JP2004179657A5 - - Google Patents

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Publication number
JP2004179657A5
JP2004179657A5 JP2003391721A JP2003391721A JP2004179657A5 JP 2004179657 A5 JP2004179657 A5 JP 2004179657A5 JP 2003391721 A JP2003391721 A JP 2003391721A JP 2003391721 A JP2003391721 A JP 2003391721A JP 2004179657 A5 JP2004179657 A5 JP 2004179657A5
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JP
Japan
Prior art keywords
semiconductor material
semiconductor
region
quantum well
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003391721A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004179657A (ja
Filing date
Publication date
Priority claimed from US10/303,044 external-priority patent/US6878959B2/en
Application filed filed Critical
Publication of JP2004179657A publication Critical patent/JP2004179657A/ja
Publication of JP2004179657A5 publication Critical patent/JP2004179657A5/ja
Pending legal-status Critical Current

Links

JP2003391721A 2002-11-22 2003-11-21 Ｉｉｉ−ｖ族半導体素子 Pending JP2004179657A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/303,044 US6878959B2 (en) 2002-11-22 2002-11-22 Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice

Publications (2)

Publication Number Publication Date
JP2004179657A JP2004179657A (ja) 2004-06-24
JP2004179657A5 true JP2004179657A5 (enExample) 2007-01-18

Family

ID=32324908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003391721A Pending JP2004179657A (ja) 2002-11-22 2003-11-21 Ｉｉｉ−ｖ族半導体素子

Country Status (2)

Country Link
US (1) US6878959B2 (enExample)
JP (1) JP2004179657A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040161006A1 (en) * 2003-02-18 2004-08-19 Ying-Lan Chang Method and apparatus for improving wavelength stability for InGaAsN devices
US7447246B2 (en) * 2004-10-27 2008-11-04 Jian-Jun He Q-modulated semiconductor laser
KR100651478B1 (ko) * 2005-01-19 2006-11-29 삼성전자주식회사 반도체 레이저와 반도체 레이저의 제작 방법
US7523547B2 (en) 2005-08-31 2009-04-28 International Business Machines Corporation Method for attaching a flexible structure to a device and a device having a flexible structure
JP2007149939A (ja) * 2005-11-28 2007-06-14 Hitachi Ltd 半導体レーザ装置
KR100818269B1 (ko) * 2006-06-23 2008-04-01 삼성전자주식회사 질화물 반도체 발광소자
US7821091B2 (en) * 2007-11-29 2010-10-26 International Business Machines Corporation Photo detector
US7981591B2 (en) * 2008-03-27 2011-07-19 Corning Incorporated Semiconductor buried grating fabrication method
JP2010114158A (ja) * 2008-11-04 2010-05-20 Opnext Japan Inc 電界吸収型光変調器集積レーザ素子の製造方法
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
CN107768461B (zh) * 2016-08-18 2020-06-09 清华大学 一种内嵌重掺杂光栅层的半导体红外探测器
US10554018B2 (en) 2017-12-19 2020-02-04 International Business Machines Corporation Hybrid vertical current injection electro-optical device with refractive-index-matched current blocking layer
CN111711075B (zh) * 2020-06-30 2021-09-03 度亘激光技术（苏州）有限公司 有源区、半导体激光器及半导体激光器的制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731789A (en) * 1985-05-13 1988-03-15 Xerox Corporation Clad superlattice semiconductor laser
US4771010A (en) * 1986-11-21 1988-09-13 Xerox Corporation Energy beam induced layer disordering (EBILD)
US4824798A (en) * 1987-11-05 1989-04-25 Xerox Corporation Method of introducing impurity species into a semiconductor structure from a deposited source
US5048038A (en) * 1990-01-25 1991-09-10 The United States Of America As Represented By The United States Department Of Energy Ion-implanted planar-buried-heterostructure diode laser
GB2371405B (en) * 2001-01-23 2003-10-15 Univ Glasgow Improvements in or relating to semiconductor lasers

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