JP4711645B2 - 固体撮像素子およびその製造方法 - Google Patents

固体撮像素子およびその製造方法 Download PDF

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Publication number
JP4711645B2
JP4711645B2 JP2004188404A JP2004188404A JP4711645B2 JP 4711645 B2 JP4711645 B2 JP 4711645B2 JP 2004188404 A JP2004188404 A JP 2004188404A JP 2004188404 A JP2004188404 A JP 2004188404A JP 4711645 B2 JP4711645 B2 JP 4711645B2
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Japan
Prior art keywords
film
solid
electrode
imaging device
state imaging
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Expired - Fee Related
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JP2004188404A
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English (en)
Japanese (ja)
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JP2006013146A (ja
JP2006013146A5 (enExample
Inventor
洋介 中橋
浩昭 高尾
誠 雫石
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Fujifilm Corp
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Fujifilm Corp
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Publication date
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Priority to JP2004188404A priority Critical patent/JP4711645B2/ja
Priority to US11/159,367 priority patent/US7233037B2/en
Publication of JP2006013146A publication Critical patent/JP2006013146A/ja
Publication of JP2006013146A5 publication Critical patent/JP2006013146A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
JP2004188404A 2004-06-25 2004-06-25 固体撮像素子およびその製造方法 Expired - Fee Related JP4711645B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004188404A JP4711645B2 (ja) 2004-06-25 2004-06-25 固体撮像素子およびその製造方法
US11/159,367 US7233037B2 (en) 2004-06-25 2005-06-23 Solid state imaging device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004188404A JP4711645B2 (ja) 2004-06-25 2004-06-25 固体撮像素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2006013146A JP2006013146A (ja) 2006-01-12
JP2006013146A5 JP2006013146A5 (enExample) 2007-04-26
JP4711645B2 true JP4711645B2 (ja) 2011-06-29

Family

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Family Applications (1)

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JP2004188404A Expired - Fee Related JP4711645B2 (ja) 2004-06-25 2004-06-25 固体撮像素子およびその製造方法

Country Status (2)

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US (1) US7233037B2 (enExample)
JP (1) JP4711645B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013460A (ja) * 2004-05-21 2006-01-12 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法および固体撮像素子
JP2007048894A (ja) * 2005-08-09 2007-02-22 Fujifilm Corp 固体撮像素子およびその製造方法
JP2007048893A (ja) * 2005-08-09 2007-02-22 Fujifilm Corp 固体撮像素子およびその製造方法
KR101319870B1 (ko) * 2006-01-05 2013-10-18 엘지전자 주식회사 이동 통신 시스템에서의 핸드오버 방법
EP1980062A4 (en) 2006-01-05 2011-03-30 Lg Electronics Inc TRANSFER OF DATA IN A MOBILE COMMUNICATION SYSTEM
KR101203841B1 (ko) * 2006-01-05 2012-11-21 엘지전자 주식회사 무선 통신 시스템에서의 페이징 메시지 전송 및 수신 방법
KR101265628B1 (ko) * 2006-01-05 2013-05-22 엘지전자 주식회사 이동 통신 시스템에서의 무선 자원 스케줄링 방법
KR101187076B1 (ko) 2006-01-05 2012-09-27 엘지전자 주식회사 이동 통신 시스템에 있어서 신호 전송 방법
US9456455B2 (en) * 2006-01-05 2016-09-27 Lg Electronics Inc. Method of transmitting feedback information in a wireless communication system
CN105515736A (zh) 2006-01-05 2016-04-20 Lg电子株式会社 在移动通信系统中发送数据
JP2007194499A (ja) * 2006-01-20 2007-08-02 Fujifilm Corp 固体撮像素子およびその製造方法
KR101387475B1 (ko) * 2006-03-22 2014-04-22 엘지전자 주식회사 복수의 네트워크 엔터티를 포함하는 이동 통신시스템에서의 데이터 처리 방법
EP2618517B1 (en) 2006-06-21 2023-08-02 LG Electronics Inc. Method of supporting data retransmission in a mobile communication system
US7973271B2 (en) * 2006-12-08 2011-07-05 Sony Corporation Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
JP5136110B2 (ja) * 2008-02-19 2013-02-06 ソニー株式会社 固体撮像装置の製造方法
JP2010177599A (ja) * 2009-01-30 2010-08-12 Panasonic Corp 固体撮像装置及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2508221B2 (ja) * 1987-11-17 1996-06-19 三菱電機株式会社 電荷転送素子の製造方法
JPH05343440A (ja) * 1992-06-09 1993-12-24 Mitsubishi Electric Corp 電荷転送素子およびその製造方法
JPH05343439A (ja) * 1992-06-09 1993-12-24 Mitsubishi Electric Corp 電荷転送素子およびその製造方法
JPH08274302A (ja) 1995-04-03 1996-10-18 Sharp Corp ラテラル型ホトサイリスタおよびその製造方法
US5817562A (en) * 1997-01-24 1998-10-06 Taiwan Semiconductor Manufacturing Company, Ltd Method for making improved polysilicon FET gate electrode structures and sidewall spacers for more reliable self-aligned contacts (SAC)
JP3937297B2 (ja) * 2001-11-22 2007-06-27 ソニー株式会社 固体撮像素子の製造方法
US6656840B2 (en) * 2002-04-29 2003-12-02 Applied Materials Inc. Method for forming silicon containing layers on a substrate
JP2004103616A (ja) * 2002-09-04 2004-04-02 Fuji Film Microdevices Co Ltd 固体撮像素子およびその製造方法
JP4314005B2 (ja) * 2002-09-27 2009-08-12 富士フイルム株式会社 固体撮像素子およびその製造方法
JP2004335801A (ja) * 2003-05-08 2004-11-25 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法
JP2005209714A (ja) * 2004-01-20 2005-08-04 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法
KR100719338B1 (ko) * 2004-06-15 2007-05-17 삼성전자주식회사 이미지 센서 및 그 형성 방법

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JP2006013146A (ja) 2006-01-12
US7233037B2 (en) 2007-06-19
US20060011953A1 (en) 2006-01-19

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