JP4608040B2 - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

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Publication number
JP4608040B2
JP4608040B2 JP21691699A JP21691699A JP4608040B2 JP 4608040 B2 JP4608040 B2 JP 4608040B2 JP 21691699 A JP21691699 A JP 21691699A JP 21691699 A JP21691699 A JP 21691699A JP 4608040 B2 JP4608040 B2 JP 4608040B2
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layer
layers
dopant
laser device
refractive index
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JP21691699A
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Japanese (ja)
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JP2000077772A5 (enExample
JP2000077772A (ja
Inventor
ホンユ・デン
シャオツォン・ワン
チュン・レイ
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アバゴ・テクノロジーズ・ファイバー・アイピー（シンガポール）プライベート・リミテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP21691699A 1998-08-31 1999-07-30 半導体レーザ装置 Expired - Fee Related JP4608040B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US144,355 1998-08-31
US09/144,355 US6301281B1 (en) 1998-08-31 1998-08-31 Semiconductor laser having co-doped distributed bragg reflectors

Publications (3)

Publication Number Publication Date
JP2000077772A JP2000077772A (ja) 2000-03-14
JP2000077772A5 JP2000077772A5 (enExample) 2006-09-21
JP4608040B2 true JP4608040B2 (ja) 2011-01-05

Family

ID=22508224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21691699A Expired - Fee Related JP4608040B2 (ja) 1998-08-31 1999-07-30 半導体レーザ装置

Country Status (7)

Country Link
US (1) US6301281B1 (enExample)
JP (1) JP4608040B2 (enExample)
KR (1) KR100647934B1 (enExample)
DE (2) DE19964244C2 (enExample)
GB (1) GB2341275B (enExample)
SG (1) SG84522A1 (enExample)
TW (1) TW410495B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6560265B2 (en) * 2001-09-11 2003-05-06 Applied Optoelectronics, Inc. Method and apparatus for polarizing light in a VCSEL
JP4066654B2 (ja) * 2001-12-19 2008-03-26 富士ゼロックス株式会社 面発光型半導体レーザ装置及びその製造方法
US6850548B2 (en) 2001-12-28 2005-02-01 Finisar Corporation Assymmetric distributed Bragg reflector for vertical cavity surface emitting lasers
DE10262373B3 (de) * 2002-04-30 2013-01-17 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Co-Dotierung
DE10219345B4 (de) * 2002-04-30 2011-05-19 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Co-Dotierung
US6931045B1 (en) 2002-08-12 2005-08-16 Sandia Corporation Distributed Bragg reflectors with reduced optical absorption
US20060215720A1 (en) * 2005-03-24 2006-09-28 Corzine Scott W Quantum cascade laser with grating formed by a periodic variation in doping
KR101228108B1 (ko) * 2005-11-09 2013-01-31 삼성전자주식회사 펌프 빔 반사층을 갖는 외부 공진기형 면발광 레이저
JP2010114214A (ja) * 2008-11-05 2010-05-20 Fuji Xerox Co Ltd 面発光型半導体レーザ素子、面発光型半導体レーザ素子の製造方法、および光送信装置
AT511270B1 (de) 2012-05-24 2015-07-15 Avl List Gmbh Verfahren und eine Vorrichtung zur Prüfung von elektrischen Energiespeichersystemen für den Antrieb von Fahrzeugen
CN109462143A (zh) * 2018-09-30 2019-03-12 中科芯电半导体科技（北京）有限公司 一种应用于vcsel中的dbr生长方法、分布式布拉格反射镜和垂直腔面发射激光器
KR20200049026A (ko) 2018-10-31 2020-05-08 엘지이노텍 주식회사 표면발광 레이저소자 및 이를 포함하는 발광장치
CN118630577A (zh) * 2024-08-13 2024-09-10 深圳技术大学 基于相变材料超透镜阵列的可控变焦距激光器
CN119403314B (zh) * 2025-01-02 2025-04-22 南昌凯迅光电股份有限公司 一种红光led外延片及其制备方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688388A (en) * 1979-12-19 1981-07-17 Matsushita Electric Ind Co Ltd Semiconductor laser device
US5018157A (en) 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5115442A (en) * 1990-04-13 1992-05-19 At&T Bell Laboratories Top-emitting surface emitting laser structures
EP0495301A1 (en) 1990-12-14 1992-07-22 AT&T Corp. Method for making a semiconductor laser
US5208820A (en) 1991-01-08 1993-05-04 Nec Corporation Optical device with low-resistive multi-level reflecting structure
US5226055A (en) * 1991-09-30 1993-07-06 At&T Bell Laboratories Devices having repetitive layers
US5170407A (en) * 1991-10-11 1992-12-08 At&T Bell Laboratories Elimination of heterojunction band discontinuities
US5212703A (en) * 1992-02-18 1993-05-18 Eastman Kodak Company Surface emitting lasers with low resistance bragg reflectors
US5212701A (en) * 1992-03-25 1993-05-18 At&T Bell Laboratories Semiconductor surface emitting laser having enhanced optical confinement
US5351257A (en) * 1993-03-08 1994-09-27 Motorola, Inc. VCSEL with vertical offset operating region providing a lateral waveguide and current limiting and method of fabrication
JP3668979B2 (ja) * 1993-08-31 2005-07-06 ソニー株式会社 光電子集積回路装置の製造方法
US5513202A (en) * 1994-02-25 1996-04-30 Matsushita Electric Industrial Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
JPH07249581A (ja) * 1994-03-09 1995-09-26 Fujitsu Ltd Ｉｉｉ −ｖ族化合物半導体結晶成長法
DE19523181A1 (de) * 1994-07-05 1996-01-11 Motorola Inc Verfahren zum P-Dotieren einer Licht emittierenden Vorrichtung
US5530715A (en) * 1994-11-29 1996-06-25 Motorola, Inc. Vertical cavity surface emitting laser having continuous grading
JP3645343B2 (ja) * 1994-12-28 2005-05-11 三井化学株式会社 半導体レーザ素子
CA2208999C (en) * 1994-12-28 2001-02-13 Tsuyoshi Fujimoto Semiconductor laser device
US5574744A (en) * 1995-02-03 1996-11-12 Motorola Optical coupler
US5568499A (en) 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
US5557627A (en) * 1995-05-19 1996-09-17 Sandia Corporation Visible-wavelength semiconductor lasers and arrays
US5724376A (en) 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
US5706306A (en) * 1996-03-15 1998-01-06 Motorola VCSEL with distributed Bragg reflectors for visible light
JPH09260770A (ja) * 1996-03-22 1997-10-03 Nippon Telegr & Teleph Corp <Ntt> 面発光レーザ
JPH10173294A (ja) * 1996-10-07 1998-06-26 Canon Inc 窒素を含む化合物半導体多層膜ミラー及びそれを用いた面型発光デバイス
EP0865124B1 (en) * 1997-03-12 2003-01-22 BRITISH TELECOMMUNICATIONS public limited company Mirrors for VCSEL
JPH10261839A (ja) * 1997-03-19 1998-09-29 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜及びその製造方法
JP3245545B2 (ja) * 1997-05-07 2002-01-15 シャープ株式会社 Ｉｉｉ−ｖ族化合物半導体発光素子
DE19723677A1 (de) * 1997-06-05 1998-12-10 Siemens Ag Optoelektronisches Halbleiterbauelement
GB2333895B (en) 1998-01-31 2003-02-26 Mitel Semiconductor Ab Pre-fusion oxidized and wafer-bonded vertical cavity laser

Also Published As

Publication number Publication date
DE19919382A1 (de) 2000-03-09
GB9920420D0 (en) 1999-11-03
SG84522A1 (en) 2001-11-20
TW410495B (en) 2000-11-01
DE19919382C2 (de) 2002-04-25
GB2341275A (en) 2000-03-08
US6301281B1 (en) 2001-10-09
DE19964244C2 (de) 2002-05-16
KR100647934B1 (ko) 2006-11-17
JP2000077772A (ja) 2000-03-14
KR20000017638A (ko) 2000-03-25
GB2341275B (en) 2003-08-13

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