JP2006261538A - 薄膜トランジスタを用いた液晶表示装置とその製造方法 - Google Patents
薄膜トランジスタを用いた液晶表示装置とその製造方法 Download PDFInfo
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- JP2006261538A JP2006261538A JP2005079455A JP2005079455A JP2006261538A JP 2006261538 A JP2006261538 A JP 2006261538A JP 2005079455 A JP2005079455 A JP 2005079455A JP 2005079455 A JP2005079455 A JP 2005079455A JP 2006261538 A JP2006261538 A JP 2006261538A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/42—Arrangements for providing conduction through an insulating substrate
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】液晶表示装置のTFT製造工程における、所謂アイランド形成時に、ハーフトーン露光として、露光によるレジストパターン62とインクジェット塗布によるレジストパターン71とを併用する。
【選択図】図5
Description
Claims (2)
- 絶縁基板上に形成されたゲート電極と、この電極を覆うゲート絶縁膜と、前記ゲート絶縁膜上に順次形成された半導体層及び分離されたオーミックコンタクト層と、前記分離されたオーミックコンタクト層上にそれぞれ形成されたソース電極及びドレイン電極と、前記ソース電極とドレイン電極との間に半導体層を保護する保護膜とを備えた薄膜トランジスタと、前記薄膜トランジスタをマトリクス状に配置し、前記薄膜トランジスタのドレイン電極(又はソース電極)に接続される画素電極と、ゲート電極に接続されるゲート配線と、ソース電極(又はドレイン電極)に接続されるソース配線とを備えた液晶表示装置において、
前記薄膜トランジスタの半導体層には、インクジェット塗布によるインクの滴下した痕跡部が形成されていることを特徴とする液晶表示装置 - 絶縁基板上にゲート電極及びこの電極を覆うゲート絶縁膜を形成し、前記ゲート絶縁膜上に半導体層とオーミックコンタクト層とを順次形成し、前記オーミックコンタクト層上に露光によるレジストパターンを形成し、前記露光によるレジストパターンを用いてオーミックコンタクト層をエッチングして、ギャップ部を有するオーミックコンタクト層を形成し、前記ギャップ部にインクジェット塗布によるレジストパターンを形成し、前記2つのレジストパターンを用いて半導体層をエッチングしてアイランドを形成し、前記2つのレジストパターンを剥離した後に、前記ギャップ部を保護膜で埋めた薄膜トランジスタを形成し、前記薄膜トランジスタをマトリクス状に配置し、前記薄膜トランジスタのドレイン電極(又はソース電極)に画素電極を接続し、ゲート電極にゲート配線を接続し、ソース電極(又はドレイン電極)にソース配線を接続した液晶表示装置の製造方法において、
前記半導体層をエッチングしてアイランドを形成する時のレジストパターンとして、露光によるレジストパターンとインクジェット塗布によるレジストパターンとを併用することを特徴とする液晶表示装置の製造方法
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005079455A JP4542452B2 (ja) | 2005-03-18 | 2005-03-18 | 薄膜トランジスタの製造方法 |
KR1020050106871A KR100799852B1 (ko) | 2005-03-18 | 2005-11-09 | 박막 트랜지스터를 이용한 액정 표시 장치와 그 제조 방법 |
TW094140878A TWI289361B (en) | 2005-03-18 | 2005-11-21 | Liquid crystal display device using thin film transistor and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005079455A JP4542452B2 (ja) | 2005-03-18 | 2005-03-18 | 薄膜トランジスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006261538A true JP2006261538A (ja) | 2006-09-28 |
JP4542452B2 JP4542452B2 (ja) | 2010-09-15 |
Family
ID=37100411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005079455A Expired - Fee Related JP4542452B2 (ja) | 2005-03-18 | 2005-03-18 | 薄膜トランジスタの製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4542452B2 (ja) |
KR (1) | KR100799852B1 (ja) |
TW (1) | TWI289361B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007299779A (ja) * | 2006-04-27 | 2007-11-15 | Tokyo Electron Ltd | マスクパターンの形成方法およびtftの製造方法 |
JP2009058791A (ja) * | 2007-08-31 | 2009-03-19 | Nec Lcd Technologies Ltd | 電子部品及び表示装置 |
US7927900B2 (en) | 2007-04-04 | 2011-04-19 | Samsung Electronics Co., Ltd. | Method of manufacturing thin film transistor including forming a bank for ink jet printing |
US8013326B2 (en) | 2007-09-19 | 2011-09-06 | Samsung Electronics Co., Ltd. | Organic thin film transistor substrate and method of manufacture |
WO2021024721A1 (ja) * | 2019-08-06 | 2021-02-11 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004247704A (ja) * | 2002-08-30 | 2004-09-02 | Sharp Corp | Tftアレイ基板、液晶表示装置、tftアレイ基板の製造方法および液晶表示装置の製造方法、並びに電子装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100532085B1 (ko) * | 2002-05-23 | 2005-11-30 | 엘지.필립스 엘시디 주식회사 | 감광막 인쇄장치 및 이를 이용한 액정표시소자의 제조방법 |
JP4423864B2 (ja) * | 2003-02-21 | 2010-03-03 | コニカミノルタホールディングス株式会社 | 薄膜トランジスタ素子及びその製造方法 |
KR100652214B1 (ko) * | 2003-04-03 | 2006-11-30 | 엘지.필립스 엘시디 주식회사 | 액정표시장치의 제조방법 |
-
2005
- 2005-03-18 JP JP2005079455A patent/JP4542452B2/ja not_active Expired - Fee Related
- 2005-11-09 KR KR1020050106871A patent/KR100799852B1/ko not_active IP Right Cessation
- 2005-11-21 TW TW094140878A patent/TWI289361B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004247704A (ja) * | 2002-08-30 | 2004-09-02 | Sharp Corp | Tftアレイ基板、液晶表示装置、tftアレイ基板の製造方法および液晶表示装置の製造方法、並びに電子装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007299779A (ja) * | 2006-04-27 | 2007-11-15 | Tokyo Electron Ltd | マスクパターンの形成方法およびtftの製造方法 |
US7927900B2 (en) | 2007-04-04 | 2011-04-19 | Samsung Electronics Co., Ltd. | Method of manufacturing thin film transistor including forming a bank for ink jet printing |
JP2009058791A (ja) * | 2007-08-31 | 2009-03-19 | Nec Lcd Technologies Ltd | 電子部品及び表示装置 |
US8013326B2 (en) | 2007-09-19 | 2011-09-06 | Samsung Electronics Co., Ltd. | Organic thin film transistor substrate and method of manufacture |
WO2021024721A1 (ja) * | 2019-08-06 | 2021-02-11 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4542452B2 (ja) | 2010-09-15 |
TW200635046A (en) | 2006-10-01 |
TWI289361B (en) | 2007-11-01 |
KR100799852B1 (ko) | 2008-01-31 |
KR20060101192A (ko) | 2006-09-22 |
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