JP4671802B2 - めっき方法、半導体装置の製造方法及び回路基板の製造方法 - Google Patents
めっき方法、半導体装置の製造方法及び回路基板の製造方法 Download PDFInfo
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- JP4671802B2 JP4671802B2 JP2005235229A JP2005235229A JP4671802B2 JP 4671802 B2 JP4671802 B2 JP 4671802B2 JP 2005235229 A JP2005235229 A JP 2005235229A JP 2005235229 A JP2005235229 A JP 2005235229A JP 4671802 B2 JP4671802 B2 JP 4671802B2
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Description
本発明の第1実施形態によるめっき方法及びそのめっき方法を用いた半導体装置の製造方法を、図2乃至図13及び図29を用いて説明する。図2乃至図12は、本実施形態による半導体装置の製造方法を示す工程図である。図2乃至図6及び図8乃至図12は断面図であり、図7は平面図である。
本発明の第2実施形態による回路基板の製造方法を図14乃至図23を用いて説明する。図14乃至図23は、本実施形態による回路基板の製造方法を示す工程図である。図1乃至図12に示す第1実施形態によるめっき方法及び半導体装置の製造方法と同一の構成要素には、同一の符号を付して説明を省略または簡潔にする。
図18(a)に示すように、樹脂層84aの表面には、凹凸14が形成されている。
本発明の第3実施形態による回路基板の製造方法を図24及び図25を用いて説明する。図24及び図25は、本実施形態による回路基板の製造方法を示す工程断面図である。図1乃至図23に示す第1又は第2実施形態によるめっき方法、半導体装置の製造方法又は回路基板の製造方法と同一の構成要素には、同一の符号を付して説明を省略または簡潔にする。
本発明の第4実施形態による回路基板の製造方法を図26乃至図28を用いて説明する。図26乃至図28は、本実施形態による回路基板の製造方法を示す工程図である。図1乃至図25に示す第1乃至第3実施形態によるめっき方法、半導体装置の製造方法及び回路基板の製造方法と同一の構成要素には、同一の符号を付して説明を省略または簡潔にする。
本発明の第5実施形態による半導体装置の製造方法を図30乃至図37を用いて説明する。図30乃至図37は、本実施形態による半導体装置の製造方法を示す工程図である。
本発明の第6実施形態による半導体装置の製造方法を図38乃至図46を用いて説明する。図38乃至図46は、本実施形態による半導体装置の製造方法を示す工程図である。
図41(b)は、図41(a)の円S内を拡大して表した図である。図41(b)に示すように、樹脂層180aの表面には、凹凸14が形成されている。
本発明は上記実施形態に限らず種々の変形が可能である。
支持基板上に樹脂層を形成する工程と、
前記樹脂層の表層部をバイトにより切削する工程と、
前記樹脂層上に無電解めっき法によりシード層を形成する工程と、
前記シード層上に電気めっき法によりめっき膜を形成する工程と
を有することを特徴とするめっき方法。
支持基板上に樹脂層を形成する工程と、
前記樹脂層の表面における十点平均粗さが0.5〜5μmとなるように、前記樹脂層の表層部をバイトにより切削する工程と、
前記樹脂層上にシード層を形成する工程と、
前記シード層上に電気めっき法によりめっき膜を形成する工程と
を有することを特徴とするめっき方法。
付記2記載のめっき方法において、
前記樹脂層を形成する工程では、樹脂シートを前記支持基板上に貼り付けることにより、前記樹脂シートより成る樹脂層を形成する
ことを特徴とするめっき方法。
付記2又は3記載のめっき方法において、
前記バイトは、ダイヤモンドより成る
ことを特徴とするめっき方法。
付記2乃至4のいずれかに記載のめっき方法において、
前記シード層を形成する工程では、無電解めっき法又はスパッタ法により前記シード層を形成する
ことを特徴とするめっき方法。
付記2乃至5のいずれかに記載のめっき方法において、
前記樹脂層の厚さは、前記支持基板の面内における厚さの最大値と最小値との差より大きい
ことを特徴とするめっき方法。
付記2乃至6のいずれかに記載のめっき方法において、
前記シード層は、銅又はニッケルより成る
ことを特徴とするめっき方法。
半導体基板上に樹脂層を形成する工程と、
前記樹脂層の表面における十点平均粗さが0.5〜5μmとなるように、前記樹脂層の表層部をバイトにより切削する工程と、
前記樹脂層上にシード層を形成する工程と、
前記シード層上に電気めっき法によりめっき膜より成る配線を形成する工程と
を有することを特徴とする半導体装置の製造方法。
付記8記載の半導体装置の製造方法において、
前記樹脂層を形成する工程の前に、前記半導体基板上に導体プラグを形成する工程を更に有し、
前記樹脂層を形成する工程では、前記導体プラグを埋め込むように前記樹脂層を形成し、
前記樹脂層の表層部を切削する工程では、前記導体プラグの上部をも前記バイトにより切削し、
前記シード層を形成する工程では、前記導体プラグ上にも前記シード層を形成する
ことを特徴とする半導体装置の製造方法。
付記8記載の半導体装置の製造方法において、
前記樹脂層を形成する工程の前に、ボールボンディングによりバンプ電極を形成する工程とを更に有し、
前記樹脂層を形成する工程では、前記バンプ電極を埋め込むように前記樹脂層を形成し、
前記樹脂層の表層部を切削する工程では、前記バンプ電極の上部をも前記バイトにより切削し、
前記シード層を形成する工程では、前記バンプ電極上にも前記シード層を形成する
ことを特徴とする半導体装置の製造方法。
付記8記載の半導体装置の製造方法において、
前記樹脂層を形成する工程の前に、前記半導体基板上に半導体チップを実装する工程と;前記半導体基板上に、前記半導体チップの上面より上方に突出するように、ボールボンディングによりワイヤ電極を形成し、前記半導体チップ上にボールボンディングによりバンプ電極を形成する電極形成工程とを更に有し、
前記樹脂層を形成する工程では、前記ワイヤ電極及び前記バンプ電極を埋め込むように前記樹脂層を形成し、
前記樹脂層の表層部を切削する工程では、前記ワイヤ電極の上部及び前記バンプ電極の上部をも前記バイトにより切削し、
前記シード層を形成する工程では、前記ワイヤ電極上及び前記バンプ電極上にも前記シード層を形成する
ことを特徴とする半導体装置の製造方法。
支持基板上に樹脂層を形成する工程と、
前記樹脂層の表面における十点平均粗さが0.5〜5μmとなるように、前記樹脂層の表層部をバイトにより切削する工程と、
前記樹脂層上にシード層を形成する工程と、
前記シード層上に電気めっき法により配線を形成する工程と
を有することを特徴とする回路基板の製造方法。
支持基板と、前記支持基板上に形成された下部電極と;前記下部電極上に形成された誘電体膜と;前記誘電体膜上に形成された上部電極とを有するキャパシタとを有する回路基板の製造方法であって、
支持基板上に下部電極を形成する工程と、
少なくとも前記下部電極上に樹脂を含む誘電体膜を形成する工程と、
前記誘電体膜の表面における十点平均粗さが0.5〜5μmとなるように、前記誘電体膜の表層部をバイトにより切削する工程と、
前記誘電体膜上にシード層を形成する工程と、
前記シード層上に電気めっき法により上部電極を形成する工程と
を有することを特徴とする回路基板の製造方法。
付記13記載の回路基板の製造方法において、
前記誘電体膜の表層部を切削する工程では、前記下部電極上に存在する前記誘電体膜の厚さが5μm以下となるように、前記誘電体膜の表層部を切削する
ことを特徴とする回路基板の製造方法。
付記13又は14記載の回路基板の製造方法において、
前記誘電体膜は、前記樹脂より比誘電率の高い材料より成るフィラーを更に含む
ことを特徴とする回路基板の製造方法。
付記15記載の回路基板の製造方法において、
前記フィラーは、CaTiO3、BaTiO3、SrTiO3、ZnTiO3、PbTiO3、CaZrO3、BaZrO3、PbZrO3、BaXSr1−XTiO3、BaTiXZr1−XO3、PbZrXTi1−XO3、PbXLa1−XZrYTi1−YO3、La2Ti2O7及びNd2Ti2O7のうちのいずれか、又はこれらの混合物より成る
ことを特徴とする回路基板の製造方法。
支持基板と、前記支持基板上に形成された第1の電極と、前記第1の電極上に形成された抵抗器と、前記抵抗器上に形成された第2の電極とを有する回路基板の製造方法であって、
支持基板上に、第1の電極を形成する工程と、
前記第1の電極上に、前記樹脂を含む抵抗層を形成する工程と、
前記抵抗層の表面における十点平均粗さが0.5〜5μmとなるように、前記抵抗層の表層部を切削する工程と、
前記抵抗層上にシード層を形成する工程と、
前記シード層上に電気めっき法により電極を形成する工程と
を有することを特徴とする回路基板の製造方法。
付記17記載の回路基板の製造方法において、
前記抵抗層は、導電体より成るフィラーを含む
ことを特徴とする回路基板の製造方法。
付記18記載の回路基板の製造方法において、
前記フィラーは、炭素、炭化珪素及びニッケル−クロム合金のうちのいずれか、又は、これらの混合物より成る
ことを特徴とする回路基板の製造方法。
支持基板と、前記支持基板上に形成されたインダクタとを有する回路基板の製造方法であって、
支持基板上に樹脂を含む絶縁層を形成する工程と、
前記絶縁層の表面における十点平均粗さが0.5〜5μmとなるように、前記絶縁層の表層部をバイトにより切削する工程と、
前記絶縁層上にシード層を形成する工程と、
前記シード層上にインダクタを電気めっき法により形成する工程と
を有することを特徴とする回路基板の製造方法。
付記20記載の回路基板の製造方法において、
前記絶縁層は、前記樹脂より透磁率の高い材料より成るフィラーを更に含む
ことを特徴とする回路基板の製造方法。
付記21記載の回路基板の製造方法において、
前記フィラーは、Mn−Zn系フェライト及びNi−Zn系フェライトのうちのいずれか、又は、これらの混合物より成る
ことを特徴とする回路基板の製造方法。
10…樹脂層(加工前の樹脂フィルム)
10a…樹脂層(切削後の樹脂層)
12…バイト
14…凹凸
16…半導体基板
18…層間絶縁膜
20…導体プラグ
22…シード層
24…フォトレジスト膜
26…開口部
28…配線
30…フォトレジスト膜
32…開口部
34…導体プラグ
36…シード層
38…触媒
40…フォトレジスト膜
42…開口部
44…配線
46…フォトレジスト膜
48…開口部
50…導体プラグ
51…樹脂フィルム
52…樹脂層
53…凹凸
54…配線
56…コア層
58…支持基板
60…配線
62…絶縁層
64…貫通孔
66…導電膜
68…ビア
70…導電膜
72…樹脂層
74…コンタクトホール
76…配線
78…樹脂層
80…コンタクトホール
82…下部電極
83…樹脂フィルム
84…樹脂層(加工前の樹脂フィルム)
84a…樹脂層(切削後の樹脂層)、誘電体膜
88…シード層
90…上部電極
92…キャパシタ
94…樹脂層
96…コンタクトホール
98…配線
100…導体プラグ
102…樹脂層
104…配線
106…導体プラグ
108…樹脂層
110…配線
111…樹脂フィルム
112…樹脂層(加工前の樹脂フィルム)
112a…樹脂層(切削後の樹脂層)、抵抗層
113…樹脂フィルム
114…樹脂層(加工前の樹脂フィルム)
114a…樹脂層(切削後の樹脂層)、高透磁率層
116…インダクタ
118…配線
120…半導体基板
120a…半導体チップ
122…絶縁膜
124…開口部
126…電極パッド
128…バンプ電極、スタッドバンプ
130…樹脂フィルム
132…樹脂層(加工前の樹脂フィルム)
132a…樹脂層(切削後の樹脂層)
134…超精密旋盤
136…チャックテーブル
138…シード層
140…フォトレジスト膜
142…開口部
144…配線
146…フォトレジスト膜
148…開口部
150…導体プラグ
152…樹脂フィルム
154…樹脂層(加工前の樹脂フィルム)
154a…樹脂層(切削後の樹脂層)
156…半田バンプ
158…半導体基板
158a…半導体チップ
160…層間絶縁膜
162a、162b…開口部
164a…電極パッド
164b…ダミーパッド
166…半導体チップ
167…接着層
168…層間絶縁膜
170…開口部
172…電極パッド
174…ワイヤ電極
174a…ボール
174b…ワイヤ
176…バンプ電極、スタッドバンプ
178…樹脂フィルム
180…樹脂層(加工前の樹脂フィルム)
180a…樹脂層(切削後の樹脂層)
182…シード層
184…フォトレジスト膜
186…開口部
188…配線
190…フォトレジスト膜
192…開口部
194…導体プラグ
196…樹脂フィルム
198…樹脂層(加工前の樹脂フィルム)
198a…樹脂層(切削後の樹脂層)
200…半田バンプ
Claims (9)
- 支持基板上に樹脂層を形成する工程と、
前記支持基板を回転させながら、前記樹脂層の表面に対して垂直な面と、バイトの刃先の進行方向の前面とのなす角度を0度〜30度として、前記樹脂層の表面における十点平均粗さが0.5〜5μmとなるように、前記樹脂層の表層部を前記バイトにより切削する工程と、
前記樹脂層上にシード層を形成する工程と、
前記シード層上に電気めっき法によりめっき膜を形成する工程と
を有することを特徴とするめっき方法。 - 請求項1記載のめっき方法において、
前記シード層を形成する工程では、無電解めっき法又はスパッタ法により前記シード層を形成する
ことを特徴とするめっき方法。 - 半導体基板上に樹脂層を形成する工程と、
前記半導体基板を回転させながら、前記樹脂層の表面に対して垂直な面と、バイトの刃先の進行方向の前面とのなす角度を0度〜30度として、前記樹脂層の表面における十点平均粗さが0.5〜5μmとなるように、前記樹脂層の表層部を前記バイトにより切削する工程と、
前記樹脂層上にシード層を形成する工程と、
前記シード層上に電気めっき法によりめっき膜より成る配線を形成する工程と
を有することを特徴とする半導体装置の製造方法。 - 支持基板上に樹脂層を形成する工程と、
前記支持基板を回転させながら、前記樹脂層の表面に対して垂直な面と、バイトの刃先の進行方向の前面とのなす角度を0度〜30度として、前記樹脂層の表面における十点平均粗さが0.5〜5μmとなるように、前記樹脂層の表層部を前記バイトにより切削する工程と、
前記樹脂層上にシード層を形成する工程と、
前記シード層上に電気めっき法により配線を形成する工程と
を有することを特徴とする回路基板の製造方法。 - 支持基板と、前記支持基板上に形成された下部電極と;前記下部電極上に形成された誘電体膜と;前記誘電体膜上に形成された上部電極とを有するキャパシタとを有する回路基板の製造方法であって、
支持基板上に下部電極を形成する工程と、
少なくとも前記下部電極上に樹脂を含む誘電体膜を形成する工程と、
前記支持基板を回転させながら、前記誘電体膜の表面に対して垂直な面と、バイトの刃先の進行方向の前面とのなす角度を0度〜30度として、前記誘電体膜の表面における十点平均粗さが0.5〜5μmとなるように、前記誘電体膜の表層部を前記バイトにより切削する工程と、
前記誘電体膜上にシード層を形成する工程と、
前記シード層上に電気めっき法により上部電極を形成する工程と
を有することを特徴とする回路基板の製造方法。 - 支持基板と、前記支持基板上に形成された第1の電極と、前記第1の電極上に形成された抵抗器と、前記抵抗器上に形成された第2の電極とを有する回路基板の製造方法であって、
支持基板上に、第1の電極を形成する工程と、
前記第1の電極上に、樹脂を含む抵抗層を形成する工程と、
前記支持基板を回転させながら、前記抵抗層の表面に対して垂直な面と、バイトの刃先の進行方向の前面とのなす角度を0度〜30度として、前記抵抗層の表面における十点平均粗さが0.5〜5μmとなるように、前記抵抗層の表層部を前記バイトにより切削する工程と、
前記抵抗層上にシード層を形成する工程と、
前記シード層上に電気めっき法により電極を形成する工程と
を有することを特徴とする回路基板の製造方法。 - 請求項6記載の回路基板の製造方法において、
前記抵抗層は、導電体より成るフィラーを含む
ことを特徴とする回路基板の製造方法。 - 支持基板と、前記支持基板上に形成されたインダクタとを有する回路基板の製造方法であって、
支持基板上に樹脂を含む絶縁層を形成する工程と、
前記支持基板を回転させながら、前記絶縁層の表面に対して垂直な面と、バイトの刃先の進行方向の前面とのなす角度を0度〜30度として、前記絶縁層の表面における十点平均粗さが0.5〜5μmとなるように、前記絶縁層の表層部を前記バイトにより切削する工程と、
前記絶縁層上にシード層を形成する工程と、
前記シード層上にインダクタを電気めっき法により形成する工程と
を有することを特徴とする回路基板の製造方法。 - 請求項8記載の回路基板の製造方法において、
前記絶縁層は、前記樹脂より透磁率の高い材料より成るフィラーを更に含む
ことを特徴とする回路基板の製造方法。
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US11/250,399 US7670940B2 (en) | 2004-10-18 | 2005-10-17 | Plating method, semiconductor device fabrication method and circuit board fabrication method |
US12/684,570 US7927998B2 (en) | 2004-10-18 | 2010-01-08 | Plating method, semiconductor device fabrication method and circuit board fabrication method |
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