JP2008192721A5 - - Google Patents
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- Publication number
- JP2008192721A5 JP2008192721A5 JP2007023767A JP2007023767A JP2008192721A5 JP 2008192721 A5 JP2008192721 A5 JP 2008192721A5 JP 2007023767 A JP2007023767 A JP 2007023767A JP 2007023767 A JP2007023767 A JP 2007023767A JP 2008192721 A5 JP2008192721 A5 JP 2008192721A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- channel layer
- indium
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 15
- 239000010409 thin film Substances 0.000 claims 12
- 229910044991 metal oxide Inorganic materials 0.000 claims 9
- 150000004706 metal oxides Chemical class 0.000 claims 9
- 229910052738 indium Inorganic materials 0.000 claims 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 7
- 229910003437 indium oxide Inorganic materials 0.000 claims 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 4
- 229910001882 dioxygen Inorganic materials 0.000 claims 4
- 238000004544 sputter deposition Methods 0.000 claims 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 229910052718 tin Inorganic materials 0.000 claims 3
- 239000011135 tin Substances 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 239000010937 tungsten Substances 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 206010021143 Hypoxia Diseases 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007023767A JP4662075B2 (ja) | 2007-02-02 | 2007-02-02 | 薄膜トランジスタ及びその製造方法 |
| US12/525,448 US8026506B2 (en) | 2007-02-02 | 2008-01-30 | Thin-film transistor with channel layer formed by metal oxide film including indium, and method of manufacturing the same |
| CN200880006112.0A CN101622714B (zh) | 2007-02-02 | 2008-01-30 | 薄膜晶体管及其制造方法 |
| PCT/JP2008/051433 WO2008093741A1 (ja) | 2007-02-02 | 2008-01-30 | 薄膜トランジスタ及びその製造方法 |
| EP08704196A EP2110855A4 (en) | 2007-02-02 | 2008-01-30 | THIN FILM TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007023767A JP4662075B2 (ja) | 2007-02-02 | 2007-02-02 | 薄膜トランジスタ及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008192721A JP2008192721A (ja) | 2008-08-21 |
| JP2008192721A5 true JP2008192721A5 (enExample) | 2010-03-18 |
| JP4662075B2 JP4662075B2 (ja) | 2011-03-30 |
Family
ID=39674048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007023767A Expired - Fee Related JP4662075B2 (ja) | 2007-02-02 | 2007-02-02 | 薄膜トランジスタ及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8026506B2 (enExample) |
| EP (1) | EP2110855A4 (enExample) |
| JP (1) | JP4662075B2 (enExample) |
| CN (1) | CN101622714B (enExample) |
| WO (1) | WO2008093741A1 (enExample) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5480554B2 (ja) * | 2008-08-08 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102094683B1 (ko) * | 2008-09-19 | 2020-03-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
| KR101048996B1 (ko) * | 2009-01-12 | 2011-07-12 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터 및 그를 구비하는 평판 표시 장치 |
| US8174021B2 (en) * | 2009-02-06 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
| DE102009009337A1 (de) * | 2009-02-17 | 2010-08-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung |
| KR102068632B1 (ko) | 2009-03-12 | 2020-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| KR20120004526A (ko) * | 2009-04-17 | 2012-01-12 | 가부시키가이샤 브리지스톤 | 박막 트랜지스터 및 박막 트랜지스터의 제조 방법 |
| JP2010251606A (ja) * | 2009-04-17 | 2010-11-04 | Bridgestone Corp | 薄膜トランジスタ |
| JP2010251604A (ja) * | 2009-04-17 | 2010-11-04 | Bridgestone Corp | 薄膜トランジスタの製造方法 |
| EP2507822B1 (en) | 2009-12-04 | 2016-08-31 | Semiconductor Energy Laboratory Co. Ltd. | Manufacturing method of semiconductor device |
| KR101804589B1 (ko) * | 2009-12-11 | 2018-01-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| WO2011074407A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8969867B2 (en) * | 2012-01-18 | 2015-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN202549848U (zh) | 2012-04-28 | 2012-11-21 | 京东方科技集团股份有限公司 | 显示装置、阵列基板和薄膜晶体管 |
| WO2013187486A1 (ja) * | 2012-06-14 | 2013-12-19 | 独立行政法人物質・材料研究機構 | 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置 |
| JP5966840B2 (ja) | 2012-10-11 | 2016-08-10 | 住友金属鉱山株式会社 | 酸化物半導体薄膜および薄膜トランジスタ |
| JP6107085B2 (ja) * | 2012-11-22 | 2017-04-05 | 住友金属鉱山株式会社 | 酸化物半導体薄膜および薄膜トランジスタ |
| JP6036984B2 (ja) | 2013-03-08 | 2016-11-30 | 住友金属鉱山株式会社 | 酸窒化物半導体薄膜 |
| JP6298662B2 (ja) * | 2013-03-14 | 2018-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6120386B2 (ja) | 2013-05-09 | 2017-04-26 | 国立研究開発法人物質・材料研究機構 | 薄膜トランジスタおよびその製造方法 |
| JP6255813B2 (ja) * | 2013-09-06 | 2018-01-10 | 住友電気工業株式会社 | 酸化物焼結体および半導体デバイス |
| KR20150105527A (ko) | 2014-03-06 | 2015-09-17 | 삼성디스플레이 주식회사 | 산화물 스퍼터링 타겟 및 이를 이용한 박막 트랜지스터 |
| JP6015699B2 (ja) * | 2014-03-24 | 2016-10-26 | トヨタ自動車株式会社 | 車両の制御装置 |
| JP6119773B2 (ja) | 2014-03-25 | 2017-04-26 | 住友電気工業株式会社 | 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス |
| JP6357664B2 (ja) * | 2014-09-22 | 2018-07-18 | 株式会社Ｊｏｌｅｄ | 薄膜トランジスタ及びその製造方法 |
| US10087517B2 (en) | 2014-10-22 | 2018-10-02 | Sumitomo Electric Industries, Ltd. | Oxide sintered body and semiconductor device |
| EP3101692A1 (en) | 2015-01-26 | 2016-12-07 | Sumitomo Electric Industries, Ltd. | Oxide semiconductor film and semiconductor device |
| WO2016129146A1 (ja) | 2015-02-13 | 2016-08-18 | 住友電気工業株式会社 | 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス |
| JP6308191B2 (ja) | 2015-09-16 | 2018-04-11 | 住友電気工業株式会社 | 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法 |
| CN105789279A (zh) * | 2016-03-11 | 2016-07-20 | 深圳市华星光电技术有限公司 | 薄膜晶体管、液晶显示面板及薄膜晶体管的制备方法 |
| RU167501U1 (ru) * | 2016-06-14 | 2017-01-10 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Воронежский государственный технический университет" (ВГТУ) | Тонкопленочный прозрачный полевой транзистор |
| JP6593268B2 (ja) | 2016-07-25 | 2019-10-23 | 住友電気工業株式会社 | 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法 |
| US10894744B2 (en) | 2016-11-04 | 2021-01-19 | Sumitomo Electric Industries, Ltd. | Oxide sintered material and method for manufacturing the same, sputtering target, and method for manufacturing semiconductor device |
| JP7024774B2 (ja) | 2017-02-20 | 2022-02-24 | 住友電気工業株式会社 | 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法 |
| KR102401708B1 (ko) | 2017-02-20 | 2022-05-26 | 스미토모덴키고교가부시키가이샤 | 산화물 소결체 및 그의 제조 방법, 스퍼터 타겟, 그리고 반도체 디바이스의 제조 방법 |
| WO2018211724A1 (ja) | 2017-05-16 | 2018-11-22 | 住友電気工業株式会社 | 酸化物焼結体およびその製造方法、スパッタターゲット、酸化物半導体膜、ならびに半導体デバイスの製造方法 |
| JP2019114609A (ja) * | 2017-12-21 | 2019-07-11 | 日本放送協会 | 薄膜トランジスタおよびその製造方法 |
| CN108766972B (zh) | 2018-05-11 | 2021-10-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、显示基板 |
| CN109285893A (zh) * | 2018-10-29 | 2019-01-29 | 佛山科学技术学院 | 一种同质结薄膜晶体管 |
| CN111081873A (zh) * | 2019-11-18 | 2020-04-28 | 天津大学 | 一种高透明度柔性薄膜晶体管及制作方法 |
| KR20210124844A (ko) * | 2020-04-07 | 2021-10-15 | 삼성전자주식회사 | 강유전층을 포함하는 전자 소자 및 그 제조 방법 |
| CN113471299B (zh) * | 2021-07-27 | 2023-06-20 | 厦门大学 | 一种薄膜晶体管及其制备方法 |
| TWI805116B (zh) | 2021-12-07 | 2023-06-11 | 國立陽明交通大學 | 垂直堆疊型互補式薄膜電晶體 |
| CN115274833A (zh) * | 2022-08-03 | 2022-11-01 | 电子科技大学 | 全透明薄膜晶体管器件及其制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333603B1 (en) * | 2000-06-19 | 2001-12-25 | Sunplus Technology Co., Ltd. | Organic light emission device display module |
| US7189992B2 (en) | 2002-05-21 | 2007-03-13 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures having a transparent channel |
| US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| US7145174B2 (en) * | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| JP2005268724A (ja) * | 2004-03-22 | 2005-09-29 | Sony Corp | 電子素子およびその製造方法 |
| US7211825B2 (en) * | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
| US7829444B2 (en) * | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| US20090090914A1 (en) * | 2005-11-18 | 2009-04-09 | Koki Yano | Semiconductor thin film, method for producing the same, and thin film transistor |
-
2007
- 2007-02-02 JP JP2007023767A patent/JP4662075B2/ja not_active Expired - Fee Related
-
2008
- 2008-01-30 EP EP08704196A patent/EP2110855A4/en not_active Ceased
- 2008-01-30 CN CN200880006112.0A patent/CN101622714B/zh not_active Expired - Fee Related
- 2008-01-30 US US12/525,448 patent/US8026506B2/en not_active Expired - Fee Related
- 2008-01-30 WO PCT/JP2008/051433 patent/WO2008093741A1/ja not_active Ceased
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