JP2002252409A5 - - Google Patents
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- Publication number
- JP2002252409A5 JP2002252409A5 JP2002040228A JP2002040228A JP2002252409A5 JP 2002252409 A5 JP2002252409 A5 JP 2002252409A5 JP 2002040228 A JP2002040228 A JP 2002040228A JP 2002040228 A JP2002040228 A JP 2002040228A JP 2002252409 A5 JP2002252409 A5 JP 2002252409A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- type layer
- resonance
- semiconductor laser
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 claims 22
- 239000004065 semiconductor Substances 0.000 claims 22
- 238000005530 etching Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 4
- 238000003776 cleavage reaction Methods 0.000 claims 3
- 230000007017 scission Effects 0.000 claims 3
- 238000000034 method Methods 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002040228A JP4370751B2 (ja) | 2002-02-18 | 2002-02-18 | 窒化物半導体レーザ素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002040228A JP4370751B2 (ja) | 2002-02-18 | 2002-02-18 | 窒化物半導体レーザ素子及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33388496A Division JP3476636B2 (ja) | 1996-12-13 | 1996-12-13 | 窒化物半導体レーザ素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002252409A JP2002252409A (ja) | 2002-09-06 |
| JP2002252409A5 true JP2002252409A5 (enExample) | 2004-11-25 |
| JP4370751B2 JP4370751B2 (ja) | 2009-11-25 |
Family
ID=19192685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002040228A Expired - Fee Related JP4370751B2 (ja) | 2002-02-18 | 2002-02-18 | 窒化物半導体レーザ素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4370751B2 (enExample) |
-
2002
- 2002-02-18 JP JP2002040228A patent/JP4370751B2/ja not_active Expired - Fee Related
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