JP2004179657A - Ｉｉｉ−ｖ族半導体素子 - Google Patents

Ｉｉｉ−ｖ族半導体素子 Download PDF

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Publication number
JP2004179657A
JP2004179657A JP2003391721A JP2003391721A JP2004179657A JP 2004179657 A JP2004179657 A JP 2004179657A JP 2003391721 A JP2003391721 A JP 2003391721A JP 2003391721 A JP2003391721 A JP 2003391721A JP 2004179657 A JP2004179657 A JP 2004179657A
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Japan
Prior art keywords
semiconductor material
layer
quantum well
refractive index
region
Prior art date
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Pending
Application number
JP2003391721A
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English (en)
Japanese (ja)
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JP2004179657A5 (enExample
Inventor
David P Bour
デイヴィッド・ピー・ブーア
Ying-Lan Chang
イン‐ラン・チャン
Tetsuya Takeuchi
竹内　哲也
Danny E Mars
ダニー・イー・マース
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Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
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Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2004179657A publication Critical patent/JP2004179657A/ja
Publication of JP2004179657A5 publication Critical patent/JP2004179657A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
JP2003391721A 2002-11-22 2003-11-21 Ｉｉｉ−ｖ族半導体素子 Pending JP2004179657A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/303,044 US6878959B2 (en) 2002-11-22 2002-11-22 Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice

Publications (2)

Publication Number Publication Date
JP2004179657A true JP2004179657A (ja) 2004-06-24
JP2004179657A5 JP2004179657A5 (enExample) 2007-01-18

Family

ID=32324908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003391721A Pending JP2004179657A (ja) 2002-11-22 2003-11-21 Ｉｉｉ−ｖ族半導体素子

Country Status (2)

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US (1) US6878959B2 (enExample)
JP (1) JP2004179657A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007149939A (ja) * 2005-11-28 2007-06-14 Hitachi Ltd 半導体レーザ装置
JP2010114158A (ja) * 2008-11-04 2010-05-20 Opnext Japan Inc 電界吸収型光変調器集積レーザ素子の製造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040161006A1 (en) * 2003-02-18 2004-08-19 Ying-Lan Chang Method and apparatus for improving wavelength stability for InGaAsN devices
US7447246B2 (en) * 2004-10-27 2008-11-04 Jian-Jun He Q-modulated semiconductor laser
KR100651478B1 (ko) * 2005-01-19 2006-11-29 삼성전자주식회사 반도체 레이저와 반도체 레이저의 제작 방법
US7523547B2 (en) 2005-08-31 2009-04-28 International Business Machines Corporation Method for attaching a flexible structure to a device and a device having a flexible structure
KR100818269B1 (ko) * 2006-06-23 2008-04-01 삼성전자주식회사 질화물 반도체 발광소자
US7821091B2 (en) * 2007-11-29 2010-10-26 International Business Machines Corporation Photo detector
US7981591B2 (en) * 2008-03-27 2011-07-19 Corning Incorporated Semiconductor buried grating fabrication method
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
CN107768461B (zh) * 2016-08-18 2020-06-09 清华大学 一种内嵌重掺杂光栅层的半导体红外探测器
US10554018B2 (en) 2017-12-19 2020-02-04 International Business Machines Corporation Hybrid vertical current injection electro-optical device with refractive-index-matched current blocking layer
CN111711075B (zh) * 2020-06-30 2021-09-03 度亘激光技术（苏州）有限公司 有源区、半导体激光器及半导体激光器的制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731789A (en) * 1985-05-13 1988-03-15 Xerox Corporation Clad superlattice semiconductor laser
US4771010A (en) * 1986-11-21 1988-09-13 Xerox Corporation Energy beam induced layer disordering (EBILD)
US4824798A (en) * 1987-11-05 1989-04-25 Xerox Corporation Method of introducing impurity species into a semiconductor structure from a deposited source
US5048038A (en) * 1990-01-25 1991-09-10 The United States Of America As Represented By The United States Department Of Energy Ion-implanted planar-buried-heterostructure diode laser
GB2371405B (en) * 2001-01-23 2003-10-15 Univ Glasgow Improvements in or relating to semiconductor lasers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007149939A (ja) * 2005-11-28 2007-06-14 Hitachi Ltd 半導体レーザ装置
JP2010114158A (ja) * 2008-11-04 2010-05-20 Opnext Japan Inc 電界吸収型光変調器集積レーザ素子の製造方法

Also Published As

Publication number Publication date
US20040099856A1 (en) 2004-05-27
US6878959B2 (en) 2005-04-12

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