JP4799522B2 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP4799522B2
JP4799522B2 JP2007267227A JP2007267227A JP4799522B2 JP 4799522 B2 JP4799522 B2 JP 4799522B2 JP 2007267227 A JP2007267227 A JP 2007267227A JP 2007267227 A JP2007267227 A JP 2007267227A JP 4799522 B2 JP4799522 B2 JP 4799522B2
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JP
Japan
Prior art keywords
region
imaging device
insulating film
solid
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007267227A
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English (en)
Japanese (ja)
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JP2009099626A (ja
JP2009099626A5 (enExample
Inventor
郁子 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2007267227A priority Critical patent/JP4799522B2/ja
Priority to US12/248,427 priority patent/US7851879B2/en
Publication of JP2009099626A publication Critical patent/JP2009099626A/ja
Publication of JP2009099626A5 publication Critical patent/JP2009099626A5/ja
Application granted granted Critical
Publication of JP4799522B2 publication Critical patent/JP4799522B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2007267227A 2007-10-12 2007-10-12 撮像装置 Expired - Fee Related JP4799522B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007267227A JP4799522B2 (ja) 2007-10-12 2007-10-12 撮像装置
US12/248,427 US7851879B2 (en) 2007-10-12 2008-10-09 Imaging device comprising shielding unit which shields light incident from imaging area to optical black area and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007267227A JP4799522B2 (ja) 2007-10-12 2007-10-12 撮像装置

Publications (3)

Publication Number Publication Date
JP2009099626A JP2009099626A (ja) 2009-05-07
JP2009099626A5 JP2009099626A5 (enExample) 2011-03-03
JP4799522B2 true JP4799522B2 (ja) 2011-10-26

Family

ID=40581759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007267227A Expired - Fee Related JP4799522B2 (ja) 2007-10-12 2007-10-12 撮像装置

Country Status (2)

Country Link
US (1) US7851879B2 (enExample)
JP (1) JP4799522B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053286A (ja) * 2006-08-22 2008-03-06 Matsushita Electric Ind Co Ltd 撮像装置チップセット及び画像ピックアップシステム
JP5302644B2 (ja) * 2008-12-03 2013-10-02 キヤノン株式会社 撮像装置、及び撮像システム
JP5493461B2 (ja) * 2009-05-12 2014-05-14 ソニー株式会社 固体撮像装置、電子機器及び固体撮像装置の製造方法
JP5367459B2 (ja) * 2009-05-28 2013-12-11 株式会社東芝 半導体撮像装置
JP5513872B2 (ja) * 2009-12-18 2014-06-04 株式会社東芝 固体撮像装置
JP5489705B2 (ja) * 2009-12-26 2014-05-14 キヤノン株式会社 固体撮像装置および撮像システム
TW201129087A (en) * 2010-02-09 2011-08-16 Novatek Microelectronics Corp Image sensor
JP2011216865A (ja) * 2010-03-17 2011-10-27 Canon Inc 固体撮像装置
JP5700945B2 (ja) * 2010-03-25 2015-04-15 キヤノン株式会社 光電変換装置及びその製造方法
KR101769969B1 (ko) 2010-06-14 2017-08-21 삼성전자주식회사 광 블랙 영역 및 활성 화소 영역 사이의 차광 패턴을 갖는 이미지 센서
JP2012049431A (ja) * 2010-08-30 2012-03-08 Sony Corp 固体撮像装置および電子機器
JP5693924B2 (ja) * 2010-11-10 2015-04-01 株式会社東芝 半導体撮像装置
JP2012164768A (ja) * 2011-02-04 2012-08-30 Toshiba Corp 固体撮像装置
US8610229B2 (en) * 2011-04-14 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Sidewall for backside illuminated image sensor metal grid and method of manufacturing same
JPWO2012144196A1 (ja) * 2011-04-22 2014-07-28 パナソニック株式会社 固体撮像装置
KR101382422B1 (ko) * 2012-11-05 2014-04-08 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
JP6271841B2 (ja) 2013-02-13 2018-01-31 ラピスセミコンダクタ株式会社 半導体装置、半導体装置の製造方法および半導体装置を搭載したシステム
JP2016146376A (ja) 2015-02-06 2016-08-12 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP6776247B2 (ja) * 2015-09-09 2020-10-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
GB2529567B (en) * 2015-09-22 2016-11-23 X-Fab Semiconductor Foundries Ag Light shield for light sensitive elements
US11127910B2 (en) 2016-03-31 2021-09-21 Sony Corporation Imaging device and electronic apparatus
CN110767667B (zh) * 2019-11-26 2022-07-08 上海微阱电子科技有限公司 一种图像传感器结构和形成方法
CN111129049B (zh) * 2019-11-29 2023-06-02 上海集成电路研发中心有限公司 一种图像传感器结构和形成方法
WO2021192600A1 (ja) * 2020-03-24 2021-09-30 パナソニックＩｐマネジメント株式会社 固体撮像素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150846A (ja) * 1998-11-12 2000-05-30 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
JP2001298175A (ja) * 2000-04-12 2001-10-26 Toshiba Corp 撮像システム
KR100614793B1 (ko) * 2004-09-23 2006-08-22 삼성전자주식회사 이미지 센서 및 이의 제조 방법.
JP4944399B2 (ja) * 2005-07-04 2012-05-30 キヤノン株式会社 固体撮像装置
KR100784387B1 (ko) 2006-11-06 2007-12-11 삼성전자주식회사 이미지 센서 및 그 형성방법
JP2008218755A (ja) * 2007-03-05 2008-09-18 Canon Inc 光電変換装置及び撮像システム

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Publication number Publication date
US7851879B2 (en) 2010-12-14
US20090108389A1 (en) 2009-04-30
JP2009099626A (ja) 2009-05-07

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