JP4718463B2 - パーフルオロポリエーテルアミド連結ホスホネート、ホスフェートおよびそれらの誘導体 - Google Patents

パーフルオロポリエーテルアミド連結ホスホネート、ホスフェートおよびそれらの誘導体 Download PDF

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Publication number
JP4718463B2
JP4718463B2 JP2006523841A JP2006523841A JP4718463B2 JP 4718463 B2 JP4718463 B2 JP 4718463B2 JP 2006523841 A JP2006523841 A JP 2006523841A JP 2006523841 A JP2006523841 A JP 2006523841A JP 4718463 B2 JP4718463 B2 JP 4718463B2
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alkyl
group
formula
hydrogen
combinations
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Japanese (ja)
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JP2007502814A (ja
JP2007502814A5 (OSRAM
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エム. フライン,リチャード
ジェイ. ペルリート,マーク
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02Phosphorus compounds
    • C07F9/28Phosphorus compounds with one or more P—C bonds
    • C07F9/38Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02Phosphorus compounds
    • C07F9/28Phosphorus compounds with one or more P—C bonds
    • C07F9/38Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3808Acyclic saturated acids which can have further substituents on alkyl
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02Phosphorus compounds
    • C07F9/28Phosphorus compounds with one or more P—C bonds
    • C07F9/38Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3882Arylalkanephosphonic acids
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48Protective coatings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Paints Or Removers (AREA)
  • Detergent Compositions (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
JP2006523841A 2003-08-21 2004-07-07 パーフルオロポリエーテルアミド連結ホスホネート、ホスフェートおよびそれらの誘導体 Expired - Fee Related JP4718463B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49683703P 2003-08-21 2003-08-21
US60/496,837 2003-08-21
PCT/US2004/021713 WO2005023822A1 (en) 2003-08-21 2004-07-07 Perfluoropolyether amide-linked phosphonates, phosphates, and derivatives thereof

Publications (3)

Publication Number Publication Date
JP2007502814A JP2007502814A (ja) 2007-02-15
JP2007502814A5 JP2007502814A5 (OSRAM) 2007-08-09
JP4718463B2 true JP4718463B2 (ja) 2011-07-06

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JP2006523841A Expired - Fee Related JP4718463B2 (ja) 2003-08-21 2004-07-07 パーフルオロポリエーテルアミド連結ホスホネート、ホスフェートおよびそれらの誘導体

Country Status (8)

Country Link
US (1) US7678426B2 (OSRAM)
EP (1) EP1656385B1 (OSRAM)
JP (1) JP4718463B2 (OSRAM)
KR (1) KR20060080920A (OSRAM)
CN (1) CN100558735C (OSRAM)
AT (1) ATE346852T1 (OSRAM)
DE (1) DE602004003506T2 (OSRAM)
WO (1) WO2005023822A1 (OSRAM)

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US7189479B2 (en) * 2003-08-21 2007-03-13 3M Innovative Properties Company Phototool coating
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ITMI20051533A1 (it) * 2005-08-04 2007-02-05 Solvay Solexis Spa Usi di composti fluororurati per il trattamento protettivo di superfici in titanio
GB2432836A (en) * 2005-12-01 2007-06-06 3M Innovative Properties Co Fluorinated surfactant
US7824755B2 (en) * 2006-06-29 2010-11-02 3M Innovative Properties Company Fluorinated leveling agents
JP5385146B2 (ja) * 2006-10-20 2014-01-08 スリーエム イノベイティブ プロパティズ カンパニー 易洗浄基材のための方法及びそれによる物品
CN101563383B (zh) * 2006-12-20 2012-08-15 3M创新有限公司 具有侧链甲硅烷基的含氟氨基甲酸酯化合物
KR20100017848A (ko) * 2007-05-23 2010-02-16 쓰리엠 이노베이티브 프로퍼티즈 컴파니 플루오르화 계면활성제의 수성 조성물 및 그의 사용 방법
EP2444428B1 (en) 2007-06-06 2013-07-24 3M Innovative Properties Company Fluorinated compositions and surface treatments made therefrom
CN101679572A (zh) * 2007-06-06 2010-03-24 3M创新有限公司 氟化组合物和由其制成的表面处理剂
CN101679569A (zh) * 2007-06-06 2010-03-24 3M创新有限公司 氟化醚组合物以及使用该组合物的方法
US20080315459A1 (en) * 2007-06-21 2008-12-25 3M Innovative Properties Company Articles and methods for replication of microstructures and nanofeatures
US20090114618A1 (en) * 2007-06-21 2009-05-07 3M Innovative Properties Company Method of making hierarchical articles
US20090041986A1 (en) * 2007-06-21 2009-02-12 3M Innovative Properties Company Method of making hierarchical articles
US7891636B2 (en) * 2007-08-27 2011-02-22 3M Innovative Properties Company Silicone mold and use thereof
US8115920B2 (en) * 2007-11-14 2012-02-14 3M Innovative Properties Company Method of making microarrays
US8071277B2 (en) * 2007-12-21 2011-12-06 3M Innovative Properties Company Method and system for fabricating three-dimensional structures with sub-micron and micron features
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KR20100101635A (ko) * 2007-12-31 2010-09-17 쓰리엠 이노베이티브 프로퍼티즈 컴파니 코팅성 물질의 도포방법
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BRPI0910075A2 (pt) * 2008-03-26 2015-12-29 3M Innovative Properties Co métodos para aplicar dois ou mais fluidos como um revestimento de deslizamento
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WO2010009191A2 (en) * 2008-07-18 2010-01-21 3M Innovative Properties Company Fluorinated ether compounds and methods of using the same
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CN102301277B (zh) 2008-12-05 2013-07-17 3M创新有限公司 使用非线性热聚合的三维制品
EP2370269B1 (en) * 2008-12-11 2015-08-05 3M Innovative Properties Company Patterning process
US8629089B2 (en) 2008-12-18 2014-01-14 3M Innovative Properties Company Method of contacting hydrocarbon-bearing formations with fluorinated ether compositions
MX2011006673A (es) * 2008-12-18 2011-07-20 3M Innovative Properties Co Metodo para poner en contacto formaciones que contienen hidrocarburos con posiciones de fosfatos y fosfonatos fluorados.
MX2012000413A (es) 2009-07-09 2012-02-08 3M Innovative Prosperties Company Metodos para tratar con compuestos anfotericos fluorados a las formaciones de carbonato que poseen hidrocarburos.
CN102597116B (zh) * 2009-07-21 2013-12-11 3M创新有限公司 可固化组合物、涂覆底片的方法、以及被涂覆的底片
US9051423B2 (en) 2009-09-16 2015-06-09 3M Innovative Properties Company Fluorinated coating and phototools made therewith
US8268067B2 (en) 2009-10-06 2012-09-18 3M Innovative Properties Company Perfluoropolyether coating composition for hard surfaces
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CN103180353B (zh) * 2010-11-04 2016-02-17 3M创新有限公司 包含含磷酸基团和烷氧基硅烷基团的氟化组合物
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US10534120B2 (en) 2015-04-03 2020-01-14 Moxtek, Inc. Wire grid polarizer with protected wires
JP6488890B2 (ja) * 2015-06-03 2019-03-27 信越化学工業株式会社 フルオロオキシアルキレン基含有ポリマー変性ホスホン酸誘導体、該誘導体を含む表面処理剤、該表面処理剤で処理された物品及び光学物品
JP6520419B2 (ja) * 2015-06-04 2019-05-29 信越化学工業株式会社 フルオロオキシアルキレン基含有ポリマー変性ホスホン酸誘導体及び該誘導体を含む表面処理剤、該表面処理剤で処理された物品及び光学物品
CN108137798B (zh) * 2015-10-09 2020-06-09 信越化学工业株式会社 含有氟代氧化亚烷基的聚合物改性膦酸衍生物、以及对应的表面处理剂和表面处理方法
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CN113549211B (zh) * 2021-06-04 2024-01-26 广州优尔材料科技有限公司 含全氟聚醚的磷酸化合物、表面处理剂及物品
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Also Published As

Publication number Publication date
JP2007502814A (ja) 2007-02-15
EP1656385A1 (en) 2006-05-17
DE602004003506D1 (de) 2007-01-11
US20050048288A1 (en) 2005-03-03
CN1839141A (zh) 2006-09-27
KR20060080920A (ko) 2006-07-11
US7678426B2 (en) 2010-03-16
CN100558735C (zh) 2009-11-11
ATE346852T1 (de) 2006-12-15
DE602004003506T2 (de) 2007-09-20
WO2005023822A1 (en) 2005-03-17
EP1656385B1 (en) 2006-11-29

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