JP4728953B2 - 多結晶Ｓｉ含有膜の堆積方法 - Google Patents

多結晶Ｓｉ含有膜の堆積方法 Download PDF

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JP4728953B2
JP4728953B2 JP2006513177A JP2006513177A JP4728953B2 JP 4728953 B2 JP4728953 B2 JP 4728953B2 JP 2006513177 A JP2006513177 A JP 2006513177A JP 2006513177 A JP2006513177 A JP 2006513177A JP 4728953 B2 JP4728953 B2 JP 4728953B2
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polycrystalline
deposition
layer
containing layer
feed gas
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JP2006524439A (ja
JP2006524439A5 (enExample
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マイケル エイ． トッド
ケイス ディー． ウイークス
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エーエスエム アメリカ インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2006513177A 2003-04-24 2004-04-21 多結晶Ｓｉ含有膜の堆積方法 Expired - Lifetime JP4728953B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/424,207 2003-04-24
US10/424,207 US7005160B2 (en) 2003-04-24 2003-04-24 Methods for depositing polycrystalline films with engineered grain structures
PCT/US2004/012239 WO2004097897A2 (en) 2003-04-24 2004-04-21 Methods for depositing polycrystalline films with engineered grain structures

Publications (3)

Publication Number Publication Date
JP2006524439A JP2006524439A (ja) 2006-10-26
JP2006524439A5 JP2006524439A5 (enExample) 2007-05-24
JP4728953B2 true JP4728953B2 (ja) 2011-07-20

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JP2006513177A Expired - Lifetime JP4728953B2 (ja) 2003-04-24 2004-04-21 多結晶Ｓｉ含有膜の堆積方法

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US (1) US7005160B2 (enExample)
JP (1) JP4728953B2 (enExample)
WO (1) WO2004097897A2 (enExample)

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US7358197B2 (en) * 2003-10-23 2008-04-15 United Microelectronics Corp. Method for avoiding polysilicon film over etch abnormal
US20060084283A1 (en) * 2004-10-20 2006-04-20 Paranjpe Ajit P Low temperature sin deposition methods
US7314796B2 (en) * 2004-12-17 2008-01-01 Macronix International Co., Ltd. Methods for reducing wordline sheet resistance
TWI262550B (en) * 2005-10-14 2006-09-21 Ind Tech Res Inst Element with a low temperature poly-Si film, method of direct poly-Si deposition at low temperature and inductively-coupled plasma chemical vapor deposition
WO2007075369A1 (en) * 2005-12-16 2007-07-05 Asm International N.V. Low temperature doped silicon layer formation
JP2009521801A (ja) * 2005-12-22 2009-06-04 エーエスエム アメリカ インコーポレイテッド ドープされた半導体物質のエピタキシャル堆積
KR100757327B1 (ko) * 2006-10-16 2007-09-11 삼성전자주식회사 불 휘발성 메모리 소자의 형성 방법
US7749802B2 (en) * 2007-01-09 2010-07-06 International Business Machines Corporation Process for chemical vapor deposition of materials with via filling capability and structure formed thereby
EP2030958B1 (en) * 2007-08-27 2013-04-10 Rohm and Haas Electronic Materials LLC Method for producing polycrystalline monolithic magnesium aluminate spinels
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JP6059085B2 (ja) * 2013-05-27 2017-01-11 東京エレクトロン株式会社 トレンチを充填する方法及び処理装置
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US10332782B2 (en) 2015-06-01 2019-06-25 Globalwafers Co., Ltd. Method of manufacturing silicon germanium-on-insulator
CN117198983A (zh) 2015-11-20 2023-12-08 环球晶圆股份有限公司 使半导体表面平整的制造方法
WO2017214084A1 (en) 2016-06-08 2017-12-14 Sunedison Semiconductor Limited High resistivity single crystal silicon ingot and wafer having improved mechanical strength
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JP7123182B2 (ja) 2018-06-08 2022-08-22 グローバルウェーハズ カンパニー リミテッド シリコン箔層の移転方法

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Also Published As

Publication number Publication date
US20040213907A1 (en) 2004-10-28
WO2004097897A2 (en) 2004-11-11
JP2006524439A (ja) 2006-10-26
US7005160B2 (en) 2006-02-28
WO2004097897A3 (en) 2005-08-04

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