JP4604488B2 - 窒化物半導体発光素子およびその製造方法 - Google Patents

窒化物半導体発光素子およびその製造方法 Download PDF

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JP4604488B2
JP4604488B2 JP2003435311A JP2003435311A JP4604488B2 JP 4604488 B2 JP4604488 B2 JP 4604488B2 JP 2003435311 A JP2003435311 A JP 2003435311A JP 2003435311 A JP2003435311 A JP 2003435311A JP 4604488 B2 JP4604488 B2 JP 4604488B2
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layer
nitride semiconductor
film
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light emitting
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JP2005197289A5 (https=
JP2005197289A (ja
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雅彦 佐野
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Nichia Corp
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Nichia Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

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JP2003435311A 2003-12-26 2003-12-26 窒化物半導体発光素子およびその製造方法 Expired - Fee Related JP4604488B2 (ja)

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JP4956902B2 (ja) * 2005-03-18 2012-06-20 三菱化学株式会社 ＧａＮ系発光ダイオードおよびそれを用いた発光装置
JP4671748B2 (ja) * 2005-04-25 2011-04-20 京セラ株式会社 発光装置用配線基板および発光装置
WO2007004701A1 (en) * 2005-07-04 2007-01-11 Showa Denko K.K. Gallium nitride-based compound semiconductor lihgt-emitting device
JP5030398B2 (ja) * 2005-07-04 2012-09-19 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子
JP4920249B2 (ja) * 2005-12-06 2012-04-18 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
JP4738999B2 (ja) * 2005-12-06 2011-08-03 豊田合成株式会社 半導体光素子の製造方法
JP5048960B2 (ja) * 2006-03-20 2012-10-17 パナソニック株式会社 半導体発光素子
JP4932292B2 (ja) * 2006-03-23 2012-05-16 昭和電工株式会社 窒化物半導体素子の製造方法。
JP5153082B2 (ja) * 2006-03-24 2013-02-27 三洋電機株式会社 半導体素子
US7573074B2 (en) 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode
US7737455B2 (en) 2006-05-19 2010-06-15 Bridgelux, Inc. Electrode structures for LEDs with increased active area
WO2008019059A2 (en) * 2006-08-06 2008-02-14 Lightwave Photonics Inc. Iii-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
KR101484461B1 (ko) * 2006-12-21 2015-01-20 코닌클리케 필립스 엔.브이. 성형된 파장 변환기를 가지는 발광 장치
CN102779918B (zh) 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
DE102007022947B4 (de) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
JP5235878B2 (ja) * 2007-06-15 2013-07-10 ローム株式会社 半導体発光素子
US7939836B2 (en) 2007-07-18 2011-05-10 Nichia Corporation Semiconductor light emitting element
JP5223102B2 (ja) 2007-08-08 2013-06-26 豊田合成株式会社 フリップチップ型発光素子
JP5251038B2 (ja) * 2007-08-23 2013-07-31 豊田合成株式会社 発光装置
JP5634003B2 (ja) * 2007-09-29 2014-12-03 日亜化学工業株式会社 発光装置
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
US7915629B2 (en) * 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
KR101449005B1 (ko) 2007-11-26 2014-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2009164423A (ja) * 2008-01-08 2009-07-23 Nichia Corp 発光素子
US8581283B2 (en) 2008-04-28 2013-11-12 Advanced Optoelectronic Technology, Inc. Photoelectric device having group III nitride semiconductor
TWI447783B (zh) * 2008-04-28 2014-08-01 榮創能源科技股份有限公司 三族氮化合物半導體發光元件之製造方法及其結構
JP5151758B2 (ja) * 2008-07-18 2013-02-27 豊田合成株式会社 発光素子
JP5497301B2 (ja) * 2009-01-29 2014-05-21 スタンレー電気株式会社 半導体発光素子及びその製造方法
US20100327300A1 (en) 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US9178116B2 (en) 2010-06-25 2015-11-03 Toyoda Gosei Co. Ltd. Semiconductor light-emitting element
DE102010032497A1 (de) * 2010-07-28 2012-02-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
JP5095785B2 (ja) 2010-08-09 2012-12-12 株式会社東芝 半導体発光素子及びその製造方法
US8764224B2 (en) 2010-08-12 2014-07-01 Cree, Inc. Luminaire with distributed LED sources
WO2012035759A1 (ja) * 2010-09-14 2012-03-22 パナソニック株式会社 バックライト装置、およびそのバックライト装置を用いた液晶表示装置、およびそれらに用いる発光ダイオード
JP5877347B2 (ja) * 2010-09-14 2016-03-08 パナソニックＩｐマネジメント株式会社 バックライト装置、およびそのバックライト装置を用いた液晶表示装置、およびそれらに用いる発光ダイオード
WO2012067075A1 (ja) * 2010-11-15 2012-05-24 日本電気株式会社 光素子
US8680556B2 (en) 2011-03-24 2014-03-25 Cree, Inc. Composite high reflectivity layer
JP5708285B2 (ja) * 2011-06-10 2015-04-30 豊田合成株式会社 半導体発光素子及び半導体発光装置
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US8686429B2 (en) 2011-06-24 2014-04-01 Cree, Inc. LED structure with enhanced mirror reflectivity
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US8395165B2 (en) * 2011-07-08 2013-03-12 Bridelux, Inc. Laterally contacted blue LED with superlattice current spreading layer
JP5304855B2 (ja) * 2011-08-12 2013-10-02 三菱化学株式会社 ＧａＮ系発光ダイオードおよびそれを用いた発光装置
JP5949294B2 (ja) 2011-08-31 2016-07-06 日亜化学工業株式会社 半導体発光素子
KR101916140B1 (ko) * 2012-05-14 2018-11-08 엘지이노텍 주식회사 발광소자
JP2014049603A (ja) 2012-08-31 2014-03-17 Toshiba Corp 半導体発光装置
JP5435523B1 (ja) * 2012-10-12 2014-03-05 エルシード株式会社 半導体発光素子及びその製造方法
JP5915504B2 (ja) 2012-11-06 2016-05-11 日亜化学工業株式会社 半導体発光素子
KR102091831B1 (ko) * 2013-01-08 2020-03-20 서울반도체 주식회사 발광 다이오드 및 그 제조방법
KR102119817B1 (ko) * 2014-01-02 2020-06-05 엘지이노텍 주식회사 발광소자
US20150364651A1 (en) * 2014-06-12 2015-12-17 Toshiba Corporation Flip-Chip Light Emitting Diode Assembly With Relief Channel
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
KR102404760B1 (ko) * 2015-07-24 2022-06-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
JP6683003B2 (ja) 2016-05-11 2020-04-15 日亜化学工業株式会社 半導体素子、半導体装置及び半導体素子の製造方法
JP6720747B2 (ja) 2016-07-19 2020-07-08 日亜化学工業株式会社 半導体装置、基台及びそれらの製造方法
KR102707425B1 (ko) * 2017-01-06 2024-09-20 서울바이오시스 주식회사 전류 차단층을 가지는 발광 소자

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JPH10256602A (ja) * 1997-03-12 1998-09-25 Sharp Corp 半導体発光素子
JP2000216431A (ja) * 1998-11-19 2000-08-04 Sanyo Electric Co Ltd 発光素子
JP3921989B2 (ja) * 2001-10-19 2007-05-30 日亜化学工業株式会社 半導体発光素子
JP2003163373A (ja) * 2001-11-26 2003-06-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP4122785B2 (ja) * 2002-01-30 2008-07-23 日亜化学工業株式会社 発光素子
JP3972670B2 (ja) * 2002-02-06 2007-09-05 豊田合成株式会社 発光装置

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