TW200635046A - Liquid crystal display device using thin film transistor and method for manufacturing the same - Google Patents

Liquid crystal display device using thin film transistor and method for manufacturing the same

Info

Publication number
TW200635046A
TW200635046A TW094140878A TW94140878A TW200635046A TW 200635046 A TW200635046 A TW 200635046A TW 094140878 A TW094140878 A TW 094140878A TW 94140878 A TW94140878 A TW 94140878A TW 200635046 A TW200635046 A TW 200635046A
Authority
TW
Taiwan
Prior art keywords
liquid crystal
crystal display
manufacturing
display device
thin film
Prior art date
Application number
TW094140878A
Other languages
Chinese (zh)
Other versions
TWI289361B (en
Inventor
Yoshikazu Yoshimoto
Original Assignee
Future Vision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Future Vision Inc filed Critical Future Vision Inc
Publication of TW200635046A publication Critical patent/TW200635046A/en
Application granted granted Critical
Publication of TWI289361B publication Critical patent/TWI289361B/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/42—Arrangements for providing conduction through an insulating substrate

Abstract

In performing half-tone exposure in TFT manufacturing steps of the LCD apparatus, not only the corresponding miniaturization of half-tone photo mask is difficult to be prepared, but also the photoresist of half-tone exposure portion will become not uniform. In the formation of a so-called island in a TFT manufacturing process of a liquid crystal display apparatus, both of a resist pattern 62 based on exposure and a resist pattern 71 based on ink jet application are used for half-tone exposure.
TW094140878A 2005-03-18 2005-11-21 Liquid crystal display device using thin film transistor and method for manufacturing the same TWI289361B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005079455A JP4542452B2 (en) 2005-03-18 2005-03-18 Thin film transistor manufacturing method

Publications (2)

Publication Number Publication Date
TW200635046A true TW200635046A (en) 2006-10-01
TWI289361B TWI289361B (en) 2007-11-01

Family

ID=37100411

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094140878A TWI289361B (en) 2005-03-18 2005-11-21 Liquid crystal display device using thin film transistor and method for manufacturing the same

Country Status (3)

Country Link
JP (1) JP4542452B2 (en)
KR (1) KR100799852B1 (en)
TW (1) TWI289361B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007299779A (en) * 2006-04-27 2007-11-15 Tokyo Electron Ltd Forming method of mask pattern and manufacturing method of tft
KR101348025B1 (en) 2007-04-04 2014-01-06 삼성전자주식회사 Method for manufacturing thin film transistor
JP5331321B2 (en) * 2007-08-31 2013-10-30 ゴールドチャームリミテッド Manufacturing method of display device
KR101501699B1 (en) 2007-09-19 2015-03-16 삼성디스플레이 주식회사 Organic thin film transistor substrate and method of manufacturing the same
JP2021027199A (en) * 2019-08-06 2021-02-22 株式会社ジャパンディスプレイ Display and method for manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100532085B1 (en) * 2002-05-23 2005-11-30 엘지.필립스 엘시디 주식회사 Printing device of photo resist and fabricating method of tft-lcd therewith
JP4615197B2 (en) * 2002-08-30 2011-01-19 シャープ株式会社 Manufacturing method of TFT array substrate and manufacturing method of liquid crystal display device
JP4423864B2 (en) * 2003-02-21 2010-03-03 コニカミノルタホールディングス株式会社 Thin film transistor element and manufacturing method thereof
KR100652214B1 (en) * 2003-04-03 2006-11-30 엘지.필립스 엘시디 주식회사 Fabrication method of liquid crystal display device

Also Published As

Publication number Publication date
JP2006261538A (en) 2006-09-28
KR100799852B1 (en) 2008-01-31
KR20060101192A (en) 2006-09-22
TWI289361B (en) 2007-11-01
JP4542452B2 (en) 2010-09-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees