JP4746269B2 - 低温度におけるゲートスタック製造方法 - Google Patents

低温度におけるゲートスタック製造方法 Download PDF

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JP4746269B2
JP4746269B2 JP2003543069A JP2003543069A JP4746269B2 JP 4746269 B2 JP4746269 B2 JP 4746269B2 JP 2003543069 A JP2003543069 A JP 2003543069A JP 2003543069 A JP2003543069 A JP 2003543069A JP 4746269 B2 JP4746269 B2 JP 4746269B2
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layer
oxide
dielectric
substrate
silicon
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JP2005509287A (ja
JP2005509287A5 (enExample
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スヴィ ピー． ハウカ
エリック シェロ
クリストフ エフ． ポメアーデ
マエス ジャン ウィレム フーベルト
マルコ ツォミネン
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ASM International NV
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
JP2003543069A 2001-08-31 2002-08-26 低温度におけるゲートスタック製造方法 Expired - Lifetime JP4746269B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US31656201P 2001-08-31 2001-08-31
US60/316,562 2001-08-31
US10/227,475 US6806145B2 (en) 2001-08-31 2002-08-22 Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer
US10/227,475 2002-08-22
PCT/US2002/027230 WO2003041124A2 (en) 2001-08-31 2002-08-26 Method of fabricating a gate stack at low temperature

Publications (3)

Publication Number Publication Date
JP2005509287A JP2005509287A (ja) 2005-04-07
JP2005509287A5 JP2005509287A5 (enExample) 2006-01-05
JP4746269B2 true JP4746269B2 (ja) 2011-08-10

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US (1) US6806145B2 (enExample)
JP (1) JP4746269B2 (enExample)
AU (1) AU2002363358A1 (enExample)
WO (1) WO2003041124A2 (enExample)

Families Citing this family (213)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6974766B1 (en) * 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
HK1045741A1 (zh) 1998-12-23 2002-12-06 Jpmorgan Chase Bank 整合包括交易文件的生成、处理及跟踪等交易操作的系统和方法
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6936538B2 (en) 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US20020036780A1 (en) * 2000-09-27 2002-03-28 Hiroaki Nakamura Image processing apparatus
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US9139906B2 (en) * 2001-03-06 2015-09-22 Asm America, Inc. Doping with ALD technology
US7563715B2 (en) 2005-12-05 2009-07-21 Asm International N.V. Method of producing thin films
US6596643B2 (en) * 2001-05-07 2003-07-22 Applied Materials, Inc. CVD TiSiN barrier for copper integration
US6849545B2 (en) * 2001-06-20 2005-02-01 Applied Materials, Inc. System and method to form a composite film stack utilizing sequential deposition techniques
US20030003665A1 (en) * 2001-06-27 2003-01-02 Nakagawa Osamu Samuel Process for high-dielectric constant metal-insulator metal capacitor in VLSI multi-level metallization systems
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US20070009658A1 (en) * 2001-07-13 2007-01-11 Yoo Jong H Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process
WO2003029515A2 (en) * 2001-07-16 2003-04-10 Applied Materials, Inc. Formation of composite tungsten films
US20030198754A1 (en) * 2001-07-16 2003-10-23 Ming Xi Aluminum oxide chamber and process
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US20080268635A1 (en) * 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
JP2005504885A (ja) 2001-07-25 2005-02-17 アプライド　マテリアルズ　インコーポレイテッド 新規なスパッタ堆積方法を使用したバリア形成
US8026161B2 (en) * 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US6718126B2 (en) 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US6936906B2 (en) * 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US20030059538A1 (en) * 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
TW589684B (en) * 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6773507B2 (en) * 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US7081271B2 (en) * 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6900122B2 (en) * 2001-12-20 2005-05-31 Micron Technology, Inc. Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics
US6809026B2 (en) 2001-12-21 2004-10-26 Applied Materials, Inc. Selective deposition of a barrier layer on a metal film
US6939801B2 (en) * 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
EP1324393B1 (en) * 2001-12-28 2008-04-09 STMicroelectronics S.r.l. Manufacturing process of a semiconductor non-volatile memory cell and corresponding memory-cell
AU2003238853A1 (en) 2002-01-25 2003-09-02 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) * 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) * 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) * 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US6825134B2 (en) * 2002-03-26 2004-11-30 Applied Materials, Inc. Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
US7439191B2 (en) * 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6720027B2 (en) * 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US7279432B2 (en) * 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US7160577B2 (en) * 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US6784101B1 (en) * 2002-05-16 2004-08-31 Advanced Micro Devices Inc Formation of high-k gate dielectric layers for MOS devices fabricated on strained lattice semiconductor substrates with minimized stress relaxation
US7041335B2 (en) * 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7205218B2 (en) * 2002-06-05 2007-04-17 Micron Technology, Inc. Method including forming gate dielectrics having multiple lanthanide oxide layers
US6858547B2 (en) * 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US20030232501A1 (en) * 2002-06-14 2003-12-18 Kher Shreyas S. Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7186385B2 (en) * 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7066194B2 (en) * 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
US6772072B2 (en) 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US6790791B2 (en) * 2002-08-15 2004-09-14 Micron Technology, Inc. Lanthanide doped TiOx dielectric films
US7199023B2 (en) * 2002-08-28 2007-04-03 Micron Technology, Inc. Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed
US7084078B2 (en) * 2002-08-29 2006-08-01 Micron Technology, Inc. Atomic layer deposited lanthanide doped TiOx dielectric films
US7122415B2 (en) * 2002-09-12 2006-10-17 Promos Technologies, Inc. Atomic layer deposition of interpoly oxides in a non-volatile memory device
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US20040065255A1 (en) * 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US7540920B2 (en) * 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US6723581B1 (en) * 2002-10-21 2004-04-20 Agere Systems Inc. Semiconductor device having a high-K gate dielectric and method of manufacture thereof
US6686212B1 (en) * 2002-10-31 2004-02-03 Sharp Laboratories Of America, Inc. Method to deposit a stacked high-κ gate dielectric for CMOS applications
EP1420080A3 (en) * 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
US7045406B2 (en) * 2002-12-03 2006-05-16 Asm International, N.V. Method of forming an electrode with adjusted work function
US6958302B2 (en) * 2002-12-04 2005-10-25 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US7101813B2 (en) * 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
KR100522427B1 (ko) * 2002-12-30 2005-10-20 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
US7262133B2 (en) * 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
WO2004064147A2 (en) * 2003-01-07 2004-07-29 Applied Materials, Inc. Integration of ald/cvd barriers with porous low k materials
US6753248B1 (en) 2003-01-27 2004-06-22 Applied Materials, Inc. Post metal barrier/adhesion film
US6852645B2 (en) * 2003-02-13 2005-02-08 Texas Instruments Incorporated High temperature interface layer growth for high-k gate dielectric
US7192892B2 (en) * 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
WO2004084291A1 (ja) * 2003-03-17 2004-09-30 Fujitsu Limited 半導体装置と半導体装置の製造方法
US7135369B2 (en) 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
US20040198069A1 (en) * 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
US7183186B2 (en) * 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
WO2004113585A2 (en) * 2003-06-18 2004-12-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US7192824B2 (en) * 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US7049192B2 (en) * 2003-06-24 2006-05-23 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectrics
US7235495B2 (en) * 2003-07-31 2007-06-26 Fsi International, Inc. Controlled growth of highly uniform, oxide layers, especially ultrathin layers
KR20060121871A (ko) * 2003-09-11 2006-11-29 에프에스아이 인터내쇼날 인크. 음의 장 균등을 위한 음향 발산기
TW200517192A (en) * 2003-09-11 2005-06-01 Fsi Int Inc Semiconductor wafer immersion systems and treatments using modulated acoustic energy
US20050067103A1 (en) * 2003-09-26 2005-03-31 Applied Materials, Inc. Interferometer endpoint monitoring device
US7166528B2 (en) 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
TWI228789B (en) * 2004-01-20 2005-03-01 Ind Tech Res Inst Method for producing dielectric layer of high-k gate in MOST
US7098150B2 (en) * 2004-03-05 2006-08-29 Air Liquide America L.P. Method for novel deposition of high-k MSiON dielectric films
US7256450B2 (en) * 2004-03-24 2007-08-14 Micron Technology, Inc. NROM memory device with a high-permittivity gate dielectric formed by the low temperature oxidation of metals
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US20060153995A1 (en) * 2004-05-21 2006-07-13 Applied Materials, Inc. Method for fabricating a dielectric stack
US20060019033A1 (en) * 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
US8323754B2 (en) * 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US20060062917A1 (en) * 2004-05-21 2006-03-23 Shankar Muthukrishnan Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
JP2006005124A (ja) * 2004-06-17 2006-01-05 Rohm Co Ltd 半導体装置の製造方法
US7323423B2 (en) * 2004-06-30 2008-01-29 Intel Corporation Forming high-k dielectric layers on smooth substrates
US7135370B2 (en) * 2004-07-01 2006-11-14 Freescale Semiconductor, Inc. Dielectric storage memory cell having high permittivity top dielectric and method therefor
KR100539213B1 (ko) * 2004-07-10 2005-12-27 삼성전자주식회사 복합 유전막 형성 방법 및 이를 이용하는 반도체 장치의제조 방법
US7241686B2 (en) * 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
US7081421B2 (en) * 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
JP2006108439A (ja) * 2004-10-06 2006-04-20 Samsung Electronics Co Ltd 半導体装置
TWI237867B (en) * 2004-10-29 2005-08-11 Taiwan Semiconductor Mfg Method of improving to deposit dielectric
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7560352B2 (en) * 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
US7429402B2 (en) * 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US20060125030A1 (en) * 2004-12-13 2006-06-15 Micron Technology, Inc. Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics
US7235501B2 (en) * 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
KR20060072498A (ko) * 2004-12-23 2006-06-28 동부일렉트로닉스 주식회사 반도체 소자와 그의 제조방법
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7235492B2 (en) * 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7508648B2 (en) 2005-02-08 2009-03-24 Micron Technology, Inc. Atomic layer deposition of Dy doped HfO2 films as gate dielectrics
US7498247B2 (en) 2005-02-23 2009-03-03 Micron Technology, Inc. Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics
WO2006090645A1 (ja) * 2005-02-24 2006-08-31 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
JP4914573B2 (ja) * 2005-02-25 2012-04-11 キヤノンアネルバ株式会社 高誘電体ゲート絶縁膜及び金属ゲート電極を有する電界効果トランジスタの製造方法
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
GB0506896D0 (en) * 2005-04-05 2005-05-11 Plastic Logic Ltd Stack ablation
US7390756B2 (en) * 2005-04-28 2008-06-24 Micron Technology, Inc. Atomic layer deposited zirconium silicon oxide films
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7651955B2 (en) * 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20060286774A1 (en) * 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US20070040501A1 (en) * 2005-08-18 2007-02-22 Aitken Bruce G Method for inhibiting oxygen and moisture degradation of a device and the resulting device
US7829147B2 (en) 2005-08-18 2010-11-09 Corning Incorporated Hermetically sealing a device without a heat treating step and the resulting hermetically sealed device
US7722929B2 (en) * 2005-08-18 2010-05-25 Corning Incorporated Sealing technique for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device
US20080206589A1 (en) * 2007-02-28 2008-08-28 Bruce Gardiner Aitken Low tempertature sintering using Sn2+ containing inorganic materials to hermetically seal a device
US20070049043A1 (en) * 2005-08-23 2007-03-01 Applied Materials, Inc. Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement
US7402534B2 (en) * 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7544596B2 (en) * 2005-08-30 2009-06-09 Micron Technology, Inc. Atomic layer deposition of GdScO3 films as gate dielectrics
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
CN100461343C (zh) * 2005-09-28 2009-02-11 中芯国际集成电路制造(上海)有限公司 用于半导体器件的使用预处理的材料原子层沉积的方法
US20070099422A1 (en) * 2005-10-28 2007-05-03 Kapila Wijekoon Process for electroless copper deposition
US7850779B2 (en) * 2005-11-04 2010-12-14 Applied Materisals, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US7972974B2 (en) * 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
JP4983025B2 (ja) * 2006-01-17 2012-07-25 富士通セミコンダクター株式会社 半導体装置の製造方法
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US7964514B2 (en) * 2006-03-02 2011-06-21 Applied Materials, Inc. Multiple nitrogen plasma treatments for thin SiON dielectrics
US7674337B2 (en) * 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
EP2047502A4 (en) * 2006-06-30 2009-12-30 Applied Materials Inc NANOCRYSTAL FORMATION
CN101496153A (zh) * 2006-07-31 2009-07-29 应用材料股份有限公司 形成含碳外延硅层的方法
KR101369355B1 (ko) * 2006-07-31 2014-03-04 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 층 형성 동안에 형태를 제어하는 방법
US20080048178A1 (en) * 2006-08-24 2008-02-28 Bruce Gardiner Aitken Tin phosphate barrier film, method, and apparatus
US7582549B2 (en) * 2006-08-25 2009-09-01 Micron Technology, Inc. Atomic layer deposited barium strontium titanium oxide films
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
KR101427142B1 (ko) * 2006-10-05 2014-08-07 에이에스엠 아메리카, 인코포레이티드 금속 규산염 막의 원자층 증착
US7521379B2 (en) * 2006-10-09 2009-04-21 Applied Materials, Inc. Deposition and densification process for titanium nitride barrier layers
JP2008103442A (ja) * 2006-10-18 2008-05-01 Seiko Epson Corp 半導体装置の製造方法
US20080099436A1 (en) * 2006-10-30 2008-05-01 Michael Grimbergen Endpoint detection for photomask etching
US8158526B2 (en) 2006-10-30 2012-04-17 Applied Materials, Inc. Endpoint detection for photomask etching
JP5519901B2 (ja) * 2007-07-04 2014-06-11 三菱電機株式会社 炭化珪素電界効果型トランジスタ及びその製造方法
US7585762B2 (en) * 2007-09-25 2009-09-08 Applied Materials, Inc. Vapor deposition processes for tantalum carbide nitride materials
US7678298B2 (en) * 2007-09-25 2010-03-16 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US7824743B2 (en) * 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
EP2058844A1 (en) * 2007-10-30 2009-05-13 Interuniversitair Microelektronica Centrum (IMEC) Method of forming a semiconductor device
US8622308B1 (en) 2007-12-31 2014-01-07 Jpmorgan Chase Bank, N.A. System and method for processing transactions using a multi-account transactions device
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
US8945675B2 (en) 2008-05-29 2015-02-03 Asm International N.V. Methods for forming conductive titanium oxide thin films
ATE555502T1 (de) 2008-06-25 2012-05-15 Nxp Bv Steuerung des nachwachsens einer grenzflächenschicht bei einer gatestruktur mit hoher dielektrizitätskonstante für feldeffekttransistoren
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8491967B2 (en) * 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
DE102008050941A1 (de) * 2008-10-10 2010-04-22 Behr Gmbh & Co. Kg CVD-Beschichtungsverfahren, Beschichtungsvorrichtung und Bauteil einer Fluidführung
US8146896B2 (en) * 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US8557702B2 (en) 2009-02-02 2013-10-15 Asm America, Inc. Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
US8313994B2 (en) * 2009-03-26 2012-11-20 Tokyo Electron Limited Method for forming a high-K gate stack with reduced effective oxide thickness
FI20095947A0 (fi) * 2009-09-14 2009-09-14 Beneq Oy Monikerrospinnoite, menetelmä monikerrospinnoitteen valmistamiseksi, ja sen käyttötapoja
US8399344B2 (en) * 2009-10-07 2013-03-19 Asm International N.V. Method for adjusting the threshold voltage of a gate stack of a PMOS device
US8445974B2 (en) * 2010-01-07 2013-05-21 International Business Machines Corporation Asymmetric FET including sloped threshold voltage adjusting material layer and method of fabricating same
US8420208B2 (en) 2010-08-11 2013-04-16 Micron Technology, Inc. High-k dielectric material and methods of forming the high-k dielectric material
US8778204B2 (en) 2010-10-29 2014-07-15 Applied Materials, Inc. Methods for reducing photoresist interference when monitoring a target layer in a plasma process
KR101895398B1 (ko) * 2011-04-28 2018-10-25 삼성전자 주식회사 산화물 층의 형성 방법 및 이를 포함하는 반도체 소자의 제조 방법
US8961804B2 (en) 2011-10-25 2015-02-24 Applied Materials, Inc. Etch rate detection for photomask etching
US8808559B2 (en) 2011-11-22 2014-08-19 Applied Materials, Inc. Etch rate detection for reflective multi-material layers etching
US8900469B2 (en) 2011-12-19 2014-12-02 Applied Materials, Inc. Etch rate detection for anti-reflective coating layer and absorber layer etching
US9805939B2 (en) 2012-10-12 2017-10-31 Applied Materials, Inc. Dual endpoint detection for advanced phase shift and binary photomasks
US8778574B2 (en) 2012-11-30 2014-07-15 Applied Materials, Inc. Method for etching EUV material layers utilized to form a photomask
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9087716B2 (en) * 2013-07-15 2015-07-21 Globalfoundries Inc. Channel semiconductor alloy layer growth adjusted by impurity ion implantation
US9058626B1 (en) 2013-11-13 2015-06-16 Jpmorgan Chase Bank, N.A. System and method for financial services device usage
US9607829B2 (en) * 2014-02-11 2017-03-28 Tokyo Electron Limited Method of surface functionalization for high-K deposition
TW201700761A (zh) * 2015-05-13 2017-01-01 應用材料股份有限公司 經由基材的有機金屬或矽烷預處理而改良的鎢膜
KR102428659B1 (ko) 2015-08-24 2022-08-04 삼성전자주식회사 반도체 소자의 제조 방법
US9540729B1 (en) 2015-08-25 2017-01-10 Asm Ip Holding B.V. Deposition of titanium nanolaminates for use in integrated circuit fabrication
US9523148B1 (en) 2015-08-25 2016-12-20 Asm Ip Holdings B.V. Process for deposition of titanium oxynitride for use in integrated circuit fabrication
US10388515B2 (en) 2015-11-16 2019-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Treatment to control deposition rate
CN106847893B (zh) 2015-12-07 2020-05-08 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管的形成方法
KR102172190B1 (ko) * 2017-12-21 2020-10-30 인천대학교 산학협력단 컬러 전자섬유 및 이의 제조방법
US10872763B2 (en) 2019-05-03 2020-12-22 Applied Materials, Inc. Treatments to enhance material structures
US11417517B2 (en) 2019-05-03 2022-08-16 Applied Materials, Inc. Treatments to enhance material structures
US12249511B2 (en) 2019-05-03 2025-03-11 Applied Materials, Inc. Treatments to improve device performance
KR102777145B1 (ko) * 2019-10-04 2025-03-05 어플라이드 머티어리얼스, 인코포레이티드 게이트 인터페이스 엔지니어링을 위한 새로운 방법들
WO2021086788A1 (en) 2019-11-01 2021-05-06 Applied Materials, Inc. Cap oxidation for finfet formation
JP7324740B2 (ja) * 2020-11-25 2023-08-10 株式会社Kokusai Electric 基板処理方法、プログラム、基板処理装置及び半導体装置の製造方法
US12295163B2 (en) 2021-12-16 2025-05-06 Asm Ip Holding B.V. Formation of gate stacks comprising a threshold voltage tuning layer

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US6020243A (en) 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
KR100269306B1 (ko) 1997-07-31 2000-10-16 윤종용 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법
US5834353A (en) * 1997-10-20 1998-11-10 Texas Instruments-Acer Incorporated Method of making deep sub-micron meter MOSFET with a high permitivity gate dielectric
US6015739A (en) 1997-10-29 2000-01-18 Advanced Micro Devices Method of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constant
US6133106A (en) 1998-02-23 2000-10-17 Sharp Laboratories Of America, Inc. Fabrication of a planar MOSFET with raised source/drain by chemical mechanical polishing and nitride replacement
TW419732B (en) * 1998-07-15 2001-01-21 Texas Instruments Inc A method for gate-stack formation including a high-k dielectric
US6251761B1 (en) * 1998-11-24 2001-06-26 Texas Instruments Incorporated Process for polycrystalline silicon gates and high-K dielectric compatibility
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6417041B1 (en) * 1999-03-26 2002-07-09 Advanced Micro Devices, Inc. Method for fabricating high permitivity dielectric stacks having low buffer oxide
US6124158A (en) 1999-06-08 2000-09-26 Lucent Technologies Inc. Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants
US6060755A (en) * 1999-07-19 2000-05-09 Sharp Laboratories Of America, Inc. Aluminum-doped zirconium dielectric film transistor structure and deposition method for same
TW515032B (en) * 1999-10-06 2002-12-21 Samsung Electronics Co Ltd Method of forming thin film using atomic layer deposition method
US6780704B1 (en) * 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
US6348420B1 (en) 1999-12-23 2002-02-19 Asm America, Inc. Situ dielectric stacks
EP1265276B1 (en) * 2000-03-13 2011-06-22 Tadahiro Ohmi Method for forming dielectric film
KR20020001376A (ko) * 2000-06-28 2002-01-09 박종섭 반도체 소자의 알루미늄 산화막 형성 방법
US6380104B1 (en) * 2000-08-10 2002-04-30 Taiwan Semiconductor Manufacturing Company Method for forming composite gate dielectric layer equivalent to silicon oxide gate dielectric layer
US20040053472A1 (en) * 2000-09-18 2004-03-18 Hideki Kiryu Method for film formation of gate insulator, apparatus for film formation of gate insulator, and cluster tool
US6613695B2 (en) 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
US6448192B1 (en) * 2001-04-16 2002-09-10 Motorola, Inc. Method for forming a high dielectric constant material
JP2002314072A (ja) * 2001-04-19 2002-10-25 Nec Corp 高誘電体薄膜を備えた半導体装置及びその製造方法並びに誘電体膜の成膜装置
JP2002343790A (ja) * 2001-05-21 2002-11-29 Nec Corp 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法
JP2003069011A (ja) * 2001-08-27 2003-03-07 Hitachi Ltd 半導体装置とその製造方法

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WO2003041124A3 (en) 2003-11-20
WO2003041124A2 (en) 2003-05-15

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