JP4370751B2 - 窒化物半導体レーザ素子及びその製造方法 - Google Patents

窒化物半導体レーザ素子及びその製造方法 Download PDF

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Publication number
JP4370751B2
JP4370751B2 JP2002040228A JP2002040228A JP4370751B2 JP 4370751 B2 JP4370751 B2 JP 4370751B2 JP 2002040228 A JP2002040228 A JP 2002040228A JP 2002040228 A JP2002040228 A JP 2002040228A JP 4370751 B2 JP4370751 B2 JP 4370751B2
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nitride semiconductor
layer
reflecting mirror
laser device
semiconductor laser
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Japanese (ja)
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JP2002252409A (ja
JP2002252409A5 (enExample
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俊雄 松下
康宜 杉本
修二 中村
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Nichia Corp
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Nichia Corp
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JP2002040228A 2002-02-18 2002-02-18 窒化物半導体レーザ素子及びその製造方法 Expired - Fee Related JP4370751B2 (ja)

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JP2002040228A JP4370751B2 (ja) 2002-02-18 2002-02-18 窒化物半導体レーザ素子及びその製造方法

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JP2002040228A JP4370751B2 (ja) 2002-02-18 2002-02-18 窒化物半導体レーザ素子及びその製造方法

Related Parent Applications (1)

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JP33388496A Division JP3476636B2 (ja) 1996-12-13 1996-12-13 窒化物半導体レーザ素子

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JP2002252409A JP2002252409A (ja) 2002-09-06
JP2002252409A5 JP2002252409A5 (enExample) 2004-11-25
JP4370751B2 true JP4370751B2 (ja) 2009-11-25

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JP2002252409A (ja) 2002-09-06

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