JP4662075B2 - 薄膜トランジスタ及びその製造方法 - Google Patents

薄膜トランジスタ及びその製造方法 Download PDF

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Publication number
JP4662075B2
JP4662075B2 JP2007023767A JP2007023767A JP4662075B2 JP 4662075 B2 JP4662075 B2 JP 4662075B2 JP 2007023767 A JP2007023767 A JP 2007023767A JP 2007023767 A JP2007023767 A JP 2007023767A JP 4662075 B2 JP4662075 B2 JP 4662075B2
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Japan
Prior art keywords
film
channel layer
thin film
film transistor
electrode
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JP2007023767A
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Japanese (ja)
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JP2008192721A5 (enExample
JP2008192721A (ja
Inventor
修 椎野
芳典 岩淵
良 櫻井
竜也 船木
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Bridgestone Corp
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Bridgestone Corp
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Application filed by Bridgestone Corp filed Critical Bridgestone Corp
Priority to JP2007023767A priority Critical patent/JP4662075B2/ja
Priority to CN200880006112.0A priority patent/CN101622714B/zh
Priority to EP08704196A priority patent/EP2110855A4/en
Priority to PCT/JP2008/051433 priority patent/WO2008093741A1/ja
Priority to US12/525,448 priority patent/US8026506B2/en
Publication of JP2008192721A publication Critical patent/JP2008192721A/ja
Publication of JP2008192721A5 publication Critical patent/JP2008192721A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007023767A 2007-02-02 2007-02-02 薄膜トランジスタ及びその製造方法 Expired - Fee Related JP4662075B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007023767A JP4662075B2 (ja) 2007-02-02 2007-02-02 薄膜トランジスタ及びその製造方法
CN200880006112.0A CN101622714B (zh) 2007-02-02 2008-01-30 薄膜晶体管及其制造方法
EP08704196A EP2110855A4 (en) 2007-02-02 2008-01-30 THIN FILM TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF
PCT/JP2008/051433 WO2008093741A1 (ja) 2007-02-02 2008-01-30 薄膜トランジスタ及びその製造方法
US12/525,448 US8026506B2 (en) 2007-02-02 2008-01-30 Thin-film transistor with channel layer formed by metal oxide film including indium, and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007023767A JP4662075B2 (ja) 2007-02-02 2007-02-02 薄膜トランジスタ及びその製造方法

Publications (3)

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JP2008192721A JP2008192721A (ja) 2008-08-21
JP2008192721A5 JP2008192721A5 (enExample) 2010-03-18
JP4662075B2 true JP4662075B2 (ja) 2011-03-30

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JP2007023767A Expired - Fee Related JP4662075B2 (ja) 2007-02-02 2007-02-02 薄膜トランジスタ及びその製造方法

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US (1) US8026506B2 (enExample)
EP (1) EP2110855A4 (enExample)
JP (1) JP4662075B2 (enExample)
CN (1) CN101622714B (enExample)
WO (1) WO2008093741A1 (enExample)

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CN113471299A (zh) * 2021-07-27 2021-10-01 厦门大学 一种薄膜晶体管及其制备方法

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KR102195170B1 (ko) 2009-03-12 2020-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20120037897A1 (en) 2009-04-17 2012-02-16 Bridgestone Corporation Thin film transistor and method for manufacturing thin film transistor
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JP2010251604A (ja) * 2009-04-17 2010-11-04 Bridgestone Corp 薄膜トランジスタの製造方法
KR20210043743A (ko) 2009-12-04 2021-04-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
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JP5966840B2 (ja) 2012-10-11 2016-08-10 住友金属鉱山株式会社 酸化物半導体薄膜および薄膜トランジスタ
JP6107085B2 (ja) * 2012-11-22 2017-04-05 住友金属鉱山株式会社 酸化物半導体薄膜および薄膜トランジスタ
US9543447B2 (en) 2013-03-08 2017-01-10 Sumitomo Metal Mining Co., Ltd. Oxynitride semiconductor thin film
JP6298662B2 (ja) * 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
WO2014181777A1 (ja) 2013-05-09 2014-11-13 独立行政法人物質・材料研究機構 薄膜トランジスタおよびその製造方法
JP6255813B2 (ja) * 2013-09-06 2018-01-10 住友電気工業株式会社 酸化物焼結体および半導体デバイス
KR20150105527A (ko) 2014-03-06 2015-09-17 삼성디스플레이 주식회사 산화물 스퍼터링 타겟 및 이를 이용한 박막 트랜지스터
JP6015699B2 (ja) * 2014-03-24 2016-10-26 トヨタ自動車株式会社 車両の制御装置
JP6119773B2 (ja) 2014-03-25 2017-04-26 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
JP6357664B2 (ja) * 2014-09-22 2018-07-18 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
KR101816468B1 (ko) 2014-10-22 2018-01-08 스미토모덴키고교가부시키가이샤 산화물 소결체 및 반도체 디바이스
US10192994B2 (en) 2015-01-26 2019-01-29 Sumitomo Electric Industries, Ltd. Oxide semiconductor film including indium, tungsten and zinc and thin film transistor device
WO2016129146A1 (ja) 2015-02-13 2016-08-18 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
JP6308191B2 (ja) 2015-09-16 2018-04-11 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
CN105789279A (zh) * 2016-03-11 2016-07-20 深圳市华星光电技术有限公司 薄膜晶体管、液晶显示面板及薄膜晶体管的制备方法
RU167501U1 (ru) * 2016-06-14 2017-01-10 Федеральное государственное бюджетное образовательное учреждение высшего образования "Воронежский государственный технический университет" (ВГТУ) Тонкопленочный прозрачный полевой транзистор
JP6593268B2 (ja) 2016-07-25 2019-10-23 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
KR102406137B1 (ko) 2016-11-04 2022-06-10 스미토모덴키고교가부시키가이샤 산화물 소결체 및 그 제조 방법, 스퍼터 타겟, 그리고 반도체 디바이스의 제조 방법
KR102401708B1 (ko) 2017-02-20 2022-05-26 스미토모덴키고교가부시키가이샤 산화물 소결체 및 그의 제조 방법, 스퍼터 타겟, 그리고 반도체 디바이스의 제조 방법
JP7024774B2 (ja) 2017-02-20 2022-02-24 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
WO2018211724A1 (ja) 2017-05-16 2018-11-22 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、酸化物半導体膜、ならびに半導体デバイスの製造方法
JP2019114609A (ja) * 2017-12-21 2019-07-11 日本放送協会 薄膜トランジスタおよびその製造方法
CN108766972B (zh) 2018-05-11 2021-10-22 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示基板
CN109285893A (zh) * 2018-10-29 2019-01-29 佛山科学技术学院 一种同质结薄膜晶体管
CN111081873A (zh) * 2019-11-18 2020-04-28 天津大学 一种高透明度柔性薄膜晶体管及制作方法
KR20210124844A (ko) * 2020-04-07 2021-10-15 삼성전자주식회사 강유전층을 포함하는 전자 소자 및 그 제조 방법
TWI805116B (zh) 2021-12-07 2023-06-11 國立陽明交通大學 垂直堆疊型互補式薄膜電晶體
CN115274833A (zh) * 2022-08-03 2022-11-01 电子科技大学 全透明薄膜晶体管器件及其制备方法

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US20100025680A1 (en) 2010-02-04
CN101622714A (zh) 2010-01-06
WO2008093741A1 (ja) 2008-08-07
EP2110855A1 (en) 2009-10-21
CN101622714B (zh) 2011-12-07
US8026506B2 (en) 2011-09-27
JP2008192721A (ja) 2008-08-21
EP2110855A4 (en) 2010-02-24

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