing process Methods 0.000 description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 3
- 125000000129 anionic group Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000005251 capillar electrophoresis Methods 0.000 description 3
- 125000002091 cationic group Chemical group 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229920005575 poly(amic acid) Polymers 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- QQVDJLLNRSOCEL-UHFFFAOYSA-N (2-aminoethyl)phosphonic acid Chemical compound [NH3+]CCP(O)([O-])=O QQVDJLLNRSOCEL-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- CKJGHMBEIUJCRA-UHFFFAOYSA-N 2-propan-2-yl-4,5-dihydro-1h-imidazole;sulfo hydrogen sulfate;dihydrate Chemical compound O.O.CC(C)C1=NCCN1.OS(=O)(=O)OS(O)(=O)=O CKJGHMBEIUJCRA-UHFFFAOYSA-N 0.000 description 2
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- NYHBQMYGNKIUIF-UUOKFMHZSA-N Guanosine Chemical compound C1=NC=2C(=O)NC(N)=NC=2N1[C@@H]1O[C@H](CO)[C@@H](O)[C@H]1O NYHBQMYGNKIUIF-UUOKFMHZSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 2
- 235000011130 ammonium sulphate Nutrition 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- MLIREBYILWEBDM-UHFFFAOYSA-N cyanoacetic acid Chemical compound OC(=O)CC#N MLIREBYILWEBDM-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- QEWYKACRFQMRMB-UHFFFAOYSA-N fluoroacetic acid Chemical compound OC(=O)CF QEWYKACRFQMRMB-UHFFFAOYSA-N 0.000 description 2
- 239000001530 fumaric acid Substances 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- FDGQSTZJBFJUBT-UHFFFAOYSA-N hypoxanthine Chemical compound O=C1NC=NC2=C1NC=N2 FDGQSTZJBFJUBT-UHFFFAOYSA-N 0.000 description 2
- TWBYWOBDOCUKOW-UHFFFAOYSA-N isonicotinic acid Chemical compound OC(=O)C1=CC=NC=C1 TWBYWOBDOCUKOW-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QYZFTMMPKCOTAN-UHFFFAOYSA-N n-[2-(2-hydroxyethylamino)ethyl]-2-[[1-[2-(2-hydroxyethylamino)ethylamino]-2-methyl-1-oxopropan-2-yl]diazenyl]-2-methylpropanamide Chemical compound OCCNCCNC(=O)C(C)(C)N=NC(C)(C)C(=O)NCCNCCO QYZFTMMPKCOTAN-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000010979 pH adjustment Methods 0.000 description 2
- 239000006174 pH buffer Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- LCPDWSOZIOUXRV-UHFFFAOYSA-N phenoxyacetic acid Chemical compound OC(=O)COC1=CC=CC=C1 LCPDWSOZIOUXRV-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 2
- OXNIZHLAWKMVMX-UHFFFAOYSA-N picric acid Chemical compound OC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-N 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000001384 succinic acid Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Chemical compound OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- RZRILSWMGXWSJY-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]ethanol;sulfuric acid Chemical compound OS(O)(=O)=O.OCCN(CCO)CCO RZRILSWMGXWSJY-UHFFFAOYSA-N 0.000 description 1
- HVYJSOSGTDINLW-UHFFFAOYSA-N 2-[dimethyl(octadecyl)azaniumyl]acetate Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)CC([O-])=O HVYJSOSGTDINLW-UHFFFAOYSA-N 0.000 description 1
- MUHFRORXWCGZGE-KTKRTIGZSA-N 2-hydroxyethyl (z)-octadec-9-enoate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCCO MUHFRORXWCGZGE-KTKRTIGZSA-N 0.000 description 1
- RFVNOJDQRGSOEL-UHFFFAOYSA-N 2-hydroxyethyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCO RFVNOJDQRGSOEL-UHFFFAOYSA-N 0.000 description 1
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical group C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229920001817 Agar Polymers 0.000 description 1
- GEHMBYLTCISYNY-UHFFFAOYSA-N Ammonium sulfamate Chemical compound [NH4+].NS([O-])(=O)=O GEHMBYLTCISYNY-UHFFFAOYSA-N 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- 235000013162 Cocos nucifera Nutrition 0.000 description 1
- 244000060011 Cocos nucifera Species 0.000 description 1
- MIKUYHXYGGJMLM-GIMIYPNGSA-N Crotonoside Natural products C1=NC2=C(N)NC(=O)N=C2N1[C@H]1O[C@@H](CO)[C@H](O)[C@@H]1O MIKUYHXYGGJMLM-GIMIYPNGSA-N 0.000 description 1
- 239000001879 Curdlan Substances 0.000 description 1
- 229920002558 Curdlan Polymers 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- NYHBQMYGNKIUIF-UHFFFAOYSA-N D-guanosine Natural products C1=2NC(N)=NC(=O)C=2N=CN1C1OC(CO)C(O)C1O NYHBQMYGNKIUIF-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- PQUCIEFHOVEZAU-UHFFFAOYSA-N Diammonium sulfite Chemical compound [NH4+].[NH4+].[O-]S([O-])=O PQUCIEFHOVEZAU-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- FPVVYTCTZKCSOJ-UHFFFAOYSA-N Ethylene glycol distearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCCCCCCCC FPVVYTCTZKCSOJ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- UGQMRVRMYYASKQ-UHFFFAOYSA-N Hypoxanthine nucleoside Natural products OC1C(O)C(CO)OC1N1C(NC=NC2=O)=C2N=C1 UGQMRVRMYYASKQ-UHFFFAOYSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- RHGKLRLOHDJJDR-BYPYZUCNSA-N L-citrulline Chemical compound NC(=O)NCCC[C@H]([NH3+])C([O-])=O RHGKLRLOHDJJDR-BYPYZUCNSA-N 0.000 description 1
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 description 1
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- 241000403354 Microplus Species 0.000 description 1
- RHGKLRLOHDJJDR-UHFFFAOYSA-N Ndelta-carbamoyl-DL-ornithine Natural products OC(=O)C(N)CCCNC(N)=O RHGKLRLOHDJJDR-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 229920000805 Polyaspartic acid Polymers 0.000 description 1
- 108010020346 Polyglutamic Acid Proteins 0.000 description 1
- 108010039918 Polylysine Proteins 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- 229920001214 Polysorbate 60 Polymers 0.000 description 1
- 239000004373 Pullulan Substances 0.000 description 1
- 229920001218 Pullulan Polymers 0.000 description 1
- 108010077895 Sarcosine Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000004147 Sorbitan trioleate Substances 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- 239000008272 agar Substances 0.000 description 1
- 235000010419 agar Nutrition 0.000 description 1
- 235000010443 alginic acid Nutrition 0.000 description 1
- 239000000783 alginic acid Substances 0.000 description 1
- 229920000615 alginic acid Polymers 0.000 description 1
- 229960001126 alginic acid Drugs 0.000 description 1
- 150000004781 alginic acids Chemical class 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229960004050 aminobenzoic acid Drugs 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- CAMXVZOXBADHNJ-UHFFFAOYSA-N ammonium nitrite Chemical compound [NH4+].[O-]N=O CAMXVZOXBADHNJ-UHFFFAOYSA-N 0.000 description 1
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 description 1
- 239000003098 androgen Substances 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- LWMFAFLIWMPZSX-UHFFFAOYSA-N bis[2-(4,5-dihydro-1h-imidazol-2-yl)propan-2-yl]diazene Chemical compound N=1CCNC=1C(C)(C)N=NC(C)(C)C1=NCCN1 LWMFAFLIWMPZSX-UHFFFAOYSA-N 0.000 description 1
- JKRBKUNNPGKVLF-UHFFFAOYSA-N bis[2-(4,5-dihydro-1h-imidazol-2-yl)propan-2-yl]diazene;sulfo hydrogen sulfate;dihydrate Chemical compound O.O.OS(=O)(=O)OS(O)(=O)=O.N=1CCNC=1C(C)(C)N=NC(C)(C)C1=NCCN1 JKRBKUNNPGKVLF-UHFFFAOYSA-N 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 150000001785 cerium compounds Chemical class 0.000 description 1
- KHSBAWXKALEJFR-UHFFFAOYSA-H cerium(3+);tricarbonate;hydrate Chemical compound O.[Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O KHSBAWXKALEJFR-UHFFFAOYSA-H 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 229940077239 chlorous acid Drugs 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 235000013477 citrulline Nutrition 0.000 description 1
- 229960002173 citrulline Drugs 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 235000019316 curdlan Nutrition 0.000 description 1
- 229940078035 curdlan Drugs 0.000 description 1
- 229960001270 d- tartaric acid Drugs 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229960005215 dichloroacetic acid Drugs 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- JZKFHQMONDVVNF-UHFFFAOYSA-N dodecyl sulfate;tris(2-hydroxyethyl)azanium Chemical compound OCCN(CCO)CCO.CCCCCCCCCCCCOS(O)(=O)=O JZKFHQMONDVVNF-UHFFFAOYSA-N 0.000 description 1
- SYELZBGXAIXKHU-UHFFFAOYSA-N dodecyldimethylamine N-oxide Chemical compound CCCCCCCCCCCC[N+](C)(C)[O-] SYELZBGXAIXKHU-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N ethyl formate Chemical compound CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 229940100608 glycol distearate Drugs 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 229940029575 guanosine Drugs 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229940071870 hydroiodic acid Drugs 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- 229940094506 lauryl betaine Drugs 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- DVEKCXOJTLDBFE-UHFFFAOYSA-N n-dodecyl-n,n-dimethylglycinate Chemical compound CCCCCCCCCCCC[N+](C)(C)CC([O-])=O DVEKCXOJTLDBFE-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229960003512 nicotinic acid Drugs 0.000 description 1
- 235000001968 nicotinic acid Nutrition 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- UPHWVVKYDQHTCF-UHFFFAOYSA-N octadecylazanium;acetate Chemical compound CC(O)=O.CCCCCCCCCCCCCCCCCCN UPHWVVKYDQHTCF-UHFFFAOYSA-N 0.000 description 1
- ZPIRTVJRHUMMOI-UHFFFAOYSA-N octoxybenzene Chemical compound CCCCCCCCOC1=CC=CC=C1 ZPIRTVJRHUMMOI-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 229920003175 pectinic acid Polymers 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 108010064470 polyaspartate Proteins 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920002643 polyglutamic acid Polymers 0.000 description 1
- 229920000656 polylysine Polymers 0.000 description 1
- 229920001444 polymaleic acid Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 description 1
- 239000000244 polyoxyethylene sorbitan monooleate Substances 0.000 description 1
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 description 1
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010988 polyoxyethylene sorbitan tristearate Nutrition 0.000 description 1
- 239000001816 polyoxyethylene sorbitan tristearate Substances 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 150000004804 polysaccharides Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920000053 polysorbate 80 Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 235000020004 porter Nutrition 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229940043230 sarcosine Drugs 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- CBXWGGFGZDVPNV-UHFFFAOYSA-N so4-so4 Chemical compound OS(O)(=O)=O.OS(O)(=O)=O CBXWGGFGZDVPNV-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- QPILZZVXGUNELN-UHFFFAOYSA-M sodium;4-amino-5-hydroxynaphthalene-2,7-disulfonate;hydron Chemical compound [Na+].OS(=O)(=O)C1=CC(O)=C2C(N)=CC(S([O-])(=O)=O)=CC2=C1 QPILZZVXGUNELN-UHFFFAOYSA-M 0.000 description 1
- 235000019337 sorbitan trioleate Nutrition 0.000 description 1
- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-N sulfonic acid Chemical compound OS(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-N 0.000 description 1
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- UNXRWKVEANCORM-UHFFFAOYSA-N triphosphoric acid Chemical compound OP(O)(=O)OP(O)(=O)OP(O)(O)=O UNXRWKVEANCORM-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Definitions
- the present invention relates to a planarization process of a substrate surface, which is a technique for manufacturing a semiconductor device, in particular, an interlayer insulation film, a flattening process of a BPSG (boron, phosphorus-doped silicon dioxide-silicon film) film, a shallow trench
- the present invention relates to a CMP abrasive used in a step of forming a hose separation and a method for polishing a substrate using the CMP abrasive.
- an inorganic insulating film layer such as a silicon oxide insulating film is formed by a method such as plasma CVD or low pressure CVD.
- a fumed silica-based abrasive As a slurry-like chemical mechanical abrasive for flattening the inorganic insulating film layer, a fumed silica-based abrasive has been generally studied. Fumed silica-based abrasives are manufactured by adjusting the pH by growing grains by methods such as thermal decomposition of silicon tetrachloride. However, such an abrasive has a technical problem that the polishing rate is low.
- shallow trench isolation is used for element isolation in an integrated circuit.
- CMP is used to remove the excess silicon oxide film formed on the substrate, and a low-polishing stock film is formed under the silicon oxide film to stop polishing. Is done.
- Silicon nitride or the like is used for the stubber film, and it is desirable that the polishing rate ratio between the silicon oxide film and the staggered film is large.
- Conventional colloidal silica-based abrasives have the strength to withstand practical use for shallow trench isolation where the polishing rate ratio between the silicon oxide film and the staggered film is as small as about 3.
- cerium oxide-based abrasives are used as glass surface abrasives for photomasks and lenses. It is used. Oxidized cerium particles have lower hardness than silica particles and alumina particles, and therefore are less likely to scratch the polished surface, and are useful for finish mirror polishing. In addition, there is an advantage that the polishing rate is faster than the silica abrasive.
- CMP abrasives for semiconductors using high-purity cerium oxide abrasive grains have been used. For example, this technique is disclosed in Japanese Patent Laid-Open No. 10-106994.
- the abrasive using cerium oxide as described above has a problem that the particle diameter of the abrasive grains changes and a film thickness difference due to a difference in turn density tends to occur.
- the area where the area density of the convex part (active part) where the base such as STI is coated with silicon nitride is small is higher than the area where the area density is large, so the polishing is performed first. Easy to progress. As a result, the remaining film thickness of the silicon nitride in the low-density part eventually becomes smaller (thickness loss increases), which causes a problem that the film thickness difference due to the pattern density difference tends to increase.
- a silicon oxide film or the like is formed at high speed with a small difference in film thickness due to a difference in turn density. It is another object of the present invention to provide an abrasive and a polishing method that can be easily and easily managed.
- the present invention is (1) a polishing agent containing acid cerium particles, a dispersant, a polycarboxylic acid, a strong acid having a pKa value of 3.2 or less of the first dissociable acidic group, and water.
- the present invention relates to a CMP polishing slurry characterized by having a pH of 4.0 to 7.5 and a strong acid concentration in the polishing slurry of 100 to 1000 ppm.
- the present invention is (2) an abrasive containing a strong acid in which the pKa value of the acid cerium particles, the dispersant, the polycarboxylic acid, and the first dissociable acidic group is 3.2 or less, and water.
- the present invention relates to a CMP polishing slurry characterized by having a pH of 4.0 to 7.5 and a strong acid concentration in the polishing slurry of 50 to LOOOppm.
- the present invention is (3) an abrasive containing a strong acid in which the pKa value of the acid cerium particles, the dispersant, the polycarboxylic acid, and the first dissociable acidic group is 3.2 or less, and water.
- the present invention relates to a CMP abrasive, characterized in that the pH is 4.0 or more and 7.5 or less, and the strong acid in the abrasive is a monovalent strong acid with a concentration of 50 to 500 ppm.
- the present invention is (4) a polishing agent containing acid cerium particles, a dispersant, a polycarboxylic acid, a strong acid having a pKa value of 3.2 or less of the first dissociable acidic group, and water.
- the present invention relates to a CMP polishing slurry characterized in that the pH is 4.0 or more and 7.5 or less, and the strong acid in the polishing slurry is a divalent strong acid with a concentration of 100 to LOOOppm.
- the present invention relates to (5) the CMP polishing slurry according to the above (1) or (4), wherein the strong acid concentration in the polishing slurry is 200 to: LOOOppm.
- the present invention relates to (6) the CMP polishing slurry according to (1) or (4) above, wherein the strong acid concentration in the polishing slurry is 300 to 600 ppm.
- the present invention relates to (7) the CMP abrasive according to (1) or (4) above, wherein the strong acid is sulfuric acid.
- the present invention relates to (8) the CMP polishing slurry according to (2) or (3) above, wherein the strong acid concentration in the polishing slurry is 100 to 500 ppm.
- the present invention relates to (9) the CMP polishing slurry according to (2) or (3) above, wherein the strong acid concentration in the polishing slurry is 150 to 300 ppm.
- the first dissociable acidic group of the strong acid has a pKa value of 2.0 or less.
- the present invention relates to (11) the CMP polishing slurry according to (10), wherein the pKa value of the first dissociable acidic group of the strong acid is 1.5 or less.
- the present invention relates to (12) the CMP polishing slurry according to any one of (1) to (11), wherein the pH is 4.5 or more and 5.5 or less.
- the present invention relates to (13) the CMP abrasive according to any one of (1) to (12), wherein the polycarboxylic acid power is polyacrylic acid.
- the present invention relates to (14) the CMP abrasive according to any one of (1) to (13), wherein the dispersant is a polymer compound containing an ammonium acrylate salt.
- the present invention provides (15) the above-mentioned (1) to (14), wherein the abrasive power is mixed with an unneutralized polycarboxylic acid, a strong acid or a strong acid salt and water and then adjusted with ammonia. ) The CMP abrasive
- the content of the cerium oxide particles is 0.1 parts by weight or more and 5 parts by weight or less with respect to 100 parts by weight of the CMP abrasive. As described in any one
- the present invention relates to any one of (1) to (16), wherein (17) the content of polycarboxylic acid is 0.01 parts by weight or more and 2 parts by weight or less with respect to 100 parts by weight of the CMP abrasive. As described in
- the present invention is as described in any one of (1) to (17), wherein (18) the polycarboxylic acid has a weight average molecular weight (GPC PEG conversion) of 500 or more and 20,000 or less. Regarding CMP abrasives.
- GPC PEG conversion weight average molecular weight
- the present invention relates to (19) the CMP abrasive according to any one of (1) to (18), wherein an average particle diameter of the cerium oxycerium particles is from 1 nm to 400 nm.
- the present invention relates to (20) a polymerization initiator for at least one of the polycarboxylic acid-powered cationic azo compound and a salt thereof, or at least one of a ionic azo compound and a salt thereof.
- the CMP according to any one of (1) to (19), wherein the CMP is a polymer obtained by polymerizing a monomer containing at least one of a carboxylic acid having an unsaturated double bond and a salt thereof. It relates to an abrasive.
- the present invention comprises (21) mixing cerium oxide particles, a dispersant, and an acid cerium slurry that also has hydraulic power, and an additive solution containing polycarboxylic acid, strong acid, pH adjuster, and water.
- polishing agent as described in any one of said (1)-(20) obtained by these.
- the present invention provides (22) a method for producing a CMP polishing slurry according to any one of (1) to (21) above, comprising an unneutralized polycarboxylic acid and a strong acid or strong acid salt and water. And a step of adjusting the pH of the aqueous solution with ammonia after the step, and a method for producing a CMP abrasive, characterized by comprising:
- the present invention is (23) a method for producing a CMP abrasive slurry according to any one of (1) to (21) above, wherein the oxidation comprises cerium oxide particles, a dispersant, and water. Cerium slurry and po
- the present invention relates to a method for producing a CMP polishing slurry, which comprises mixing a recarboxylic acid, a strong acid, and an additive solution containing water.
- the present invention provides (24) a substrate on which a film to be polished is formed, pressed against a polishing cloth of a polishing surface plate and pressurized, and the CMP abrasive according to any one of (1) to (21) is used.
- the present invention relates to a method for polishing a substrate, characterized by polishing a film to be polished by relatively powering a substrate and a polishing surface plate while supplying the film between the film to be polished and a polishing cloth.
- the film thickness difference due to the difference in turn density is reduced, and the process management is also performed at high speed. It is possible to provide an abrasive and a polishing method capable of easily polishing an oxide silicon film and the like.
- cerium oxide is obtained by oxidizing a cerium compound of carbonate, nitrate, sulfate, or oxalate.
- TEOS Cerium oxide abrasives used for polishing silicon oxide films formed by CVD, etc., are faster when the crystallite size of the particles is larger and the crystal distortion is smaller, that is, the better the crystallinity is.
- the crystallite diameter of the cerium oxide is preferably 1 nm or more and 300 nm or less.
- the content of alkali metal, nitrogen, and rogen be suppressed to 10 ppm or less in the cerium oxide particles.
- the firing temperature is preferably 350 ° C or higher and 900 ° C or lower.
- the cerium oxide particles produced by the above method are agglomerated, it is preferably mechanically pulverized.
- a dry pulverization method such as a jet mill or a wet pulverization method such as a planetary bead mill is preferable.
- the jet mill is described in, for example, “Chemical Engineering Papers” Vol. 6 No. 5 (1980) pp. 527-532.
- a homogenizer, an ultrasonic disperser, a wet ball mill, or the like is used in addition to a dispersion treatment using a normal stirrer. it can.
- the cerium oxide dispersion is allowed to stand for a long time to precipitate large particles, and the supernatant is pumped out by pumping.
- a classification method is used.
- a method using a high-pressure homogenizer that collides the oxycerium particles in the dispersion medium at a pressure of 90 MPa or more is also used.
- the average particle size of the cerium oxide particles thus produced is preferably 1 to 400 nm in the CMP abrasive. More preferably, it is l-300 nm, More preferably, it is l-200 nm. This is because if the average particle size of the cerium oxide particles is less than 1 nm, the polishing rate tends to be low, and if it exceeds 400 nm, the polishing film tends to be easily damaged.
- the average particle diameter of the cerium oxide particles refers to the value of D50 (median diameter of volume distribution, cumulative median value) measured with a laser diffraction particle size distribution meter.
- the CMP abrasive according to the present invention includes, for example, an acid / cerium particle (A) having the above characteristics, a dispersant (B), and water (C) to disperse the particles. It can be obtained by adding (D) and a strong acid (E) described later.
- the concentration of the cerium oxide particles is preferably in the range of 0.1 to 5 parts by weight with respect to 100 parts by weight of the abrasive. More preferably, it is 0.2 parts by weight or more and 3 parts by weight or less. This is because if the concentration is too low, the polishing rate tends to be low, and if it is too high, it tends to aggregate.
- Examples of the (B) dispersant include a water-soluble anionic dispersant, a water-soluble nonionic dispersant, a water-soluble cationic dispersant, a water-soluble amphoteric dispersant, and the like.
- a dispersant which is a polymer compound containing an acrylic acid ammonium salt is preferred. Examples thereof include polyacrylic acid ammonium and copolymers of acrylic acid amide and acrylic acid ammonium.
- Two or more kinds of dispersants including at least one selected from an agent and a water-soluble amphoteric dispersant may be used in combination.
- the content of alkali metals such as sodium ions and force ions in the dispersant is preferably suppressed to 10 ppm or less.
- water-soluble anionic dispersant examples include lauryl sulfate triethanolamine, lauryl sulfate ammonium, polyoxyethylene alkyl ether sulfate triethanolamine, polycarboxylic acid type polymer dispersant, and the like. Is mentioned.
- Examples of the polycarboxylic acid type polymer dispersant include a polymer of a carboxylic acid monomer having an unsaturated double bond such as acrylic acid, methacrylic acid, maleic acid, fumaric acid, and itaconic acid, Examples thereof include a copolymer of a carboxylic acid monomer having an unsaturated double bond and another monomer having an unsaturated double bond, and their ammonium salts and amine salts.
- water-soluble nonionic dispersant examples include polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene stearyl ether, polyoxyethylene glycol ether, polyoxyethylene higher alcohol ether, polyoxyethylene.
- Examples of the water-soluble cationic dispersant include polyvinylpyrrolidone, coconut amine acetate, stearylamine acetate, and the like.
- Examples of the water-soluble amphoteric dispersant include lauryl betaine, stearyl betaine. , Lauryldimethylamine oxide, 2-anolequinole-N-canoleboxoxymethinole-N-hydroxyethylimidazolium umbetaine, and the like.
- the amount of these dispersants added is determined by the dispersibility of particles in the abrasive and the prevention of settling, and further, the scratch
- the relationship between the amount of the dispersant and the added amount of the dispersant is preferably in the range of 0.01 to 10 parts by weight with respect to 100 parts by weight of the cerium oxide particles.
- the weight average molecular weight of the dispersant is preferably from 100 to 50,000, more preferably from 1,000 to 10,000.
- the weight average molecular weight of the dispersant is less than 100, it may be difficult to obtain a sufficient polishing rate when polishing the silicon oxide film or the silicon nitride film, and the weight average molecular weight of the dispersant is 50, If it exceeds 000, the viscosity increases, and the storage stability of the CMP abrasive may decrease.
- the CMP abrasive in the present invention can improve the planarization characteristics.
- the silicon oxide film which is the main film to be polished, has an effect of suppressing the polishing rate of the silicon nitride film, which is the staggered film, process management becomes easier.
- the polycarboxylic acid may have a function as a dispersant. Examples of the polycarboxylic acid include polyacrylic acid, polymethacrylic acid, polystyrene carboxylic acid, and copolymers thereof.
- the polycarboxylic acid includes a copolymer of a carboxylic acid and other copolymerizable monomers such as a copolymer of acrylic acid and methyl acrylate. In that case, the copolymerization ratio of carboxylic acid is preferably 50% by weight or more.
- the polycarboxylic acid is a carboxylic acid having an unsaturated double bond using at least one of a cationic azo compound and a salt thereof, or at least one of a cation azo compound and a salt thereof as a polymerization initiator. And a polymer obtained by polymerizing a monomer containing at least one of the salt thereof. Examples of the polymerization initiator include 2, 2'-azobis [2- (2-imidazolin-2-yl) propane] disulfate dihydrate, 2, 2'-azobis [2- (2-imidazoline- 2-yl) propane] and the like.
- the method for synthesizing the polycarboxylic acid used in the present invention is not limited.
- a weight average molecular weight of 500 to 20,000 in terms of GPC PEG is preferable. More preferably, the weight average molecular weight is 1,000 or more and 20,000 or less, and particularly preferably 2,000 or more and 10,000 or less. If the molecular weight is too low, the flatness effect may be insufficient. If the molecular weight is too high, the cerium oxide particles may be easily aggregated, or the polishing rate of the pattern protrusions may be reduced. Because there is.
- the polycarboxylic acid content is preferably in the range of 0.01 to 2 parts by weight with respect to 100 parts by weight of the CMP abrasive. More preferably 0.1. The amount is 1 part by weight or more. If the content is too small, it is difficult to obtain high planarization characteristics. If the content is too large, the polishing rate of the pattern protrusions will be greatly reduced, and the dispersion stability of the cerium oxide particles tends to be lowered.
- the CMP abrasive according to the present invention contains a strong acid (E) having a p Ka value of 3.2 or less of the first dissociable acidic group in addition to the polycarboxylic acid, thereby improving the flatness characteristics.
- E strong acid
- the film thickness difference due to the pattern density difference can be reduced. That is, it is possible to reduce the thickness of the silicon nitride film at the portion where the area density of the convex portion (active portion) whose base such as STI is coated with silicon nitride is small.
- the strong acid means that the pKa value (pK) of the first dissociable acidic group is 3.2 or less.
- the strong acid the lower the pKa value of the first dissociable acidic group, the higher the effect of the present invention, and the pKa value of the acid having the pKa value of the first dissociable acidic group of 2.0 or less is more preferable. Most preferred is an acid having a ⁇ 1.5. If the pKa value of the first dissociable acidic group is greater than 3.2, sufficient effects cannot be obtained.
- the strong acid used in the present invention is contained in a polycarboxylic acid which may be added separately from the polycarboxylic acid which is not limited to the method of addition to the abrasive.
- the pK value is 4 to 5 (acrylic acid is 4.
- the high flatness effect due to the inclusion of polycarboxylic acid is considered to be due to the surface protection effect (adhesion suppression action of silicon oxide film) by adsorption of polycarboxylic acid on the surface of silicon oxide film and cerium oxide particles. It is done.
- a polycarboxylic acid and a strong acid in combination dissociation of the polycarboxylic acid is suppressed. Thereby, the hydrogen bond adsorption action of the polycarboxylic acid to the silicon oxide film is strengthened, and thus the force considered to obtain the above effect is not limited to this mechanism.
- the pKa value in the present invention is “Chemical Handbook Basic Edition” revised 4th edition (published on September 30, 1993, by the Chemical Society of Japan, published by Maruzen Co., Ltd., II— 317-11-322. ) Power is also quoted.
- the strong acid may be used as a salt in the form of a salt.
- Strong acid salts include ammonium sulfate, ammonium nitrate, ammonium oxalate, ammonium sulfite, ammonium nitrite, ammonium amidosulfate, ammonium iodate, Ammonium salts such as ammonium persulfate and ammonium persulfate are listed.
- the strong acid content is required to be 100 to 1000 ppm by weight in the abrasive, preferably 200 to 1000 ppm, more preferably 300 to 600 ppm.
- a range of 0.01 parts by weight or more and 0.1 parts by weight or less is required with respect to 100 parts by weight of the CMP abrasive.
- it is 0.02 parts by weight or more and 0.1 parts by weight or less, more preferably 0.03 parts by weight or more and 0.06 parts by weight or less.
- the content of strong acid in the weight ratio in the abrasive must be 50 to: LOOOppm.
- the strong acid is a monovalent strong acid
- its content is preferably 50 to 500 ppm, more preferably 100 to 500 ppm, and even more preferably 150 to 300 ppm.
- the content is preferably 100 to 1000 ppm, more preferably 200 to 1 OOOppm, and more preferably 300 to 600 ppm.
- the divalent strong acid tends to be less likely to agglomerate than the monovalent strong acid.
- the abrasive of the present invention may be used in combination with other water-soluble polymers.
- Other water-soluble polymers are not particularly limited, for example, polysaccharides such as alginic acid, pectinic acid, carboxymethyl cellulose, agar, curdlan and pullulan; polyaspartic acid, polyglutamic acid, polylysine, polymalic acid , Polycarboxylic acids such as polyamic acid, polymaleic acid, polyitaconic acid, polyfumaric acid, polyamic acid ammonium salt, polyamic acid sodium salt and polydarioxylic acid and their salts; And vinyl-based polymers.
- These water-soluble polymers preferably have a weight average molecular weight of 500 or more. The blending amount of these is preferably in the range of 0.01 to 5 parts by weight with respect to 100 parts by weight of the CMP abrasive.
- the CMP abrasive in the present invention is adjusted to a desired pH within a predetermined range and used for polishing. It is.
- aqueous ammonia is preferably used rather than alkali metals when used for semiconductor polishing.
- an aqueous solution in which a strong acid, an unneutralized polycarboxylic acid and water are mixed is prepared, and the aqueous solution can be adjusted by adding a pH adjuster such as ammonia water. Then, it is mixed with the remaining cerium oxide particles to obtain a CMP abrasive. If the amount of ammonia that reaches a predetermined pH is known, it is possible to add a strong acid at a predetermined concentration after adding ammonia.
- a polycarboxylic acid ammonium salt having a neutralization rate of 100% or less that is, a polycarboxylic acid partially or completely neutralized with a pH adjusting agent in place of the polycarboxylic acid and the pH adjusting agent. It can also be used.
- the polycarboxylic acid ammonium salt can be mixed with water prior to the strong acid, and a strong acid in a predetermined concentration range can be added to adjust to a predetermined pH.
- the neutralization rate of the polycarboxylic acid ammonium is determined by the following method. Solid-liquid separation of the abrasive is performed for 30 minutes at 15,000 rpm using a CF-15R micro high-speed centrifuge manufactured by Hitachi Koki Co., Ltd. equipped with an angle porter. Using a total organic carbon meter, TOC-5000, manufactured by Shimadzu Corporation, measure the organic carbon content of the supernatant and measure the polycarboxylic acid concentration.
- the electrophoresis solution is 10 mM imidazole
- the sample injection is the drop method (25 mm, 90 sec)
- the electrophoresis voltage is 30 kV
- the detection method is indirect UV (210 nm). Measure the ammonium ion concentration with, and determine the neutralization rate of the polystrength rubonic acid.
- the pH of the CMP abrasive needs to be 4.0 or more and pH 7.5 or less, preferably pH 4.5 or more and pH 5.5 or less. If the pH is too low, the chemical polishing action of the abrasive itself will be reduced, which will reduce the polishing rate and make it difficult for the dispersant to dissociate. Dispersion stability tends to decrease. On the other hand, if the pH is too high, the flatness will decrease, and the amount of polycarboxylic acid or strong acid required to obtain high flatness will increase, and the ammonia content will increase accordingly. This is because the dispersion stability of cerium particles tends to decrease and the particle diameter of cerium oxide tends to increase.
- the pH of the CMP abrasive is measured by a pH meter (for example, manufactured by Yokogawa Electric Corporation).
- the polishing agent of the present invention includes an acid-cerium slurry comprising acid-cerium particles, a dispersant, and water, a polycarboxylic acid, a strong acid, and water, and a pH adjuster such as ammonia as necessary. Even if stored as a two-component CMP abrasive that is separated from the pH-adjusted additive solution, acid / cerium particles, dispersant, polycarboxylic acid, strong acid and water, and if necessary pH adjustment It may be stored as a one-component abrasive containing an agent.
- the additive solution is sent through a separate pipe from the cerium oxide slurry, and these pipes are merged, mixed immediately before the supply pipe outlet, and supplied onto the polishing platen. be able to. It is also possible to supply acid cerium slurry stored as a two-component abrasive, additive, and deionized water in a predetermined mixing ratio in advance, so that one-component abrasive is supplied through one pipe. it can. Further, when the cerium oxide slurry and additive are mixed in the pipe as described above, the deionized water can be mixed as necessary to adjust the polishing characteristics.
- a substrate on which a film to be polished is formed is pressed against a polishing cloth on a polishing platen and pressurized, and the CMP abrasive of the present invention is supplied between the film to be polished and the polishing cloth.
- the film to be polished is polished by relatively powering the base plate and the polishing surface plate.
- an inorganic insulating layer is formed on a semiconductor substrate such as a substrate related to semiconductor element manufacture, for example, a semiconductor substrate at a stage where a circuit element and a wiring pattern are formed, or a semiconductor substrate at a stage where a circuit element is formed.
- the substrate which was made is mentioned.
- the film to be polished include the inorganic insulating layer, such as an oxide silicon film layer or a silicon nitride film layer and an oxide silicon film layer. It is. By polishing the silicon oxide film layer or silicon nitride film layer formed on such a semiconductor substrate with the CMP abrasive, unevenness on the surface of the silicon oxide film layer is eliminated, and the entire surface of the semiconductor substrate is removed.
- the ratio of the silicon oxide film polishing rate to the silicon nitride film polishing rate, the silicon oxide film polishing rate Z and the silicon nitride film polishing rate are preferably 10 or more. If this ratio is less than 10, the difference between the silicon oxide film polishing rate and the silicon nitride film polishing rate is small, and it becomes difficult to stop polishing at a predetermined position when performing shallow trench isolation. When this ratio is 10 or more, the polishing rate of the silicon nitride film is further reduced and the polishing can be easily stopped, which is preferable for shallow trench isolation. In addition, it is preferable that scratches are less likely to occur during polishing for use in shallow trench isolation.
- polishing method will be described by taking the case of a semiconductor substrate on which an inorganic insulating layer is formed as an example.
- the polishing apparatus includes a polishing surface plate to which a polishing cloth (pad) can be attached and a motor capable of changing the number of rotations, and a semiconductor substrate or the like.
- a general polishing apparatus having a holder capable of holding a substrate having a polishing film can be used.
- polishing apparatus manufactured by Ebara Manufacturing Co., Ltd .: Model No. EPO-111 can be used.
- the polishing cloth general non-woven fabric, foamed polyurethane, porous fluorine resin and the like can be used, and there is no particular limitation.
- it is preferable that the polishing cloth is subjected to groove processing so that the CMP abrasive is accumulated.
- the rotation speed of the platen is preferably 200 rpm or less so that the semiconductor substrate does not pop out.
- the pressure (working load) applied to the semiconductor substrate is lOOkPa so that scratches do not occur after polishing.
- the following is preferred.
- CMP polishing agent is continuously supplied to the polishing cloth with a pump. This supply is not limited, but it is preferable that the surface of the polishing cloth is always covered with CMP abrasive.
- the semiconductor substrate after polishing is thoroughly washed in running water, and then water droplets adhering to the semiconductor substrate are removed using a spin dryer or the like, and then dried and dried.
- the inorganic insulating layer which is a polishing film
- a polishing film with the above-described abrasive
- surface irregularities can be eliminated and a smooth surface can be obtained over the entire surface of the semiconductor substrate.
- an aluminum wiring is formed on the silicon oxide insulating film layer
- a silicon oxide insulating film is formed again between the wirings and on the wirings by a method to be described later, and then polished in the same manner using the CMP abrasive to obtain a smooth surface.
- the protruding portion needs to be selectively polished.
- a protective film is formed on the surface of the cerium oxide particles or the film to be polished.
- the film to be polished in the concave portion having a small effective polishing load is protected, but the film to be polished in the convex portion having a large effective polishing load is selectively polished by removing the protective film made of the water-soluble polymer.
- a global flatness with little dependence can be achieved.
- Examples of a method for producing an inorganic insulating film in which the CMP abrasive of the present invention is used include a low-pressure CVD method and a plasma CVD method. Silicon oxide film formation by the low pressure CVD method uses monosilane: SiH as the Si source and oxygen: O as the oxygen source. This SiH—O oxidation reaction
- the reaction gas includes SiH—N 2 O gas using SiH as the Si source and N 2 O as the oxygen source,
- TEOS-O-based gas using tetraethoxysilane (TEOS) as Si source
- the substrate temperature is preferably in the range of 250 ° C. to 400 ° C., and the reaction pressure is in the range of 67 to 400 Pa.
- elements such as phosphorus and boron may be doped in the silicon oxide film in the present invention.
- silicon nitride film formation by low-pressure CVD uses dichlorosilane: SiH C1 as a Si source and ammonia: NH as a nitrogen source. This SiH C1— N
- the reaction gas is SiH-NH gas using SiH as Si source and NH as nitrogen source.
- the substrate temperature is preferably 300 ° C to 400 ° C! /.
- the CMP abrasive and polishing method of the present invention can be applied to manufacturing processes of various semiconductor devices other than just a silicon oxide film formed on a semiconductor substrate.
- Insulating films such as silicon oxide film, glass, silicon nitride, etc. formed on wiring boards with fixed wiring; films mainly containing polysilicon, Al, Cu, Ti, TiN, W, Ta, TaN, etc .; photo Optical glass such as mask 'lens'prism; Inorganic conductive film such as ITO; Optical integrated circuit composed of glass and crystalline material ⁇ Optical switching element ⁇ Optical waveguide, optical fiber end face, scintillator, etc.
- Crystals Solid laser single crystal, blue laser LED sapphire substrate, semiconductor single crystal such as SiC, GaP, GaAs, etc .; glass substrate for magnetic disk; magnetic head, etc. can be polished.
- the resulting supernatant was then diluted with deionized water to a solid content concentration of 5% by weight to obtain an acid-cerium slurry. Dilute to an appropriate concentration to measure the average particle size in the cerium oxide slurry, and use a laser diffraction particle size analyzer, Master Sizer Microplus (trade name, manufactured by Malvern), with a refractive index of 1.93, absorption 0 As a result, the value of D50 was 170 nm.
- impurity ions Na, K, Fe, Al, Zr, Cu, Si, Ti
- atomic absorption photometer AA-670G model number, manufactured by Shimadzu Corporation
- Example 1 (Preparation of polycarboxylic acid-containing additive solution)
- a commercially available polyacrylic acid aqueous solution (weight average molecular weight 5000) (40% by weight) 4 0.5 g and 4600 g of deionized water were mixed, and an abrasive 600 Og after mixing with cerium oxide (ceria) slurry.
- Deionized water was mixed to obtain an additive solution.
- Example 2 40.5 g of the same commercially available polyacrylic acid aqueous solution (40% by weight) as in Example 1 and 4600 g of deionized water were mixed, and the sulfuric acid concentration in 6000 g of the abrasive after ceria slurry mixing was 300 ppm. after 1. 88 g addition of sulfuric acid (96 wt 0/0) so that, adjusted to pH 4. 8 with ammonia water (25 weight 0/0), and finally becomes an aqueous solution weight force 800g to deionized Water was mixed.
- Example 3 40.5 g of the same commercially available polyacrylic acid aqueous solution (40% by weight) as in Example 1 and 4600 g of deionized water were mixed, and the sulfuric acid concentration in 6000 g of the abrasive after ceria slurry mixing was 600 p pm after 3. 75 g addition of sulfuric acid (96 wt 0/0) so that, adjusted to pH 4. 8 with ammonia water (25 weight 0/0), and finally becomes an aqueous solution weight force 800g to deionized Water was mixed.
- Example 4 In Example 4, 40.5 g of the same commercially available polyacrylic acid aqueous solution (40% by weight) as in Example 1 and 4600 g of deionized water were mixed, and the sulfuric acid concentration in 6000 g of the abrasive after ceria slurry mixing was 900 ppm. after 5. 63 g addition of sulfuric acid (96 wt 0/0) so that, adjusted to pH 4. 8 with ammonia water (25 weight 0/0), and finally becomes an aqueous solution weight force 800g to deionized Water was mixed.
- Example 5 In Example 5, 40.5 g of the same commercially available polyacrylic acid aqueous solution (40 wt%) as in Example 1 and 4600 g of deionized water were mixed, and the hydrochloric acid concentration in 6000 g of the abrasive after ceria slurry mixing was 300 ppm. pH4 with hydrochloric acid such that the (36 weight 0/0) 5. Og after the addition, aqueous ammonia (25 wt 0/0). adjusted to 8, and finally as to become a solution weight force 800g deionized water Were mixed.
- Example 6 40.5 g of the same commercially available polyacrylic acid aqueous solution (40% by weight) as in Example 1 and 4600 g of deionized water were mixed, and the nitric acid concentration in 6000 g of the abrasive after ceria slurry mixing was 300 ppm. after 2. 58 g addition of nitric acid (70 wt 0/0) so that, adjusted to pH 4. 8 with ammonia water (25 weight 0/0), and finally becomes an aqueous solution weight force 800g to deionized Water was mixed.
- Example 1 The same commercially available aqueous solution of polyacrylic acid (weight average molecular weight 5000) (40 wt 0/0) were mixed 40. 5 g of deionized water 4600g, without the addition of sulfuric acid Adjust the pH to 4.8 with ammonia water (25% by weight), and finally remove it so that the weight of the aqueous solution reaches 800 g. On water was mixed.
- Comparative Example 2 40.5 g of the same commercially available polyacrylic acid aqueous solution (40 wt%) as in Comparative Example 1 and 4600 g of deionized water were mixed, and the malic acid concentration in 6000 g of the abrasive after ceria slurry mixing was 3 after 1. 8 g addition of malic acid so that the OOppm, adjusted with ammonia water (25 weight 0/0) to pH 4. 8, and finally mixing the manner deionized water comprising an aqueous solution by weight force 800 g.
- Comparative Example 3 the same commercially available polyacrylic acid aqueous solution (40% by weight) as Comparative Example 1 was mixed with 40.5 g of deionized water and 4600 g of deionized water. Cono and succinic acid concentrations in 6000 g of the abrasive after ceria slurry mixing There after 1. 8 g adding succinic acid to be 3 OOppm, adjusted with ammonia water (25 weight 0/0) to pH 4. 8, and finally mixing the manner deionized water comprising an aqueous solution weight force 800g .
- Comparative Example 4 40.5 g of the same commercially available polyacrylic acid aqueous solution (40 wt%) as in Comparative Example 1 and 4600 g of deionized water were mixed, and the acetic acid concentration in 6000 g of the abrasive after ceria slurry mixing was 300 ppm. after 1. 8 g acetic acid (99.9 wt 0/0) so that, adjusted to pH 4. 8 with ammonia water (25 weight 0/0), so that the last solution weight force 800g Deionized water was mixed.
- Comparative Example 5 40.5 g of the same commercially available polyacrylic acid aqueous solution (40 wt%) as in Comparative Example 1 and 4600 g of deionized water were mixed, and the sulfuric acid concentration in 6000 g of the abrasive after ceria slurry mixing was 1200 ppm. after 7. 5 g addition of sulfuric acid (96 wt 0/0) so that, adjusted to pH 4. 8 with ammonia water (25 weight 0/0), and finally becomes an aqueous solution weight force 800g to deionized Water was mixed.
- the abrasive had a pH of 5.0.
- the results were measured by diluting to an appropriate concentration.
- the value is 170 nm.
- the value of 0 was 180 nm.
- the supernatant obtained by centrifuging the CMP abrasives obtained in Examples 1 to 6 and Comparative Examples 1 to 5 was subjected to a capillary electrophoresis measurement device (model number CAPI— manufactured by Otsuka Electronics Co., Ltd.). 3300) was used to measure sulfate ion concentration, hydrochloric acid ion concentration and nitrate ion concentration in the abrasive. Electrophoresis voltage—30 kV, buffer, sample injection was performed using the drop method (drop 25 mm), injection time 30 seconds. A calibration curve was created at three points for each strong acid ion concentration of 300, 600 and lOOOppm, and the concentration was calculated.
- the abrasives of Examples 1 to 6 and Comparative Example 5 contained strong acid ions at a predetermined concentration.
- the strong acid ion concentration in the abrasives of Comparative Examples 1 to 4 was 1 Oppm or more.
- Shallow element isolation (STI) insulation film Among the test wafers for CMP evaluation, as a blanket wafer with no pattern, PE-TEOS oxide silicon film (SiO 2) is formed on the Si substrate.
- PE-TEOS oxide silicon film SiO 2
- a film-formed wafer ( ⁇ 200 mm) was used.
- recess depth is 480nm, wrench depth 330nm + Si N film thickness 150 force
- Convex and space (concave) width is 100 m pitch
- convex pattern density is 10% to 90%
- Lines and spaces are simulated STI patterns, masked with convex Si N
- a convex pattern density of 10% means a pattern in which convex width 10 m and concave width 90 m are arranged alternately
- convex pattern density 90% means convex width 90 m and concave width 10 Means a pattern of alternating / zm.
- the above test wafer is set in the holder of the polishing equipment (Applied Materials, product name: Mirra) with the suction pad for attaching the substrate to be held.
- a polishing pad model IC-1000 (K groove) made of porous urethane resin was pasted.
- the holder is placed on the pad with the insulating film face down, and the membrane, retainer ring, and inner tube pressure are set to 3. Opsi, 3.5 psi, 3.0 psi (20.6 kPa, 24. , 20.6kPa) [This setting was made.
- the surface plate and the wafer were operated at 98 rpm and 78 rpm, respectively, to polish the test wafer for STI insulating film CMP evaluation.
- the blanket wafer was polished for 60 seconds.
- the polishing time of the patterned wafer is the time until the Si N film is almost exposed at the 100% (4 X 4 convex) pattern part.
- Example 7 960 g of deionized water was put into a 3 liter synthesis flask, heated to 90 ° C. with stirring under a nitrogen gas atmosphere, and then 547 g of acrylic acid and 54 g of ammonium persulfate were added. A solution dissolved in 500 g of deionized water was poured into the flask over 2 hours. Thereafter, the mixture was kept at 90 ° C. for 5 hours, cooled and taken out to obtain a polyacrylic acid aqueous solution. The nonvolatile content was measured and found to be 25% by weight.
- Example 8 960 g of deionized water was put into a 3 liter synthesis flask, heated to 90 ° C with stirring under a nitrogen gas atmosphere, and then 497 g of acrylic acid and 2,2'-azobis were added. [2- (2-imidazoline-2-yl) propane] disulphate dihydrate 103 g dissolved in 500 g of deionized water was poured into the flask over 2 hours. Thereafter, the mixture was kept at 90 ° C. for 3 hours, cooled and taken out to obtain a polyacrylic acid solution. The nonvolatile content was measured and found to be 25% by weight. When the molecular weight of the obtained polyacrylic acid was measured in the same manner as in Example 7, the weight average molecular weight was 3200 (polyethylene glycol equivalent).
- Example 9 960 g of deionized water was put into a 3 liter synthesis flask, heated to 90 ° C with stirring under a nitrogen gas atmosphere, and then 256 g of methacrylic acid, 255 g of acrylic acid, and 2, 89 g of 2′-azobis [2- (2-imidazoline-2-yl) propane] disulfate dihydrate dissolved in 500 g of deionized water was poured into the flask over 2 hours. Thereafter, the mixture was kept at 90 ° C. for 3 hours and then cooled and taken out to obtain a water-soluble polymer solution (polyacrylic acid-methacrylic acid copolymer aqueous solution). The nonvolatile content was measured and found to be 25% by weight. When the molecular weight of the obtained water-soluble polymer was measured in the same manner as in Example 7, the weight average molecular weight was 7,500 (polyethylene glycol equivalent).
- the weight average molecular weight was 5000 (polyethylene glycol equivalent).
- the polycarboxylic acid aqueous solution obtained in Examples 7 to 8 and Comparative Example 6 and the polyacrylic acid-methacrylic acid copolymer aqueous solution obtained in Example 9 were diluted 100 times with deionized water.
- the sulfate ion concentration of this diluted solution was measured using the same apparatus and the same conditions as the supernatant of the CMP abrasive slurry of Examples 1-6.
- a calibration curve was created at three points of sulfate ion concentration of 300, 600, and lOOOOppm, and the concentration was calculated.
- the polymer of Example 7 and Example 9 contained about 8% by weight sulfate ion, the polymer of Example 8 contained about 9% by weight sulfate ion, and the polymer of Comparative Example 6 It was confirmed that the sulfate ion concentration in the solution was less than 1% by weight.
- Example 9 polyacrylic acid over methacrylic acid copolymer solution (25 by weight 0/0) obtained above 64. mixing 8g and Datsuisain water 4600g, ammonia water (25 weight 0 / 0) at was adjusted to pH 4. 8, and finally mixing the manner deionized water comprising an aqueous solution by weight force 800 g.
- the abrasives of Examples 7 to 9 and Comparative Example 6 were The average particle size D50 was 170 nm. In addition, the particle diameter after 3 months did not change with an average value D50 of 170 nm.
- the sulfate ion concentration of the supernatant obtained by centrifuging each of the obtained CMP abrasives was measured using the same apparatus and the same conditions as the supernatants of the CMP abrasive supernatants of Examples 1 to 6. .
- a calibration curve was created at three points of sulfate ion concentration of 300, 600 and lOOOppm, and the concentration was calculated.
- the sulfate ion concentrations in the abrasives of Example 7, Example 8 and Example 9 were 2 respectively. 40 ppm, 270 ppm and 230 ppm were confirmed.
- the concentration of sulfate in the abrasive of Comparative Example 6 was 10 ppm or less.
- Example 10 to 11 and Comparative Examples 7 to 8 examination was made by changing the pH of the abrasive.
- Example 12 a study was conducted using a strong acid salt.
- Example 13 and Comparative Example 9 using Poriatari Le acid Anmoniumu salts was investigated with an adjusted P H with a strong acid.
- Example 10 22.5 g of commercially available polyacrylic acid aqueous solution (weight average molecular weight 5000) (40 wt%) and 4600 g of deionized water were mixed so that the sulfuric acid concentration in 6000 g of the abrasive after ceria slurry mixing was 300 ppm. After adding 1.88 g of sulfuric acid (96 wt%) to the solution, the pH was adjusted to 4.0 with aqueous ammonia (25 wt%), and finally deionized water was mixed so that the weight of the aqueous solution became 800 g.
- Example 11 150 g of the same commercially available polyacrylic acid aqueous solution (40% by weight) as in Example 10 and 4500 g of deionized water were mixed, and the sulfuric acid concentration in 6000 g of the abrasive after ceria slurry mixing was 10 OOppm. after mixing 6. 25 g addition of sulfuric acid (96 wt 0/0), and adjusted to aqueous ammonia (25 wt 0/0) in hand pH 6. 8, finally as deionized water comprising an aqueous solution by weight force 800g as did
- Example 12 40.5 g of the same commercially available polyacrylic acid aqueous solution (40 wt%) as in Example 10 and 4600 g of deionized water were mixed, and the sulfuric acid concentration in 6000 g of the abrasive after ceria slurry mixing was 30 Oppm. Then, 2.44 g of ammonium sulfate was added to adjust the pH to 4.8 with aqueous ammonia (25 wt%), and finally deionized water was mixed so that the weight of the aqueous solution became 800 g.
- Example 13 a commercially available neutralization of about 100% of polyacrylic acid ammonium - ⁇ anhydrous solution (weight average molecular weight 8000) (. 40 weight 0/0, pH6 1) 27. Og of deionized water 4600g After adding nitric acid (70% by weight) to adjust the pH to 4.6, the final weight of the aqueous solution is 4800 The water was mixed so that it was g.
- Comparative Example 9 a commercially available over-neutralized (neutralization ratio of 100% or more) polyacrylate en mode -. ⁇ anhydrous solution (weight average molecular weight 8000) (40 wt 0/0, pH 9 1 27. Mix Og and 4600 g of deionized water, add nitric acid (70% by weight) to adjust the pH to 4.6, and finally mix deionized water to a weight of 800 g of aqueous solution. did.
- the electrophoresis solution was 10 mM imidazole
- the sample injection was the drop method (25 mm, 90 sec)
- the electrophoresis voltage was 30 kV
- the detection method was indirect UV (210 nm).
- the neutralization rate of polyacrylic acid was determined by measuring the concentration of the muon ion.
- the pH of the abrasive was 4.2 for Example 10, 7.0 for Example 11, 5.0 for Example 12, 4.8 for Example 13, 3.9 for Comparative Example 7, and Comparative Example, respectively. 8 was 7.6, and Comparative Example 9 was 4.8.
- the average particle size of the particles in the abrasive is determined by the laser diffraction particle size As a result of diluting to an appropriate concentration for measurement with a cloth meter, the D50 value was 170 nm in Examples 10 to 13, and the D50 value was 180 nm in Comparative Examples 7 to 9.
- Example 10 The particle diameter after 3 months passed was Example 10 to: In L1, the value of D50 was 180 nm, and Examples 12 and 13 remained at 170 nm. In Comparative Examples 7 to 9, the value of D50 was 200 nm, and the cerium oxide particle diameter tended to increase.
- the supernatant obtained by centrifuging each of the CMP abrasives was subjected to the same apparatus as the supernatant of the CMP abrasives of Examples 1 to 6 in terms of sulfate ion concentration and nitrate ion concentration. Measurements were made under the same conditions. A calibration curve was created at three points for each strong acid ion concentration of 300, 600, and 1200 ppm, and the concentration was calculated. As a result, it was confirmed that the abrasives of Examples 10 to 12 and Comparative Examples 7 to 8 contained sulfate ions having a predetermined concentration. The nitrate ion concentrations in the abrasives of Example 13 and Comparative Example 9 were found to be 520 ppm and 1200 ppm, respectively.
- Example 1 by containing a strong acid in addition to polyacrylic acid, the difference in thickness of the projections in pattern polishing is reduced as compared with Comparative Example 1 that does not contain a strong acid.
- Example 7 to Example 9 by using polyacrylic acid containing sulfuric acid or polyacrylic-methacrylic acid, compared with Comparative Example 6 using polyacrylic acid not containing sulfuric acid, no. The difference in film thickness between the convex portions between the pattern densities in turn polishing is reduced.
- Example 10 and Example 11 the difference in convex film thickness between pattern densities in pattern polishing was reduced by adjusting the content of polyacrylic acid and sulfuric acid in accordance with the pH of the abrasive.
- Example 12 the same effect was obtained when a strong acid salt was used.
- Example 13 is a pre-neutralized polyacrylic acid.
- the strength of nitrate which is an example of adjusting pH with nitric acid using ammonium salt, is within the scope of the present invention, and the same effect was obtained.
- Comparative Examples 2 to 4 are examples in which polyacrylic acid and a weak acid having a pKa> 3.2 are contained, and the difference in convex film thickness between pattern densities in force pattern polishing is not reduced.
- Comparative Example 5 contains strong acid in addition to polyacrylic acid, but since the sulfuric acid content is too high, the particle size immediately after mixing with the cerium oxide abrasive increases, and the polishing time for NOTURN also increases. It has become long (> 350 seconds).
- Comparative Example 7 and Comparative Example 8 the force when the pH of the polishing agent is different. In Comparative Example 7, the polishing agent pH is too low (pH 3.9).
- Comparative Example 8 Tended to become longer (> 400 seconds), and the cerium oxide particle size immediately after mixing of the abrasives tended to increase.
- Comparative Example 8 since the polishing agent pH was too high (pH 7.6), the cerium oxide particle size immediately after mixing the polishing agent was observed to have a large effect of containing polyacrylic acid and sulfuric acid.
- Comparative Example 9 is an example in which an excessively neutralized ammonium salt is used as polyacrylic acid, and the pH is adjusted with nitric acid.
- the polishing time of the patterned wafer Even after 450 seconds, a polishing residue was observed, the particle size of cerium oxide immediately after mixing of the abrasives tended to increase, and the dispersion stability also deteriorated.
- the film thickness difference due to the difference in the turn density is reduced, and the process management is also performed at high speed. It is possible to provide an abrasive and a polishing method capable of easily polishing an oxide silicon film and the like.
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Abstract
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US11/576,010 US20070218811A1 (en) | 2004-09-27 | 2005-09-25 | Cmp polishing slurry and method of polishing substrate |
CN2005800317627A CN101023512B (zh) | 2004-09-27 | 2005-09-27 | Cmp抛光剂以及衬底的抛光方法 |
JP2006537753A JP4853287B2 (ja) | 2004-09-27 | 2005-09-27 | Cmp研磨剤及び基板の研磨方法 |
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TWI256971B (en) * | 2002-08-09 | 2006-06-21 | Hitachi Chemical Co Ltd | CMP abrasive and method for polishing substrate |
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- 2005-09-27 KR KR1020077006309A patent/KR100849551B1/ko active IP Right Grant
- 2005-09-27 TW TW094133502A patent/TWI286568B/zh active
- 2005-09-27 WO PCT/JP2005/017747 patent/WO2006035771A1/ja active Application Filing
- 2005-09-27 CN CN2005800317627A patent/CN101023512B/zh active Active
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EP1796152A1 (en) * | 2004-07-23 | 2007-06-13 | Hitachi Chemical Company, Ltd. | Cmp polishing agent and method for polishing substrate |
EP1796152A4 (en) * | 2004-07-23 | 2008-12-03 | Hitachi Chemical Co Ltd | POLISHING AGENT FOR MECHANICAL CHEMICAL PLANARIZATION (CMP) |
US9293344B2 (en) | 2004-07-23 | 2016-03-22 | Hitachi Chemical Company, Ltd. | Cmp polishing slurry and method of polishing substrate |
JP2007027663A (ja) * | 2005-07-21 | 2007-02-01 | Fujimi Inc | 研磨用組成物 |
CN101490201B (zh) * | 2006-06-07 | 2013-01-16 | 卡伯特微电子公司 | 用于抛光氮化硅材料的组合物及方法 |
US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
KR101268128B1 (ko) * | 2006-06-07 | 2013-05-31 | 캐보트 마이크로일렉트로닉스 코포레이션 | 질화규소 물질의 연마를 위한 조성물 및 방법 |
US20100022171A1 (en) * | 2006-10-16 | 2010-01-28 | Nevin Naguib | Glass polishing compositions and methods |
JP2008306054A (ja) * | 2007-06-08 | 2008-12-18 | Fujifilm Corp | 研磨液 |
US9548211B2 (en) | 2008-12-04 | 2017-01-17 | Cabot Microelectronics Corporation | Method to selectively polish silicon carbide films |
WO2010104085A1 (ja) * | 2009-03-13 | 2010-09-16 | 旭硝子株式会社 | 半導体用研磨剤、その製造方法及び研磨方法 |
JP2012121086A (ja) * | 2010-12-07 | 2012-06-28 | Yokkaichi Chem Co Ltd | 研磨用添加剤及び高分散性研磨スラリー |
JP2012146974A (ja) * | 2010-12-24 | 2012-08-02 | Hitachi Chem Co Ltd | 研磨液及びこの研磨液を用いた基板の研磨方法 |
JP2016183346A (ja) * | 2010-12-24 | 2016-10-20 | 日立化成株式会社 | 研磨液及びこの研磨液を用いた基板の研磨方法 |
US9564337B2 (en) | 2010-12-24 | 2017-02-07 | Hitachi Chemical Co., Ltd. | Polishing liquid and method for polishing substrate using the polishing liquid |
US9593261B2 (en) | 2015-02-04 | 2017-03-14 | Asahi Glass Company, Limited | Polishing agent, polishing method, and liquid additive for polishing |
Also Published As
Publication number | Publication date |
---|---|
US20070218811A1 (en) | 2007-09-20 |
CN101023512A (zh) | 2007-08-22 |
KR20070044065A (ko) | 2007-04-26 |
JP4853287B2 (ja) | 2012-01-11 |
JPWO2006035771A1 (ja) | 2008-05-15 |
TW200621958A (en) | 2006-07-01 |
TWI286568B (en) | 2007-09-11 |
CN101023512B (zh) | 2010-11-24 |
KR100849551B1 (ko) | 2008-07-31 |
JP2011181946A (ja) | 2011-09-15 |
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