JP4832629B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4832629B2
JP4832629B2 JP2000304372A JP2000304372A JP4832629B2 JP 4832629 B2 JP4832629 B2 JP 4832629B2 JP 2000304372 A JP2000304372 A JP 2000304372A JP 2000304372 A JP2000304372 A JP 2000304372A JP 4832629 B2 JP4832629 B2 JP 4832629B2
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JP
Japan
Prior art keywords
substrate
semiconductor device
impurity layer
layer
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000304372A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002110976A5 (enExample
JP2002110976A (ja
Inventor
隆 黒井
修一 上野
勝之 堀田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2000304372A priority Critical patent/JP4832629B2/ja
Priority to US09/805,923 priority patent/US6541825B2/en
Priority to TW090113457A priority patent/TW490855B/zh
Priority to KR10-2001-0032296A priority patent/KR100388585B1/ko
Publication of JP2002110976A publication Critical patent/JP2002110976A/ja
Priority to US10/352,097 priority patent/US6841440B2/en
Publication of JP2002110976A5 publication Critical patent/JP2002110976A5/ja
Application granted granted Critical
Publication of JP4832629B2 publication Critical patent/JP4832629B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2000304372A 2000-10-04 2000-10-04 半導体装置 Expired - Fee Related JP4832629B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000304372A JP4832629B2 (ja) 2000-10-04 2000-10-04 半導体装置
US09/805,923 US6541825B2 (en) 2000-10-04 2001-03-15 Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same
TW090113457A TW490855B (en) 2000-10-04 2001-06-04 Semiconductor device and method of manufacturing the same
KR10-2001-0032296A KR100388585B1 (ko) 2000-10-04 2001-06-09 반도체 장치 및 반도체 장치의 제조 방법
US10/352,097 US6841440B2 (en) 2000-10-04 2003-01-28 Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000304372A JP4832629B2 (ja) 2000-10-04 2000-10-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2002110976A JP2002110976A (ja) 2002-04-12
JP2002110976A5 JP2002110976A5 (enExample) 2007-11-01
JP4832629B2 true JP4832629B2 (ja) 2011-12-07

Family

ID=18785428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000304372A Expired - Fee Related JP4832629B2 (ja) 2000-10-04 2000-10-04 半導体装置

Country Status (4)

Country Link
US (2) US6541825B2 (enExample)
JP (1) JP4832629B2 (enExample)
KR (1) KR100388585B1 (enExample)
TW (1) TW490855B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4832629B2 (ja) * 2000-10-04 2011-12-07 ルネサスエレクトロニクス株式会社 半導体装置
US7248559B2 (en) 2001-10-17 2007-07-24 Nortel Networks Limited Scattered pilot pattern and channel estimation method for MIMO-OFDM systems
DE10311312B4 (de) * 2003-03-14 2007-08-16 Infineon Technologies Ag Isolatorstruktur und Verfahren zur Erzeugung von Isolatorstrukturen in einem Halbleitersubstrat
JP4578785B2 (ja) * 2003-05-21 2010-11-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2005277024A (ja) * 2004-03-24 2005-10-06 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US7129559B2 (en) * 2004-04-09 2006-10-31 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage semiconductor device utilizing a deep trench structure
US20070235783A9 (en) * 2005-07-19 2007-10-11 Micron Technology, Inc. Semiconductor constructions, memory arrays, electronic systems, and methods of forming semiconductor constructions
US7772672B2 (en) 2005-09-01 2010-08-10 Micron Technology, Inc. Semiconductor constructions
KR100713924B1 (ko) * 2005-12-23 2007-05-07 주식회사 하이닉스반도체 돌기형 트랜지스터 및 그의 형성방법
US7799694B2 (en) 2006-04-11 2010-09-21 Micron Technology, Inc. Methods of forming semiconductor constructions
US7670888B2 (en) * 2007-04-11 2010-03-02 Texas Instruments Incorporated Low noise JFET
US7906390B2 (en) * 2007-07-20 2011-03-15 International Business Machines Corporation Thin gate electrode CMOS devices and methods of fabricating same
US8811339B2 (en) * 2008-07-07 2014-08-19 Blackberry Limited Handover schemes for wireless systems
JP5629450B2 (ja) * 2009-10-16 2014-11-19 キヤノン株式会社 半導体素子及び半導体素子の形成方法
US20120015474A1 (en) * 2010-07-19 2012-01-19 Yung-Chun Wu Method for fabricating silicon heterojunction solar cells
JP2014007310A (ja) * 2012-06-26 2014-01-16 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
US11322357B2 (en) * 2020-03-02 2022-05-03 Globalfoundries U.S. Inc. Buried damage layers for electrical isolation
CN113066726B (zh) * 2021-03-19 2021-11-16 弘大芯源(深圳)半导体有限公司 一种场效应晶体管的实现方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199376A (ja) 1984-10-19 1986-05-17 Sharp Corp 半導体装置の製造方法
JP2955459B2 (ja) * 1993-12-20 1999-10-04 株式会社東芝 半導体装置の製造方法
JPH1065153A (ja) * 1996-08-15 1998-03-06 Fujitsu Ltd 半導体装置及びその製造方法
JPH10189951A (ja) 1996-12-26 1998-07-21 Sanyo Electric Co Ltd 半導体装置の製造方法
JP3519571B2 (ja) 1997-04-11 2004-04-19 株式会社ルネサステクノロジ 半導体装置の製造方法
JPH118387A (ja) * 1997-06-18 1999-01-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH1131742A (ja) * 1997-07-14 1999-02-02 Mitsubishi Electric Corp 半導体装置の製造方法
JP3519579B2 (ja) 1997-09-09 2004-04-19 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US6025232A (en) * 1997-11-12 2000-02-15 Micron Technology, Inc. Methods of forming field effect transistors and related field effect transistor constructions
JP2000082808A (ja) * 1998-09-04 2000-03-21 Toshiba Corp 半導体装置及びその製造方法
JP2000150882A (ja) * 1998-09-04 2000-05-30 Toshiba Corp Ｍｉｓ型半導体装置及びその製造方法
JP3415459B2 (ja) * 1998-12-07 2003-06-09 株式会社東芝 半導体装置及びその製造方法
US6287920B1 (en) * 1999-09-07 2001-09-11 Texas Instruments Incorporated Method of making multiple threshold voltage integrated of circuit transistors
US6277710B1 (en) * 1999-11-15 2001-08-21 Chartered Semiconductor Manufacturing Ltd. Method of forming shallow trench isolation
JP4832629B2 (ja) * 2000-10-04 2011-12-07 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
KR20020027161A (ko) 2002-04-13
TW490855B (en) 2002-06-11
US6541825B2 (en) 2003-04-01
US6841440B2 (en) 2005-01-11
US20020038901A1 (en) 2002-04-04
JP2002110976A (ja) 2002-04-12
KR100388585B1 (ko) 2003-06-25
US20030143810A1 (en) 2003-07-31

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