JP5335269B2 - 極端紫外光源装置 - Google Patents
極端紫外光源装置 Download PDFInfo
- Publication number
- JP5335269B2 JP5335269B2 JP2008099406A JP2008099406A JP5335269B2 JP 5335269 B2 JP5335269 B2 JP 5335269B2 JP 2008099406 A JP2008099406 A JP 2008099406A JP 2008099406 A JP2008099406 A JP 2008099406A JP 5335269 B2 JP5335269 B2 JP 5335269B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- target
- light source
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005284 excitation Effects 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims description 69
- 230000007935 neutral effect Effects 0.000 claims description 19
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 18
- 239000013077 target material Substances 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 239000000460 chlorine Substances 0.000 claims description 11
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 9
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 9
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 1
- 229910000043 hydrogen iodide Inorganic materials 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 239000011630 iodine Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 29
- 238000002834 transmittance Methods 0.000 abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 38
- 150000002500 ions Chemical class 0.000 description 36
- 238000010517 secondary reaction Methods 0.000 description 31
- 239000002245 particle Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 8
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 7
- 229910000083 tin tetrahydride Inorganic materials 0.000 description 7
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- -1 tin halide Chemical class 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 229910000039 hydrogen halide Inorganic materials 0.000 description 3
- 239000012433 hydrogen halide Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- X-Ray Techniques (AREA)
Description
図1は、本発明の第1の実施形態に係る極端紫外(EUV)光源装置を示す模式図である。このEUV光源装置は、LPP(レーザ励起プラズマ)方式を採用しており、露光装置の光源として用いられる。
図2は、本発明の第2の実施形態に係るEUV光源装置の内部構造を示す図である。図2に示すように、EUV光源装置31は、第1の実施形態に係るEUV光源装置と同様の構成を備えているが、高周波電界の替わりに、磁場とマイクロ波とを用いて2次反応プラズマ32を励起する。磁場は、例えば、磁場コイル17によって生成され、マイクロ波は、マイクロ波を発生してガスを励起するマイクロ波発生装置(励起装置)35によって生成される。
図3は、本発明の第3の実施形態に係るEUV光源装置の内部構造を示す図である。図3に示すように、EUV光源装置41は、例えば、特許文献2に記載されるように、水素化錫(SnH4)又はハロゲン化錫(SnCl4、SnBr4)を液体化又は氷結固体化して供給することが可能なターゲット供給装置44を備えている。また、図3に示すEUV光源装置は、補充ガス供給装置46を備えていても良い。
図4は、本発明の第4の実施形態に係るEUV光源装置の内部構造を示す図である。図4に示すように、EUV光源装置51は、デブリに含まれている帯電粒子を閉じ込める磁場の磁力線に沿って、帯電粒子流52をカーテン状に流す帯電粒子流発生装置53を備えている。
Claims (4)
- ターゲットにレーザ光を照射することによりプラズマを生成して極端紫外光を発生する極端紫外光源装置であって、
極端紫外光の生成が行われるチャンバと、
前記チャンバ内のプラズマ発光点にターゲットを供給するターゲット供給装置と、
前記ターゲット供給装置によって供給されるターゲットにレーザ光を照射して、前記プラズマ発光点において第1のプラズマを生成するドライバレーザと、
前記チャンバ内に設置され、第1のプラズマから放射される極端紫外光を集光する集光ミラーと、
前記プラズマ発光点に向けた開口部を有し、第1のプラズマが生成される領域の周囲にガスを供給するガス供給装置と、
前記プラズマ発光点を囲むように配置されたRF(高周波)アンテナを含み、前記ガス供給装置によって供給されるガス及び電気的に中性のターゲット物質を励起して、第1のプラズマが生成される領域の周囲に、第1のプラズマから放出されるデブリの内で電気的に中性のデブリを帯電させる第2のプラズマを生成する高周波励起装置と、
第2のプラズマによって帯電したデブリの移動方向を制限する磁場を発生する磁場発生装置と、
前記チャンバ内を排気することにより、第1のプラズマから放出され第2のプラズマにおいてガス化されたデブリを前記チャンバ外に排出する排気装置と、
を具備する極端紫外光源装置。 - 前記ガス供給装置が、アルゴンガス(Ar)、窒素ガス(N2)、水素ガス(H2)、フッ素ガス(F2)、塩素ガス(Cl2)、臭素ガス(Br2)、ヨウ素ガス(I2)、フッ化水素ガス(HF)、塩化水素ガス(HCl)、臭化水素ガス(HBr)、ヨウ化水素ガス(HI)、又は、それらの内の少なくとも1つを含む混合ガスを供給する、請求項1記載の極端紫外光源装置。
- 前記排気装置の吸入口付近に配置され、前記磁場発生装置によって発生される磁場によって移動方向が制限されたデブリを前記排気装置に引き寄せる帯電した導電性メッシュをさらに具備する請求項1記載の極端紫外光源装置。
- 前記集光ミラーの表面に、ルテニウム(Ru)、シリコンカーバイト(SiC)、炭素(C)、二酸化シリコン(SiO2)、又は、酸化ルテニウム(RuO2)を含む保護膜がコーティングされている、請求項1〜3のいずれか1項記載の極端紫外光源装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008099406A JP5335269B2 (ja) | 2008-04-07 | 2008-04-07 | 極端紫外光源装置 |
US12/385,245 US8481983B2 (en) | 2008-04-07 | 2009-04-02 | Extreme ultra violet light source apparatus |
US13/742,276 US20130126762A1 (en) | 2008-04-07 | 2013-01-15 | Extreme ultra violet light source apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008099406A JP5335269B2 (ja) | 2008-04-07 | 2008-04-07 | 極端紫外光源装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013016309A Division JP5588032B2 (ja) | 2013-01-31 | 2013-01-31 | 極端紫外光源装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009253032A JP2009253032A (ja) | 2009-10-29 |
JP5335269B2 true JP5335269B2 (ja) | 2013-11-06 |
Family
ID=41132400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008099406A Expired - Fee Related JP5335269B2 (ja) | 2008-04-07 | 2008-04-07 | 極端紫外光源装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8481983B2 (ja) |
JP (1) | JP5335269B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190355484A1 (en) * | 2016-11-23 | 2019-11-21 | Dalian Nationalities University | Method for laser-induced excitation of radio frequency plasma at low air pressure |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9268194B2 (en) * | 2006-10-02 | 2016-02-23 | PM & AM Research | Method and technique to control laser effects through tuning of parameters such as repetition rate |
JP5086664B2 (ja) * | 2007-03-02 | 2012-11-28 | ギガフォトン株式会社 | 極端紫外光源装置 |
US8960596B2 (en) | 2007-08-20 | 2015-02-24 | Kevin Kremeyer | Energy-deposition systems, equipment and method for modifying and controlling shock waves and supersonic flow |
JP5559562B2 (ja) * | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
JP4970525B2 (ja) | 2009-11-04 | 2012-07-11 | 株式会社椿本チエイン | チェーンガイド機構 |
US9265136B2 (en) | 2010-02-19 | 2016-02-16 | Gigaphoton Inc. | System and method for generating extreme ultraviolet light |
US9113540B2 (en) | 2010-02-19 | 2015-08-18 | Gigaphoton Inc. | System and method for generating extreme ultraviolet light |
JP5722061B2 (ja) * | 2010-02-19 | 2015-05-20 | ギガフォトン株式会社 | 極端紫外光源装置及び極端紫外光の発生方法 |
US8686381B2 (en) | 2010-06-28 | 2014-04-01 | Media Lario S.R.L. | Source-collector module with GIC mirror and tin vapor LPP target system |
US9476144B2 (en) * | 2011-03-28 | 2016-10-25 | Applied Materials, Inc. | Method and apparatus for the selective deposition of epitaxial germanium stressor alloys |
DE102011076011A1 (de) * | 2011-05-18 | 2012-11-22 | Carl Zeiss Smt Gmbh | Reflektives optisches Element und optisches System für die EUV-Lithographie |
GB201203430D0 (en) * | 2012-02-28 | 2012-04-11 | Univ Leicester | Chemical reaction |
US9585236B2 (en) | 2013-05-03 | 2017-02-28 | Media Lario Srl | Sn vapor EUV LLP source system for EUV lithography |
WO2015097794A1 (ja) | 2013-12-25 | 2015-07-02 | ギガフォトン株式会社 | 極端紫外光生成装置 |
CN104776980A (zh) * | 2015-03-07 | 2015-07-15 | 复旦大学 | 基于真空室的真空紫外光源测试系统 |
WO2016174752A1 (ja) * | 2015-04-28 | 2016-11-03 | ギガフォトン株式会社 | チャンバ装置、ターゲット生成方法および極端紫外光生成装置 |
US10669653B2 (en) | 2015-06-18 | 2020-06-02 | Kevin Kremeyer | Directed energy deposition to facilitate high speed applications |
JP6751138B2 (ja) * | 2016-04-27 | 2020-09-02 | ギガフォトン株式会社 | 極端紫外光センサユニット及び極端紫外光生成装置 |
WO2019058430A1 (ja) * | 2017-09-19 | 2019-03-28 | ギガフォトン株式会社 | 極端紫外光生成装置及び極端紫外光生成装置の制御方法 |
WO2019186921A1 (ja) * | 2018-03-29 | 2019-10-03 | ギガフォトン株式会社 | 極端紫外光生成装置及び電子デバイスの製造方法 |
KR102555241B1 (ko) * | 2018-08-08 | 2023-07-13 | 삼성전자주식회사 | 극자외선 생성 장치 |
JP7311296B2 (ja) * | 2019-04-01 | 2023-07-19 | ギガフォトン株式会社 | Euvチャンバ装置、極端紫外光生成システム、及び電子デバイスの製造方法 |
KR102551129B1 (ko) * | 2021-03-24 | 2023-07-04 | 한국표준과학연구원 | 헬리콘 플라즈마 빔 극자외선 발생 장치 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4042848A (en) * | 1974-05-17 | 1977-08-16 | Ja Hyun Lee | Hypocycloidal pinch device |
US6815700B2 (en) * | 1997-05-12 | 2004-11-09 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
US7465946B2 (en) * | 2004-03-10 | 2008-12-16 | Cymer, Inc. | Alternative fuels for EUV light source |
US7230258B2 (en) * | 2003-07-24 | 2007-06-12 | Intel Corporation | Plasma-based debris mitigation for extreme ultraviolet (EUV) light source |
JP4535732B2 (ja) | 2004-01-07 | 2010-09-01 | 株式会社小松製作所 | 光源装置及びそれを用いた露光装置 |
JP4578901B2 (ja) * | 2004-09-09 | 2010-11-10 | 株式会社小松製作所 | 極端紫外光源装置 |
JP2006202671A (ja) * | 2005-01-24 | 2006-08-03 | Ushio Inc | 極端紫外光光源装置及び極端紫外光光源装置で発生するデブリの除去方法 |
JP2006210157A (ja) | 2005-01-28 | 2006-08-10 | Ushio Inc | レーザ生成プラズマ方式極端紫外光光源 |
JP2007220949A (ja) * | 2006-02-17 | 2007-08-30 | Ushio Inc | 極端紫外光光源装置および極端紫外光光源装置における集光光学手段の汚染抑制方法 |
JP4937643B2 (ja) * | 2006-05-29 | 2012-05-23 | 株式会社小松製作所 | 極端紫外光源装置 |
JP4888046B2 (ja) * | 2006-10-26 | 2012-02-29 | ウシオ電機株式会社 | 極端紫外光光源装置 |
US7655925B2 (en) * | 2007-08-31 | 2010-02-02 | Cymer, Inc. | Gas management system for a laser-produced-plasma EUV light source |
-
2008
- 2008-04-07 JP JP2008099406A patent/JP5335269B2/ja not_active Expired - Fee Related
-
2009
- 2009-04-02 US US12/385,245 patent/US8481983B2/en active Active
-
2013
- 2013-01-15 US US13/742,276 patent/US20130126762A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190355484A1 (en) * | 2016-11-23 | 2019-11-21 | Dalian Nationalities University | Method for laser-induced excitation of radio frequency plasma at low air pressure |
Also Published As
Publication number | Publication date |
---|---|
US20090250641A1 (en) | 2009-10-08 |
JP2009253032A (ja) | 2009-10-29 |
US20130126762A1 (en) | 2013-05-23 |
US8481983B2 (en) | 2013-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5335269B2 (ja) | 極端紫外光源装置 | |
US9000404B2 (en) | Systems and methods for optics cleaning in an EUV light source | |
US8530870B2 (en) | Extreme ultraviolet light source apparatus | |
EP3714476B1 (en) | High-brightness lpp source and methods for generating radiation and mitigating debris | |
JP5448775B2 (ja) | 極端紫外光源装置 | |
JP5454881B2 (ja) | 極端紫外光源装置及び極端紫外光の発生方法 | |
JP4616828B2 (ja) | Euv光源用コレクタ | |
JP4888046B2 (ja) | 極端紫外光光源装置 | |
US7465946B2 (en) | Alternative fuels for EUV light source | |
US8368039B2 (en) | EUV light source glint reduction system | |
US7652272B2 (en) | Plasma-based debris mitigation for extreme ultraviolet (EUV) light source | |
JP5248315B2 (ja) | イオンがeuv光源の内部部品に到達することを防ぐための、プラズマ生成イオンを偏向するシステム | |
JP5006977B2 (ja) | Euv光源用コレクタ | |
JP5588032B2 (ja) | 極端紫外光源装置 | |
JP5182917B2 (ja) | 極端紫外光源装置および極端紫外光源における付着物除去方法 | |
JP4973425B2 (ja) | 極端紫外光光源装置における集光光学手段のクリーニング方法及び極端紫外光光源装置 | |
JP2009032776A (ja) | 極端紫外光光源装置及び極端紫外光光源装置における高速粒子の捕捉方法 | |
JP2007214253A (ja) | 極端紫外光光源装置および極端紫外光光源装置における集光光学手段の保護方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100728 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110304 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120412 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120417 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120604 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20120713 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130131 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130702 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130731 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5335269 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |