JP4532846B2 - 半導体基板の製造方法 - Google Patents
半導体基板の製造方法 Download PDFInfo
- Publication number
- JP4532846B2 JP4532846B2 JP2003128917A JP2003128917A JP4532846B2 JP 4532846 B2 JP4532846 B2 JP 4532846B2 JP 2003128917 A JP2003128917 A JP 2003128917A JP 2003128917 A JP2003128917 A JP 2003128917A JP 4532846 B2 JP4532846 B2 JP 4532846B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- manufacturing
- layer
- semiconductor substrate
- gallium arsenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 97
- 239000004065 semiconductor Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 238000005468 ion implantation Methods 0.000 claims description 20
- 229910052732 germanium Inorganic materials 0.000 claims description 17
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 17
- 239000012530 fluid Substances 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 3
- -1 hydrogen gas ions Chemical class 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910021426 porous silicon Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003128917A JP4532846B2 (ja) | 2003-05-07 | 2003-05-07 | 半導体基板の製造方法 |
TW093111750A TWI259514B (en) | 2003-05-07 | 2004-04-27 | Semiconductor substrate and manufacturing method therefor |
PCT/JP2004/006178 WO2004100233A1 (en) | 2003-05-07 | 2004-04-28 | Semiconductor substrate and manufacturing method therefor |
CNA2007101812355A CN101145509A (zh) | 2003-05-07 | 2004-04-28 | 半导体衬底及其制造方法 |
KR1020057020457A KR100725141B1 (ko) | 2003-05-07 | 2004-04-28 | 반도체 기판 및 그 제조방법 |
CNB2004800006869A CN100358104C (zh) | 2003-05-07 | 2004-04-28 | 半导体衬底及其制造方法 |
EP04730068A EP1620880A4 (en) | 2003-05-07 | 2004-04-28 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME |
US11/039,285 US20050124137A1 (en) | 2003-05-07 | 2005-01-19 | Semiconductor substrate and manufacturing method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003128917A JP4532846B2 (ja) | 2003-05-07 | 2003-05-07 | 半導体基板の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004335693A JP2004335693A (ja) | 2004-11-25 |
JP2004335693A5 JP2004335693A5 (zh) | 2006-06-08 |
JP4532846B2 true JP4532846B2 (ja) | 2010-08-25 |
Family
ID=33432059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003128917A Expired - Fee Related JP4532846B2 (ja) | 2003-05-07 | 2003-05-07 | 半導体基板の製造方法 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1620880A4 (zh) |
JP (1) | JP4532846B2 (zh) |
KR (1) | KR100725141B1 (zh) |
CN (2) | CN101145509A (zh) |
TW (1) | TWI259514B (zh) |
WO (1) | WO2004100233A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5128781B2 (ja) * | 2006-03-13 | 2013-01-23 | 信越化学工業株式会社 | 光電変換素子用基板の製造方法 |
CN108231695A (zh) * | 2016-12-15 | 2018-06-29 | 上海新微技术研发中心有限公司 | 复合衬底及其制造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794409A (ja) * | 1993-09-20 | 1995-04-07 | Fujitsu Ltd | Iii−v族化合物半導体薄膜の形成方法 |
JP2000036583A (ja) * | 1998-05-15 | 2000-02-02 | Canon Inc | 半導体基板、半導体薄膜の作製方法および多層構造体 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3879173B2 (ja) * | 1996-03-25 | 2007-02-07 | 住友電気工業株式会社 | 化合物半導体気相成長方法 |
FR2784795B1 (fr) * | 1998-10-16 | 2000-12-01 | Commissariat Energie Atomique | Structure comportant une couche mince de materiau composee de zones conductrices et de zones isolantes et procede de fabrication d'une telle structure |
US6573126B2 (en) * | 2000-08-16 | 2003-06-03 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
-
2003
- 2003-05-07 JP JP2003128917A patent/JP4532846B2/ja not_active Expired - Fee Related
-
2004
- 2004-04-27 TW TW093111750A patent/TWI259514B/zh not_active IP Right Cessation
- 2004-04-28 KR KR1020057020457A patent/KR100725141B1/ko not_active IP Right Cessation
- 2004-04-28 EP EP04730068A patent/EP1620880A4/en not_active Withdrawn
- 2004-04-28 WO PCT/JP2004/006178 patent/WO2004100233A1/en active Application Filing
- 2004-04-28 CN CNA2007101812355A patent/CN101145509A/zh active Pending
- 2004-04-28 CN CNB2004800006869A patent/CN100358104C/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794409A (ja) * | 1993-09-20 | 1995-04-07 | Fujitsu Ltd | Iii−v族化合物半導体薄膜の形成方法 |
JP2000036583A (ja) * | 1998-05-15 | 2000-02-02 | Canon Inc | 半導体基板、半導体薄膜の作製方法および多層構造体 |
Also Published As
Publication number | Publication date |
---|---|
KR20060005406A (ko) | 2006-01-17 |
CN101145509A (zh) | 2008-03-19 |
TW200425261A (en) | 2004-11-16 |
JP2004335693A (ja) | 2004-11-25 |
KR100725141B1 (ko) | 2007-06-07 |
TWI259514B (en) | 2006-08-01 |
CN100358104C (zh) | 2007-12-26 |
EP1620880A1 (en) | 2006-02-01 |
WO2004100233A1 (en) | 2004-11-18 |
EP1620880A4 (en) | 2008-08-06 |
CN1698180A (zh) | 2005-11-16 |
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