CN100426497C - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN100426497C
CN100426497C CNB2006100064634A CN200610006463A CN100426497C CN 100426497 C CN100426497 C CN 100426497C CN B2006100064634 A CNB2006100064634 A CN B2006100064634A CN 200610006463 A CN200610006463 A CN 200610006463A CN 100426497 C CN100426497 C CN 100426497C
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CN
China
Prior art keywords
semiconductor device
pad
mark
identification mark
area
Prior art date
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Expired - Lifetime
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CNB2006100064634A
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English (en)
Chinese (zh)
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CN1819168A (zh
Inventor
田边昭人
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Renesas Electronics Corp
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NEC Electronics Corp
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Publication date
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Publication of CN1819168A publication Critical patent/CN1819168A/zh
Application granted granted Critical
Publication of CN100426497C publication Critical patent/CN100426497C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
CNB2006100064634A 2005-02-08 2006-02-08 半导体装置及其制造方法 Expired - Lifetime CN100426497C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005031999A JP4585327B2 (ja) 2005-02-08 2005-02-08 半導体装置およびその製造方法
JP2005-031999 2005-02-08
JP2005031999 2005-02-08

Publications (2)

Publication Number Publication Date
CN1819168A CN1819168A (zh) 2006-08-16
CN100426497C true CN100426497C (zh) 2008-10-15

Family

ID=36911737

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100064634A Expired - Lifetime CN100426497C (zh) 2005-02-08 2006-02-08 半导体装置及其制造方法

Country Status (3)

Country Link
US (1) US7294930B2 (https=)
JP (1) JP4585327B2 (https=)
CN (1) CN100426497C (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105280595A (zh) * 2014-07-15 2016-01-27 拉碧斯半导体株式会社 半导体装置
CN106783802A (zh) * 2016-11-22 2017-05-31 上海华力微电子有限公司 一种芯片中特定电路测试用微型衬垫结构及其制作方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5148825B2 (ja) * 2005-10-14 2013-02-20 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP4930322B2 (ja) 2006-11-10 2012-05-16 ソニー株式会社 半導体発光素子、光ピックアップ装置および情報記録再生装置
JP5027605B2 (ja) * 2007-09-25 2012-09-19 パナソニック株式会社 半導体装置
JP5323406B2 (ja) * 2008-06-24 2013-10-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP5160498B2 (ja) * 2009-05-20 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置
JP5318055B2 (ja) 2010-09-22 2013-10-16 株式会社東芝 半導体装置、及び半導体装置の製造方法
DE102011004106A1 (de) * 2010-12-28 2012-06-28 Robert Bosch Gmbh Leiterplatte, Verfahren zum Herstellen einer Leiterplatte und Prüfvorrichtung zum Prüfen einer Leiterplatte
JP2021150307A (ja) * 2020-03-16 2021-09-27 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体装置の製造方法、及び電子機器
US12176320B2 (en) 2021-05-10 2024-12-24 Ap Memory Technology Corporation Semiconductor structure and methods for bonding tested wafers and testing pre-bonded wafers
US20230164923A1 (en) * 2021-11-19 2023-05-25 Kollmorgen Corporation Solder joint inspection features
CN117199054A (zh) * 2022-06-01 2023-12-08 长鑫存储技术有限公司 封装结构及其制作方法、半导体器件
EP4307367B1 (en) * 2022-06-01 2026-03-04 Changxin Memory Technologies, Inc. Packaging structure
CN118099133A (zh) * 2022-11-15 2024-05-28 长鑫存储技术有限公司 半导体结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164620A (ja) * 1998-11-27 2000-06-16 Matsushita Electric Ind Co Ltd 半導体集積回路装置及び半導体集積回路装置の組立方法
US6765228B2 (en) * 2002-10-11 2004-07-20 Taiwan Semiconductor Maunfacturing Co., Ltd. Bonding pad with separate bonding and probing areas
US6784556B2 (en) * 2002-04-19 2004-08-31 Kulicke & Soffa Investments, Inc. Design of interconnection pads with separated probing and wire bonding regions
US6844631B2 (en) * 2002-03-13 2005-01-18 Freescale Semiconductor, Inc. Semiconductor device having a bond pad and method therefor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01129432A (ja) * 1987-11-16 1989-05-22 Nec Corp 集積回路
JPH04215450A (ja) * 1990-12-14 1992-08-06 Mitsubishi Electric Corp 半導体集積回路装置
JPH08115958A (ja) * 1994-08-24 1996-05-07 Nec Corp 半導体装置
JPH09213757A (ja) * 1996-02-07 1997-08-15 Kawasaki Steel Corp ウエハプローブ容易化方法
KR100331553B1 (ko) * 1999-09-16 2002-04-06 윤종용 여러번의 프로빙 및 안정된 본딩을 허용하는 패드를 갖는 집적회로 장치
JP2001176876A (ja) * 1999-12-17 2001-06-29 Matsushita Electronics Industry Corp 高耐圧半導体装置
JP2001338955A (ja) * 2000-05-29 2001-12-07 Texas Instr Japan Ltd 半導体装置及びその製造方法
US6563226B2 (en) * 2001-05-23 2003-05-13 Motorola, Inc. Bonding pad
JP3724464B2 (ja) * 2002-08-19 2005-12-07 株式会社デンソー 半導体圧力センサ
JP2006210631A (ja) * 2005-01-28 2006-08-10 Nec Electronics Corp 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164620A (ja) * 1998-11-27 2000-06-16 Matsushita Electric Ind Co Ltd 半導体集積回路装置及び半導体集積回路装置の組立方法
US6844631B2 (en) * 2002-03-13 2005-01-18 Freescale Semiconductor, Inc. Semiconductor device having a bond pad and method therefor
US6784556B2 (en) * 2002-04-19 2004-08-31 Kulicke & Soffa Investments, Inc. Design of interconnection pads with separated probing and wire bonding regions
US6765228B2 (en) * 2002-10-11 2004-07-20 Taiwan Semiconductor Maunfacturing Co., Ltd. Bonding pad with separate bonding and probing areas

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105280595A (zh) * 2014-07-15 2016-01-27 拉碧斯半导体株式会社 半导体装置
CN105280595B (zh) * 2014-07-15 2019-03-01 拉碧斯半导体株式会社 半导体装置
CN106783802A (zh) * 2016-11-22 2017-05-31 上海华力微电子有限公司 一种芯片中特定电路测试用微型衬垫结构及其制作方法

Also Published As

Publication number Publication date
JP4585327B2 (ja) 2010-11-24
JP2006222147A (ja) 2006-08-24
CN1819168A (zh) 2006-08-16
US7294930B2 (en) 2007-11-13
US20060186405A1 (en) 2006-08-24

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Owner name: RENESAS ELECTRONICS CO., LTD.

Free format text: FORMER NAME: NEC CORP.

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Address after: Kanagawa, Japan

Patentee after: Renesas Electronics Corp.

Address before: Kanagawa, Japan

Patentee before: NEC ELECTRONICS Corp.

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Patentee before: Renesas Electronics Corp.

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Granted publication date: 20081015

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