JP2006295121A - 薄膜トランジスタを用いた液晶表示装置及びその製造方法 - Google Patents
薄膜トランジスタを用いた液晶表示装置及びその製造方法 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- G02F1/136286—Wiring, e.g. gate line, drain line
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- B26B—HAND-HELD CUTTING TOOLS NOT OTHERWISE PROVIDED FOR
- B26B19/00—Clippers or shavers operating with a plurality of cutting edges, e.g. hair clippers, dry shavers
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- B26B19/04—Cutting heads therefor; Cutters therefor; Securing equipment thereof
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- H—ELECTRICITY
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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Abstract
【解決手段】絶縁基板11上に形成された第1の光透過型感光性樹脂12の開口部に、ゲート電極13とソース配線201’と画素コンタクト層21’とを形成する。これらの上にゲート絶縁膜14と半導体層15とオーミックコンタクト層(n+半導体層)16と保護膜17を形成する。さらに、第2の光透過型感光性樹脂12’の開口部に、ソース電極19とドレイン電極19’と画素電極21とを形成する。また、第2の光透過型感光性樹脂の開口部に形成されるクロス部接続配線は、ソース配線又はゲート配線と同じく、インクジェット塗布された銀微粒子を含有するインクが焼成されてできた焼成銀である。
【選択図】図2
Description
(2)ソース配線のクロス部接続配線長:20μm(計1080箇所)、接触面積:10μm×10μm(計2160箇所)
(3)クロス部接続配線材料:本発明:銀(Ag)(比抵抗2.5μΩcm)、比較例1:ITO(比抵抗100μΩcm)
なお、ストレート配線の抵抗値は2kΩであった。
(2)ソース配線のクロス部接続配線長:20μm(計1080箇所)、接触面積:10μm×10μm(計2160箇所)
(3)クロス部接続配線材料:本発明:焼成銀(比抵抗2.5μΩcm)、比較例2:スパッタ銀(Ag)(比抵抗2.5μΩcm)
なお、ストレート配線の抵抗値は2kΩであった。
Claims (12)
- 絶縁基板上に、ゲート電極、ゲート絶縁膜、半導体層、オーミックコンタクト層、ソース電極、ドレイン電極、保護膜を順次形成した薄膜トランジスタと、前記薄膜トランジスタをマトリクス状に配置し、ゲート電極が形成されているゲート配線と、ソース電極に接続されるソース配線と、ゲート配線又はソース配線にクロス部接続配線とを備えた液晶表示装置において、
前記ゲート配線、ソース配線、クロス部接続配線のうち、少なくともゲート配線とソース配線は、光透過型感光性樹脂の開口部に形成されていることを特徴とする液晶表示装置 - 前記ゲート配線、ソース配線、クロス部接続配線は、焼成銀であることを特徴とする請求項1に記載の液晶表示装置
- 絶縁基板上に、ゲート電極、ゲート絶縁膜、半導体層、オーミックコンタクト層、ソース電極、ドレイン電極、保護膜を順次形成した薄膜トランジスタと、前記薄膜トランジスタをマトリクス状に配置し、ドレイン電極に画素コンタクト層を介して接続される画素電極と、ゲート電極が形成されているゲート配線と、ソース電極に接続されるソース配線と、補助容量に接続される補助容量配線と、ゲート配線とソース配線のいずれか一方の配線と補助容量配線にクロス部接続配線とを備えた液晶表示装置において、
前記画素コンタクト層、ゲート配線、ソース配線、クロス部接続配線を除く補助容量配線は、光透過型感光性樹脂の開口部に形成されていることを特徴とする液晶表示装置 - 前記オーミックコンタクト層は、n+層であることを特徴とする請求項3に記載の液晶表示装置
- 前記オーミックコンタクト層は、半導体層をイオンドープしたn+層であることを特徴とする請求項3に記載の液晶表示装置
- 前記画素コンタクト層、ゲート配線、ソース配線、クロス部接続配線を除く補助容量配線は、インクジェット塗布にて、光透過型感光性樹脂の開口部に形成されていることを特徴とする請求項3に記載の液晶表示装置
- 前記ソース電極、ドレイン電極、画素電極、クロス部接続配線は、インクジェット塗布にて形成されていることを特徴とする請求項3に記載の液晶表示装置
- 前記補助容量配線と画素電極は、透明導電体をインクジェット塗布することにより形成されていることを特徴とする請求項3に記載の液晶表示装置
- 絶縁基板上に、ゲート電極、ゲート絶縁膜、半導体層、オーミックコンタクト層、ソース電極、ドレイン電極、保護膜を順次形成した薄膜トランジスタと、前記薄膜トランジスタをマトリクス状に配置し、ドレイン電極に画素コンタクト層を介して接続される画素電極と、ゲート電極が形成されているゲート配線と、ソース電極に接続されるソース配線と、補助容量に接続される補助容量配線と、ゲート配線とソース配線のいずれか一方の配線と補助容量配線にクロス部接続配線とを備えた液晶表示装置の製造方法において、
前記画素コンタクト層、ゲート配線、ソース配線、クロス部接続配線を除く補助容量配線は、フォトマスクで、これら層及び配線を同時にパターン形成した光透過型感光性樹脂の開口部に、インクジェット塗布にて、同一層に同時に形成されることを特徴とする液晶表示装置の製造方法 - 前記画素コンタクト層、ゲート配線、ソース配線、クロス部接続配線を除く補助容量配線は、第1のフォトマスクで、これら層及び配線を同時にパターン形成した第1の光透過型感光性樹脂の開口部に、インクジェット塗布にて、同一層に同時に形成され、
前記ソース電極、ドレイン電極、画素電極、クロス部接続配線は、第2のフォトマスクで、これら電極及び配線を同時にパターン形成した第2の光透過型感光性樹脂の開口部に、インクジェット塗布にて、同一層に同時に形成されることを特徴とする請求項9に記載の液晶表示装置の製造方法 - 前記第2のフォトマスクで形成された第2の光透過型感光性樹脂は、ソース電極、ドレイン電極、画素電極、クロス部接続配線をインクジェット塗布するための開口部として使用されると共に、同時に、薄膜トランジスタ形成のためのエッチングマスクとしても使用されることを特徴とする請求項10に記載の液晶表示装置の製造方法
- 前記画素コンタクト層、ゲート配線、ソース配線及びクロス部接続配線を除く補助容量配線は、第1のフォトマスクで、これら層及び配線を同時にパターン形成した光透過型感光性樹脂の開口部に、インクジェット塗布にて、同一層に同時に形成され、
前記ソース電極、ドレイン電極、画素電極、クロス部接続配線は、第2のフォトマスクで、これら電極及び配線を同時にパターン形成した保護膜の開口部に、インクジェット塗布にて、同一層に同時に形成されることを特徴とする請求項9に記載の液晶表示装置の製造方法
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JP2005360166A JP4516518B2 (ja) | 2005-03-15 | 2005-12-14 | 薄膜トランジスタを用いた液晶表示装置及びその製造方法 |
KR1020060012391A KR100738168B1 (ko) | 2005-03-15 | 2006-02-09 | 박막 트랜지스터를 이용한 액정 표시 장치 및 그 제조 방법 |
CN2006100739432A CN1835242B (zh) | 2005-03-15 | 2006-02-10 | 利用了薄膜晶体管的液晶显示装置及其制造方法 |
CN2009100044475A CN101499478B (zh) | 2005-03-15 | 2006-02-10 | 利用了薄膜晶体管的液晶显示装置 |
TW095105781A TW200644256A (en) | 2005-03-15 | 2006-02-21 | Liquid crystal display device using thin-film transistor and method for manufacturing the same |
US11/375,072 US7821604B2 (en) | 2005-03-15 | 2006-03-15 | Liquid crystal display device comprising a crossing portion connecting line and a light transmission type photosensitive resin having openings |
US12/886,635 US7995180B2 (en) | 2005-03-15 | 2010-09-21 | Method for manufacturing liquid crystal display device comprising a crossing portion connecting line and a light transmission type photosensitive resin having openings |
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US7868959B2 (en) * | 2006-11-21 | 2011-01-11 | Hitachi Displays, Ltd. | Liquid crystal display device having common electrodes formed over the main face of an insulating substrate and made of a coating type electroconductive film inside a bank to regulate the edges thereof |
TWI616707B (zh) | 2008-11-28 | 2018-03-01 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
KR101361925B1 (ko) * | 2010-07-07 | 2014-02-21 | 엘지디스플레이 주식회사 | 저저항배선 구조를 갖는 박막 트랜지스터 기판 및 그 제조 방법 |
KR101899481B1 (ko) | 2011-12-23 | 2018-09-18 | 삼성전자주식회사 | 전자 장치의 배선 형성 방법 |
JP6411063B2 (ja) * | 2014-05-07 | 2018-10-24 | キヤノンメディカルシステムズ株式会社 | 磁気共鳴イメージング装置及びsar算出方法 |
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JP2006251120A (ja) * | 2005-03-09 | 2006-09-21 | Seiko Epson Corp | 画素構造、アクティブマトリクス基板、アクティブマトリクス基板の製造方法、電気光学装置、並びに電子機器 |
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JPH03249735A (ja) * | 1990-02-28 | 1991-11-07 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法 |
JPH05119332A (ja) * | 1991-10-30 | 1993-05-18 | Sanyo Electric Co Ltd | 液晶表示装置 |
JP2687917B2 (ja) * | 1995-02-20 | 1997-12-08 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH09265113A (ja) | 1996-03-28 | 1997-10-07 | Nec Corp | アクティブマトリクス型液晶表示装置およびその製造方 法 |
JP3622934B2 (ja) | 1996-07-31 | 2005-02-23 | エルジー フィリップス エルシーディー カンパニー リミテッド | 薄膜トランジスタ型液晶表示装置 |
JP4643774B2 (ja) * | 1997-10-18 | 2011-03-02 | 三星電子株式会社 | 液晶表示装置及びその製造方法 |
JP4674926B2 (ja) * | 1999-02-12 | 2011-04-20 | エーユー オプトロニクス コーポレイション | 液晶ディスプレイパネル及びその製造方法 |
JP2000267140A (ja) * | 1999-03-16 | 2000-09-29 | Fujitsu Ltd | 液晶表示装置の製造方法 |
JP2003318193A (ja) | 2002-04-22 | 2003-11-07 | Seiko Epson Corp | デバイス、その製造方法及び電子装置 |
KR100966420B1 (ko) * | 2003-06-30 | 2010-06-28 | 엘지디스플레이 주식회사 | 폴리실리콘 액정표시소자 및 그 제조방법 |
US7372513B2 (en) * | 2003-12-30 | 2008-05-13 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device and method for fabricating the same |
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JP2006251120A (ja) * | 2005-03-09 | 2006-09-21 | Seiko Epson Corp | 画素構造、アクティブマトリクス基板、アクティブマトリクス基板の製造方法、電気光学装置、並びに電子機器 |
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JP7392129B2 (ja) | 2019-10-07 | 2023-12-05 | エイエムエス-オスラム インターナショナル ゲーエムベーハー | 表示デバイスおよび表示ユニット |
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KR100738168B1 (ko) | 2007-07-10 |
US20110014841A1 (en) | 2011-01-20 |
US7995180B2 (en) | 2011-08-09 |
TWI299212B (ja) | 2008-07-21 |
KR20060101227A (ko) | 2006-09-22 |
US7821604B2 (en) | 2010-10-26 |
TW200644256A (en) | 2006-12-16 |
US20060208624A1 (en) | 2006-09-21 |
JP4516518B2 (ja) | 2010-08-04 |
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