JP2000277852A5 - - Google Patents
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- Publication number
- JP2000277852A5 JP2000277852A5 JP1999079670A JP7967099A JP2000277852A5 JP 2000277852 A5 JP2000277852 A5 JP 2000277852A5 JP 1999079670 A JP1999079670 A JP 1999079670A JP 7967099 A JP7967099 A JP 7967099A JP 2000277852 A5 JP2000277852 A5 JP 2000277852A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- surface emitting
- mirror
- emitting semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 9
- 238000002310 reflectometry Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical group [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical group [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11079670A JP2000277852A (ja) | 1999-03-24 | 1999-03-24 | 表面発光型半導体レーザ、及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11079670A JP2000277852A (ja) | 1999-03-24 | 1999-03-24 | 表面発光型半導体レーザ、及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000277852A JP2000277852A (ja) | 2000-10-06 |
| JP2000277852A5 true JP2000277852A5 (enExample) | 2004-09-09 |
Family
ID=13696628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11079670A Pending JP2000277852A (ja) | 1999-03-24 | 1999-03-24 | 表面発光型半導体レーザ、及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000277852A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6905900B1 (en) * | 2000-11-28 | 2005-06-14 | Finisar Corporation | Versatile method and system for single mode VCSELs |
| EP1648060B1 (en) * | 2004-10-14 | 2008-07-23 | Samsung Electronics Co.,Ltd. | Funnel structure vertical external cavity surface-emitting laser (VECSEL) |
| JP5376104B2 (ja) * | 2005-07-04 | 2013-12-25 | ソニー株式会社 | 面発光型半導体レーザ |
| JP5279393B2 (ja) * | 2008-07-31 | 2013-09-04 | キヤノン株式会社 | 面発光レーザおよびその製造方法、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器 |
| JP5510899B2 (ja) * | 2009-09-18 | 2014-06-04 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置、及び画像形成装置 |
| JP2014086565A (ja) * | 2012-10-24 | 2014-05-12 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
| US9837792B2 (en) * | 2016-03-07 | 2017-12-05 | Epistar Corporation | Light-emitting device |
| JP6990499B2 (ja) | 2016-04-18 | 2022-01-12 | スタンレー電気株式会社 | 垂直共振器型発光素子及び垂直共振型発光素子の製造方法 |
| CN118541886A (zh) * | 2022-01-27 | 2024-08-23 | 三菱电机株式会社 | 光半导体装置 |
| CN116646815A (zh) * | 2023-03-27 | 2023-08-25 | 中国科学院半导体研究所 | 激光器及其制备方法 |
-
1999
- 1999-03-24 JP JP11079670A patent/JP2000277852A/ja active Pending
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