JP4704703B2 - アレイ型半導体レーザ装置 - Google Patents
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- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H01S5/00—Semiconductor lasers
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
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- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P
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Description
ストライプ状電極は幅80μmで間隔を20μmとした。図9は前記半導体レーザチップをサブマウントに固定する時の仕様を示したものである。半導体レーザチップ116は表面(結晶成長を行った面)側を下向きの状態でサブマウントに固定する。半導体レーザチップの位置を確定した後、サブマウントを半田の溶融温度まで加熱して半導体レーザチップをサブマウントに固定する。サブマウントの電極及び半田のパタンと半導体レーザチップの第2電極113及び通電孔112の位置関係は図9のような配置になっている。
窒化アルミニウム膜111は半田と融着することはないが、窒化アルミニウム111上に形成された第2電極113は半田と合金化するので、半導体レーザチップ116は15箇所で物理的に固定される。さらに、この電極は熱伝導率の高い窒化アルミニウム膜及窒化シリコン膜を通して通電によりストライプ状導波路で発生した熱をサブマウントに逃がす働きももつ。第1電極110の上に夫々1箇所形成されている通電孔112の部分では第2電極113から通電孔112を経由して第1電極110に電流が流れて導波路全域に電流が供給される。作製した半導体レーザの5個のレーザ共振器はそれぞれ波長約650nmで発振し、しきい値電流は約10mAであった。第2電極による放熱効果によりこの半導体レーザのドループ特性やクロストーク特性は3%以下の良好な値を示し、レーザプリンタや光ディスク装置での使用に好適な値を示した。
作製した半導体レーザの5個のレーザ共振器はそれぞれ波長約780nmで発振し、しきい値電流は約10mAであった。半田層と融着した低融点ガラスの放熱効果によりこの半導体レーザのドループ特性やクロストーク特性は3%以下の良好な値を示し、レーザプリンタや光ディスク装置での使用に好適な値を示した。
101…n型GaAs基板、102…n型(Al0.7Ga0.3)0.5In0.5Pクラッド層、103…多重量子井戸活性層、104…p型(Al0.7Ga0.3)0.5In0.5Pクラッド層、105…p型GaAsキャップ層、106…Ga0.5In0.5Pウエル層、107…(Al0.5Ga0.5)0.5In0.5Pバリア層、108…ストライプ状領域、109…窒化シリコン膜、110…第1電極、111…窒化アルニウム膜、112…通電孔、113…第2電極、114…裏面電極、115…ミラー面、116…半導体レーザチップ、117…窒化アルミニウム基板、118…電極層、119…半田層、120…ストライプ状電極、121…ボンディングパット、201…n型GaAs基板、202…n型Al0.7Ga0.3Asクラッド層、203…多重量子井戸活性層、204…p型Al0.7Ga0.3Asクラッド層、205…Ga0.5Al0.5Asウエル層、206…Al0.7Ga0.3Asバリア層、207…酸化シリコン膜、208…ダイヤモンド膜、209…低融点ガラス、401…酸化亜鉛、402…拡散領域、403…非拡散領域。
Claims (4)
- 通電により発光する光共振器が複数形成された半導体チップをサブマウント上に搭載したアレイ型半導体レーザ装置であって、
前記半導体チップは、半導体基板上に所定の間隔をもってストライプ状に形成された複数の光共振器と、
前記ストライプの方向に、前記光共振器を覆うように形成され、互いに電気的に分離された第1の電極と、
前記第1の電極を覆うように形成された絶縁膜と、
前記絶縁膜を介して前記光共振器を覆うように形成された低融点ガラス層とを具備し、
通電をすべく光共振器上の前記絶縁膜および前記低融点ガラス層の一部を選択的に除去し開口部を設けることにより前記第1の電極が露出された通電孔を形成し、該通電孔の少なくとも一部が前記サブマウント上に形成された複数のサブマウント電極の一に電気的に接続されるように該通電孔を配置することを特徴とするアレイ型半導体レーザ装置。 - 前記絶縁膜は、少なくともSiN、AlNまたはダイヤモンドのいずれか一つから選択された材料からなることを特徴とする請求項1に記載のアレイ型半導体レーザ装置。
- 前記サブマウント電極は、金属膜と半田層を含む積層膜からなることを特徴とする請求項1に記載のアレイ型半導体レーザ装置。
- 前記光共振器の少なくとも一部は、レーザ光に対し吸収を持たない透明導波路により構成されていることを特徴とする請求項1に記載のアレイ型半導体レーザ装置。
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Application Number | Priority Date | Filing Date | Title |
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JP2004200076A JP4704703B2 (ja) | 2004-07-07 | 2004-07-07 | アレイ型半導体レーザ装置 |
US11/174,621 US7564886B2 (en) | 2004-07-07 | 2005-07-06 | Semiconductor laser diode array |
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JP2004200076A JP4704703B2 (ja) | 2004-07-07 | 2004-07-07 | アレイ型半導体レーザ装置 |
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JP2006024665A JP2006024665A (ja) | 2006-01-26 |
JP4704703B2 true JP4704703B2 (ja) | 2011-06-22 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4965354B2 (ja) * | 2007-06-20 | 2012-07-04 | 株式会社リコー | 半導体レーザ装置、光書込器およびプリンタ装置 |
JP4933370B2 (ja) | 2007-07-17 | 2012-05-16 | 株式会社リコー | アレイ型半導体レーザ装置の組み立て方法 |
JP4697488B2 (ja) * | 2008-08-22 | 2011-06-08 | ソニー株式会社 | マルチビーム半導体レーザ |
CN107910747A (zh) * | 2017-12-12 | 2018-04-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | 多脊型半导体激光器及其制作方法 |
Citations (6)
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JPS58122472U (ja) * | 1982-02-15 | 1983-08-20 | 沖電気工業株式会社 | レ−ザダイオ−ドアレイ |
JPS63248190A (ja) * | 1987-04-02 | 1988-10-14 | Nec Corp | 半導体レ−ザ |
JPH02170143A (ja) * | 1988-12-23 | 1990-06-29 | Nippon Telegr & Teleph Corp <Ntt> | 光増幅素子 |
JPH0563288A (ja) * | 1991-05-31 | 1993-03-12 | Shimadzu Corp | 量子井戸型広ストライプ半導体レーザ |
JPH05283796A (ja) * | 1992-03-31 | 1993-10-29 | Sony Corp | 面発光型半導体レーザ |
JPH11330604A (ja) * | 1998-05-08 | 1999-11-30 | Sony Corp | 光電変換素子およびその製造方法 |
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JPS63318188A (ja) * | 1987-06-19 | 1988-12-27 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPH0697583A (ja) | 1992-09-16 | 1994-04-08 | Hitachi Ltd | 半導体レーザ素子及び半導体レーザ装置 |
JP3222635B2 (ja) | 1993-06-29 | 2001-10-29 | 三菱電機株式会社 | 半導体レーザ装置およびその実装方法 |
US6744800B1 (en) * | 1998-12-30 | 2004-06-01 | Xerox Corporation | Method and structure for nitride based laser diode arrays on an insulating substrate |
JP4457427B2 (ja) * | 1999-03-18 | 2010-04-28 | ソニー株式会社 | 半導体発光装置とその製造方法 |
JP4150511B2 (ja) * | 2001-05-16 | 2008-09-17 | 株式会社日立製作所 | 半導体レ−ザ装置 |
DE10136743B4 (de) * | 2001-07-27 | 2013-02-14 | Epcos Ag | Verfahren zur hermetischen Verkapselung eines Bauelementes |
JP2004014943A (ja) * | 2002-06-10 | 2004-01-15 | Sony Corp | マルチビーム型半導体レーザ、半導体発光素子および半導体装置 |
TWI303909B (en) * | 2002-11-25 | 2008-12-01 | Nichia Corp | Ridge waveguide semiconductor laser diode |
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2004
- 2004-07-07 JP JP2004200076A patent/JP4704703B2/ja not_active Expired - Fee Related
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2005
- 2005-07-06 US US11/174,621 patent/US7564886B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58122472U (ja) * | 1982-02-15 | 1983-08-20 | 沖電気工業株式会社 | レ−ザダイオ−ドアレイ |
JPS63248190A (ja) * | 1987-04-02 | 1988-10-14 | Nec Corp | 半導体レ−ザ |
JPH02170143A (ja) * | 1988-12-23 | 1990-06-29 | Nippon Telegr & Teleph Corp <Ntt> | 光増幅素子 |
JPH0563288A (ja) * | 1991-05-31 | 1993-03-12 | Shimadzu Corp | 量子井戸型広ストライプ半導体レーザ |
JPH05283796A (ja) * | 1992-03-31 | 1993-10-29 | Sony Corp | 面発光型半導体レーザ |
JPH11330604A (ja) * | 1998-05-08 | 1999-11-30 | Sony Corp | 光電変換素子およびその製造方法 |
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