JP2000077772A5 - - Google Patents

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Publication number
JP2000077772A5
JP2000077772A5 JP1999216916A JP21691699A JP2000077772A5 JP 2000077772 A5 JP2000077772 A5 JP 2000077772A5 JP 1999216916 A JP1999216916 A JP 1999216916A JP 21691699 A JP21691699 A JP 21691699A JP 2000077772 A5 JP2000077772 A5 JP 2000077772A5
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JP
Japan
Prior art keywords
layer
refractive index
semiconductor
iii
semiconductor compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999216916A
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English (en)
Japanese (ja)
Other versions
JP4608040B2 (ja
JP2000077772A (ja
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Publication date
Priority claimed from US09/144,355 external-priority patent/US6301281B1/en
Application filed filed Critical
Publication of JP2000077772A publication Critical patent/JP2000077772A/ja
Publication of JP2000077772A5 publication Critical patent/JP2000077772A5/ja
Application granted granted Critical
Publication of JP4608040B2 publication Critical patent/JP4608040B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP21691699A 1998-08-31 1999-07-30 半導体レーザ装置 Expired - Fee Related JP4608040B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US144,355 1998-08-31
US09/144,355 US6301281B1 (en) 1998-08-31 1998-08-31 Semiconductor laser having co-doped distributed bragg reflectors

Publications (3)

Publication Number Publication Date
JP2000077772A JP2000077772A (ja) 2000-03-14
JP2000077772A5 true JP2000077772A5 (enExample) 2006-09-21
JP4608040B2 JP4608040B2 (ja) 2011-01-05

Family

ID=22508224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21691699A Expired - Fee Related JP4608040B2 (ja) 1998-08-31 1999-07-30 半導体レーザ装置

Country Status (7)

Country Link
US (1) US6301281B1 (enExample)
JP (1) JP4608040B2 (enExample)
KR (1) KR100647934B1 (enExample)
DE (2) DE19964244C2 (enExample)
GB (1) GB2341275B (enExample)
SG (1) SG84522A1 (enExample)
TW (1) TW410495B (enExample)

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US6560265B2 (en) * 2001-09-11 2003-05-06 Applied Optoelectronics, Inc. Method and apparatus for polarizing light in a VCSEL
JP4066654B2 (ja) * 2001-12-19 2008-03-26 富士ゼロックス株式会社 面発光型半導体レーザ装置及びその製造方法
US6850548B2 (en) 2001-12-28 2005-02-01 Finisar Corporation Assymmetric distributed Bragg reflector for vertical cavity surface emitting lasers
DE10262373B3 (de) * 2002-04-30 2013-01-17 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Co-Dotierung
DE10219345B4 (de) * 2002-04-30 2011-05-19 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Co-Dotierung
US6931045B1 (en) 2002-08-12 2005-08-16 Sandia Corporation Distributed Bragg reflectors with reduced optical absorption
US20060215720A1 (en) * 2005-03-24 2006-09-28 Corzine Scott W Quantum cascade laser with grating formed by a periodic variation in doping
KR101228108B1 (ko) * 2005-11-09 2013-01-31 삼성전자주식회사 펌프 빔 반사층을 갖는 외부 공진기형 면발광 레이저
JP2010114214A (ja) * 2008-11-05 2010-05-20 Fuji Xerox Co Ltd 面発光型半導体レーザ素子、面発光型半導体レーザ素子の製造方法、および光送信装置
AT511270B1 (de) 2012-05-24 2015-07-15 Avl List Gmbh Verfahren und eine Vorrichtung zur Prüfung von elektrischen Energiespeichersystemen für den Antrieb von Fahrzeugen
CN109462143A (zh) * 2018-09-30 2019-03-12 中科芯电半导体科技（北京）有限公司 一种应用于vcsel中的dbr生长方法、分布式布拉格反射镜和垂直腔面发射激光器
KR20200049026A (ko) 2018-10-31 2020-05-08 엘지이노텍 주식회사 표면발광 레이저소자 및 이를 포함하는 발광장치
CN118630577A (zh) * 2024-08-13 2024-09-10 深圳技术大学 基于相变材料超透镜阵列的可控变焦距激光器
CN119403314B (zh) * 2025-01-02 2025-04-22 南昌凯迅光电股份有限公司 一种红光led外延片及其制备方法

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JPS5688388A (en) * 1979-12-19 1981-07-17 Matsushita Electric Ind Co Ltd Semiconductor laser device
US5018157A (en) 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5115442A (en) * 1990-04-13 1992-05-19 At&T Bell Laboratories Top-emitting surface emitting laser structures
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US5208820A (en) 1991-01-08 1993-05-04 Nec Corporation Optical device with low-resistive multi-level reflecting structure
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US5212701A (en) * 1992-03-25 1993-05-18 At&T Bell Laboratories Semiconductor surface emitting laser having enhanced optical confinement
US5351257A (en) * 1993-03-08 1994-09-27 Motorola, Inc. VCSEL with vertical offset operating region providing a lateral waveguide and current limiting and method of fabrication
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JPH07249581A (ja) * 1994-03-09 1995-09-26 Fujitsu Ltd Ｉｉｉ −ｖ族化合物半導体結晶成長法
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JP3645343B2 (ja) * 1994-12-28 2005-05-11 三井化学株式会社 半導体レーザ素子
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US5706306A (en) * 1996-03-15 1998-01-06 Motorola VCSEL with distributed Bragg reflectors for visible light
JPH09260770A (ja) * 1996-03-22 1997-10-03 Nippon Telegr & Teleph Corp <Ntt> 面発光レーザ
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EP0865124B1 (en) * 1997-03-12 2003-01-22 BRITISH TELECOMMUNICATIONS public limited company Mirrors for VCSEL
JPH10261839A (ja) * 1997-03-19 1998-09-29 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜及びその製造方法
JP3245545B2 (ja) * 1997-05-07 2002-01-15 シャープ株式会社 Ｉｉｉ−ｖ族化合物半導体発光素子
DE19723677A1 (de) * 1997-06-05 1998-12-10 Siemens Ag Optoelektronisches Halbleiterbauelement
GB2333895B (en) 1998-01-31 2003-02-26 Mitel Semiconductor Ab Pre-fusion oxidized and wafer-bonded vertical cavity laser

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