JP4724901B2 - 窒化物半導体の製造方法 - Google Patents

窒化物半導体の製造方法 Download PDF

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Publication number
JP4724901B2
JP4724901B2 JP2000220454A JP2000220454A JP4724901B2 JP 4724901 B2 JP4724901 B2 JP 4724901B2 JP 2000220454 A JP2000220454 A JP 2000220454A JP 2000220454 A JP2000220454 A JP 2000220454A JP 4724901 B2 JP4724901 B2 JP 4724901B2
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Japan
Prior art keywords
barrier layer
layer
nitride semiconductor
substrate
growth
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Expired - Fee Related
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JP2000220454A
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Japanese (ja)
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JP2002043618A5 (enExample
JP2002043618A (ja
Inventor
英見 武石
英徳 亀井
修一 品川
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2000220454A priority Critical patent/JP4724901B2/ja
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Publication of JP2002043618A5 publication Critical patent/JP2002043618A5/ja
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  • Chemical Vapour Deposition (AREA)
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JP2000220454A 2000-07-21 2000-07-21 窒化物半導体の製造方法 Expired - Fee Related JP4724901B2 (ja)

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JP2000220454A JP4724901B2 (ja) 2000-07-21 2000-07-21 窒化物半導体の製造方法

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JP2000220454A JP4724901B2 (ja) 2000-07-21 2000-07-21 窒化物半導体の製造方法

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JP2002043618A JP2002043618A (ja) 2002-02-08
JP2002043618A5 JP2002043618A5 (enExample) 2007-08-30
JP4724901B2 true JP4724901B2 (ja) 2011-07-13

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9614121B1 (en) 2016-01-27 2017-04-04 Samsung Electronics Co., Ltd. Method of fabricating semiconductor light emitting device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1474824B1 (en) 2002-02-15 2016-02-10 Toyoda Gosei Co.,Ltd. Production method for group iii nitride semiconductor layer
JP2005129923A (ja) * 2003-10-02 2005-05-19 Showa Denko Kk 窒化物半導体、それを用いた発光素子、発光ダイオード、レーザー素子およびランプ並びにそれらの製造方法
WO2005034253A1 (en) * 2003-10-02 2005-04-14 Showa Denko K.K. Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof
GB2407701A (en) * 2003-10-28 2005-05-04 Sharp Kk Manufacture of a semiconductor light-emitting device
JP4619647B2 (ja) * 2003-11-28 2011-01-26 シャープ株式会社 化合物半導体装置の製造方法
JP4389723B2 (ja) 2004-02-17 2009-12-24 住友電気工業株式会社 半導体素子を形成する方法
JP4617922B2 (ja) * 2005-02-25 2011-01-26 ソニー株式会社 半導体装置の製造方法
JP2006332258A (ja) 2005-05-25 2006-12-07 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
KR100833434B1 (ko) * 2006-06-30 2008-05-29 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조 방법
JP2010021290A (ja) 2008-07-09 2010-01-28 Sumitomo Electric Ind Ltd 量子井戸構造の製造方法
JP4917585B2 (ja) 2008-08-26 2012-04-18 住友電気工業株式会社 窒化物系半導体光素子を製造する方法、及びエピタキシャルウエハを製造する方法
WO2010024436A1 (ja) 2008-08-29 2010-03-04 株式会社 東芝 半導体装置
JP2010123920A (ja) 2008-10-20 2010-06-03 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子を作製する方法、及びエピタキシャルウエハを作製する方法
JP5394717B2 (ja) * 2008-12-15 2014-01-22 日本オクラロ株式会社 窒化物半導体光素子の製造方法
JP4987994B2 (ja) * 2010-02-17 2012-08-01 株式会社東芝 窒化物半導体の結晶成長方法
JP2015115343A (ja) * 2013-12-09 2015-06-22 シャープ株式会社 窒化物半導体素子の製造方法
CN112768578B (zh) * 2021-02-07 2024-11-15 厦门乾照光电股份有限公司 一种半导体外延结构及其制作方法、led芯片

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1012922A (ja) * 1996-06-19 1998-01-16 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JP3740744B2 (ja) * 1996-07-12 2006-02-01 ソニー株式会社 半導体の成長方法
JPH1065271A (ja) * 1996-08-13 1998-03-06 Toshiba Corp 窒化ガリウム系半導体光発光素子
JP3787195B2 (ja) * 1996-09-06 2006-06-21 シャープ株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JP3304787B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
JP3679914B2 (ja) * 1997-02-12 2005-08-03 株式会社東芝 半導体発光装置及びその製造方法
JP3646502B2 (ja) * 1997-06-13 2005-05-11 豊田合成株式会社 ３族窒化物半導体素子の製造方法
JP2000049377A (ja) * 1998-07-30 2000-02-18 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子の製造方法
JP2000077783A (ja) * 1998-08-27 2000-03-14 Nec Corp インジウムを含む窒化物半導体結晶の成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9614121B1 (en) 2016-01-27 2017-04-04 Samsung Electronics Co., Ltd. Method of fabricating semiconductor light emitting device

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