JP4542452B2 - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法 Download PDF

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Publication number
JP4542452B2
JP4542452B2 JP2005079455A JP2005079455A JP4542452B2 JP 4542452 B2 JP4542452 B2 JP 4542452B2 JP 2005079455 A JP2005079455 A JP 2005079455A JP 2005079455 A JP2005079455 A JP 2005079455A JP 4542452 B2 JP4542452 B2 JP 4542452B2
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JP
Japan
Prior art keywords
tft
electrode
ohmic contact
ink
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005079455A
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English (en)
Japanese (ja)
Other versions
JP2006261538A (ja
Inventor
芳和 好本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Future Vision Inc
Original Assignee
Future Vision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Future Vision Inc filed Critical Future Vision Inc
Priority to JP2005079455A priority Critical patent/JP4542452B2/ja
Priority to KR1020050106871A priority patent/KR100799852B1/ko
Priority to TW094140878A priority patent/TWI289361B/zh
Publication of JP2006261538A publication Critical patent/JP2006261538A/ja
Application granted granted Critical
Publication of JP4542452B2 publication Critical patent/JP4542452B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/42—Arrangements for providing conduction through an insulating substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005079455A 2005-03-18 2005-03-18 薄膜トランジスタの製造方法 Expired - Fee Related JP4542452B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005079455A JP4542452B2 (ja) 2005-03-18 2005-03-18 薄膜トランジスタの製造方法
KR1020050106871A KR100799852B1 (ko) 2005-03-18 2005-11-09 박막 트랜지스터를 이용한 액정 표시 장치와 그 제조 방법
TW094140878A TWI289361B (en) 2005-03-18 2005-11-21 Liquid crystal display device using thin film transistor and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005079455A JP4542452B2 (ja) 2005-03-18 2005-03-18 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JP2006261538A JP2006261538A (ja) 2006-09-28
JP4542452B2 true JP4542452B2 (ja) 2010-09-15

Family

ID=37100411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005079455A Expired - Fee Related JP4542452B2 (ja) 2005-03-18 2005-03-18 薄膜トランジスタの製造方法

Country Status (3)

Country Link
JP (1) JP4542452B2 (ko)
KR (1) KR100799852B1 (ko)
TW (1) TWI289361B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007299779A (ja) * 2006-04-27 2007-11-15 Tokyo Electron Ltd マスクパターンの形成方法およびｔｆｔの製造方法
KR101348025B1 (ko) 2007-04-04 2014-01-06 삼성전자주식회사 박막 트랜지스터의 제조방법
JP5331321B2 (ja) * 2007-08-31 2013-10-30 ゴールドチャームリミテッド 表示装置の製造方法
KR101501699B1 (ko) 2007-09-19 2015-03-16 삼성디스플레이 주식회사 유기 박막 트랜지스터 기판 및 이의 제조 방법
JP2021027199A (ja) * 2019-08-06 2021-02-22 株式会社ジャパンディスプレイ 表示装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247704A (ja) * 2002-08-30 2004-09-02 Sharp Corp Ｔｆｔアレイ基板、液晶表示装置、ｔｆｔアレイ基板の製造方法および液晶表示装置の製造方法、並びに電子装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100532085B1 (ko) * 2002-05-23 2005-11-30 엘지.필립스 엘시디 주식회사 감광막 인쇄장치 및 이를 이용한 액정표시소자의 제조방법
JP4423864B2 (ja) * 2003-02-21 2010-03-03 コニカミノルタホールディングス株式会社 薄膜トランジスタ素子及びその製造方法
KR100652214B1 (ko) * 2003-04-03 2006-11-30 엘지.필립스 엘시디 주식회사 액정표시장치의 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247704A (ja) * 2002-08-30 2004-09-02 Sharp Corp Ｔｆｔアレイ基板、液晶表示装置、ｔｆｔアレイ基板の製造方法および液晶表示装置の製造方法、並びに電子装置

Also Published As

Publication number Publication date
TWI289361B (en) 2007-11-01
JP2006261538A (ja) 2006-09-28
KR100799852B1 (ko) 2008-01-31
KR20060101192A (ko) 2006-09-22
TW200635046A (en) 2006-10-01

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