JP4585327B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP4585327B2
JP4585327B2 JP2005031999A JP2005031999A JP4585327B2 JP 4585327 B2 JP4585327 B2 JP 4585327B2 JP 2005031999 A JP2005031999 A JP 2005031999A JP 2005031999 A JP2005031999 A JP 2005031999A JP 4585327 B2 JP4585327 B2 JP 4585327B2
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JP
Japan
Prior art keywords
semiconductor device
bonding
boundary
region
bonding pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2005031999A
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English (en)
Japanese (ja)
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JP2006222147A5 (https=
JP2006222147A (ja
Inventor
昭人 田辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2005031999A priority Critical patent/JP4585327B2/ja
Priority to US11/342,527 priority patent/US7294930B2/en
Priority to CNB2006100064634A priority patent/CN100426497C/zh
Publication of JP2006222147A publication Critical patent/JP2006222147A/ja
Publication of JP2006222147A5 publication Critical patent/JP2006222147A5/ja
Application granted granted Critical
Publication of JP4585327B2 publication Critical patent/JP4585327B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2005031999A 2005-02-08 2005-02-08 半導体装置およびその製造方法 Expired - Lifetime JP4585327B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005031999A JP4585327B2 (ja) 2005-02-08 2005-02-08 半導体装置およびその製造方法
US11/342,527 US7294930B2 (en) 2005-02-08 2006-01-31 Semiconductor device and manufacturing process therefor
CNB2006100064634A CN100426497C (zh) 2005-02-08 2006-02-08 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005031999A JP4585327B2 (ja) 2005-02-08 2005-02-08 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2006222147A JP2006222147A (ja) 2006-08-24
JP2006222147A5 JP2006222147A5 (https=) 2007-12-27
JP4585327B2 true JP4585327B2 (ja) 2010-11-24

Family

ID=36911737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005031999A Expired - Lifetime JP4585327B2 (ja) 2005-02-08 2005-02-08 半導体装置およびその製造方法

Country Status (3)

Country Link
US (1) US7294930B2 (https=)
JP (1) JP4585327B2 (https=)
CN (1) CN100426497C (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5148825B2 (ja) * 2005-10-14 2013-02-20 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP4930322B2 (ja) 2006-11-10 2012-05-16 ソニー株式会社 半導体発光素子、光ピックアップ装置および情報記録再生装置
JP5027605B2 (ja) * 2007-09-25 2012-09-19 パナソニック株式会社 半導体装置
JP5323406B2 (ja) * 2008-06-24 2013-10-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP5160498B2 (ja) * 2009-05-20 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置
JP5318055B2 (ja) 2010-09-22 2013-10-16 株式会社東芝 半導体装置、及び半導体装置の製造方法
DE102011004106A1 (de) * 2010-12-28 2012-06-28 Robert Bosch Gmbh Leiterplatte, Verfahren zum Herstellen einer Leiterplatte und Prüfvorrichtung zum Prüfen einer Leiterplatte
JP6348009B2 (ja) * 2014-07-15 2018-06-27 ラピスセミコンダクタ株式会社 半導体装置
CN106783802A (zh) * 2016-11-22 2017-05-31 上海华力微电子有限公司 一种芯片中特定电路测试用微型衬垫结构及其制作方法
JP2021150307A (ja) * 2020-03-16 2021-09-27 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体装置の製造方法、及び電子機器
US12176320B2 (en) 2021-05-10 2024-12-24 Ap Memory Technology Corporation Semiconductor structure and methods for bonding tested wafers and testing pre-bonded wafers
US20230164923A1 (en) * 2021-11-19 2023-05-25 Kollmorgen Corporation Solder joint inspection features
CN117199054A (zh) * 2022-06-01 2023-12-08 长鑫存储技术有限公司 封装结构及其制作方法、半导体器件
EP4307367B1 (en) * 2022-06-01 2026-03-04 Changxin Memory Technologies, Inc. Packaging structure
CN118099133A (zh) * 2022-11-15 2024-05-28 长鑫存储技术有限公司 半导体结构

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01129432A (ja) * 1987-11-16 1989-05-22 Nec Corp 集積回路
JPH04215450A (ja) * 1990-12-14 1992-08-06 Mitsubishi Electric Corp 半導体集積回路装置
JPH08115958A (ja) * 1994-08-24 1996-05-07 Nec Corp 半導体装置
JPH09213757A (ja) * 1996-02-07 1997-08-15 Kawasaki Steel Corp ウエハプローブ容易化方法
JP3843624B2 (ja) * 1998-11-27 2006-11-08 松下電器産業株式会社 半導体集積回路装置及び半導体集積回路装置の組立方法
KR100331553B1 (ko) * 1999-09-16 2002-04-06 윤종용 여러번의 프로빙 및 안정된 본딩을 허용하는 패드를 갖는 집적회로 장치
JP2001176876A (ja) * 1999-12-17 2001-06-29 Matsushita Electronics Industry Corp 高耐圧半導体装置
JP2001338955A (ja) * 2000-05-29 2001-12-07 Texas Instr Japan Ltd 半導体装置及びその製造方法
US6563226B2 (en) * 2001-05-23 2003-05-13 Motorola, Inc. Bonding pad
US6844631B2 (en) * 2002-03-13 2005-01-18 Freescale Semiconductor, Inc. Semiconductor device having a bond pad and method therefor
US6784556B2 (en) * 2002-04-19 2004-08-31 Kulicke & Soffa Investments, Inc. Design of interconnection pads with separated probing and wire bonding regions
JP3724464B2 (ja) * 2002-08-19 2005-12-07 株式会社デンソー 半導体圧力センサ
US6765228B2 (en) * 2002-10-11 2004-07-20 Taiwan Semiconductor Maunfacturing Co., Ltd. Bonding pad with separate bonding and probing areas
JP2006210631A (ja) * 2005-01-28 2006-08-10 Nec Electronics Corp 半導体装置

Also Published As

Publication number Publication date
JP2006222147A (ja) 2006-08-24
CN100426497C (zh) 2008-10-15
CN1819168A (zh) 2006-08-16
US7294930B2 (en) 2007-11-13
US20060186405A1 (en) 2006-08-24

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