JP4535732B2 - 光源装置及びそれを用いた露光装置 - Google Patents

光源装置及びそれを用いた露光装置 Download PDF

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Publication number
JP4535732B2
JP4535732B2 JP2004002142A JP2004002142A JP4535732B2 JP 4535732 B2 JP4535732 B2 JP 4535732B2 JP 2004002142 A JP2004002142 A JP 2004002142A JP 2004002142 A JP2004002142 A JP 2004002142A JP 4535732 B2 JP4535732 B2 JP 4535732B2
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JP
Japan
Prior art keywords
light source
source device
optical system
magnetic field
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004002142A
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English (en)
Japanese (ja)
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JP2005197456A (ja
JP2005197456A5 (enExample
Inventor
秀往 星野
浩 小森
彰 遠藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Gigaphoton Inc
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Komatsu Ltd
Gigaphoton Inc
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Publication date
Application filed by Komatsu Ltd, Gigaphoton Inc filed Critical Komatsu Ltd
Priority to JP2004002142A priority Critical patent/JP4535732B2/ja
Priority to US11/014,961 priority patent/US6987279B2/en
Publication of JP2005197456A publication Critical patent/JP2005197456A/ja
Publication of JP2005197456A5 publication Critical patent/JP2005197456A5/ja
Application granted granted Critical
Publication of JP4535732B2 publication Critical patent/JP4535732B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Atmospheric Sciences (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Plasma Technology (AREA)
  • X-Ray Techniques (AREA)
JP2004002142A 2004-01-07 2004-01-07 光源装置及びそれを用いた露光装置 Expired - Fee Related JP4535732B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004002142A JP4535732B2 (ja) 2004-01-07 2004-01-07 光源装置及びそれを用いた露光装置
US11/014,961 US6987279B2 (en) 2004-01-07 2004-12-20 Light source device and exposure equipment using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004002142A JP4535732B2 (ja) 2004-01-07 2004-01-07 光源装置及びそれを用いた露光装置

Publications (3)

Publication Number Publication Date
JP2005197456A JP2005197456A (ja) 2005-07-21
JP2005197456A5 JP2005197456A5 (enExample) 2007-02-15
JP4535732B2 true JP4535732B2 (ja) 2010-09-01

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JP2004002142A Expired - Fee Related JP4535732B2 (ja) 2004-01-07 2004-01-07 光源装置及びそれを用いた露光装置

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US (1) US6987279B2 (enExample)
JP (1) JP4535732B2 (enExample)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7439530B2 (en) * 2005-06-29 2008-10-21 Cymer, Inc. LPP EUV light source drive laser system
US7671349B2 (en) * 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
JP2004327213A (ja) * 2003-04-24 2004-11-18 Komatsu Ltd Ｅｕｖ光発生装置におけるデブリ回収装置
JP4535732B2 (ja) * 2004-01-07 2010-09-01 株式会社小松製作所 光源装置及びそれを用いた露光装置
JP2005235959A (ja) * 2004-02-18 2005-09-02 Canon Inc 光発生装置及び露光装置
US7196342B2 (en) * 2004-03-10 2007-03-27 Cymer, Inc. Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
JP5100990B2 (ja) * 2004-10-07 2012-12-19 ギガフォトン株式会社 極端紫外光源装置用ドライバーレーザ及びｌｐｐ型極端紫外光源装置
US7193229B2 (en) * 2004-12-28 2007-03-20 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for mitigating debris particles
WO2007032061A1 (ja) 2005-09-13 2007-03-22 Advantest Corporation 製造システム、製造方法、管理装置、管理方法、およびプログラム
DE102005044141B4 (de) * 2005-09-15 2008-08-14 Qimonda Ag Belichtungsgerät und Verfahren zum Betrieb eines Belichtungsgeräts
JP5156193B2 (ja) * 2006-02-01 2013-03-06 ギガフォトン株式会社 極端紫外光源装置
US7989786B2 (en) * 2006-03-31 2011-08-02 Energetiq Technology, Inc. Laser-driven light source
JP4954584B2 (ja) 2006-03-31 2012-06-20 株式会社小松製作所 極端紫外光源装置
US7435982B2 (en) * 2006-03-31 2008-10-14 Energetiq Technology, Inc. Laser-driven light source
JP4850558B2 (ja) 2006-03-31 2012-01-11 キヤノン株式会社 光源装置、及びそれを用いた露光装置、デバイス製造方法
JP4937643B2 (ja) * 2006-05-29 2012-05-23 株式会社小松製作所 極端紫外光源装置
JP5156202B2 (ja) * 2006-07-10 2013-03-06 ギガフォトン株式会社 極端紫外光源装置
JP5162113B2 (ja) * 2006-08-07 2013-03-13 ギガフォトン株式会社 極端紫外光源装置
JP5075389B2 (ja) * 2006-10-16 2012-11-21 ギガフォトン株式会社 極端紫外光源装置
US7696492B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
JP5358060B2 (ja) * 2007-02-20 2013-12-04 ギガフォトン株式会社 極端紫外光源装置
EP1976344B1 (en) * 2007-03-28 2011-04-20 Tokyo Institute Of Technology Extreme ultraviolet light source device and extreme ultraviolet radiation generating method
JP5108367B2 (ja) * 2007-04-27 2012-12-26 ギガフォトン株式会社 極端紫外光源装置
JP5277496B2 (ja) * 2007-04-27 2013-08-28 ギガフォトン株式会社 極端紫外光源装置および極端紫外光源装置の光学素子汚染防止装置
US7655925B2 (en) * 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
US7812329B2 (en) * 2007-12-14 2010-10-12 Cymer, Inc. System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
JP5335269B2 (ja) 2008-04-07 2013-11-06 ギガフォトン株式会社 極端紫外光源装置
JP5312837B2 (ja) 2008-04-14 2013-10-09 ギガフォトン株式会社 極端紫外光源装置
JP5246916B2 (ja) 2008-04-16 2013-07-24 ギガフォトン株式会社 Ｅｕｖ光発生装置におけるイオン回収装置および方法
JP5454881B2 (ja) * 2008-08-29 2014-03-26 ギガフォトン株式会社 極端紫外光源装置及び極端紫外光の発生方法
NL1036803A (nl) * 2008-09-09 2010-03-15 Asml Netherlands Bv Radiation system and lithographic apparatus.
JP5368221B2 (ja) * 2008-09-16 2013-12-18 ギガフォトン株式会社 極端紫外光源装置
US8399867B2 (en) 2008-09-29 2013-03-19 Gigaphoton Inc. Extreme ultraviolet light source apparatus
JP5426317B2 (ja) 2008-10-23 2014-02-26 ギガフォトン株式会社 極端紫外光光源装置
JP2010123929A (ja) 2008-10-24 2010-06-03 Gigaphoton Inc 極端紫外光光源装置
JP5448775B2 (ja) 2008-12-16 2014-03-19 ギガフォトン株式会社 極端紫外光源装置
JP5580032B2 (ja) 2008-12-26 2014-08-27 ギガフォトン株式会社 極端紫外光光源装置
TWI457715B (zh) * 2008-12-27 2014-10-21 Ushio Electric Inc Light source device
US20100176312A1 (en) * 2009-01-13 2010-07-15 Hiroshi Komori Extreme ultra violet light source apparatus
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
JP5252586B2 (ja) * 2009-04-15 2013-07-31 ウシオ電機株式会社 レーザー駆動光源
WO2010137625A1 (ja) 2009-05-27 2010-12-02 ギガフォトン株式会社 ターゲット出力装置及び極端紫外光源装置
JP2011023712A (ja) 2009-06-19 2011-02-03 Gigaphoton Inc 極端紫外光源装置
WO2011013779A1 (ja) * 2009-07-29 2011-02-03 株式会社小松製作所 極端紫外光源装置、極端紫外光源装置の制御方法、およびそのプログラムを記録した記録媒体
JP2011033468A (ja) * 2009-07-31 2011-02-17 Japan Atomic Energy Agency レーザー駆動陽子線を用いる薄層放射化装置
US8173985B2 (en) * 2009-12-15 2012-05-08 Cymer, Inc. Beam transport system for extreme ultraviolet light source
EP2534672B1 (en) 2010-02-09 2016-06-01 Energetiq Technology Inc. Laser-driven light source
US9265136B2 (en) 2010-02-19 2016-02-16 Gigaphoton Inc. System and method for generating extreme ultraviolet light
US9113540B2 (en) 2010-02-19 2015-08-18 Gigaphoton Inc. System and method for generating extreme ultraviolet light
JP5687488B2 (ja) 2010-02-22 2015-03-18 ギガフォトン株式会社 極端紫外光生成装置
JP2011192965A (ja) 2010-02-22 2011-09-29 Komatsu Ltd チャンバ装置、および極端紫外光生成装置
JP5758153B2 (ja) 2010-03-12 2015-08-05 エーエスエムエル ネザーランズ ビー．ブイ． 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法
US8258485B2 (en) * 2010-08-30 2012-09-04 Media Lario Srl Source-collector module with GIC mirror and xenon liquid EUV LPP target system
JP5726587B2 (ja) * 2010-10-06 2015-06-03 ギガフォトン株式会社 チャンバ装置
US8575576B2 (en) * 2011-02-14 2013-11-05 Kla-Tencor Corporation Optical imaging system with laser droplet plasma illuminator
US9318311B2 (en) * 2011-10-11 2016-04-19 Kla-Tencor Corporation Plasma cell for laser-sustained plasma light source
DE102011086565A1 (de) * 2011-11-17 2012-11-15 Carl Zeiss Smt Gmbh Kollektor
SG11201407782QA (en) * 2012-06-12 2015-01-29 Asml Netherlands Bv Photon source, metrology apparatus, lithographic system and device manufacturing method
WO2014019803A1 (en) * 2012-08-01 2014-02-06 Asml Netherlands B.V. Method and apparatus for generating radiation
JP5567640B2 (ja) * 2012-11-05 2014-08-06 ギガフォトン株式会社 極端紫外光源装置
US9390902B2 (en) * 2013-03-29 2016-07-12 Kla-Tencor Corporation Method and system for controlling convective flow in a light-sustained plasma
US9185788B2 (en) * 2013-05-29 2015-11-10 Kla-Tencor Corporation Method and system for controlling convection within a plasma cell
IL234729B (en) 2013-09-20 2021-02-28 Asml Netherlands Bv A light source operated by a laser and a method using a mode mixer
IL234727B (en) 2013-09-20 2020-09-30 Asml Netherlands Bv A light source operated by a laser in an optical system corrected for deviations and the method of manufacturing the system as mentioned
WO2015086232A1 (en) * 2013-12-09 2015-06-18 Asml Netherlands B.V. Radiation source device, lithographic apparatus and device manufacturing method
EP3457430B1 (en) 2014-05-15 2023-10-25 Excelitas Technologies Corp. Laser driven sealed beam lamp with dual focus regions
US10186416B2 (en) 2014-05-15 2019-01-22 Excelitas Technologies Corp. Apparatus and a method for operating a variable pressure sealed beam lamp
US9741553B2 (en) 2014-05-15 2017-08-22 Excelitas Technologies Corp. Elliptical and dual parabolic laser driven sealed beam lamps
US9576785B2 (en) 2015-05-14 2017-02-21 Excelitas Technologies Corp. Electrodeless single CW laser driven xenon lamp
US10057973B2 (en) 2015-05-14 2018-08-21 Excelitas Technologies Corp. Electrodeless single low power CW laser driven plasma lamp
US10008378B2 (en) 2015-05-14 2018-06-26 Excelitas Technologies Corp. Laser driven sealed beam lamp with improved stability
US9865447B2 (en) 2016-03-28 2018-01-09 Kla-Tencor Corporation High brightness laser-sustained plasma broadband source
US10395881B2 (en) 2017-10-11 2019-08-27 HIL Applied Medical, Ltd. Systems and methods for providing an ion beam
US10847340B2 (en) 2017-10-11 2020-11-24 HIL Applied Medical, Ltd. Systems and methods for directing an ion beam using electromagnets
US10109473B1 (en) 2018-01-26 2018-10-23 Excelitas Technologies Corp. Mechanically sealed tube for laser sustained plasma lamp and production method for same
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CN110534388B (zh) * 2019-08-30 2021-11-09 中国科学院国家空间科学中心 一种微型微焦斑x射线管的阴极光学结构
JP2021043402A (ja) 2019-09-13 2021-03-18 ギガフォトン株式会社 極端紫外光生成装置及び電子デバイスの製造方法
US11587781B2 (en) 2021-05-24 2023-02-21 Hamamatsu Photonics K.K. Laser-driven light source with electrodeless ignition
CN113665848B (zh) * 2021-08-27 2023-03-14 中国人民解放军国防科技大学 一种磁场力/力矩作用投送系统及其地面测试装置
US12165856B2 (en) 2022-02-21 2024-12-10 Hamamatsu Photonics K.K. Inductively coupled plasma light source
US12144072B2 (en) 2022-03-29 2024-11-12 Hamamatsu Photonics K.K. All-optical laser-driven light source with electrodeless ignition
US12156322B2 (en) 2022-12-08 2024-11-26 Hamamatsu Photonics K.K. Inductively coupled plasma light source with switched power supply
DE102023108743A1 (de) 2023-04-05 2024-10-10 Carl Zeiss Smt Gmbh EUV-Strahlungsquellensystem mit Kontaminationsunterdrückung

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2587924B2 (ja) * 1986-10-11 1997-03-05 日本電信電話株式会社 薄膜形成装置
JP2618001B2 (ja) * 1988-07-13 1997-06-11 三菱電機株式会社 プラズマ反応装置
JPH0456774A (ja) * 1990-06-25 1992-02-24 Mitsubishi Electric Corp プラズマ反応装置
JP2552433B2 (ja) * 1994-06-30 1996-11-13 関西電力株式会社 レーザープラズマｘ線源のデブリス除去方法及び装置
JP3433151B2 (ja) 2000-01-31 2003-08-04 株式会社日立製作所 レーザプラズマｘ線源
US7180081B2 (en) * 2000-06-09 2007-02-20 Cymer, Inc. Discharge produced plasma EUV light source
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
JP4963149B2 (ja) * 2001-09-19 2012-06-27 ギガフォトン株式会社 光源装置及びそれを用いた露光装置
US7002168B2 (en) * 2002-10-15 2006-02-21 Cymer, Inc. Dense plasma focus radiation source
TWI255394B (en) * 2002-12-23 2006-05-21 Asml Netherlands Bv Lithographic apparatus with debris suppression means and device manufacturing method
US7230258B2 (en) * 2003-07-24 2007-06-12 Intel Corporation Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
US7251012B2 (en) * 2003-12-31 2007-07-31 Asml Netherlands B.V. Lithographic apparatus having a debris-mitigation system, a source for producing EUV radiation having a debris mitigation system and a method for mitigating debris
JP4535732B2 (ja) * 2004-01-07 2010-09-01 株式会社小松製作所 光源装置及びそれを用いた露光装置
US7423275B2 (en) * 2004-01-15 2008-09-09 Intel Corporation Erosion mitigation for collector optics using electric and magnetic fields

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Publication number Publication date
US6987279B2 (en) 2006-01-17
US20050167618A1 (en) 2005-08-04
JP2005197456A (ja) 2005-07-21

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