JP2004335693A5 - - Google Patents
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- Publication number
- JP2004335693A5 JP2004335693A5 JP2003128917A JP2003128917A JP2004335693A5 JP 2004335693 A5 JP2004335693 A5 JP 2004335693A5 JP 2003128917 A JP2003128917 A JP 2003128917A JP 2003128917 A JP2003128917 A JP 2003128917A JP 2004335693 A5 JP2004335693 A5 JP 2004335693A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003128917A JP4532846B2 (ja) | 2003-05-07 | 2003-05-07 | 半導体基板の製造方法 |
| TW093111750A TWI259514B (en) | 2003-05-07 | 2004-04-27 | Semiconductor substrate and manufacturing method therefor |
| CNB2004800006869A CN100358104C (zh) | 2003-05-07 | 2004-04-28 | 半导体衬底及其制造方法 |
| EP04730068A EP1620880A4 (en) | 2003-05-07 | 2004-04-28 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME |
| PCT/JP2004/006178 WO2004100233A1 (en) | 2003-05-07 | 2004-04-28 | Semiconductor substrate and manufacturing method therefor |
| CNA2007101812355A CN101145509A (zh) | 2003-05-07 | 2004-04-28 | 半导体衬底及其制造方法 |
| KR1020057020457A KR100725141B1 (ko) | 2003-05-07 | 2004-04-28 | 반도체 기판 및 그 제조방법 |
| US11/039,285 US20050124137A1 (en) | 2003-05-07 | 2005-01-19 | Semiconductor substrate and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003128917A JP4532846B2 (ja) | 2003-05-07 | 2003-05-07 | 半導体基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004335693A JP2004335693A (ja) | 2004-11-25 |
| JP2004335693A5 true JP2004335693A5 (zh) | 2006-06-08 |
| JP4532846B2 JP4532846B2 (ja) | 2010-08-25 |
Family
ID=33432059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003128917A Expired - Fee Related JP4532846B2 (ja) | 2003-05-07 | 2003-05-07 | 半導体基板の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1620880A4 (zh) |
| JP (1) | JP4532846B2 (zh) |
| KR (1) | KR100725141B1 (zh) |
| CN (2) | CN101145509A (zh) |
| TW (1) | TWI259514B (zh) |
| WO (1) | WO2004100233A1 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5128781B2 (ja) * | 2006-03-13 | 2013-01-23 | 信越化学工業株式会社 | 光電変換素子用基板の製造方法 |
| CN108231695A (zh) * | 2016-12-15 | 2018-06-29 | 上海新微技术研发中心有限公司 | 复合衬底及其制造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0794409A (ja) * | 1993-09-20 | 1995-04-07 | Fujitsu Ltd | Ｉｉｉ−ｖ族化合物半導体薄膜の形成方法 |
| JP3879173B2 (ja) * | 1996-03-25 | 2007-02-07 | 住友電気工業株式会社 | 化合物半導体気相成長方法 |
| JP3697106B2 (ja) * | 1998-05-15 | 2005-09-21 | キヤノン株式会社 | 半導体基板の作製方法及び半導体薄膜の作製方法 |
| FR2784795B1 (fr) * | 1998-10-16 | 2000-12-01 | Commissariat Energie Atomique | Structure comportant une couche mince de materiau composee de zones conductrices et de zones isolantes et procede de fabrication d'une telle structure |
| US6573126B2 (en) * | 2000-08-16 | 2003-06-03 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
-
2003
- 2003-05-07 JP JP2003128917A patent/JP4532846B2/ja not_active Expired - Fee Related
-
2004
- 2004-04-27 TW TW093111750A patent/TWI259514B/zh not_active IP Right Cessation
- 2004-04-28 CN CNA2007101812355A patent/CN101145509A/zh active Pending
- 2004-04-28 KR KR1020057020457A patent/KR100725141B1/ko not_active IP Right Cessation
- 2004-04-28 WO PCT/JP2004/006178 patent/WO2004100233A1/en active Application Filing
- 2004-04-28 EP EP04730068A patent/EP1620880A4/en not_active Withdrawn
- 2004-04-28 CN CNB2004800006869A patent/CN100358104C/zh not_active Expired - Fee Related